Abstract: A process for the production of a permanent, electrically conductive connection between a first metal surface of a first substrate and a second metal surface of a second substrate, wherein a permanent, electrically conductive connection is produced, at least primarily, by substitution diffusion between metal ions and/or metal atoms of the two metal surfaces.

Abstract: A process for the production of a permanent, electrically conductive connection between a first metal surface of a first substrate and a second metal surface of a second substrate, wherein a permanent, electrically conductive connection is produced, at least primarily, by substitution diffusion between metal ions and/or metal atoms of the two metal surfaces.

Abstract: A device and method for producing an electrically conductive direct bond between a bonding side of a first substrate and a bonding side of a second substrate with the following features: a workspace that can be closed, gas-tight, against the environment and can be supplied with a vacuum, the workspace comprises: a) at least one plasma chamber for modifying at least one of the bonding sides and at least one bonding chamber for bonding the bonding sides, and/or b) at least one combined bonding/plasma chamber for modifying at least one of the bonding sides and for bonding the bonding sides.

Abstract: A method for applying a bonding layer that is comprised of a basic layer and a protective layer on a substrate with the following method steps: application of an oxidizable basic material as a basic layer on a bonding side of the substrate, at least partial covering of the basic layer with a protective material that is at least partially dissolvable in the basic material as a protective layer. In addition, the invention relates to a corresponding substrate.

Abstract: A method for measuring and/or acquiring layer thicknesses and voids of one or more layers of a temporary bonded wafer stack on a plurality of measuring points is provided. A sequence of the method includes an arrangement of a measurement means for measuring and/or acquiring the layer thicknesses and voids of the layers of the wafer stack at the measuring points relative to a flat side of the wafer stack. The sequence further includes an emission of signals in the form of electromagnetic waves by a transmitter of the measurement means, and a receiving the signals which have been reflected by the wafer stack by a receiver of the measurement means. The sequence also includes an evaluation of the signals which have been received by the receiver by an evaluation unit.

Abstract: A method for coating of a first substrate with a first diffusion bond layer by deposition of a first material which forms the first diffusion bond layer on a first surface of the first substrate such that the first diffusion bond layer forms a grain surface with an average grain diameter H parallel to the first surface smaller than 1 ?m. The invention further relates to a method for bonding of a first substrate which has been coated as described above to a second substrate which has a second diffusion bond layer, the method of the bonding comprising the following steps: bring a first diffusion bond layer of a first substrate into contact with a second diffusion bond layer of a second substrate, pressing the substrates together to form a permanent metal diffusion bond between the first and second substrates.

Abstract: A method for treatment of a product wafer temporarily bonded on a carrier wafer with the following steps: grinding and/or backthinning of the product wafer on one flat side facing away from the carrier wafer to a product wafer thickness D of <150 ?m, especially <100 ?m, preferably <75 ?m, even more preferably <50 ?m, especially preferably <30 ?m, surface treatment of the flat side with means for reducing an especially structural intrinsic stress of the product wafer.

Abstract: A method for microcontact embossing of a structure by transferring an embossing material onto a target surface of a substrate by means of an embossing surface of a structural die. The embossing material is comprised at least predominantly of silane or at least predominantly of at least one silane derivative and in that the structural die is a soft die. A corresponding method is provided in which the embossing material is a molecular component that is comprised at least predominantly of organic molecules.

Abstract: A method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate according to the following steps: forming a reservoir in a surface layer on the first contact surface, at least partially filling the reservoir with a first educt or a first group of educts, contacting the first contact surface with the second contact surface for formation of a prebond connection, and forming a permanent bond between the first and second contact surface, at least partially strengthened by the reaction of the first educt with a second educt contained in a reaction layer of the second substrate.

Abstract: A receiving means for receiving and mounting of wafers. The receiving means includes a mounting surface. A mounting means is provided for mounting a wafer on the mounting surface. A compensation means is provided for active, especially locally controllable, at least partial compensation of local and/or global distortions of the wafer.

Abstract: This invention relates to a pressure transmission apparatus for bonding a plurality of chips to a substrate. The pressure transmission apparatus includes a pressure body for applying a bonding force which acts in the bonding direction (B) to the chip. The pressure body has a first pressure side and an opposite second pressure side, both oriented to be transverse to the bonding direction (B). Fixing means are provided to attach to the periphery of the pressure transmission apparatus for fixing of the pressure transmission apparatus on a retaining body in the bonding direction (B). A sliding layer is provided for sliding motion of the pressure body transversely to the bonding direction (B).

Abstract: A method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate according to the following steps: forming a reservoir in a surface layer on the first contact surface, at least partially filling the reservoir with a first educt or a first group of educts, contacting the first contact surface with the second contact surface for formation of a prebond connection, and forming a permanent bond between the first and second contact surface, at least partially strengthened by the reaction of the first educt with a second educt contained in a reaction layer of the second substrate.

Abstract: A method for tacking of chips onto a substrate at chip positions which are distributed on a surface of the substrate. The method includes the following steps: formation or application of a function layer onto the substrate, removing the function layer from the substrate at the chip positions at least in the region of contacts to uncover the contacts, tacking chips onto one chip contact side of the function layer at the chip positions and contacting the chips with the contacts via contact elements.

Abstract: A method for producing a product wafer having chips thereon, comprising the steps of: processing the first side of the product wafer bonding the product wafer with its first side onto a first rigid carrier wafer with a first intermediate layer consisting of one first adhesion layer applied at least on the edge side, processing a second side of the product wafer, bonding of the product wafer with its second side on a second rigid carrier wafer with a second intermediate layer consisting of one second adhesion layer applied at least on the edge side, characterized in that the first intermediate layer and the second intermediate layer are made different such that the first carrier wafer can be separated selectively before the second carrier wafer.

Abstract: This invention relates to a pressure transmission apparatus for bonding a plurality of chips to a substrate. The pressure transmission apparatus includes a pressure body for applying a bonding force which acts in the bonding direction (B) to the chip. The pressure body has a first pressure side and an opposite second pressure side, both oriented to be transverse to the bonding direction (B). Fixing means are provided to attach to the periphery of the pressure transmission apparatus for fixing of the pressure transmission apparatus on a retaining body in the bonding direction (B). A sliding layer is provided for sliding motion of the pressure body transversely to the bonding direction (B).

Abstract: A method for microcontact embossing of a structure by transferring an embossing material onto a target surface of a substrate by means of an embossing surface of a structural die. The embossing material is comprised at least predominantly of silane or at least predominantly of at least one silane derivative and in that the structural die is a soft die. A corresponding method is provided in which the embossing material is a molecular component that is comprised at least predominantly of organic molecules.

Abstract: A method and a device for producing a lens wafer which has a plurality of microlenses, as well as microlenses produced from the lens wafer.

Abstract: This invention relates to a method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate, the second substrate having at least one reaction layer, with the following steps, especially the following sequence: forming a reservoir in a reservoir formation layer on the first contact surface, at least partial filling of the reservoir with a first educt or a first group of educts, the first contact surface making contact with the second contact surface for formation of a prebond connection, thinning of the second substrate and forming a permanent bond between the first and second contact surface, at least partially strengthened by the reaction of the first educt with the second educt contained in the reaction layer of the second substrate.

Abstract: Device for separating a substrate from a carrier substrate which is connected to the substrate by an interconnect layer. The device includes a carrier substrate holder with a holding surface for holding the carrier substrate. A substrate holder is located opposite the carrier substrate holder. The substrate holder has a substrate holding surface which can be located parallel to the holding surface of the carrier substrate holder. A separating means is provided for parallel displacement of the substrate relative to the carrier substrate in the interconnected state of the substrate and carrier substrate.

Abstract: A method for embossing a structure material on a substrate disposed within a device having side walls, a base plate and a cover that define a working space that is isolated from a surrounding environment. The method includes the steps of: a) moving the substrate using a first calibration means and aligning the substrate with an application means, b) applying the structure material to the substrate, c) moving the substrate using a second calibration means that is located at least partially in the working space wherein the substrate is disposed within the working space and is aligned with an embossing means that is located at least partially in the working space, and d) embossing the structure material on the substrate while the substrate is in the working space using the embossing means, wherein the working space has a defined atmosphere, before and during the step of embossing, without interruption.