Patents by Inventor Mark Leonard O'Neill

Mark Leonard O'Neill has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210309885
    Abstract: Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2: SiN selectivity are also provided. The compositions use a unique combination of abrasives such as ceria coated silica particles and chemical additives such as maltitol, lactitol, maltotritol or combinations as oxide trench dishing reducing additives.
    Type: Application
    Filed: June 21, 2021
    Publication date: October 7, 2021
    Applicant: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill
  • Patent number: 11139162
    Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.
    Type: Grant
    Filed: September 24, 2019
    Date of Patent: October 5, 2021
    Assignee: Versum Materials US, LLC
    Inventors: Mark Leonard O'Neill, Manchao Xiao, Xinjian Lei, Richard Ho, Haripin Chandra, Matthew R. MacDonald, Meiliang Wang
  • Patent number: 11078417
    Abstract: Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2: SiN selectivity are also provided. The compositions use unique chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(?)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.
    Type: Grant
    Filed: June 24, 2019
    Date of Patent: August 3, 2021
    Assignee: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill
  • Patent number: 11072726
    Abstract: Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2: SiN selectivity are also provided. The compositions use a unique combination of abrasives such as ceria coated silica particles and chemical additives such as maltitol, lactitol, maltotritol or combinations as oxide trench dishing reducing additives.
    Type: Grant
    Filed: June 24, 2019
    Date of Patent: July 27, 2021
    Assignee: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill
  • Publication number: 20210179890
    Abstract: The present invention discloses STI CMP polishing compositions, methods and systems that significantly reduce oxide trench dishing and improve over-polishing window stability in addition to provide high and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable high selectivity of SiO2:SiN through the use of an unique combination of ceria inorganic oxide particles, such as ceria coated silica particles as abrasives, and an oxide trench dishing reducing additive of poly(methacrylic acids), its derivatives, its salts, or combinations thereof.
    Type: Application
    Filed: December 12, 2019
    Publication date: June 17, 2021
    Applicant: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Joseph D. Rose, Hongjun Zhou, Krishna P. Murella, Mark Leonard O'Neill
  • Patent number: 10991571
    Abstract: Atomic layer deposition (ALD) process formation of silicon oxide with temperature>500° C. is disclosed.
    Type: Grant
    Filed: January 23, 2019
    Date of Patent: April 27, 2021
    Assignee: Versum Materials US, LLC
    Inventors: Haripin Chandra, Meiliang Wang, Manchao Xiao, Xinjian Lei, Ronald Martin Pearlstein, Mark Leonard O'Neill
  • Patent number: 10920106
    Abstract: Provided are Chemical Mechanical Planarization (CMP) formulations that offer high and tunable Cu removal rates and low copper dishing for the broad or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing formulations comprise water; abrasive; single chelator, dual chelators or tris chelators; morpholino family compounds as Cu dishing reducing agents. Additionally, organic quaternary ammonium salt, corrosion inhibitor, oxidizer, pH adjustor and biocide can be used in the formulations.
    Type: Grant
    Filed: September 9, 2019
    Date of Patent: February 16, 2021
    Assignee: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Mark Leonard O'Neill
  • Patent number: 10894906
    Abstract: Composite particles with lower mean particle size and smaller size distribution are obtained through refining treatments. The refined composite particles, such as ceria coated silica particles are used in Chemical Mechanical Planarization (CMP) compositions to offer higher removal rate; very low within wafer (WWNU) for removal rate, low dishing and low defects for polishing oxide films.
    Type: Grant
    Filed: August 6, 2019
    Date of Patent: January 19, 2021
    Assignee: Versum Materials US, LLC
    Inventors: Hongjun Zhou, John Edward Quincy Hughes, Krishna P. Murella, Reinaldo Mario Machado, Mark Leonard O'Neill, Dnyanesh Chandrakant Tamboli
  • Publication number: 20200277514
    Abstract: Provided are Chemical Mechanical Planarization (CMP) compositions that offer very high and tunable Cu removal rates for the broad bulk or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing compositions comprise solvent, abrasive, oxidizer, at least two chelators selected from the group consisting of amino acids, amino acid derivatives, organic amine, and combinations therefore; wherein at least one chelator is an amino acid or an amino acid derivative. Organic quaternary ammonium salt, corrosion inhibitor, pH adjustor and biocide can be used in the compositions.
    Type: Application
    Filed: January 24, 2020
    Publication date: September 3, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Xiaobo Shi, James Allen Schlueter, Mark Leonard O'Neill
  • Patent number: 10745589
    Abstract: Chemical mechanical polishing (CMP) compositions, methods and systems for polish cobalt or cobalt-containing substrates are provided. The CMP compositions comprise ?-alanine, abrasive particles, a salt of phosphate, corrosion inhibitor, oxidizer and water. The cobalt chemical mechanical polishing compositions provide high removal rate of Co as well as very high selectivity of Co film vs. dielectric film, such as TEOS, SixNy (with 1.0<x<3.0, 1.33<y<4.0), low-k, and ultra low-k films.
    Type: Grant
    Filed: June 6, 2017
    Date of Patent: August 18, 2020
    Assignee: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Joseph Rose, Timothy Joseph Clore, James Allen Schlueter, Malcolm Grief, Mark Leonard O'Neill
  • Publication number: 20200239736
    Abstract: Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic metal oxide particles, such as ceria-coated silica; and dual chemical additives for providing the tunable oxide film removal rates and tunable SiN film removal rates. Chemical additives comprise at least one nitrogen-containing aromatic heterocyclic compound and at least one non-ionic organic molecule having more than one hydroxyl functional group organic.
    Type: Application
    Filed: January 8, 2020
    Publication date: July 30, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill
  • Publication number: 20200239735
    Abstract: Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic metal oxide particles, such as ceria-coated silica; and dual chemical additives for providing high oxide film removal rate. The dual chemical additives comprise gelatin compounds possessing negative and positive charges on the same molecule, and non-ionic organic molecules having multi hydroxyl functional groups in the same molecule.
    Type: Application
    Filed: January 8, 2020
    Publication date: July 30, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill
  • Patent number: 10669449
    Abstract: Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer low dishing, low defects, and high removal rate for polishing oxide films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.
    Type: Grant
    Filed: September 9, 2018
    Date of Patent: June 2, 2020
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Hongjun Zhou, Jo-Ann Theresa Schwartz, Malcolm Grief, Xiaobo Shi, Krishna P. Murella, Steven Charles Winchester, John Edward Quincy Hughes, Mark Leonard O'Neill, Andrew J. Dodd, Dnyanesh Chandrakant Tamboli, Reinaldo Mario Machado
  • Publication number: 20200131404
    Abstract: Present invention provides Chemical Mechanical Planarization Polishing (CMP) compositions for Shallow Trench Isolation (STI) applications. The CMP compositions contain ceria coated inorganic oxide particles as abrasives, such as ceria-coated silica particles; chemical additive selected from the group consisting of an organic acetylene molecule containing an acetylene bond and at least two or multi ethoxylate functional groups with terminal hydroxyl groups, an organic molecule with at least two or multi hydroxyl functional groups in the same molecule, and combinations thereof; water soluble solvent; and optionally biocide and pH adjuster; wherein the composition has a pH of 2 to 12, preferably 3 to 10, and more preferably 4 to 9.
    Type: Application
    Filed: October 27, 2019
    Publication date: April 30, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill
  • Publication number: 20200115590
    Abstract: Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer low dishing, low defects, and high removal rate for polishing oxide films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.
    Type: Application
    Filed: September 9, 2018
    Publication date: April 16, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Hongjun Zhou, Jo-Ann Theresa Schwartz, Malcolm Grief, Xiaobo Shi, Krishna P. Murella, Steven Charles Winchester, John Edward Quincy Hughes, Mark Leonard O'Neill, Andrew J. Dodd, Dnyanesh Chandrakant Tamboli, Reinaldo Mario Machado
  • Publication number: 20200095502
    Abstract: Present invention provides Chemical Mechanical Planarization Polishing (CMP) compositions for Shallow Trench Isolation (STI) applications. The CMP compositions contain ceria coated inorganic oxide particles as abrasives, such as ceria-coated silica particles or any other ceria-coated inorganic oxide particles as core particles; suitable chemical additives comprising at least one organic carboxylic acid group, at least one carboxylate salt group or at least one carboxylic ester group and two or more hydroxyl functional groups in the same molecule; and a water soluble solvent; and optionally biocide and pH adjuster; wherein the composition has a pH of 2 to 12, preferably 3 to 10, and more preferably 4 to 9.
    Type: Application
    Filed: September 20, 2019
    Publication date: March 26, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Joseph D. Rose, Krishna P. Murella, Hongjun Zhou, Mark Leonard O'Neill
  • Publication number: 20200048496
    Abstract: The present invention provides Chemical Mechanical Planarization Polishing (CMP) compositions for Shallow Trench Isolation (STI) applications. The CMP compositions contain ceria coated inorganic metal oxide particles as abrasives, such as ceria-coated silica particles; chemical additive selected from the first group of non-ionic organic molecules multi hydroxyl functional groups in the same molecule; chemical additives selected from the second group of aromatic organic molecules with sulfonic acid group or sulfonate salt functional groups and combinations thereof; water soluble solvent; and optionally biocide and pH adjuster; wherein the composition has a pH of 2 to 12, preferably 3 to 10, and more preferably 4 to 9.
    Type: Application
    Filed: August 6, 2019
    Publication date: February 13, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill
  • Publication number: 20200051811
    Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.
    Type: Application
    Filed: September 24, 2019
    Publication date: February 13, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Mark Leonard O'Neill, Manchao Xiao, Xinjian Lei, Richard Ho, Haripin Chandra, Matthew R. MacDonald, Meiliang Wang
  • Publication number: 20200032107
    Abstract: Provided are Chemical Mechanical Planarization (CMP) formulations that offer high and tunable Cu removal rates and low copper dishing for the broad or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing formulations comprise water; abrasive; single chelator, dual chelators or tris chelators; morpholino family compounds as Cu dishing reducing agents. Additionally, organic quaternary ammonium salt, corrosion inhibitor, oxidizer, pH adjustor and biocide can be used in the formulations.
    Type: Application
    Filed: September 9, 2019
    Publication date: January 30, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Mark Leonard O'Neill
  • Publication number: 20200024515
    Abstract: This invention pertains to slurries, methods and systems that can be used in chemical mechanical planarization (CMP) of tungsten containing semiconductor device. Using the CMP slurries with additives to counter lowering of pH by tungsten polishing byproducts and maintain pH 4 or higher, the erosion of dense metal (such as tungsten) structures can be greatly diminished.
    Type: Application
    Filed: July 12, 2019
    Publication date: January 23, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Chun Lu, Xiaobo Shi, Dnyanesh Chandrakant Tamboli, Reinaldo Mario Machado, Mark Leonard O'Neill, Matthias Stender