Abstract: The present disclosure relates to an electrostatic discharge (ESD) protection device. The electrostatic discharge protection device, may comprise: a semiconductor controlled rectifier; and a p-n diode. The semiconductor controlled rectifier and the diode may be integrally disposed laterally at a major surface of a semiconductor substrate; and a current path for the semiconductor controlled rectifier may be separate from a current path for the diode.

Abstract: Circuit protection is provided. In accordance with one or more example embodiments, a thyristor-based circuit and a diode-based circuit are connected in series between an internal circuit terminal and reference terminal, for protecting the internal circuit terminal against circuit stresses such as overvoltage and/or overcurrent, as may be associated with electrostatic discharge. The thyristor and diode-based circuits operate in a first mode at which leakage current is limited by the thyristor, and in a second (protection) mode in which a voltage at the internal terminal exceeds a threshold level at which the thyristor-based circuit operates in a forward-biased mode and the diode operates in a breakdown mode, for shunting current between the internal circuit terminal and reference terminal.

Abstract: A semiconductor device (300a) comprising: a substrate (302) having a first surface (303); an n-type well (304) extending from the first surface (303) into the substrate (302) and configured to form a depletion region (306) in the substrate (302) around the n-type well (304); an insulating layer (340) extending over the first surface (303) of the substrate (302) from the n-type well (304), the insulating layer (340) configured to form an inversion layer (342) in the substrate (302) extending from the n-type well (304) adjacent to the first surface (303); wherein a p-type floating channel stopper (370a) is provided, configured to extend through the inversion layer (342) to reduce electrical coupling between the n-type well (304) and at least part of the inversion layer (342), and is electrically disconnected from a remainder of the substrate (320) outside of the depletion region (306).

Abstract: Parasitic thyristor action may be mitigated in semiconductor devices by placement of minority carrier traps, illustratively in the base(s) of bipolar transistors or the well of a CMOS transistor pair. The minority carrier traps include adjacent n and p regions which may be connected by a conductor.

Abstract: A computer-implemented system may include an application platform comprising a platform model of a plurality of business objects, each of the business objects comprising a model of data and associated logic, and a public solution model comprising a subset of the platform model. The system may also include a business application, wherein a data model and access logic of the business application are defined based on the public solution model, and wherein the application platform is to provide services to the business application based on the data model, the access logic and the platform model.

Abstract: Devices, methods, and programmed instructions useful for transferring an end of an existing call session from a wireless handheld telephony device to a second device, such as a desk phone. The second device provides information useful for transferring the call directly to the handheld device on which the call session is established.

Abstract: An apparatus, and an associated method, reconnects a communication party, such as a wireless device, into a call connection responsive to detection of a call connection drop of an ongoing communication session. A detector detects a call connection drop of an ongoing communication session. And, responsive to the detection, the connection is automatically reinitiated.

Abstract: An ESD protection circuit comprises a series connection of at least two protection components between a signal line to be protected and a return line (e.g. ground), comprising a first protection component connected to the signal line and a second protection component connected to the ground line. They are connected with opposite polarity so that when one conducts in forward direction the other conducts in reverse breakdown mode. A bias voltage source connects to the junction between the two protection components through a bias impedance. The use of the bias voltage enables the signal distortions resulting from the ESD protection circuit to be reduced.

Abstract: A computer-implemented system may include reception of a user interface request corresponding to two or more chained operations associated with one or more service calls to a backend service layer, determination of whether to update a backend buffer after execution of each of the one or more service calls, execution, if it is determined to update the backend buffer after execution of each of the one or more service calls, of each of the one or more service calls, and a read service call after execution of each of the one or more service calls, and execution, if it is determined not to update the backend buffer after execution of each of the one or more service calls, of each of the one or more service calls in sequence, and a bulk read service call only after execution of all of the one or more service calls.

Abstract: An integrated circuit device provides electrostatic discharge (ESD) protection. In connection with various example embodiments, an ESD protection circuit includes a diode-type circuit having a p-n junction that exhibits a low breakdown voltage. Connected in series with the diode between an internal node susceptible to an ESD pulse and ground, are regions of opposite polarity having junctions therebetween for mitigating the passage of leakage current via voltage sharing with the diode's junction. Upon reaching the breakdown voltage, the diode shunts current to ground via another substrate region, bypassing one or more junctions of the regions of opposite polarity and facilitating a low clamping voltage.

Abstract: Circuit protection is provided. In accordance with one or more example embodiments, a thyristor-based circuit and a diode-based circuit are connected in series between an internal circuit terminal and reference terminal, for protecting the internal circuit terminal against circuit stresses such as overvoltage and/or overcurrent, as may be associated with electrostatic discharge. The thyristor and diode-based circuits operate in a first mode at which leakage current is limited by the thyristor, and in a second (protection) mode in which a voltage at the internal terminal exceeds a threshold level at which the thyristor-based circuit operates in a forward-biased mode and the diode operates in a breakdown mode, for shunting current between the internal circuit terminal and reference terminal.

Abstract: A computer-implemented system may include a data store to store business data, an application platform, and a business application. The application platform may include a repository to store metadata defining a plurality of business objects, each of the business objects comprising a respective model of data and associated logic, each business object associated with respective business object entities, and a framework in communication with the repository to provide access to the business data. The business application is to access the data via the framework and based on the metadata, wherein the metadata associates a first plurality of the business object entities with a RELEASED release status code, and wherein the metadata associates a second plurality of the business object entities with a DEPRECATED release status code.

Abstract: An apparatus, and an associated method, reconnects a communication party, such as a wireless device, into a call connection responsive to detection of a call connection drop of an ongoing communication session. A detector detects a call connection drop of an ongoing communication session. And, responsive to the detection, the connection is automatically reinitiated.

Abstract: A computer-implemented system may include reception of a user interface request corresponding to two or more chained operations associated with one or more service calls to a backend service layer, determination of whether to update a backend buffer after execution of each of the one or more service calls, execution, if it is determined to update the backend buffer after execution of each of the one or more service calls, of each of the one or more service calls, and a read service call after execution of each of the one or more service calls, and execution, if it is determined not to update the backend buffer after execution of each of the one or more service calls, of each of the one or more service calls in sequence, and a bulk read service call only after execution of all of the one or more service calls.

Abstract: Various embodiments relate to a light emitting diode protection circuit, including: a plurality of diodes connected in series; an input connected to a first diode of the plurality of diodes; an output; a first resistor connected between the plurality of diodes and the output; a transistor with a gate connected to a junction between the first resistor and the plurality of diodes and a source connected to the output; a second resistor connected between the input and drain of the transistor; and a silicon controlled rectifier (SCR) with an anode connected to the input, a base connected to the drain of the transistor, and a cathode connected to the output.

Abstract: The present invention relates to a discharge structure for an overvoltage and/or overcurrent protection, in particular to a discharge structure for an electrostatic discharge (ESD) protection, for an integrated circuit (IC), and to an ESD protection device for an IC comprising such a discharge structure and to a method for making such a structure. The present invention particularly relates to such a discharge structure (50, 52) which comprises at least two discharge paths (40, 80) provided to conduct a current to a terminal (60), whereas substantially all of the discharge paths (40, 80) present substantially the same resistance for the current.

Abstract: An integrated circuit device provides electrostatic discharge (ESD) protection. In connection with various example embodiments, an ESD protection circuit includes a diode-type circuit having a p-n junction that exhibits a low breakdown voltage. Connected in series with the diode between an internal node susceptible to an ESD pulse and ground, are regions of opposite polarity having junctions therebetween for mitigating the passage of leakage current via voltage sharing with the diode's junction. Upon reaching the breakdown voltage, the diode shunts current to ground via another substrate region, bypassing one or more junctions of the regions of opposite polarity and facilitating a low clamping voltage.

Abstract: An integrated circuit device provides electrostatic discharge (ESD) protection. In connection with various example embodiments, an ESD circuit includes a low voltage clamp circuit configured to discharge current during an ESD event in response to a voltage level presented thereto, and is coupled across an internal node (e.g., a floating circuit node or a voltage supply (VDD)) and ground, in parallel with an input node having a diode between the input node and each of the internal node and ground. The clamp circuit includes a silicon-controlled rectifier (SCR) including a thyristor having anode and cathode end regions separated by two base regions, the cathode being connected to the internal node and the anode being connected to ground.

Abstract: The present invention relates to an electrical connector for a first IC, comprising a second IC (12) carrying ESD protection, the second IC (12) being integrated into the connector (8), which enhances the ESD protection and preserves the RF performance of such connector (8). The present invention further relates to a method for making an electrical connector (8) for a first IC, comprising this step of providing ESD protection to the first IC by integrating a second IC (12) carrying ESD-protection into the connector (8).

Abstract: The present invention relates to a discharge structure for an overvoltage and/or overcurrent protection, in particular to a discharge structure for an electrostatic discharge (ESD) protection, for an integrated circuit (IC), and to an ESD protection device for an IC comprising such a discharge structure and to a method for making such a structure. The present invention particularly relates to such a discharge structure (50, 52) which comprises at least two discharge paths (40, 80) provided to conduct a current to a terminal (60), whereas substantially all of the discharge paths (40, 80) present substantially the same resistance for the current.