Abstract: A system and method for managing access of at least one mobile machine to a load resource having a loading machine including a queue manager adapted to deliver a queue position request signal, a resource manager adapted to control access to the load resource, and a load manager adapted to determine a load point for a mobile machine.

Abstract: The invention is a system and method for managing a resource having multiple entry points. Each mobile machine includes a queue manager for generating a queue position request upon approach to the resource. A resource manager establishes queues, one for each entry point to the resource, to control access to the resource. Upon receiving a queue position request from an approaching mobile machine, the resource manager determines which queue to place the mobile machine, and then generates a queue position and sends a queue position signal to the approaching mobile machine.

Abstract: A control system for lubricating a work machine is provided. The control system includes a lubricant distribution system, a charging system adapted to drive the lubricant distribution system, a sensor for determining the operating state of the charging system, and a device for calculating a time interval being dependent upon a previous lubricating event. The control also includes a device for producing a lubrication signal in response to the time interval reaching a predetermined interval constant.

Abstract: The present invention relates to improved injectors for use in CVD reactor systems, and more specifically for use in epitaxial deposition systems for processing a single wafer-at-a-time. The improved injectors of the present invention are used to provide a predetermined desired shaped velocity profile for the injected reactant gases for insuring a more uniform deposition on a single wafer to be processed within the reactor system. In the first embodiment, the reactant gas is fed into a horizontal gas distribution manifold cavity and distributed horizontally in both directions. The gas then passes through a manifold wall having a pattern of predetermined sized and spaced apertures therein. The size of the apertures and the distribution of these sizes, shapes the resultant velocity profile to a desired pattern.

Abstract: A cold fluid protection circuit is provided for controlling the rate of fluid flow in a hydraulic system in response to the temperature of the oil in a reservoir. The subject invention includes a temperature sensor operative to sense the temperature of the fluid in the reservoir and deliver an electrical signal representative thereof to a controller. The controller processes the sensed temperature with respect to the rate of flow in the hydraulic system that is returning to the reservoir from an actuator through a fluid conditioning mechanism and proportionally reduces the rate of flow therethrough by controllably reducing the displacement of a directional valve mechanism in response to the sensed temperature.

Abstract: The present invention relates to improved injectors for use in CVD reactor systems, and more specifically for use in epitaxial deposition systems for processing a single wafer-at-a-time. The improved injectors of the present invention are used to provide a predetermined desired shaped velocity profile for the injected reactant gases for insuring a more uniform deposition on a single wafer to be processed within the reactor system. In the first embodiment, the reactant gas is fed into a horizontal gas distribution manifold cavity and distributed horizontally in both directions. The gas then passes through a manifold wall having a pattern of predetermined sized and spaced apertures therein. The size of the apertures and the distribution of these sizes, shapes the resultant velocity profile to a desired pattern.

Abstract: A steering control system for an autonomous machine has a manual steering control valve for directing fluid from a pump to either a head end chamber or a rod end chamber of a hydraulic steering actuator. In one embodiment, an electrically actuated steering valve device is disposed in series flow relationship between the pump and the manual steering control valve and is operative to direct fluid from the pump to the head end and rod end chambers. In another embodiment, a electrically actuated device mechanically actuates the manual steering control valve for steering the machine.

Abstract: A system for controlling autonomous operation of a vehicle in response to speed and steering angle request signals from a navigator allows manual operation of the vehicle. The system includes a machine control module, an engine control module, and a transmission control module. An auto/manual select signal indicates to the machine control module whether operation should be in a fully autonomous mode or a manual mode. In the autonomous mode, a navigator produces a speed request signal and a steering angle request signal for the vehicle. The machine control module receives the speed and steering angle request signals from the navigator. From these inputs, the machine control module produces an engine RPM (revolutions per minute) control signal for the engine control module, a transmission control signal for the transmission control module, a brake control signal, and a steering angle control signal. In the manual mode, the machine control module will not interfere with normal, manual (i.e.

Abstract: The present invention provides a general purpose driver circuit. The driver circuit is connected to a load. The driver circuit includes a controller for producing a control signal indicative of a desired output current. The driver circuit generates an output current having a magnitude responsive to the magnitude of the control signal. The driver circuit produces a system voltage feedback signal and an output voltage feedback signal and responsively performs output load condition diagnostics.

Abstract: The present invention relates to improved injectors for use in CVD reactor systems, and more specifically for use in epitaxial deposition systems for processing a single wafer-at-a-time. The improved injectors of the present invention are used to provide a predetermined desired shaped velocity profile for the injected reactant gases for insuring a more uniform deposition on a single wafer to be processed within the reactor system. In the first embodiment, the reactant gas is fed into a horizontal gas distribution manifold cavity and distributed horizontally in both directions. The gas then passes through a manifold wall having a pattern of predetermined sized and spaced apertures therein. The size of the apertures and the distribution of these sizes, shapes the resultant velocity profile to a desired pattern.

Abstract: An appparatus for receiving signals from any of a plurality of sensor types is provided and includes pull-up circuitry connected to a circuit input; data edge conditioning circuitry having a digital output and an input connected to said circuit input; and an analog output connected to said circuit input and said pull-up circuitry.

Abstract: This invention discloses a system for chemically depositing various materials carried by a reactant gas onto substrates for manufacturing semiconductor devices. The system includes special loading and unloading sub-systems for placement of substrates to be processed into the system and subsequent extraction without contamination of the system. A special substrate handling sub-system is provided for moving the substrates to and from at least one processing sub-system without physically contacting the planar surfaces of the substrates. The processing sub-system includes a horizontal gas flow reaction chamber having a rotatable susceptor therein for rotating the single substrate supportable thereon about an axis that is normal to the center of the substrate for averaging of the temperature and reactant gas concentration variables.

Abstract: The present invention relates to improved injectors for use in CVD reactor systems, and more specifically for use in epitaxial deposition systems for processing a single wafer-at-a-time. The improved injectors of the present invention are used to provide a predetermined desired shaped velocity profile for the injected reactant gases for insuring a more uniform deposition on a single wafer to be processed within the reactor system. In the first embodiment, the reactant gas is fed into a horizontal gas distribution manifold cavity and distributed horizontally in both directions. The gas then passes through a manifold wall having a pattern of predetermined sized and spaced apertures therein. The size of the apertures and the distribution of these sizes, shapes the resultant velocity profile to a desired pattern.

Abstract: The present invention relates to improved injectors for use in CVD reactor systems, and more specifically for use in epitaxial deposition systems for processing a single water-at-a-time. The improved injectors of the present invention are used to provide a predetermined desired shaped velocity profile for the injected reactant gases for insuring a more uniform deposition on a single wafer to be processed within the reactor system. In the first embodiment, the reactant gas is fed into a horizontal gas distribution manifold cavity and distributed horizontally in both directions. The gas then passes through a manifold wall having a pattern of predetermined sized and spaced apertures therein. The size of the apertures and the distribution of these sizes, shapes the resultant velocity profile to a desired pattern.

Abstract: A method for loading a substrate into a receiving chamber upon a positionable platform, which platform is in sealed relationship with the receiving chamber, permits purging of the receiving chamber prior to transport of the loaded substrate(s) to a feed chamber. The platform is positioned from the receiving chamber into the feed chamber to off load the substrates. A cassette containing a plurality of stacked substrates may be loaded upon the platform to transport a plurality of substrates into the feed chamber.

Abstract: Each substrate is loaded into a receiving chamber upon a positionable platform, which platform is in sealed relationship with the receiving chamber to permit purging of the receiving chamber prior to transport of the loaded substrate(s) to a feed chamber. The platform is positioned from the receiving chamber into the feed chamber wherefrom the substrates are off loaded. A cassette containing a plurality of stacked substrates may be loaded upon the platform to transport a plurality of substrates into the feed chamber.

Abstract: A substrate loading subsystem receives substrates from an external source and delivers them to an input port. A substrate pickup transports the substrates serially from the input port to a delivery port of a processing subsystem wherein the substrates are subjected to a reactant gas in a reaction chamber. After completion of the chemical vapor deposition, the substrate pick up serially transports the substrates to an outlet port wherefrom they are off loaded.

Abstract: The present invention relates to a high throughput single crystal epitaxial deposition process which achieves increased uniformity, both wafer to wafer and across the wafer surface. There is provided an epitaxial deposition process characterized by low-level cooling periods which minimize temperature changes between deposition cycles and inter-cycle cleaning so that each new wafer is presented with a substantially equivalent deposition environment.

Abstract: This invention discloses a system for chemically depositing various materials carried by a reactant gas onto substrates for manufacturing semiconductor devices. The system includes special loading and unloading sub-system for placement of substrates to be processed into the system and subsequent extraction without contamination of the system. A special substrate handling sub-system is provided for moving the substrates to and from at least one processing sub-system without physically contacting the planar surfaces of the substrates. The processing sub-system includes a horizontal gas flow reaction chamber having a rotatable susceptor therein for rotating the single substrate supportable thereon about an axis that is normal to the center of the substrate for averaging of the temperature and reactant gas concentration variables.