Abstract: A vehicle object detection system configured to generate a judgement on whether a target object which has been detected to enter the detection area is an alert object, and to output the judgement to a warning which is configured to output a warning to a driver of the subject vehicle that a target object is present in the detection area behind the subject vehicle based on the judgement indicating that the target object is an alert object, wherein the system is configured to delay generating the judgment until a specified period of time has elapsed from a point in time when the target object is detected to enter a detectable area included in a field of view of a sensor, wherein the detectable area overlaps with only a part of the detection area.

Abstract: A vehicle detection system, for detecting a target vehicle in a detection area located behind a subject vehicle, is configured to judge whether a target vehicle which has been detected to approach the subject vehicle occupying a driving lane from behind in a first adjacent lane which is on one side of the driving lane and which target vehicle has been further detected to change from the first adjacent lane by diagonally passing the driving lane on to a second adjacent lane on the other side of the driving lane, is an alert object, and output a result of judgement to warn a driver of the subject vehicle that a target vehicle is present behind the subject vehicle, and determine, on the basis of a change of a lateral overlap of the target vehicle in the detection area, an overlap change rate.

Abstract: A vehicle detection system configured to judge whether a target vehicle, which has been detected to approach the subject vehicle from behind in a driving lane being used by the subject vehicle and being covered by the detection area is an alert object, to output a result of judgement to a warning which warns a driver of the subject vehicle that a target vehicle (60) is present in the driving lane behind the subject vehicle based on the judging the target vehicle to be an alert object, and to determine, on the basis of a change of a lateral overlap of the target vehicle in the detection area, an overlap change rate which is defined as a ratio of the change of the overlap to a specified time.

Abstract: A second polymer is prepared through derivatization of a first polymer. Kendrick Mass Defect (KMD) analysis is applied on a mass spectrum of the second polymer, to thereby produce a plot. Meanwhile, a plurality of mass candidates for a non-primary-chain segment are calculated based on a mass spectrum of the first polymer. The KMD analysis is applied on the plurality of mass candidates, to thereby produce reference images. A mass of the non-primary-chain segment is identified through matching of two KMD analysis results.

Abstract: A memory includes: a magnet including a first and second portions adjacent in a first direction. The first portion has a first dimension in a second direction at a first position at which a dimension of the magnet in the second direction is maximum, the second direction perpendicular to the first direction, the second portion has a second dimension in the second direction at a second position at which a dimension of the magnet in the second direction is minimum, the second dimension smaller than the first dimension, the first portion is continuous to the second portion via a third position between the first and second positions, a curve corresponding to an outer of the magnet extends between the first and third positions, and the curve passes through a side closer to the central axis of the magnet than a straight line connecting the first and second positions.

Abstract: The present invention aims to provide a viscosity-index improving agent having an excellent friction reduction effect to reduce friction of a lubricating oil composition when the viscosity-index improving agent is added thereto. The present also aims to provide a lubricating oil composition containing the viscosity-index improving agent. The present invention relates to, for example, a viscosity-index improving agent containing: (co)polymer (A) containing, as an essential constituent monomer, a polyolefin-based monomer (a) represented by the following formula (1); an ester oil (B1) having a kinematic viscosity at 100° C. of 1.00 to 2.50 mm2/s; and an ester oil (B2) having a kinematic viscosity at 100° C. of 2.51 to 5.

Abstract: The present invention aims to provide a viscosity-index improving agent capable of providing a lubricating oil composition having an appropriate gelation index, an excellent HTHS viscosity at 100° C., and an excellent kinematic viscosity at 40° C. when the viscosity-index improving agent is added thereto. The present also aims to provide a lubricating oil composition containing the viscosity-index improving agent.

Abstract: The present disclosure relates a photosensitive resin composition containing (A) an alkali-soluble resin having an imide bond and a phenolic hydroxyl group and (B) a compound that generates acid by light, a patterned cured film using the photosensitive resin composition, a method for producing a patterned cured film, and a semiconductor element.

Abstract: A molded article includes a fiber-reinforced composite material in which reinforcing fibers are impregnated with a matrix resin, wherein components A, B, and C: Component A: a fiber-reinforced base material in which continuous reinforcing fibers are impregnated with a PPS resin is applied as the matrix resin, and a volume content of fiber Vf?A in the component A is Vf?A=50 to 70 vol %; Component B: a fiber-reinforced base material in which the continuous reinforcing fibers are impregnated with the matrix resin, the PPS resin and a PPS resin having a melting point TmB lower than a melting point TmA of the PPS resin are applied as the matrix resins, and a volume content of fiber Vf?B in the component B is Vf?B<Vf?A; and Component C: a fiber-reinforced resin obtained by impregnating discontinuous reinforcing fibers with the PPS resin is applied as the matrix resin.

Abstract: An automatic landing system includes an imaging device mounted on a vertical take-off and landing aircraft; a relative-position acquisition unit that performs image processing on an image of a marker at a target landing point, and that acquires a relative position between the aircraft and the target landing point; a relative-altitude acquisition unit for acquiring a relative altitude between the aircraft and the target landing point; and a control unit for controlling the aircraft in a plurality of control modes so that the relative position becomes zero. The control modes include a hovering mode in which the relative altitude of the aircraft is lowered to a predetermined relative altitude when the relative position is within a first threshold value. A transition to a landing mode occurs upon satisfying predetermined conditions including the relative position being within a predetermined threshold value less than the first threshold value.

Abstract: Provided is a mask blank, including a phase shift film. The phase shift film has a structure where a first layer and a second layer are stacked in this order from a side of the transparent substrate. The first layer is provided in contact with a surface of the transparent substrate. Refractive indexes n1 and n2 of the first layer and the second layer, respectively, at a wavelength of an exposure light of an ArF excimer laser satisfy the relation n1<n2. Extinction coefficients k1 and k2 of the first layer and the second layer, respectively, at a wavelength of the exposure light satisfy the relation k1<k2. Film thicknesses d1 and d2 of the first layer and the second layer, respectively, satisfy the relation d1<d2.

Abstract: This mask blank has a structure wherein a phase shift film and a light shielding film are sequentially formed as layers in this order on a transparent substrate. The optical density of the layered structure composed of the phase shift film and the light shielding film with respect to exposure light, which is an ArF excimer laser, is 3.5 or more; and the light shielding film has a structure wherein a lower layer and an upper layer are formed as layers sequentially from the transparent substrate side. The lower layer is formed from a material wherein the total content of chromium, oxygen, nitrogen and carbon is 90 atomic % or more; and the upper layer is formed from a material wherein the total content of metals and silicon is 80 atomic % or more. The extinction coefficient kU of the upper layer for the exposure light is higher than the extinction coefficient kL of the lower layer for the exposure light.

Abstract: A mask blank that includes a thin film made of a material containing silicon and nitrogen for forming a transfer pattern on a transparent substrate. In conducting an X-ray photoelectron spectroscopy on a plurality of measurement locations in an inner region, which is a region excluding a vicinity region and a surface layer region of the thin film, in order to acquire an average value PSi_fi_av of maximum peaks PSi_fi of photoelectron intensity of Si2p narrow spectrum and conducting an X-ray photoelectron spectroscopy on a plurality of measurement locations in the transparent substrate to acquire an average value PSi_sb_av of maximum peaks PSi_sb of photoelectron intensity of Si2p narrow spectrum, (PSi_fi_av)/(PSi_sb_av) is 1.08 or more.

Abstract: Provided is a mask blank, including a phase shift film. The phase shift film has a structure where a first layer and a second layer are stacked in this order from a side of the transparent substrate. The first layer is provided in contact with a surface of the transparent substrate. Refractive indexes n1 and n2 of the first layer and the second layer, respectively, at a wavelength of an exposure light of an ArF excimer laser satisfy the relation n1<n2. Extinction coefficients k1 and k2 of the first layer and the second layer, respectively, at a wavelength of the exposure light satisfy the relation k1<k2. Film thicknesses d1 and d2 of the first layer and the second layer, respectively, satisfy the relation d1<d2.

Abstract: This mask blank has a structure wherein a phase shift film and a light shielding film are sequentially formed as layers in this order on a transparent substrate. The optical density of the layered structure composed of the phase shift film and the light shielding film with respect to exposure light, which is an ArF excimer laser, is 3.5 or more; and the light shielding film has a structure wherein a lower layer and an upper layer are formed as layers sequentially from the transparent substrate side. The lower layer is formed from a material wherein the total content of chromium, oxygen, nitrogen and carbon is 90 atomic % or more; and the upper layer is formed from a material wherein the total content of metals and silicon is 80 atomic % or more. The extinction coefficient kU of the upper layer for the exposure light is higher than the extinction coefficient kL of the lower layer for the exposure light.

Abstract: This mask blank has a structure wherein a phase shift film and a light shielding film are sequentially formed as layers in this order on a transparent substrate. The optical density of the layered structure composed of the phase shift film and the light shielding film with respect to exposure light, which is an ArF excimer laser, is 3.5 or more; and the light shielding film has a structure wherein a lower layer and an upper layer are formed as layers sequentially from the transparent substrate side. The lower layer is formed from a material wherein the total content of chromium, oxygen, nitrogen and carbon is 90 atomic % or more; and the upper layer is formed from a material wherein the total content of metals and silicon is 80 atomic % or more. The extinction coefficient kU of the upper layer for the exposure light is higher than the extinction coefficient kL of the lower layer for the exposure light.

Abstract: Provided is a mask blank including a phase shift film The phase shift film has a structure where a first layer, a second layer, and a third layer are stacked in this order from a side of the transparent substrate. Refractive indexes n1, n2, and n3 of the first layer, the second layer, and the third layer, respectively, at a wavelength of an exposure light of an ArF excimer laser satisfy the relations n1>n2 and n2<n3. Extinction coefficients k1, k2, and k3 of the first layer, the second layer, and the third layer, respectively, at a wavelength of the exposure light satisfy the relations k1<k2 and k2>k3. Film thicknesses d1, d2, and d3 of the first layer, the second layer, and the third layer, respectively, satisfy the relations d1<d3 and d2<d3.

Abstract: In a mask blank, a phase shift film in contact with a transparent substrate includes a stack of two or more layers including a lowermost layer. The, layers other than the lowermost layer are made of a material consisting of silicon and one or more elements selected from a metalloid element and anon-metallic element. The lowermost layer is made of a material consisting of silicon and nitrogen and, optionally, one or more elements selected from a metalloid element and anon-metallic element. A ratio of a number of Si3N4 bonds present in the lowermost layer to a total number of Si3N4 bonds, SiaNb bonds (provided that b/[a+b]<4/7), and Si—Si bonds present is 0.05 or less. A ratio of a number of SiaNb bonds present in the lowermost layer to a total number of Si3N4 bonds, SiaNb bonds, and Si—Si bonds present is 0.1 or more.

Abstract: A mask blank includes a light shielding film for forming a transfer pattern, provided on a transparent substrate. The light shielding film is made of a material that consists of silicon and nitrogen or that further includes one or more elements selected from a metalloid element and a non-metallic element. In an inner region of the light shielding film (excluding a vicinity region of an interface of the light shielding film with the transparent substrate and a surface layer region of the light shielding film opposite the transparent substrate), the ratio of Si3N4 bonds to the total number of Si3N4 bonds, SiaNb bonds (where a relationship b/[a+b]<4/7 is satisfied), and Si—Si bonds is 0.04 or less, and the ratio of SiaNb bonds to the total number of Si3N4 bonds, SiaNb bonds, and Si—Si bonds is 0.1 or more.

Abstract: A preform element has a tucked portion in at least a portion of a prepreg composed of a reinforced fiber and a thermosetting resin. The preform element, a preform using the same, and a method of producing the same, provide for the preform element to have excellent mechanical properties or filling characteristics with respect to a cavity and is effective in avoiding problems such as fiber bridging or resin richness or warping, even when a three-dimensional form having thickness variations such as thick parts or projections is obtained through a press molding.