Abstract: Conductive materials that have low coefficients of thermal expansion (CTEs) and that are used for power and ground planes are disclosed. Fibrous materials (such as carbon, graphite, glass, quartz, polyethylene, and liquid crystal polymer fibers) with low CTEs are metallized to provide a resultant conductive material with a low CTE. Such fibers may be metallized in their individual state and then formed into a fabric, or these materials may be formed into a fabric and then metallized or a combination of both metallizations may be used. In addition, a graphite or carbon sheet may be metallized on one or both sides to provide a material that has a low CTE and high conductivity. These metallized, low CTE power and ground planes may be laminated with other planes/cores into a composite, or laminated into a core which is then laminated with other planes/cores into a composite. The resultant composite may be used for printed circuit boards (PCBs) or PCBs used as laminate chip carriers.

Abstract: Conductive materials that have low coefficients of thermal expansion (CTEs) and that are used for power and ground planes are disclosed. Fibrous materials (such as carbon, graphite, glass, quartz, polyethylene, and liquid crystal polymer fibers) with low CTEs are metallized to provide a resultant conductive material with a low CTE. Such fibers may be metallized in their individual state and then formed into a fabric, or these materials may be formed into a fabric and then metallized or a combination of both metallizations may be used. In addition, a graphite or carbon sheet may be metallized on one or both sides to provide a material that has a low CTE and high conductivity. These metallized, low CTE power and ground planes may be laminated with other planes/cores into a composite, or laminated into a core which is then laminated with other planes/cores into a composite. The resultant composite may be used for printed circuit boards (PCBs) or PCBs used as laminate chip carriers.

Abstract: A semiconductor device having a thermoset-containing, dielectric material and methods for fabricating the same is provided. The device may take the form of a printed circuit board, an integrated circuit chip carrier, or the like. The dielectric material is a non-fibrillated, fluoropolymer matrix that has inorganic particles distributed therein and is impregnated with a thermoset material.

Abstract: A semiconductor device having a thermoset-containing, dielectric material and methods for fabricating the same is provided. The device may take the form of a printed circuit board, an integrated circuit chip carrier, or the like. The dielectric material is a non-fibrillated, fluoropolymer matrix that has inorganic particles distributed therein and is impregnated with a thermoset material.

Abstract: A semiconductor device having a thermoset-containing, dielectric material and methods for fabricating the same is provided. The device may take the form of a printed circuit board, an integrated circuit chip carrier, or the like. The dielectric material is a non-fibrillated, fluoropolymer matrix that has inorganic particles distributed therein and is impregnated with a thermoset material.

Abstract: A fabric material and method of its manufacture suitable for use in electronic packages including chip carriers. High insulation resistance is exhibited when subjected to high temperatures and humidity stress conditions.

Abstract: Composition and solder interconnection structure for its use, wherein the gap created by solder connections between a carrier substrate and a semiconductor chip device mounted thereon is filled with the solvent free formulation obtained by curing a preparation containing a cycloaliphatic polyepoxide and/or curable cyanate ester or prepolymer thereof, polyol, and filler which is substantially free of alpha particle emissions.