Abstract: A heating device includes: a heating element including a mountain part and a valley part alternately connected in plurality to form a meander shape, and a holding body receiving part an end of the valley part, where a width of the holding body receiving part is greater than that of the valley part; an insulating body installed at an outer circumference of the heating element with both ends of the heating element fixed thereto; and a staple pin penetrating the holding body receiving part and a neighboring holdings body receiving part to fix the heating element to the insulating body, where the staple pin is dislocated with respect to a center of the holding body receiving part and an amount of dislocation of the staple pin varies according to a distance between the holding body receiving part and the both ends.

Abstract: A substrate processing apparatus including a vertical reaction container; an insulating wall formed of an insulating material and including a reaction container accommodation chamber for accommodating the reaction container therein; a heater installed in an inner wall of the reception container reception chamber on the insulating wall; an air circulation channel installed vertically in a sidewall of the insulating wall; a blower for distributing air upward or downward in the air circulation channel; intake valves for communicating the air circulation channel with the air; and exhaust valves for communicating the air circulation channel with an equipment exhaust system. In a temperature elevating process and a temperature lowering process, the intake valves and the exhaust valves are switched.

Abstract: A temperature detecting apparatus is provided which is capable of suppressing disconnection of a thermocouple wire or positional deviation of a thermocouple junction portion caused by change over time. The temperature detecting apparatus includes: an insulation rod installed to extend in a vertical direction and including a through-hole in vertical direction; a thermocouple wire inserted in the through-hole of the insulation rod, the thermocouple wire including a thermocouple junction portion at an upper end thereof and an angled portion at a lower end of the insulation rod; and a buffer area installed below the insulation rod and configured to suppress a restriction of a horizontal portion of the angled portion upon heat expansion, wherein an upper portion of the thermocouple wire or a middle portion in the vertical direction are supported by the insulation rod.

Abstract: A heat insulation structure, which has a cylindrical side wall part formed in a multilayer structure, includes: a cooling gas supply port provided in an upper portion of a side wall outer layer disposed in an outer side of the side wall part; a cooling gas passage provided between a side wall inner layer disposed in an inner side of the side wall part and the side wall outer layer; a space provided in an inner side of the side wall inner layer; a plurality of blowout holes provided in the side wall inner layer for distributing cooling gas from the cooling gas passage to the space; a buffer area continuously provided in the cooling gas supply port and the cooling gas passage; and a throttle part configured to reduce a cross-sectional area of a boundary surface between the buffer area and the cooling gas passage.

Abstract: A temperature detecting apparatus is provided which is capable of suppressing disconnection of a thermocouple wire or positional deviation of a thermocouple junction portion caused by change over time. The temperature detecting apparatus includes: an insulation rod installed to extend in a vertical direction and including a through-hole in vertical direction; a thermocouple wire inserted in the through-hole of the insulation rod, the thermocouple wire including a thermocouple junction portion at an upper end thereof and an angled portion at a lower end of the insulation rod; and a buffer area installed below the insulation rod and configured to suppress a restriction of a horizontal portion of the angled portion upon heat expansion, wherein an upper portion of the thermocouple wire or a middle portion in the vertical direction are supported by the insulation rod.

Abstract: A heat treatment apparatus capable of achieving high-accuracy processing and high safety and a method of manufacturing a substrate are provided. The heat treatment apparatus 10 includes a reaction tube 42 for processing a substrate, a manifold 44 for supporting the reaction tube 42, a heater 46 installed around the reaction tube 42 to heat an inner part of the reaction tube 42, a surrounding member 500 installed to surround a side portion of the reaction tube 42 arranged in a lower portion than the heater 46; an exhaust device 301 for forcibly exhausting a gap 506 between the surrounding member 500 and the reaction tube 42; and a sealing member 150 installed in a contacting portion between the reaction tube 42 and the manifold 44. Here, an inlet hole 501 through which the exhaust device inhales an atmosphere outside the surrounding member 500 to the gap 506 is installed in the surrounding member 500.

Abstract: A substrate processing apparatus includes: a reaction tube configured to accommodate a substrate holder holding a plurality of substrates and process a substrate held on the substrate holder; a heating unit installed outside the reaction tube and configured to heat an inside of the reaction tube; a protection tube installed to extend in a vertical direction in contact with an outer wall of the reaction tube; an insulating tube disposed inside the protection tube and having through-holes extending in a vertical direction; a thermocouple having a thermocouple junction provided at an upper end thereof, and thermocouple wires joined at the thermocouple junction and inserted into the through-holes of the insulating tube; a gas supply unit configured to supply a gas, for processing a substrate accommodated in the reaction tube, into the reaction tube; and an exhaust unit configured to exhaust a gas from the reaction tube.

Abstract: A substrate processing method in a processing chamber, has: accommodating a substrate into a processing chamber; and processing the substrate in the processing chamber on the basis of a correlation of a preset temperature of a heating device, a flow rate of fluid supplied by a cooling device and a temperature deviation between the center side of the substrate accommodated in the processing chamber and the outer peripheral side of the substrate while the substrate accommodated in the processing chamber is optically heated from an outer periphery side of the substrate at a corrected preset temperature by the heating device and the fluid is supplied to the outside of the processing chamber at the flow rate based on the correlation concerned to cool the outer peripheral side of the substrate by the cooling device.

Abstract: A substrate processing apparatus has: a process chamber in which a substrate is processed; a heating device that optically heats the substrate accommodated in the process chamber from an outer periphery side of the substrate; a cooling device that cools the outer periphery side of the substrate by flowing a fluid in a vicinity of an outer periphery of the substrate optically heated by the heating device; a temperature detection portion that detects a temperature inside the process chamber; and a heating control portion that controls the heating device and the cooling device in such a manner so as to provide a temperature difference between a center portion of the substrate and an end portion of the substrate while maintaining a temperature at the center portion at a pre-determined temperature according to the temperature detected by the temperature detection portion.

Abstract: Provided are a substrate processing apparatus, a semiconductor device manufacturing method, and a temperature controlling method, which are adapted to improve equipment operational rate. A calculation parameter computing unit computes a calculation parameter using at least a first calculation parameter correction value determined by a first calculation parameter setting unit based on an accumulated film thickness on a reaction vessel, a second calculation parameter correction value determined by a second calculation parameter setting unit based on an accumulated film thickness on a filler wafer, and a third calculation parameter correction value determined by a third calculation parameter setting unit based on the number of filler wafers.

Abstract: A temperature adjustment method is provided to improve operating efficiency and reduce costs. Control of a heating unit in a thermal processing system including a heating control section is performed based on a first output control pattern obtained by subjecting a detection temperature provided by a first temperature detecting unit to an integral operation, a differential operation, and a proportional operation under a condition of a first set of temperature-setting conditions, a second output control pattern obtained by determining a first heat quantity in a period from the start of an increase in temperature detected by a second temperature detecting unit until the temperature inside the processing chamber reaches a maximum temperature, and using a second heat quantity obtained by subtracting the part of the output provided by the proportional operation from the first heat quantity.

Abstract: A temperature detecting apparatus is provided which is capable of suppressing disconnection of a thermocouple wire or positional deviation of a thermocouple junction portion caused by change over time. The temperature detecting apparatus includes: an insulation rod installed to extend in a vertical direction and including a through-hole in vertical direction; a thermocouple wire inserted in the through-hole of the insulation rod, the thermocouple wire including a thermocouple junction portion at an upper end thereof and an angled portion at a lower end of the insulation rod; and a buffer area installed below the insulation rod and configured to suppress a restriction of a horizontal portion of the angled portion upon heat expansion, wherein an upper portion of the thermocouple wire or a middle portion in the vertical direction are supported by the insulation rod.

Abstract: Provided is a substrate processing apparatus capable of suppressing inferiority when heat treatment is controlled using a temperature sensor.

Abstract: A heating apparatus comprises heating elements arranged of a sheet form and having notches or through holes provided therein, a side wall member made of an electrically conductive material and arranged to surround and define the heating space, and holding members disposed at the heating space side of the side wall member for holding at one end the heating elements. Also, extending members are provided, each member comprising an extending-through portion arranged to project from the heating space side of the side wall member and extend through the notch or through hole between both ends in the heating element and projected portions arranged to project at both, front and back, sides of the heating element from the extending-through portion in a direction, which is orthogonal to the extending direction of the extending-through portion, thus to inhibit the displacement of the heating elements along the extending direction.

Abstract: A substrate processing apparatus comprises a processing chamber for storing a boat supporting multiple substrates and for processing the multiple substrates, a heater unit installed around the processing chamber for heating the substrates, and a coolant gas supply nozzle including a pipe section extending perpendicular to a main surface of the substrate supported in the boat stored in the processing chamber, and a spray hole formed on the pipe section for spraying coolant gas to at least two of the multiple substrates, wherein the coolant gas supply nozzle is formed so that the cross sectional area of the pipe section in the area where the spray hole is formed is larger than the total opening area of the spray hole.

Abstract: A heating apparatus comprises a wall for surrounding and defining a heating space, a heating element mounted on the inner side of the wall, reflecting members for reflecting the heat emitted from the heating element. Also, a moving unit joined to one end of each of the reflecting members for moving the reflecting members. Moreover, pivotal members joined to the reflecting members beside more their respective other side than one side of the reflecting members for controlling as pivots the movement of the reflecting member driven by the moving unit.

Abstract: A heater supporting device for use in a semiconductor manufacturing apparatus is provided so as to improve the uniformity of a temperature property and the expected lifespan by preventing support pieces from being damaged and separated from piece holders, and preventing deterioration in adiabatic efficiency in the vicinity of a ceiling of a vertical type furnace. A heating element of a coil shape is disposed around an object. The support pieces are vertically connected in multiple. Hollows of an elliptical shape are formed between the respective support pieces. Concave insertions are formed on one of upper and lower surfaces of the respective support pieces, and convex insertions are formed on the other one of the upper and lower surfaces of the respective support pieces. The convex insertions are insert-fitted with the concave insertions. The support pieces are vertically connected in multiple by insert-fitting the concave insertions to the convex insertions.

Abstract: A heat treatment apparatus capable of achieving high-accuracy processing and high safety and a method of manufacturing a substrate are provided. The heat treatment apparatus 10 includes a reaction tube 42 for processing a substrate, a manifold 44 for supporting the reaction tube 42, a heater 46 installed around the reaction tube 42 to heat an inner part of the reaction tube 42, a circumferential portion 500 installed to surround a side portion of the reaction tube 42 arranged in a lower portion than the heater 46; an exhaust device 301 for forcibly exhausting a gap 506 between the circumferential portion 500 and the reaction tube 42; and a sealing member 150 installed in a contacting portion between the reaction tube 42 and the manifold 44. Here, an inlet port 501 through which the exhaust device inhales an atmosphere outside the circumferential portion 500 to the gap 506 is installed in the circumferential portion 500.

Abstract: A semiconductor manufacturing method includes a determination of, when the heater is controlled using a first output control pattern, an output amount by differential operation, and an output amount by a proportional operation such that a temperature detected by the first thermometer becomes a target temperature from a temperature at a ramp-up start time, patterning a part of an operation amount of the heater by using a first heat amount to determine a second output control pattern, the second heat amount being determined based on a temperature detected by the second thermometer and being defined at a period from the ramp-up start time to a time of maximum temperature, the operation amount of the heater being defined at the period, and a processing of the substrate while controlling the heater by using the second output control pattern.

Abstract: Provided are a heating device, a substrate processing apparatus, and a method of manufacturing a semiconductor device. The heating device comprises: a heating element including a mountain part and a valley part that are alternately connected in plurality in a meander shape with both ends being fixed; holding body receiving parts respectively installed at ends of the valley parts and formed as cutout parts having a width larger than a width of the valley part; an insulating body installed at an outer circumference of the heating element; a holding body disposed in the holding body receiving part and fixed to the insulating body; the heating element having a ring shape; the insulating body installed in a manner of surrounding the outer circumference of the heating element; and a fixation part configured to fix the heating element to an inner wall of the insulating body.