Abstract: A thin semiconductor layer is formed and patterned on a semiconductor substrate to form a thin semiconductor fuselink on shallow trench isolation and between an anode semiconductor region and a cathode semiconductor region. During metallization, the semiconductor fuselink is converted to a thin metal semiconductor alloy fuselink as all of the semiconductor material in the semiconductor fuselink reacts with a metal to form a metal semiconductor alloy. The inventive electrical fuse comprises the thin metal semiconductor alloy fuselink, a metal semiconductor alloy anode, and a metal semiconductor alloy cathode. The thin metal semiconductor alloy fuselink has a smaller cross-sectional area compared with prior art electrical fuses. Current density within the fuselink and the divergence of current at the interface between the fuselink and the cathode or anode comparable to prior art electrical fuses are obtained with less programming current than prior art electrical fuses.

Abstract: A method, system and a computer program product for inspecting integrated circuit chips during fabrication. The method including: selecting an integrated circuit chip at a selected level of fabrication; determining coordinates of potential failures of the integrated circuit chip based on one or more risk of failure analyses performed ancillary to fabrication of the integrated circuit chip; automatically generating one or more enhanced defect inspection regions for inspecting the integrated circuit chip based on the coordinates; automatically selecting one or more enhanced defect inspection parameters for each of the enhanced defect inspection regions based on the one or more risk of failure analyses; and generating an enhanced defect inspection recipe, the enhanced defect inspection recipe including a location on the integrated circuit chip, an enhanced defect inspection parameter and a value for the enhanced defect inspection parameter for each of the one or more enhanced defect inspection regions.

Abstract: A method and computer program product for implementing inspection recipe services are provided. The method includes defining a modified reticle pitch for use in inspecting programmed defects on a test structure, the modified reticle pitch extending the distance of one reticle field plus a portion of an adjacent reticle field on the test structure. The test structure includes a number of arrays linearly arranged on the test structure and spaced equidistant, and each of the arrays corresponds to a reticle field and includes a number of cells. The method also includes using the modified reticle field pitch and an alignment site on the test structure to perform a random mode inspection of the test structure.

Abstract: A method, apparatus, and computer program product for implementing inspection recipe services are provided. The apparatus includes a test structure including a semiconductor substrate and a number of arrays disposed on the semiconductor substrate. The arrays are linearly arranged and spaced equidistant. Each of the arrays corresponds to a reticle field and includes a number of cells. The test structure also includes a defect programmed into every third array. The defect is programmed in the same location on each third array. The test structure further includes an alignment site defined on the test structure for providing a point of reference upon inspection. The alignment site, in conjunction with a modified reticle pitch extending the distance of one reticle field plus a portion of an adjacent reticle field, are used to perform a random mode inspection of selected arrays in the test structure.

Abstract: A method, apparatus, and computer program product for implementing inspection recipe services are provided. The apparatus includes a test structure including a semiconductor substrate and a number of arrays disposed on the semiconductor substrate. The arrays are linearly arranged and spaced equidistant. Each of the arrays corresponds to a reticle field and includes a number of cells. The test structure also includes a defect programmed into every third array. The defect is programmed in the same location on each third array. The test structure further includes an alignment site defined on the test structure for providing a point of reference upon inspection. The alignment site, in conjunction with a modified reticle pitch extending the distance of one reticle field plus a portion of an adjacent reticle field, are used to perform a random mode inspection of selected arrays in the test structure.

Abstract: A method, system and a computer program product for inspecting integrated circuit chips during fabrication. The method including: selecting an integrated circuit chip at a selected level of fabrication; determining coordinates of potential failures of the integrated circuit chip based on one or more risk of failure analyses performed ancillary to fabrication of the integrated circuit chip; automatically generating one or more enhanced defect inspection regions for inspecting the integrated circuit chip based on the coordinates; automatically selecting one or more enhanced defect inspection parameters for each of the enhanced defect inspection regions based on the one or more risk of failure analyses; and generating an enhanced defect inspection recipe, the enhanced defect inspection recipe including a location on the integrated circuit chip, an enhanced defect inspection parameter and a value for the enhanced defect inspection parameter for each of the one or more enhanced defect inspection regions.

Abstract: A method and system for inspecting integrated circuit chips during fabrication. The method including: selecting an integrated circuit chip at a selected level of fabrication; determining coordinates of potential failures of the integrated circuit chip based on one or more risk of failure analyses performed ancillary to fabrication of the integrated circuit chip; automatically generating one or more enhanced defect inspection regions for inspecting the integrated circuit chip based on the coordinates; automatically selecting one or more enhanced defect inspection parameters for each of the one or more enhanced defect inspection regions based on the one or more risk of failure analyses; and generating an enhanced defect inspection recipe, the enhanced defect inspection recipe including a location on the integrated circuit chip, an enhanced defect inspection parameter and a value for the enhanced defect inspection parameter for each of the one or more enhanced defect inspection regions.

Abstract: A method and system for inspecting integrated circuit chips during fabrication. The method including: selecting an integrated circuit chip at a selected level of fabrication; determining coordinates of potential failures of the integrated circuit chip based on one or more risk of failure analyses performed ancillary to fabrication of the integrated circuit chip; automatically generating one or more enhanced defect inspection regions for inspecting the integrated circuit chip based on the coordinates; automatically selecting one or more enhanced defect inspection parameters for each of the one or more enhanced defect inspection regions based on the one or more risk of failure analyses; and generating an enhanced defect inspection recipe, the enhanced defect inspection recipe including a location on the integrated circuit chip, an enhanced defect inspection parameter and a value for the enhanced defect inspection parameter for each of the one or more enhanced defect inspection regions.