Abstract: An anisotropic conductive film (ACF) is formed with an ordered array of discrete regions that include a conductive carbon-based material. The discrete regions, which may be formed at small pitch, are embedded in at least one adhesive dielectric material. The ACF may be used to mechanically and electrically interconnect conductive elements of initially-separate semiconductor dice in semiconductor device assemblies. Methods of forming the ACF include forming a precursor structure with the conductive carbon-based material and then joining the precursor structure to a separately-formed structure that includes adhesive dielectric material to be included in the ACF. Sacrificial materials of the precursor structure may be removed and additional adhesive dielectric material formed to embed the discrete regions with the conductive carbon-based material in the adhesive dielectric material of the ACF.

Abstract: Semiconductor devices including a dual-sided redistribution structure and having low-warpage across all temperatures and associated systems and methods are disclosed herein. In one embodiment, a semiconductor device includes a first semiconductor die electrically coupled to a first side of a redistribution structure and a second semiconductor die electrically coupled to a second side of the redistribution structure opposite the first side. The semiconductor device also includes a first molded material on the first side, a second molded material on the second side, and conductive columns electrically coupled to the first side and extending through the first molded material. The first and second molded materials can have the same volume and/or coefficients of thermal expansion to inhibit warpage of the semiconductor device.

Abstract: A semiconductor device includes a substrate; a die attached over the substrate; and a metal enclosure continuously encircling a space and extending vertically between the substrate and the die.

Abstract: A solder removal apparatus is provided. The solder removal apparatus comprises a plurality of solder-interfacing protrusions extending from a body by a length. Each of the plurality of solder-interfacing protrusions is configured to remove a corresponding one of a plurality of solder features from a semiconductor device, where each of the plurality of solder features has a height and an amount of solder material.

Abstract: A thermocompression bonding (TCB) apparatus can include a wall having a height measured in a first direction and configured to be positioned between a first pressing surface and a second pressing surface of a semiconductor bonding apparatus. The apparatus can include a cavity at least partially surrounded by the wall, the cavity sized to receive a semiconductor substrate and a stack of semiconductor dies positioned between the semiconductor substrate and the first pressing surface, the stack of semiconductor dies and semiconductor substrate having a combined unpressed stack height as measured in the first direction. In some embodiments, the unpressed stack height is greater than the height of the wall, and the wall is configured to be contacted by the first pressing surface to limit movement of the first pressing surface toward the second pressing surface during a semiconductor bonding process.

Abstract: A semiconductor device assembly including a substrate, a semiconductor device, a stiffener member, and mold compound. The stiffener member is tuned, or configured, to reduce and/or control the shape of warpage of the semiconductor device assembly at an elevated temperature. The stiffener member may be placed on the substrate, on the semiconductor device, and/or on the mold compound. A plurality of stiffener members may be used. The stiffener members may be positioned in a predetermined pattern on a component of the semiconductor device assembly. A stiffener member may be used so that the warpage of a first semiconductor device substantially corresponds to the warpage of a second semiconductor device at an elevated temperature. The stiffener member may be tuned by providing the member with a desired coefficient of thermal expansion (CTE). The desired CTE may be based on the individual CTEs of the components of a semiconductor device assembly.

Abstract: A semiconductor device includes functional circuits electrically coupled to each other and each coupled to a different thermal circuit. The different thermal circuits are configured to maintain different operating temperatures targeted for each corresponding functional circuit. One of the thermal circuits may use a cryogenic liquid to cool the corresponding functional circuit.

Abstract: A thermocompression bonding (TCB) apparatus can include a wall having a height measured in a first direction and configured to be positioned between a first pressing surface and a second pressing surface of a semiconductor bonding apparatus. The apparatus can include a cavity at least partially surrounded by the wall, the cavity sized to receive a semiconductor substrate and a stack of semiconductor dies positioned between the semiconductor substrate and the first pressing surface, the stack of semiconductor dies and semiconductor substrate having a combined unpressed stack height as measured in the first direction. In some embodiments, the unpressed stack height is greater than the height of the wall, and the wall is configured to be contacted by the first pressing surface to limit movement of the first pressing surface toward the second pressing surface during a semiconductor bonding process.

Abstract: A thermocompression bonding (TCB) apparatus can include a wall having a height measured in a first direction and configured to be positioned between a first pressing surface and a second pressing surface of a semiconductor bonding apparatus. The apparatus can include a cavity at least partially surrounded by the wall, the cavity sized to receive a semiconductor substrate and a stack of semiconductor dies positioned between the semiconductor substrate and the first pressing surface, the stack of semiconductor dies and semiconductor substrate having a combined unpressed stack height as measured in the first direction. In some embodiments, the unpressed stack height is greater than the height of the wall, and the wall is configured to be contacted by the first pressing surface to limit movement of the first pressing surface toward the second pressing surface during a semiconductor bonding process.

Abstract: Semiconductor device packages and associated assemblies are disclosed herein. In some embodiments, the semiconductor device package includes a substrate having a first side and a second side opposite the first side, a first metallization layer positioned at the first side of the substrate, and a second metallization layer in the substrate and electrically coupled to the first metallization layer. The semiconductor device package further includes a metal bump electrically coupled to the first metallization layer and a divot formed at the second side of the substrate and aligned with the metal bump. The divot exposes a portion of the second metallization layer and enables the portion to electrically couple to another semiconductor device package.

Abstract: Semiconductor devices including a dual-sided redistribution structure and having low-warpage across all temperatures and associated systems and methods are disclosed herein. In one embodiment, a semiconductor device includes a first semiconductor die electrically coupled to a first side of a redistribution structure and a second semiconductor die electrically coupled to a second side of the redistribution structure opposite the first side. The semiconductor device also includes a first molded material on the first side, a second molded material on the second side, and conductive columns electrically coupled to the first side and extending through the first molded material. The first and second molded materials can have the same volume and/or coefficients of thermal expansion to inhibit warpage of the semiconductor device.

Abstract: Semiconductor device packages and associated assemblies are disclosed herein. In some embodiments, the semiconductor device package includes a substrate having a first side and a second side opposite the first side, a first metallization layer positioned at the first side of the substrate, and a second metallization layer in the substrate and electrically coupled to the first metallization layer. The semiconductor device package further includes a metal bump electrically coupled to the first metallization layer and a divot formed at the second side of the substrate and aligned with the metal bump. The divot exposes a portion of the second metallization layer and enables the portion to electrically couple to another semiconductor device package.

Abstract: An anisotropic conductive film (ACF) is formed with an ordered array of discrete regions that include a conductive carbon-based material. The discrete regions, which may be formed at small pitch, are embedded in at least one adhesive dielectric material. The ACF may be used to mechanically and electrically interconnect conductive elements of initially-separate semiconductor dice in semiconductor device assemblies. Methods of forming the ACF include forming a precursor structure with the conductive carbon-based material and then joining the precursor structure to a separately-formed structure that includes adhesive dielectric material to be included in the ACF. Sacrificial materials of the precursor structure may be removed and additional adhesive dielectric material formed to embed the discrete regions with the conductive carbon-based material in the adhesive dielectric material of the ACF.

Abstract: Semiconductor devices including a dual-sided redistribution structure and having low-warpage across all temperatures and associated systems and methods are disclosed herein. In one embodiment, a semiconductor device includes a first semiconductor die electrically coupled to a first side of a redistribution structure and a second semiconductor die electrically coupled to a second side of the redistribution structure opposite the first side. The semiconductor device also includes a first molded material on the first side, a second molded material on the second side, and conductive columns electrically coupled to the first side and extending through the first molded material. The first and second molded materials can have the same volume and/or coefficients of thermal expansion to inhibit warpage of the semiconductor device.

Abstract: A semiconductor device assembly has a first substrate, a second substrate, and an anisotropic conductive film. The first substrate includes a first plurality of connectors. The second substrate includes a second plurality of connectors. The anisotropic conductive film is positioned between the first plurality of connectors and the second plurality of connectors. The anisotropic conductive film has an electrically insulative material and a plurality of interconnects laterally separated by the electrically insulative material. The plurality of interconnects forms electrically conductive channels extending from the first plurality of connectors to the second plurality of connectors. A method includes connecting the plurality of interconnects to the first plurality of connectors and the second plurality of connectors, such that the electrically conductive channels are operable to conduct electricity from the first substrate to the second substrate.

Abstract: An anisotropic conductive film (ACF) is formed with an ordered array of discrete regions that include a conductive carbon-based material. The discrete regions, which may be formed at small pitch, are embedded in at least one adhesive dielectric material. The ACF may be used to mechanically and electrically interconnect conductive elements of initially-separate semiconductor dice in semiconductor device assemblies. Methods of forming the ACF include forming a precursor structure with the conductive carbon-based material and then joining the precursor structure to a separately-formed structure that includes adhesive dielectric material to be included in the ACF. Sacrificial materials of the precursor structure may be removed and additional adhesive dielectric material formed to embed the discrete regions with the conductive carbon-based material in the adhesive dielectric material of the ACF.

Abstract: A semiconductor device assembly has a first substrate, a second substrate, and an anisotropic conductive film. The first substrate includes a first plurality of connectors. The second substrate includes a second plurality of connectors. The anisotropic conductive film is positioned between the first plurality of connectors and the second plurality of connectors. The anisotropic conductive film has an electrically insulative material and a plurality of interconnects laterally separated by the electrically insulative material. The plurality of interconnects forms electrically conductive channels extending from the first plurality of connectors to the second plurality of connectors. A method includes connecting the plurality of interconnects to the first plurality of connectors and the second plurality of connectors, such that the electrically conductive channels are operable to conduct electricity from the first substrate to the second substrate.

Abstract: A solder removal apparatus is provided. The solder removal apparatus comprises a plurality of solder-interfacing protrusions extending from a body by a length. Each of the plurality of solder-interfacing protrusions is configured to remove a corresponding one of a plurality of solder features from a semiconductor device, where each of the plurality of solder features has a height and an amount of solder material.

Abstract: Semiconductor devices having one or more vias filled with a transparent and electrically conductive material are disclosed herein. In one embodiment, a semiconductor device includes a first semiconductor die stacked over a second semiconductor die. The first semiconductor die can include at least one via that is axially aligned with a corresponding via of the second semiconductor die. The vias of the first and second semiconductor dies can be filled with a transparent and electrically conductive material that both electrically and optically couples the first and second semiconductor dies.

Abstract: A semiconductor device includes a substrate; a die attached over the substrate; and a metal enclosure continuously encircling a space and extending vertically between the substrate and the die.