Abstract: A device, a system and a method for bonding two substrates. A first substrate holder has a recess and an elevation.

Abstract: A method for surface treatment of an at least primarily crystalline substrate surface of a substrate such that by amorphization of the substrate surface, an amorphous layer is formed at the substrate surface with a thickness d>0 nm of the amorphous layer. This invention also relates to a corresponding device for surface treatment of substrates.

Abstract: A method for bonding a contact surface of a first substrate to a contact surface of a second substrate comprising of the steps of: positioning the first substrate on a first receiving surface of a first receiving apparatus and positioning the second substrate on a second receiving surface of a second receiving apparatus; establishing contact of the contact surfaces at a bond initiation site; and bonding the first substrate to the second substrate along a bonding wave which is travelling from the bond initiation site to the side edges of the substrates, wherein the first substrate and/or the second substrate is/are deformed for alignment of the contact surfaces.

Abstract: A method and device for bonding chips onto a substrate or onto further chips. The chips are bonded onto the substrate or the further chips by means of a direct bond.

Abstract: A receiving means for receiving and mounting of wafers, comprised of a mounting surface, mounting means for mounting a wafer onto the mounting surface and compensation means for active, locally controllable, compensation of local and/or global distortions of the wafer.

Abstract: A method for bonding a contact surface of a first substrate to a contact surface of a second substrate comprising of the steps of: positioning the first substrate on a first receiving surface of a first receiving apparatus and positioning the second substrate on a second receiving surface of a second receiving apparatus; establishing contact of the contact surfaces at a bond initiation site; and bonding the first substrate to the second substrate along a bonding wave which is travelling from the bond initiation site to the side edges of the substrates, wherein the first substrate and/or the second substrate is/are deformed for alignment of the contact surfaces.

Abstract: A method and device for injection moulding, in particular for micro-injection moulding, at least comprising a mould with a first mould half and a second mould half, wherein the first mould half and the second mould half define an injection moulding space in the closed state of the mould, and an insert arranged in the injection moulding space.

Abstract: A device, a system and a method for bonding two substrates. A first substrate holder has a recess and an elevation.

Abstract: A device, a system and a method for bonding two substrates. A first substrate holder has a recess and an elevation.

Abstract: The invention relates to a method for measuring a multilayered substrate (1, 1?, 1?), particularly with at least one structure (7, 7?, 7?, 7??, 7IV, 7V) with critical dimensions, particularly with a surface structure (7, 7?, 7?, 7??, 7IV, 7V) with critical dimensions, characterized in that the method has at least the following steps, particularly the following procedure: producing (110) the substrate (1, 1?, 1?) with a plurality of layers (2, 3, 4, 5, 6, 6?, 6?), particularly with a structure (7, 7?, 7?, 7??, 7IV, 7V), particularly with a structure (7, 7?, 7?, 7??, 7IV, 7V) on a surface (6o, 6?o, 6?o) of an uppermost layer (6, 6?, 6?), wherein the dimensions of the layers and in particular the structures are known, measuring (120) the substrate (1, 1?, 1?), and in particular the structure (7, 7?, 7?, 7??, 71IV, 7V)) using at least one measuring technology, creating (130) a simulation of the substrate using the measurement results from the measurement of the substrate (1, 1?, 1?), comparing (140) the measureme

Abstract: A receiving means for receiving and mounting of wafers, comprised of a mounting surface, mounting means for mounting a wafer onto the mounting surface and compensation means for active, locally controllable, compensation of local and/or global distortions of the wafer.

Abstract: A method for surface treatment of an at least primarily crystalline substrate surface of a substrate such that by amorphization of the substrate surface, an amorphous layer is formed at the substrate surface with a thickness d>0 nm of the amorphous layer. This invention also relates to a corresponding device for surface treatment of substrates.

Abstract: A receiving means for receiving and mounting of wafers, comprised of a mounting surface, mounting means for mounting a wafer onto the mounting surface and compensation means for active, locally controllable, compensation of local and/or global distortions of the wafer.

Abstract: A method for surface treatment of an at least primarily crystalline substrate surface of a substrate such that by amorphization of the substrate surface, an amorphous layer is formed at the substrate surface with a thickness d>0 nm of the amorphous layer. This invention also relates to a corresponding device for surface treatment of substrates.

Abstract: A process for the production of a permanent, electrically conductive connection between a first metal surface of a first substrate and a second metal surface of a second substrate, wherein a permanent, electrically conductive connection is produced, at least primarily, by substitution diffusion between metal ions and/or metal atoms of the two metal surfaces.

Abstract: A device, a system and a method for bonding two substrates. A first substrate holder has a recess and an elevation.

Abstract: A process for the production of a permanent, electrically conductive connection between a first metal surface of a first substrate and a second metal surface of a second substrate, wherein a permanent, electrically conductive connection is produced, at least primarily, by substitution diffusion between metal ions and/or metal atoms of the two metal surfaces.

Abstract: A device, a system and a method for bonding two substrates. A first substrate holder has a recess and an elevation.

Abstract: A device and method is described for producing an electrically conductive direct bond between a bonding side of a first substrate and a bonding side of a second substrate. A workspace is included that can be closed, gas-tight, against the environment and can be supplied with a vacuum. The workspace includes a) at least one plasma chamber for modifying at least one of the bonding sides and at least one bonding chamber for bonding the bonding sides, and/or b) at least one combined bonding/plasma chamber for modifying at least one of the bonding sides and for bonding the bonding sides.

Abstract: A method for bonding a contact surface of a first substrate to a contact surface of a second substrate comprising of the steps of: positioning the first substrate on a first receiving surface of a first receiving apparatus and positioning the second substrate on a second receiving surface of a second receiving apparatus; establishing contact of the contact surfaces at a bond initiation site; and bonding the first substrate to the second substrate along a bonding wave which is travelling from the bond initiation site to the side edges of the substrates, wherein the first substrate and/or the second substrate is/are deformed for alignment of the contact surfaces.