Patents by Inventor Martin Ritter
Martin Ritter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210094972Abstract: The invention provides new heterocyclic compounds having the general formulae (Ia) and (Ib) wherein A, B, and L are as described herein, compositions including the compounds, processes of manufacturing the compounds and methods of using the compounds.Type: ApplicationFiled: September 22, 2020Publication date: April 1, 2021Applicant: Hoffmann-La Roche Inc.Inventors: Joerg BENZ, Luca GOBBI, Uwe GRETHER, Benoit HORNSPERGER, Carsten KROLL, Bernd KUHN, Rainer E. MARTIN, Fionn O`HARA, Bernd PUELLMANN, Hans RICHTER, Martin RITTER
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Publication number: 20210094973Abstract: The invention provides new heterocyclic compounds having the general formula (I) wherein A, L1, X, m, n and R1 to R4 are as described herein, compositions including the compounds, processes of manufacturing the compounds and methods of using the compounds.Type: ApplicationFiled: September 22, 2020Publication date: April 1, 2021Applicant: Hoffmann-La Roche Inc.Inventors: Luca GOBBI, Uwe GRETHER, Katrin GROEBKE ZBINDEN, Benoit HORNSPERGER, Carsten KROLL, Bernd KUHN, Marius Daniel Rinaldo LUTZ, Fionn O'HARA, Hans RICHTER, Martin RITTER
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Patent number: 10957685Abstract: A semiconductor device and method of manufacturing a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a semiconductor layer located on the substrate; at least one shallow trench and at least one deep trench. Each of the at least one shallow trench and the at least one deep trench extending from a first major surface of the semiconductor layer. Sidewall regions and base regions of the trenches comprise a doped trench region and the trenches are at least partially filled with a conductive material contacting the doped region. The shallow trenches terminate in the semiconductor layer and the deep trench terminates in the semiconductor substrate.Type: GrantFiled: October 18, 2018Date of Patent: March 23, 2021Assignee: Nexperia B.V.Inventors: Steffen Holland, Zhihao Pan, Jochen Wynants, Hans-Martin Ritter, Tobias Sprogies, Thomas Igel-Holtzendorff, Wolfgang Schnitt, Joachim Utzig
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Publication number: 20200308190Abstract: The invention provides new heterocyclic compounds having the general formula wherein A, L, X, m, n, R1 and R2 are as described herein, compositions including the compounds, processes of manufacturing the compounds and methods of using the compounds.Type: ApplicationFiled: April 9, 2020Publication date: October 1, 2020Applicant: Hoffmann-La Roche Inc.Inventors: Charles BELL, Joerg BENZ, Luca GOBBI, Uwe GRETHER, Katrin GROEBKE ZBINDEN, Benoit HORNSPERGER, Buelent KOCER, Carsten KROLL, Bernd KUHN, Marius Daniel Rinaldo LUTZ, Fionn O'HARA, Hans RICHTER, Martin RITTER, Didier ROMBACH, Martin KURATLI
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Publication number: 20200299277Abstract: The invention provides new heterocyclic compounds having the general Formula (I), or a pharmaceutically acceptable salt thereof, wherein R1, R2, X, Y1 and Y2 are as described herein, compositions including the compounds, processes of manufacturing the compounds and methods of using the compounds.Type: ApplicationFiled: March 23, 2020Publication date: September 24, 2020Applicant: Hoffmann-La Roche Inc.Inventors: Joerg BENZ, Uwe GRETHER, Benoit HORNSPERGER, Bernd KUHN, Hans RICHTER, Buelent KOCER, Fionn O'HARA, Martin RITTER, Satoshi TSUCHIYA, Ludovic COLLIN, Simon E. JOHNSON, Charles BELL
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Publication number: 20200188691Abstract: A novel treatment method is disclosed, wherein a patch configured to be placed on a patient's skin is activated, before placement, to deliver localized radiotherapy to a diseased area of the skin. The disclosed devices and methods minimize or prevent collateral damage to the neighboring tissues. In most cases, the disclosed devices and methods include coating a contoured, solid, flexible or conformal substrate with one or more lanthanide elements and then activating (e.g. neutron irradiation) the elements such that its resulting radioisotope emits beta-particles into the diseased skin surface when applied to the patient's skin. Novel processes are described for fabricating and irradiating the lanthanide-based skin patch, for example a holmium-based skin patch.Type: ApplicationFiled: October 18, 2019Publication date: June 18, 2020Inventors: Frédéric Sarazin, Jeramy Zimmerman, Rachel Morneau, Martin Ritter
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Patent number: 10643941Abstract: A semiconductor device and a method of making the same. The device includes a semiconductor substrate provided in a chip-scale package (CSP). The device also includes a plurality of contacts provided on a major surface of the substrate. The device further includes an electrically floating metal layer forming an ohmic contact on a backside of the semiconductor substrate. The device is operable to conduct a current that passes through the substrate from a first of said plurality of contacts to a second of said plurality of contacts via the metal layer on the backside.Type: GrantFiled: January 5, 2016Date of Patent: May 5, 2020Assignee: Nexperia B.V.Inventors: Zhihao Pan, Friedrich Hahn, Steffen Holland, Olaf Pfennigstorf, Jochen Wynants, Hans-Martin Ritter
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Patent number: 10618897Abstract: The present invention relates to compounds of formula (I): or pharmaceutically acceptable salts thereof, as well as processes for their manufacture, pharmaceutical compositions comprising them, and their use as medicaments.Type: GrantFiled: August 7, 2018Date of Patent: April 14, 2020Assignee: Hoffmann-La Roche Inc.Inventors: Bernd Buettelmann, Buelent Kocer, Bernd Kuhn, Marco Prunotto, Hans Richter, Martin Ritter
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Patent number: 10573637Abstract: Various aspects of the disclosure are directed to circuitry that may be used to shunt current. As may be consistent with one or more embodiments a first circuit has a plurality of alternating p-type and n-type semiconductor regions with respective p-n junctions therebetween, arranged between an anode end and a cathode end. A second (e.g., bypass) circuit is connected to one of the alternating p-type and n-type semiconductor regions, and forms a further p-n junction therewith. The second circuit operates to provide carrier flow, which influences operation of the first circuit.Type: GrantFiled: November 21, 2016Date of Patent: February 25, 2020Assignee: Nexperia B.V.Inventors: Steffen Holland, Hans-Martin Ritter
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Patent number: 10546816Abstract: A semiconductor device and a method of making the same. The device includes a substrate comprising a major surface and a backside. The device also includes a dielectric partition for electrically isolating a first part of the substrate from a second part of the substrate. The dielectric partition extends through the substrate from the major surface to the backside.Type: GrantFiled: November 18, 2016Date of Patent: January 28, 2020Assignee: Nexperia B.V.Inventors: Hans-Martin Ritter, Joachim Utzig, Frank Burmeister, Godfried Henricus Josephus Notermans, Jochen Wynants, Rainer Mintzlaff
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Patent number: 10489378Abstract: Disclosed herein are system, method, and computer program product embodiments for the detection and resolution of conflicts in data synchronization. An embodiment operates by receiving an upload from a user device of one or more changes to a local copy of a master document. A conflict is identified between the one or more uploaded changes and one or more previous changes to the master document. A super user is notified of the conflict. A resolution of the conflict is received. The resolution to resolve the conflict is applied.Type: GrantFiled: December 8, 2015Date of Patent: November 26, 2019Assignee: SAP SEInventor: Gerd Martin Ritter
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Patent number: 10437788Abstract: Disclosed herein are system, method, and computer program product embodiments for the automatic detection, retry, and resolution of errors in data synchronization. An embodiment operates by receiving one or more changes to a local copy of a master document. An error is detected during a synchronization of the one or more changes with the master document. A count is incremented and the synchronization is retried until either the synchronization completes or a threshold has been reached.Type: GrantFiled: December 8, 2015Date of Patent: October 8, 2019Assignee: SAP SEInventor: Gerd Martin Ritter
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Patent number: 10435407Abstract: The present invention relates to compounds of formula (I): or pharmaceutically acceptable salts thereof, wherein L and R1 to R5 are as described herein, as well as processes for their manufacture, pharmaceutical compositions comprising them, and their use as medicaments.Type: GrantFiled: February 4, 2019Date of Patent: October 8, 2019Assignee: Hoffmann-La Roche Inc.Inventors: Bernd Buettelmann, Buelent Kocer, Bernd Kuhn, Marco Prunotto, Hans Richter, Martin Ritter, Markus Rudolph, Alexander Lee Satz
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Publication number: 20190251096Abstract: An enterprise system which facilitates synchronization of offline data. Offline data created during an offline session or sessions (collectively an offline session) prior to synchronization is assigned a temporary key. Changes of offline data created during an offline session is assigned the temporary key of the data to which the change is associated. The temporary key is mapped to a new created backend key and stored in a mapping table. Using the mapping table, temporary keys associated with the changes are swapped with backend keys which the temporary keys are mapped. This maintains data persistency of newly created and change data during an offline session.Type: ApplicationFiled: April 23, 2019Publication date: August 15, 2019Inventors: Gerd Martin Ritter, Pradeep Kumar Singh, Tim Kornmann, Rene Gross
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Publication number: 20190252409Abstract: A semiconductor device structure and method of manufacturing a semiconductor device is provided. The method includes providing a first semiconductor substrate having a first major surface and an opposing second major surface, the first major surface having a first metal layer formed thereon; providing a second semiconductor substrate having a first major surface and an opposing second major surface, with the second semiconductor substrate including a plurality of active device regions formed therein and a second metal layer formed on the first major surface connecting each of the plurality of active device regions; bonding the first metal layer of the first semiconductor substrate to the second metal layer of the second semiconductor substrate; and forming device contacts on the second major surface of the second semiconductor substrate for electrical connection to each of the plurality of active device regions.Type: ApplicationFiled: February 11, 2019Publication date: August 15, 2019Applicant: NEXPERIA B.V.Inventors: Hans-Martin RITTER, Frank BURMEISTER
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Publication number: 20190229109Abstract: A semiconductor device arrangement and a method of operating a semiconductor device arrangement. The semiconductor device can be arranged for bidirectional operation. The semiconductor device arrangement can comprise: a field effect transistor comprising first and second input terminals; a control terminal; a first diode connected between the first terminal and the control terminal; and a second diode connected between the second terminal and the control terminal; wherein the first terminal and the second terminal are configured and arranged to be connected to respective signal lines.Type: ApplicationFiled: January 22, 2019Publication date: July 25, 2019Applicant: NEXPERIA B.V.Inventors: Hans-Martin RITTER, Andreas ZIMMERMAN
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Publication number: 20190169189Abstract: The present invention relates to compounds of formula (I): or pharmaceutically acceptable salts thereof, wherein L and R1 to R5 are as described herein, as well as processes for their manufacture, pharmaceutical compositions comprising them, and their use as medicaments.Type: ApplicationFiled: February 4, 2019Publication date: June 6, 2019Applicant: Hoffmann-La Roche Inc.Inventors: BERND BUETTELMANN, BUELENT KOCER, BERND KUHN, MARCO PRUNOTTO, HANS RICHTER, MARTIN RITTER, MARKUS RUDOLPH, ALEXANDER LEE SATZ
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Patent number: 10311082Abstract: An enterprise system which facilitates synchronization of offline data. Offline data created during an offline session or sessions (collectively an offline session) prior to synchronization is assigned a temporary key. Changes of offline data created during an offline session is assigned the temporary key of the data to which the change is associated. The temporary key is mapped to a new created backend key and stored in a mapping table. Using the mapping table, temporary keys associated with the changes are swapped with backend keys which the temporary keys are mapped. This maintains data persistency of newly created and change data during an offline session.Type: GrantFiled: December 21, 2015Date of Patent: June 4, 2019Assignee: SAP SEInventors: Gerd Martin Ritter, Pradeep Kumar Singh, Tim Kornmann, Rene Gross
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Publication number: 20190123037Abstract: A semiconductor device and method of manufacturing a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a semiconductor layer located on the substrate; at least one shallow trench and at least one deep trench. Each of the at least one shallow trench and the at least one deep trench extending from a first major surface of the semiconductor layer. Sidewall regions and base regions of the trenches comprise a doped trench region and the trenches are at least partially filled with a conductive material contacting the doped region. The shallow trenches terminate in the semiconductor layer and the deep trench terminates in the semiconductor substrate.Type: ApplicationFiled: October 18, 2018Publication date: April 25, 2019Applicant: NEXPERIA B.V.Inventors: Steffen Holland, Zhihao Pan, Jochen Wynants, Hans-Martin Ritter, Tobias Sprogies, Thomas lgel-Holtzendorff, Wolfgang Schnitt, Joachim Utzig
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Patent number: 10239876Abstract: The present invention relates to compounds of formula (I): or pharmaceutically acceptable salts thereof, wherein L and R1 to R5 are as described herein, as well as processes for their manufacture, pharmaceutical compositions comprising them, and their use as medicaments.Type: GrantFiled: December 21, 2017Date of Patent: March 26, 2019Assignee: Hoffman La-Roche Inc.Inventors: Bernd Buettelmann, Buelent Kocer, Bernd Kuhn, Marco Prunotto, Hans Richter, Martin Ritter, Markus Rudolph, Alexander Lee Satz