Abstract: Provided is a mask blank that is improved in adhesion of a thin film for forming a transfer pattern to a resist, thus capable of suppressing the occurrence of collapse, chipping, or the like of a formed resist pattern. The mask blank has, on a transparent substrate 1, a thin film 2 which is for forming a transfer pattern and is made of a material containing a metal. The thin film 2 has a surface modified layer in the form of an oxide film containing a hydrocarbon. The surface modified layer of the thin film 2 can be formed by, for example, causing a highly concentrated ozone gas and an unsaturated hydrocarbon gas to act on the thin film.

Abstract: Provided is a method of manufacturing a mask blank that is improved in cleaning resistance to ozone cleaning or the like, thus capable of preventing degradation of the mask performance due to the cleaning. The method is for manufacturing a mask blank having, on a substrate, a thin film which is formed at its surface with an antireflection layer made of a material containing a transition metal, and carries out a treatment of causing a highly concentrated ozone gas with a concentration of 50 to 100 vol % to act on the antireflection layer to thereby form a surface modified layer comprising a strong oxide film containing an oxide of the transition metal at a surface of the antireflection layer.

Abstract: A mask blank and transfer mask that overcomes problems caused by an electromagnetic field (EMF) effect when a DRAM half pitch (hp) is 32 nm or less specified in semiconductor device design specifications. The mask blank is used in manufacturing a transfer mask to which ArF exposure light is applied, and includes a light shielding film 10 having a multilayer structure. The multilayer structure includes a light shielding layer 11 and a surface anti-reflection layer 12 formed on a transparent substrate 1. An auxiliary light shielding film 20 is formed on the light shielding film 10. The light shielding film 10 has a thickness of 40 nm or less and an optical density of 2.0 or more to 2.7 or less for exposure light. The optical density is 2.8 or more for exposure light in the multilayer structure of the light shielding film 10 and the auxiliary light shielding film 20.

Abstract: A photomask blank for producing a photomask to which an ArF excimer laser light is applied. The blank includes a light transmissive substrate on which a thin film having a multilayer structure is provided. The thin film has a light-shielding film in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order. The light-shielding layer comprises chromium and nitrogen, and the chromium content is more than 50 atomic %. The front-surface antireflection layer and the back-surface antireflection layer each has an amorphous structure made of a material comprising chromium, nitrogen, oxygen and carbon. The chromium content ratio of the front-surface antireflection layer and the back-surface antireflection layer is 40 atomic % or less. A first sum of nitrogen content and oxygen content of the back-surface antireflection layer is less than a second sum of nitrogen content and oxygen content of the front-surface antireflection layer.

Abstract: A mask blank for use in the manufacture of a transfer mask adapted to be applied with ArF excimer laser exposure light is disclosed. The mask blank has, on a transparent substrate, a light-shielding film for forming a transfer pattern. The light-shielding film has an at least two-layer structure including a lower layer and an upper layer from the transparent substrate side. The lower layer is made of a material composed of a transition metal, silicon, and nitrogen and having a nitrogen content of 21 at % or more and a refractive index n of 1.9 or less. The upper layer is made of a material composed of a transition metal, silicon, and nitrogen and having a refractive index n of 2.1 or less. A surface layer of the upper layer contains oxygen and has a nitrogen content of 14 at % or more.

Abstract: Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 has an at least two-layer structure comprising a lower layer composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen and an upper layer composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. The ratio of the etching rate of the lower layer to that of the upper layer is 1.0 or more and 20.0 or less in etching which is carried out by supplying a fluorine-containing substance to a target portion and irradiating charged particles to the target portion.

Abstract: The present invention provides a photomask blank used for producing a photomask to which an ArF excimer laser light is applied, wherein: a light-shielding film is provided on a light transmissive substrate; the light-shielding film has a laminated structure in which a lower layer, an interlayer and an upper layer are laminated in this order from the side close to the light transmissive substrate; the thickness of the entire light-shielding film is 60 nm or less; the lower layer is made of a film containing a metal and has a first etching rate; the upper layer is made of a film containing a metal and has a third etching rate; the interlayer is made of a film containing the same metal as that contained in the lower layer or the upper layer and has a second etching rate that is lower than the first etching rate and the third etching rate; and the thickness of the interlayer is 30% or less of the thickness of the entire light-shielding film.

Abstract: The present invention provides a photomask blank used for producing a photomask to which an ArF excimer laser light is applied, wherein: a light-shielding film is provided on a light transmissive substrate; the light-shielding film has a laminated structure in which a lower layer, an interlayer and an upper layer are laminated in this order from the side close to the light transmissive substrate; the thickness of the entire light-shielding film is 60 nm or less; the lower layer is made of a film containing a metal and has a first etching rate; the upper layer is made of a film containing a metal and has a third etching rate; the interlayer is made of a film containing the same metal as that contained in the lower layer or the upper layer and has a second etching rate that is lower than the first etching rate and the third etching rate; and the thickness of the interlayer is 30% or less of the thickness of the entire light-shielding film.

Abstract: A head-up display device that includes a projection unit that projects predetermined information on a transparent display panel by superimposing on a background that is viewed by a user through the transparent display panel placed in front of a line of sight of the user; and a controller that controls a display of the predetermined information while changing a display color of the predetermined information sequentially independent of a color of the background.

Abstract: [Object] A photomask blank for use in producing a photomask for exposure with an ArF excimer laser. The photomask blank is intended to be applied to the 32-nm DRAM half-pitch (hp) and succeeding generations in the semiconductor design rule. [Solution] The photomask blank is for use in producing a photomask to which an exposure light having a wavelength not longer than 200 nm is applied. The photomask blank is characterized by comprising a transparent substrate, a light-shielding film formed on the transparent substrate and containing molybdenum and silicon, and an etching mask film formed directly on the light-shielding film and containing chromium. The photomask blank is further characterized in that the light-shielding film comprises a light-shielding layer and an antireflection layer which have been disposed in this order from the transparent substrate side, the light-shielding layer having a molybdenum content of 9-40 at %, and that the etching mask film has a chromium content of 45 at % or lower.

Abstract: Provided is a mask blank which is used for manufacturing an imprinting mold and which may form a fine mold pattern with high pattern accuracy. A mask blank (10) includes a transparent substrate (1) and a thin film (2) contacted with a surface of the substrate. The thin film (2) includes a laminated film including an upper layer (4) which is composed of a material containing silicon (Si) or a material containing tantalum (Ta), and a lower layer (3) which is composed of a material containing at least one of hafnium (Hf) and zirconium (Zr) and containing substantially no oxygen.

Abstract: A mask blank for manufacturing a transfer mask adapted to be applied with ArF excimer laser exposure light that has a transparent substrate and a light-shielding film formed into a transfer pattern. The light-shielding film has at least two-layers, one a lower layer composed mainly of a first material containing a transition metal, silicon, and nitrogen, and the other an upper layer composed mainly of a second material containing a transition metal, silicon, and nitrogen. A ratio of a first etching rate of the lower layer to a second etching rate of the upper layer is 1.0 or more and 5.0 or less in etching carried out by supplying a fluorine-containing substance onto a target portion and irradiating charged particles to the target portion. Another ratio satisfies the following formula CN??0.00526CMo2?0.640CMo+26.624.

Abstract: A photomask blank is for use in manufacturing a photomask to be applied with exposure light having a wavelength of 200 nm or less. The photomask blank has a light-transmitting substrate and a light-shielding film formed thereon. The light-shielding film has a light-shielding layer containing a transition metal and silicon and a front-surface antireflection layer formed contiguously on the light-shielding layer and made of a material containing at least one of oxygen and nitrogen. The light-shielding film has a front-surface reflectance of a predetermined value or less for the exposure light and has a property capable of controlling the change width of the front-surface reflectance at the exposure wavelength to be within 2% when the thickness of the front-surface antireflection layer changes in the range of 2 nm. The material of the front-surface antireflection layer having a refractive index n and an extinction coefficient k capable of achieving such property is selected.

Abstract: A head-up display device includes a projection unit that projects predetermined information on a transparent display panel by superimposing on a background that is visible to a user viewing the transparent display panel placed in front of a line of sight of the user.

Abstract: A projector includes: a laser light generating unit that emits laser light including image information; a laser light scanning unit that scans the laser light emitted by the laser light generating unit at a predetermined scan angle to project an image on a transparent display plate; and a scan control unit that sets a scan driving voltage, which determines the scan angle, according to an atmospheric pressure of an area in which the laser light scanning unit is disposed and supplies the scan driving voltage to the laser light scanning unit to control fluctuations in the scan angle.

Abstract: This electronic apparatus having a software keyboard function includes a detection portion capable of detecting a key input position of an input operation performed by the user and a control portion performing control of changing a key determination range on the basis of at least either a correction operation performed on a prescribed key input or an input frequency of the prescribed key input.

Abstract: A mask blank for manufacturing a transfer mask adapted to be applied with ArF excimer laser exposure light that has a transparent substrate and a light-shielding film formed into a transfer pattern. The light-shielding film has at least two-layers, one a lower layer composed mainly of a first material containing a transition metal, silicon, and nitrogen, and the other an upper layer composed mainly of a second material containing a transition metal, silicon, and nitrogen. A ratio of a first etching rate of the lower layer to a second etching rate of the upper layer is 1.0 or more and 5.0 or less in etching carried out by supplying a fluorine-containing substance onto a target portion and irradiating charged particles to the target portion. Another ratio satisfies the following formula CN??0.00526CMo2?0.640CMo=26.624.

Abstract: Provided is a mask blank surface treatment method for surface-treating, using a treatment liquid, a surface of a thin film, to be formed into a transfer pattern, of a mask blank having the thin film on a substrate. The thin film is made of a material that can be etched by ion-based dry etching. The concentration of an etching inhibitor contained in the treatment liquid is 0.3 ppb or less.

Abstract: To solve a problem of reduction in accumulated energy due to backward scattering, leading to degradation in CD linearity, which is caused when a generally used high-contrast resist is used in the manufacture of a reflective mask. A reflective mask blank for manufacturing a reflective mask includes a substrate, a multilayer reflective film which is formed on the substrate and adapted to reflect exposure light, and an absorber film which is formed on the multilayer reflective film and adapted to absorb the exposure light. A resist film for electron beam writing is formed on the absorber film and the contrast value ? of the resist film for electron beam writing is 30 or less.

Abstract: A photomask blank for use in the manufacture of a photomask adapted to be applied with exposure light having a wavelength of 200 nm or less has a thin film on a transparent substrate. The thin film is made of a material containing a transition metal, silicon, and carbon and comprising silicon carbide and/or a transition metal carbide.