Patents by Inventor Mark Leonard O'Neill
Mark Leonard O'Neill has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160203975Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.Type: ApplicationFiled: March 18, 2016Publication date: July 14, 2016Applicant: Air Products and Chemicals, Inc.Inventors: Manchao Xiao, Xinjian Lei, Daniel P. Spence, Haripin Chandra, Bing Han, Mark Leonard O'Neill, Steven Gerard Mayorga, Anupama Mallikarjunan
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Patent number: 9337018Abstract: A method for forming a silicon-containing film on at least one surface of a substrate by a deposition process selected from a chemical vapor deposition process and an atomic layer deposition process, the method comprising: providing the at least one surface of the substrate in a reaction chamber; introducing at least one organoaminodisilane precursor comprising a Si—N bond, a Si—Si bond, and a Si—H3 group represented by the following Formula I below: wherein R1 and R2 are defined herein; and introducing a nitrogen-containing source into the reactor wherein the at least one organoaminodisilane precursor and the nitrogen-containing source react to form the film on the at least one surface.Type: GrantFiled: May 24, 2013Date of Patent: May 10, 2016Assignee: Air Products and Chemicals, Inc.Inventors: Manchao Xiao, Xinjian Lei, Daniel P. Spence, Haripin Chandra, Bing Han, Mark Leonard O'Neill, Steven Gerard Mayorga, Anupama Mallikarjunan
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Publication number: 20160122590Abstract: Slurries and associated methods and systems for the chemical mechanical planarization (CMP) of tungsten-containing films on semiconductor wafers are described. The slurries comprise abrasive particles, activator-containing particles, peroxygen oxidizer, pH adjustor, and the remaining being water. The slurries have a pH in the range of 4 to 10; preferably 5 to 9; more preferably 6 to 8.Type: ApplicationFiled: October 15, 2015Publication date: May 5, 2016Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Blake J. Lew, Krishna P. Murella, Malcolm Grief, Xiaobo Shi, Dnyanesh Chandrakant Tamboli, Mark Leonard O'Neill
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Patent number: 9293361Abstract: The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removal of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.Type: GrantFiled: July 3, 2014Date of Patent: March 22, 2016Assignee: Air Products and Chemicals, Inc.Inventors: Raymond Nicholas Vrtis, Dingjun Wu, Mark Leonard O'Neill, Mark Daniel Bitner, Jean Louise Vincent, Eugene Joseph Karwacki, Aaron Scott Lukas
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Publication number: 20160049293Abstract: Described herein is a method and composition comprising same for sealing the pores of a porous low dielectric constant (“low k”) layer by providing an additional thin dielectric film, referred to herein as a pore sealing layer, on at least a surface of the porous, low k layer to prevent further loss of dielectric constant of the underlying layer. In one aspect, the method comprises: contacting a porous low dielectric constant film with at least one organosilicon compound to provide an absorbed organosilicon compound and treating the absorbed organosilicon compound with ultraviolet light, plasma, or both, and repeating until a desired thickness of the pore sealing layer is formed.Type: ApplicationFiled: August 7, 2015Publication date: February 18, 2016Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Jianheng Li, Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Xinjian Lei, Mark Leonard O'Neill, Xuezhong Jiang
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Publication number: 20160027657Abstract: Chemical mechanical polishing (CMP) compositions, methods and systems for polish cobalt or cobalt-containing substrates are provided. Dual, or at least two chelators were used in the CMP polishing compositions as complexing agents for achieving the unique synergetic effects to afford high, tunable Co removal rates and with low static etch rates on Co film surface for the efficient Co corrosion protection during CMP process. The cobalt chemical mechanical polishing compositions also provide very high selectivity of Co film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric film, such as TEOS, SiNx, low-k, and ultra low-k films.Type: ApplicationFiled: July 15, 2015Publication date: January 28, 2016Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Xiaobo Shi, James Allen Schlueter, Mark Leonard O'Neill
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Patent number: 9243324Abstract: Methods for forming non-oxygen containing silicon-based films, that contain >50 atomic % of silicon, are provided herein. In one aspect, the silicon-based films have a composition SixCyNz wherein x is about 51 to 100, y is 0 to 49, and z is 0 to 50 atomic weight (wt.) percent (%) as measured by XPS. In one embodiment, the non-oxygen silicon-based films were deposited using at least one organosilicon precursor having at least two SiH3 groups with at least one C2-3 linkage between silicon atoms such as 1,4-disilabutane.Type: GrantFiled: July 24, 2013Date of Patent: January 26, 2016Assignee: Air Products and Chemicals, Inc.Inventors: Heather Regina Bowen, Jianheng Li, Mark Leonard O'Neill, Manchao Xiao, Andrew David Johnson, Xinjian Lei
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Patent number: 9212420Abstract: A chemical vapor deposition (CVD) method for depositing a thin film on a surface of a substrate is described. The CVD method comprises disposing a substrate on a substrate holder in a process chamber, and introducing a process gas to the process chamber, wherein the process gas comprises a chemical precursor. The process gas is exposed to a non-ionizing heat source separate from the substrate holder to cause decomposition of the chemical precursor. A thin film is deposited upon the substrate.Type: GrantFiled: March 23, 2010Date of Patent: December 15, 2015Assignee: Tokyo Electron LimitedInventors: Eric M. Lee, Raymond Nicholas Vrtis, Mark Leonard O'Neill, Patrick Timothy Hurley, Jacques Faguet, Takashi Matsumoto, Osayuki Akiyama
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Patent number: 9200167Abstract: Alkoxyaminosilane compounds having formula I, and processes and compositions for depositing a silicon-containing film, are described herein: (R1R2)NSiR3OR4OR5??Formula (I) wherein R1 is independently selected from a linear or branched C1 to C10 alkyl group; a C2 to C12 alkenyl group; a C2 to C12 alkynyl group; a C4 to C10 cyclic alkyl group; and a C6 to C10 aryl group; R2 and R3 are each independently selected from hydrogen; a linear or branched C1 to C10 alkyl group; a C3 to C12 alkenyl group, a C3 to C12 alkynyl group, a C4 to C10 cyclic alkyl group, and a C6 to C10 aryl group; and R4 and R5 are each independently selected from a linear or branched C1 to C10 alkyl group; a C2 to C12 alkenyl group; a C2 to C12 alkynyl group; a C4 to C10 cyclic alkyl group; and a C6 to C10 aryl group.Type: GrantFiled: January 18, 2013Date of Patent: December 1, 2015Assignee: Air Products and Chemicals, Inc.Inventors: Daniel P. Spence, Ronald Martin Pearlstein, Xinjian Lei, Manchao Xiao, Richard Ho, Mark Leonard O'Neill, Haripin Chandra
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Publication number: 20150275355Abstract: Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one precursor having the following formula: R1nSi(NR2R3)mH4-m-n wherein R1 is independently selected from a linear C1 to C6 alkyl group, a branched C2 to C6 alkyl group, a C3 to C6 cyclic alkyl group, a C2 to C6 alkenyl group, a C3 to C6 alkynyl group, and a C4 to C10 aryl group; wherein R2 and R3 are each independently selected from hydrogen, a C1 to C6 linear alkyl group, a branched C2 to C6 alkyl group, a C3 to C6 cyclic alkyl group, a C2 to C6 alkenyl group, a C3 to C6 alkynyl group, and a C4 to C10 aryl group, wherein R2 and R3 are linked or, are not linked, to form a cyclic ring structure; n=1, 2, 3; and m=1, 2.Type: ApplicationFiled: March 18, 2015Publication date: October 1, 2015Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Anupama Mallikarjunan, Haripin Chandra, Manchao Xiao, Xinjian Lei, Kirk Scott Cuthill, Mark Leonard O'Neill
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Publication number: 20150249007Abstract: Described herein are methods of forming dielectric films such as non-porous dielectric films, comprising silicon, oxide, and optionally nitrogen, carbon, hydrogen, and boron. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer.Type: ApplicationFiled: February 28, 2014Publication date: September 3, 2015Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Manchao Xiao, Xinjian Lei, Bing Han, Mark Leonard O'Neill
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Patent number: 9061317Abstract: A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor, wherein the porogen is a C4 to C14 cyclic hydrocarbon compound having a non-branching structure and a degree of unsaturation equal to or less than 2; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the labile organic material to provide the porous film with pores and a dielectric constant less than 2.6.Type: GrantFiled: April 5, 2012Date of Patent: June 23, 2015Assignee: Air Products and Chemicals, Inc.Inventors: Raymond Nicholas Vrtis, Mark Leonard O'Neill, Jean Louis Vincent, Aaron Scott Lukas, Mary Kathryn Haas
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Patent number: 9005719Abstract: Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film.Type: GrantFiled: May 30, 2014Date of Patent: April 14, 2015Assignee: Air Products and Chemicals, Inc.Inventors: Manchao Xiao, Xinjian Lei, Bing Han, Mark Leonard O'Neill, Ronald Martin Pearlstein, Richard Ho, Haripin Chandra, Agnes Derecskei-Kovacs
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Publication number: 20150099375Abstract: Described herein are methods for forming silicon nitride films. In one aspect, there is provided a method of forming a silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one organoaminosilane having a least one SiH3 group described herein wherein the at least one organoaminosilane reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm2.Type: ApplicationFiled: September 26, 2014Publication date: April 9, 2015Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Chandra Haripin, Anupama Mallikarjunan, Xinjian Lei, Moo-Sung Kim, Kirk Scott Cuthill, Mark Leonard O'Neill
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Patent number: 8993072Abstract: Described herein are precursors and methods of forming films. In one aspect, there is provided a precursor having Formula I: XmR1nHpSi(NR2R3)4-m-n-p??I wherein X is selected from Cl, Br, I; R1 is selected from linear or branched C1-C10 alkyl group, a C2-C12 alkenyl group, a C2-C12 alkynyl group, a C4-C10 cyclic alkyl, and a C6-C10 aryl group; R2 is selected from a linear or branched C1-C10 alkyl, a C3-C12 alkenyl group, a C3-C12 alkynyl group, a C4-C10 cyclic alkyl group, and a C6-C10 aryl group; R3 is selected from a branched C3-C10 alkyl group, a C3-C12 alkenyl group, a C3-C12 alkynyl group, a C4-C10 cyclic alkyl group, and a C6-C10 aryl group; m is 1 or 2; n is 0, 1, or 2; p is 0, 1 or 2; and m+n+p is less than 4, wherein R2 and R3 are linked or not linked to form a ring.Type: GrantFiled: September 18, 2012Date of Patent: March 31, 2015Assignee: Air Products and Chemicals, Inc.Inventors: Manchao Xiao, Xinjian Lei, Mark Leonard O'Neill, Bing Han, Ronald Martin Pearlstein, Haripin Chandra, Heather Regina Bowen, Agnes Derecskei-Kovacs
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Publication number: 20150087139Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.Type: ApplicationFiled: September 11, 2014Publication date: March 26, 2015Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Mark Leonard O'Neill, Manchao Xiao, Xinjian Lei, Richard Ho, Haripin Chandra, Matthew R. MacDonald, Meiliang Wang
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Patent number: 8987039Abstract: A process is provided for making a photovoltaic device comprising a silicon substrate comprising a p-n junction, the process comprising the steps of: forming an amorphous silicon carbide antireflective coating over at least one surface of the silicon substrate by chemical vapor deposition of a composition comprising a precursor selected from the group consisting of an organosilane, an aminosilane, and mixtures thereof, wherein the amorphous silicon carbide antireflective coating is a film represented by the formula SivCxNuHyFz, wherein v+x+u+y+z=100%, v is from 1 to 35 atomic %, x is from 5 to 80 atomic %, u is from 0 to 50 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %.Type: GrantFiled: October 2, 2008Date of Patent: March 24, 2015Assignee: Air Products and Chemicals, Inc.Inventors: Patrick Timothy Hurley, Robert Gordon Ridgeway, Raymond Nicholas Vrtis, Mark Leonard O'Neill, Andrew David Johnson
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Patent number: 8951342Abstract: A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the porogen to provide the porous film with pores and a dielectric constant less than 2.6.Type: GrantFiled: November 1, 2011Date of Patent: February 10, 2015Assignee: Air Products and Chemicals, Inc.Inventors: Raymond Nicholas Vrtis, Mark Leonard O'Neill, Jean Louise Vincent, Aaron Scott Lukas, Mary Kathryn Haas
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Patent number: 8940648Abstract: A method for depositing a silicon containing film on a substrate using an organoaminosilane is described herein. The organoaminosilanes are represented by the formulas: wherein R is selected from a C1-C10 linear, branched, or cyclic, saturated or unsaturated alkyl group with or without substituents; a C5-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents, or a silyl group in formula C with or without substituents, R1 is selected from a C3-C10 linear, branched, cyclic, saturated or unsaturated alkyl group with or without substituents; a C6-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents, a hydrogen atom, a silyl group with substituents and wherein R and R1 in formula A can be combined into a cyclic group and R2 representing a single bond, (CH2), chain, a ring, C3-C10 branched alkyl, SiR2, or SiH2.Type: GrantFiled: August 12, 2013Date of Patent: January 27, 2015Assignee: Air Products and Chemicals, Inc.Inventors: Manchao Xiao, Xinjian Lei, Heather Regina Bowen, Mark Leonard O'Neill
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Publication number: 20150021599Abstract: Described herein are apparatus comprising one or more silicon-containing layers and a metal oxide layer. Also described herein are methods for forming one or more silicon-containing layers to be used, for example, as passivation layers in a display device. In one particular aspect, the apparatus comprises a transparent metal oxide layer, a silicon oxide layer and a silicon nitride layer. In this or other aspects, the apparatus is deposited at a temperature of 350° C. or below. The silicon-containing layers described herein comprise one or more of the following properties: a density of about 1.9 g/cm3 or greater; a hydrogen content of about 4×1022 cm?3 or less, and a transparency of about 90% or greater at 400-700 nm as measured by a UV-visible light spectrometer.Type: ApplicationFiled: March 8, 2013Publication date: January 22, 2015Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Robert Gordon Ridgeway, Andrew David Johnson, Anupama Mallikarjunan, Raymond Nicholas Vrtis, Xinjian Lei, Mark Leonard O'Neill, Manchao Xiao, Jianheng Li, Michael T. Savo