Abstract: An objective of the present invention is to provide polynucleotides encoding insect desiccation resistance proteins, and uses thereof. cDNA libraries were produced from Polypedilum vanderplanki larvae in a desiccated state, a P. vanderplanki EST database was constructed, and genes encoding LEA proteins were isolated. This resulted in the successful isolation of three types of novel gene encoding LEA-like proteins (PvLEA1, PvLEA2, and PvLEA3). When secondary structure predictions and motif searches were performed on the proteins deduced from each of the genes, all three proteins had ?-helix-rich structures and LEA_4 motifs, which are characteristic of LEA proteins. Moerover, the recombinant proteins synthesized from PvLEA1, 2 and 3 genes were heat soluble even when boiling, so that PvLEA1, 2 and 3 proteins have highly hydrophilic property as well as plant LEA proteins. Therefore, the three isolated genes were found to be novel P. vanderplanki-derived LEA genes.

Abstract: In a structure in which an opening-and-closing timing of an intake valve and/or an exhaust valve is varied due to a rotational phase of a camshaft with respect to a crankshaft of an internal combustion engine being varied, the rotational phase is detected at each rotational period of the camshaft on the basis of a reference rotational position of the crankshaft and a reference rotational position of the camshaft which have been detected, and on the other hand, the rotational phase is detected in an arbitrary timing regardless of the rotational period of the camshaft. Further, a correction value for correcting the rotational phase detected in an arbitrary timing is learned with the rotational phase detected at each rotational period of the camshaft as a reference.

Abstract: A centric phase of an operating angle of an engine valve is detected on the basis of an interval between a reference rotational position of a crankshaft and a reference rotational position of a camshaft, and on the other hand, the centric phase is detected at a period shorter than a period between the reference rotational positions, and one of those detected results is selected on the basis of a predetermined regulation, and an opening characteristic of the engine valve is operated on the basis of the selected centric phase.

Abstract: A centric phase of an operating angle of an engine valve is detected on the basis of an interval between a reference rotational position of a crankshaft and a reference rotational position of a camshaft, and on the other hand, the centric phase is detected each predetermined time, and a Variable valve Timing Control mechanism is feedback-controlled on the basis of a value which has been updated more recently between both detected results.

Abstract: In a rotational phase adjusting apparatus for adjusting a difference in rotational phase between a first element and a second element by controlling an engagement therebetween through a third element whose condition is set by a movement of a fourth element, an elastic member is arranged between the fourth element and the one of the first and second elements, and a brake generates a variable braking force to be applied to the fourth element so that a rotational positional relationship between the fourth element and the one of the first and second elements and a value of a force applicable from the fourth element to the third element are elastically variable in accordance with a value of the variable braking force.

Abstract: A tissue of a multicellular organism is gradually dried during cultivation. After the tissue has been completely dehydrated, water is added to the tissue for its recovery. The tissue of the multicellular organism is submerged in an insect body fluid medium treated with heat, and dried for 48 hours or more.

Abstract: This invention provides a programming method of a nonvolatile semiconductor device capable of programming multi-value data of three or more values rapidly. If between two threshold voltage ranges corresponding to respective memory states before and after programming, at least one threshold voltage range corresponding to other memory states exists in a programming target memory cell, a first programming step of applying at least one first program gate voltage corresponding to at least one of other memory states and a predetermined program drain voltage to a programming target memory cell is executed, then a second programming step of applying a second program gate voltage corresponding to a programmed state after programming and a predetermined program drain voltage is executed, and thereafter a verification step of verifying whether or not a program is made in a programming target memory cell is executed.

Abstract: In a structure with a variable valve timing mechanism which varies an opening-and-closing timing of an intake valve and/or an exhaust valve due to a rotational phase of a camshaft with respect to a crankshaft of an internal combustion engine being varied, the rotational phase is detected in an arbitrary timing regardless of a rotational period of the camshaft, and the variable valve timing mechanism is controlled on the basis of the detected rotational phase.

Abstract: In a structure in which an opening-and-closing timing of an intake valve and/or an exhaust valve is varied due to a rotational phase of a camshaft with respect to a crankshaft of an internal combustion engine being varied, the rotational phase is detected at each rotational period of the camshaft on the basis of a reference rotational position of the crankshaft and a reference rotational position of the camshaft which have been detected, and on the other hand, the rotational phase is detected in an arbitrary timing regardless of the rotational period of the camshaft. Further, a correction value for correcting the rotational phase detected in an arbitrary timing is learned with the rotational phase detected at each rotational period of the camshaft as a reference.

Abstract: A valve timing control apparatus for an internal combustion engine which comprises a variable valve timing mechanism which varies an opening-and-closing timing of an intake valve and/or an exhaust valve of an engine, and in which the opening-and-closing timing at a time of starting the engine is set to a starting time timing which is at a further advance side than a maximum retard timing which is retarded at the maximum, said apparatus characterized in that, at a time of stopping the engine, the variable valve timing mechanism is controlled such that the opening-and-closing timing is made to be the starting time timing.

Abstract: A Mn—Zn based ferrite having a main component comprised of 51 to 54 mol % of an iron oxide in Fe2O3 conversion, 14 to 21 mol % of a zinc oxide in ZnO conversion and the rest of a manganese oxide, wherein a content (? [ppm]) of cobalt oxide in a CoO conversion with respect to 100 wt % of the main component satisfies a relation formula below. Relation formula: Y1???Y2??(1) Note that Y1 and Y2 are expressed by the formulas below and CoO>0 [ppm]. Y1=(?0.13·B2+1.5·B?15.6A+850)/(0.0003·B+0.0098)?233??(2) Y2=(?0.40·B2+4.6·B?46.7A+2546)/(0.0003·B+0.0098)+1074??(3) The A and B in the above Y1 and Y2 are A=Fe2O3 (mol %) and B=ZnO (mol %).

Abstract: A centric phase of an operating angle of an engine valve is detected on the basis of an interval between a reference rotational position of a crankshaft and a reference rotational position of a camshaft, and on the other hand, the centric phase is detected at a period shorter than a period between the reference rotational positions, and one of those detected results is selected on the basis of a predetermined regulation, and an opening characteristic of the engine valve is operated on the basis of the selected centric phase.

Abstract: A centric phase of an operating angle of an engine valve is detected on the basis of an interval between a reference rotational position of a crankshaft and a reference rotational position of a camshaft, and on the other hand, the centric phase is detected each predetermined time, and a Variable valve Timing Control mechanism is feedback-controlled on the basis of a value which has been updated more recently between both detected results.

Abstract: In a nonvolatile floating-gate semiconductor memory device, a word line voltage supply circuit is configured to be able to apply gate voltages to the same memory cells such that the gate voltage applied at and after the second time is different from the gate voltage applied at the first time. At least one of the word line voltage supply circuit and the bit line voltage supply circuit is set to be able to apply a voltage to the same memory cells for a longer application period at the first time than at and after the second time. With this configuration, the threshold voltage distribution of the memory cells is controlled to be narrow.

Abstract: A semiconductor memory device comprises at least one memory plane in which a plurality of memory blocks are arranged, and a block decoder circuit which decodes a block address signal for selecting the memory block from the memory plane and outputs block selection signals for selecting the memory block, as well as puts all of the block selection signals in a selected state and output them in a predetermined test mode, and a block selection signal inversion circuit which inverts or non-inverts signal levels of the block selection signals.

Abstract: Two bias circuits which supply a current to a selected memory cell and a reference memory cell have the same circuit constitution. Each bias circuit includes a first active element between a power supply node and a junction node, where a current is controlled to prevent a voltage level at the junction node from fluctuating, a second active element between the power supply node and an output node, where a current is controlled such that a voltage level at the output node is changed in direction opposite to a voltage level at the junction node in other bias circuit, a third active element and a fourth active element between the junction node and a current supply node and between the output node and the current supply node, respectively, where a bias voltage is adjusted.

Abstract: In a nonvolatile floating-gate semiconductor memory device, a word line voltage supply circuit is configured to be able to apply gate voltages to the same memory cells such that the gate voltage applied at and after the second time is different from the gate voltage applied at the first time. At least one of the word line voltage supply circuit and the bit line voltage supply circuit is set to be able to apply a voltage to the same memory cells for a longer application period at the first time than at and after the second time. With this configuration, the threshold voltage distribution of the memory cells is controlled to be narrow.

Abstract: An Mn—Zn ferrite wherein 0 to 5000 ppm of a Co oxide in a Co3O4 conversion is contained in a basic component constituted by Fe2O3: 51.5 to 57.0 mol % and ZnO: 0 to 15 mol % (note that 0 is not included) wherein the rest is substantially constituted by MnO; and a value ? in a formula (1) below in said ferrite satisfies ??0.93. ?=((Fe2+?Mn3+?Co3+)×(4.29×A+1.91×B+2.19×C+2.01×D))/((A?B?C?D)×100)??formula (1). Note that in the formula (1), (Fe2+?Mn3+?Co3+): [wt %], A: Fe2O3 [mol %], B: MnO [mol %], C: ZnO [mol %] and D: CoO [mol %]. According to the present invention, a highly reliable Mn—Zn ferrite used as a magnetic core of a power supply transformer, etc. of a switching power supply, etc., having a small core loss in a wide temperature range, furthermore, exhibiting a little deterioration of core loss characteristics under a high temperature (in a high temperature storage test) and having excellent magnetic stability, a transformer magnetic core and a transformer can be provided.

Abstract: A transformer core having a high inductance, small inductance tolerance, and small harmonic distortion, in particular total harmonic distortion (THD), wherein a surface roughness of a gap forming surface (RaG) forming a gap for adjustment of the inductance is not more than 0.70 ?m, preferably not more than 0.45 ?m, a transformer using the same, and a method of production of a transformer core having the above properties polishing the gap forming surface forming the gap by a grinding wheel having polishing abrasives of a particle size of #400 to #8000, preferably #600 to #8000 (JIS-R6001).

Abstract: This invention provides a programming method of a nonvolatile semiconductor device capable of programming multi-value data of three or more values rapidly. If between two threshold voltage ranges corresponding to respective memory states before and after programming, at least one threshold voltage range corresponding to other memory states exists in a programming target memory cell, a first programming step of applying at least one first program gate voltage corresponding to at least one of other memory states and a predetermined program drain voltage to a programming target memory cell is executed, then a second programming step of applying a second program gate voltage corresponding to a programmed state after programming and a predetermined program drain voltage is executed, and thereafter a verification step of verifying whether or not a program is made in a programming target memory cell is executed.