Abstract: A package structure includes a plurality of die carriers identical to each other. The respective features in each of the plurality of die carriers vertically overlap corresponding features in other ones of the plurality of die carriers. Each of the plurality of die carriers includes a plurality of through-substrate vias (TSVs) including a plurality of data buses. The plurality of die carriers is stacked and electrically connected to each other through the plurality of TSVs. The package structure further includes a plurality of device dies. Each of the plurality of device dies is bonded to one of the plurality of die carriers. Each of the plurality of data buses is configured to dedicate to data transmission of one of the plurality of device dies.

Abstract: A method of designing an integrated circuit includes providing an integrated circuit design including a power network. A voltage drop mitigation system is provided, which includes a power strap enhancer configured to automatically find a source node and a terminal node in the power network. A redundant strap for the power network using the voltage drop mitigation system is added, wherein the redundant strap interconnects the source node and the terminal node. After the step of adding the redundant strap, dummy patterns may be added.

Abstract: Structure and methods for a compensated bandgap reference circuit. A first integrated circuit die having a first bandgap reference circuit with a non-zero temperature coefficient; and having a first output reference signal is provided, a second integrated circuit die having a second bandgap reference circuit with a non-zero temperature coefficient that is of opposite polarity from the temperature coefficient of the first bandgap reference circuit, and having a second output reference signal is provided; an adder circuit disposed on at least one of the first and second integrated circuit dies combines the first and second output reference signals, and outputs a combined reference signal; and connectors for connecting the first and second output signals to the adder circuit are provided. Methods are disclosed for pairing integrated circuit dies with bandgap reference circuits and coupling the dies to form temperature compensated signals.

Abstract: A package structure includes a networking unit including a plurality of switches/routers and a plurality of network interface units coupled to the plurality of switches/routers, and an interposer including a plurality of metal connections. The interposer is substantially free from functional elements built therein. A functional element is outside of, and bonded onto, the interposer, wherein the functional element is electrically coupled to the networking unit through the plurality of metal connections.

Abstract: An integrated circuit system having an interposer and an integrated circuit with first and second bond pads, the integrated circuit die bonded to the interposer using the first bond pads. The integrated circuit having circuit blocks, that operate at different operating voltages and voltage regulator modules die bonded to the second bond pads of the integrated circuit. The voltage regulator modules converting a power supply voltage to the operating voltage of a respective circuit block and supply the respective operating voltage to the circuit block via the second bond pads.

Abstract: A method and apparatus for distributing clock signals throughout an integrated circuit is provided. An embodiment comprises a distribution die which contains either the clock signal distribution network by itself, or the clock signal distribution network in tandem with a clock signal generator. The distribution die is electrically connected through an interface technology, such as microbumps, to route the clock signals to the functional circuits on a separate functional die. Alternatively, the distribution die could be electrically connected to more than one die at a time, using vias through the distribution die to route the clock signals to the different die. This separate distribution die reduces the coupling between lines and also helps to prevent signal skew as the signal moves through the distribution network.

Abstract: A method of designing an integrated circuit includes providing an integrated circuit design including a power network. A voltage drop mitigation system is provided, which includes a power strap enhancer configured to automatically find a source node and a terminal node in the power network. A redundant strap for the power network using the voltage drop mitigation system is added, wherein the redundant strap interconnects the source node and the terminal node. After the step of adding the redundant strap, dummy patterns may be added.

Abstract: A method and apparatus for distributing clock signals throughout an integrated circuit is provided. An embodiment comprises a distribution die which contains either the clock signal distribution network by itself, or the clock signal distribution network in tandem with a clock signal generator. The distribution die is electrically connected through an interface technology, such as microbumps, to route the clock signals to the functional circuits on a separate functional die. Alternatively, the distribution die could be electrically connected to more than one die at a time, using vias through the distribution die to route the clock signals to the different die. This separate distribution die reduces the coupling between lines and also helps to prevent signal skew as the signal moves through the distribution network.

Abstract: A method and apparatus for distributing clock signals throughout an integrated circuit is provided. An embodiment comprises a distribution die which contains either the clock signal distribution network by itself, or the clock signal distribution network in tandem with a clock signal generator. The distribution die is electrically connected through an interface technology, such as microbumps, to route the clock signals to the functional circuits on a separate functional die. Alternatively, the distribution die could be electrically connected to more than one die at a time, using vias through the distribution die to route the clock signals to the different die. This separate distribution die reduces the coupling between lines and also helps to prevent signal skew as the signal moves through the distribution network.

Abstract: A through-silicon via (TSV) enabled twisted pair is provided. A pair of complementary conductive lines is provided as a twisted pair. Each of the conductive lines of the twisted pair is formed by alternating conductive sections on opposing sides of a substrate. The alternating conductive sections are electrically coupled by at least in part a TSV. The conductive lines overlap or are entwined such the point at which the conductive lines cross, the conductive lines are on opposing sides of the substrate. The conductive lines are weaved in this manner for the length of the conductive trace.

Abstract: A method for forming a single die includes forming at least one first active device over a first substrate and at least one first metallic layer coupled to the first active device. At least one second metallic layer is formed over a second substrate, wherein the second substrate does not include any active device. The at least one first metallic layer is bonded with the at least one second metallic layer such that the first substrate and the second substrate constitute a single die.

Abstract: A through-silicon via (TSV) enabled twisted pair is provided. A pair of complementary conductive lines is provided as a twisted pair. Each of the conductive lines of the twisted pair is formed by alternating conductive sections on opposing sides of a substrate. The alternating conductive sections are electrically coupled by at least in part a TSV. The conductive lines overlap or are entwined such the point at which the conductive lines cross, the conductive lines are on opposing sides of the substrate. The conductive lines are weaved in this manner for the length of the conductive trace.

Abstract: SiP design systems and methods. The system comprises a system partitioning module, a subsystem integration module, a physical design module, and an analysis module. The system partitioning module partitions a target system into subsystem partitions according to partition criteria. The subsystem integration module generates an architecture design and/or a cost estimation for the target system according to the subsystem partitions, at least one SiP platform, and IC geometry data. The physical design module generates a SiP physical design with physical routing for the target system according to the architecture design, the subsystem partitions, the SiP platform, and the IC geometry data. The analysis module performs a performance check within the subsystem partitions based on the SiP physical design and/or simulations of the target system.

Abstract: A stacked structure includes a first die coupled to a first substrate and having a first conductive structure formed through the first die. A second die is mounted over the first die. The second die is coupled to the first substrate by the first conductive structure. At least one first support structure formed from a second substrate is provided over the first substrate, adjacent to at least one of the first die and the second die. A top surface of the first support structure is substantially coplanar with a top surface of at least one of the first and second dies adjacent to the first support structure. The stacked structure further includes a heat spreader mounted over the second die.

Abstract: A semiconductor structure includes a first semiconductor die and a second semiconductor die identical to the first semiconductor die. The first semiconductor die includes a first identification circuit; and a first plurality of input/output (I/O) pads on the surface of the first semiconductor die. The second semiconductor die includes a second identification circuit, wherein the first and the second identification circuits are programmed differently from each other; and a second plurality of I/O pads on the surface of the second semiconductor die. Each of the first plurality of I/O pads is vertically aligned to and connected to one of the respective second plurality of I/O pads. The second semiconductor die is vertically aligned to and bonded on the first semiconductor die.

Abstract: Various structures of a programmable semiconductor interposer for electronic packaging are described. An array of semiconductor devices having various values is formed in said interposer. A user can program said interposer and form a “virtual” device having a desired value by selectively connecting various one of the array of devices to contact pads formed on the surface of said interposer. An inventive electronic package structure includes a standard interposer having an array of unconnected devices of various values and a device selection unit, which selectively connects various one of the array of devices in said standard interposer to an integrated circuit die encapsulated in said electronic package. Methods of forming said programmable semiconductor interposer and said electronic package are also illustrated.

Abstract: SiP design systems and methods. The system comprises a system partitioning module, a subsystem integration module, a physical design module, and an analysis module. The system partitioning module partitions a target system into subsystem partitions according to partition criteria. The subsystem integration module generates an architecture design and/or a cost estimation for the target system according to the subsystem partitions, at least one SiP platform, and IC geometry data. The physical design module generates a SiP physical design with physical routing for the target system according to the architecture design, the subsystem partitions, the SiP platform, and the IC geometry data. The analysis module performs a performance check within the subsystem partitions based on the SiP physical design and/or simulations of the target system.

Abstract: A method for forming a single die includes forming at least one first active device over a first substrate and at least one first metallic layer coupled to the first active device. At least one second metallic layer is formed over a second substrate, wherein the second substrate does not include any active device The at least one fist metallic layer is bonded with the at least one second metallic layer such that the first substrate and the second substrate constitute a single die.

Abstract: An isolation structure for electromagnetic interference includes a semiconductor substrate, a first integrated circuit in the semiconductor substrate, a second integrated circuit in the semiconductor substrate, and an isolation structure in a direct path between the first and the second integrated circuits, wherein the isolation structure comprises a through-silicon via.

Abstract: A semiconductor structure includes a first semiconductor die and a second semiconductor die identical to the first semiconductor die. The first semiconductor die includes a first identification circuit; and a first plurality of input/output (I/O) pads on the surface of the first semiconductor die. The second semiconductor die includes a second identification circuit, wherein the first and the second identification circuits are programmed differently from each other; and a second plurality of I/O pads on the surface of the second semiconductor die. Each of the first plurality of I/O pads is vertically aligned to and connected to one of the respective second plurality of I/O pads. The second semiconductor die is vertically aligned to and bonded on the first semiconductor die.