Abstract: To provide a gas sensor apparatus capable of preventing clogging of a gas intake port due to particles, droplets, or the like, of a gas and maintaining measurement accuracy for a long time, a gas sensor apparatus 1 includes a housing 3. The housing 3 includes an expansion chamber 6 communicating with an air intake passage 2 via an air intake port 8, and a measurement chamber 5 communicating with the expansion chamber 6 via a communicating portion 7. A double squeezing structure including the gas intake port 8 and the communicating portion 7 is provided, and two stages of regions where the volume expands between the gas intake port 8 and the measurement chamber 5 are provided. As a result, the movement of the air in the measurement chamber 5 is decreased. It is possible to provide a structure in which the capacity of the gas intake port 8 is increased to avoid clogging of the gas intake port due to particles or droplets.

Abstract: The present invention makes it possible to improve the reliability of a semiconductor device. The semiconductor device has, over a semiconductor substrate, a pad electrode formed at the uppermost layer of a plurality of wiring layers, a surface protective film having an opening over the pad electrode, a redistribution line being formed over the surface protective film and having an upper surface and a side surface, a sidewall barrier film comprising an insulating film covering the side surface and exposing the upper surface of the redistribution line, and a cap metallic film covering the upper surface of the redistribution line. Then the upper surface and side surface of the redistribution line are covered with the cap metallic film or the sidewall barrier film and the cap metallic film and the sidewall barrier film have an overlapping section.

Abstract: A radioprotective unwoven fabric is a sheet in which metal fibers are three-dimensionally and randomly stacked, the metal fibers each comprising a metal material having a specific gravity higher than a specific gravity of lead. The metal fibers may comprise a tungsten wire.

Abstract: A gas sensor device of the present invention, aiming sufficient correction results of an internal combustion engine under different operation conditions, includes a concentration sensor for measuring the concentration of gas and a pressure sensor for measuring the pressure of the gas. The gas sensor device also includes a measuring chamber incorporating the concentration sensor and the pressure sensor, and a processing circuit unit that adjusts a signal of the concentration sensor using a signal of the pressure sensor. The processing circuit unit may preferably be provided with a response speed adjusting unit that brings the response speed of a detected signal of the pressure sensor close to the response speed of a detected signal of the concentration sensor.

Abstract: In order to achieve measurement with high precision by suitably correcting a measurement error, a hot-type fluid measurement device includes a module having a passage section and a circuit chamber, a sensor element disposed in the passage section, and a circuit element disposed in the circuit chamber. The circuit element includes a correction section that corrects flow rate information detected by the sensor element from temperature difference information of a temperature of a fluid and a temperature of the module, and at least one temperature of the temperature of the fluid or the temperature of the module.

Abstract: Provided is a sensor device that suppresses a malfunction caused by a negative surge or a voltage drop. A sensor device includes a sensor element having an electrical characteristic varying according to a physical amount, a signal processing circuit configured to process an output signal of the sensor element, a transistor element interposed between a power source terminal and the signal processing circuit, a resistive element configured to connect a drain and a gate of the transistor element, or a collector and a base of the transistor element, and an element having threshold voltage for connecting the gate or the base of the transistor element to a GND. The element regulates current flowing from the resistive element in a direction of the GND, in a case in which supply voltage to the signal processing circuit falls below the threshold voltage.

Abstract: In order to provide a thermal mass flowmeter which makes higher accuracy of gas flowrate measurement possible while reliability in the thermal mass flowmeter is ensured (while deterioration or breakage caused by droplet adhesion is prevented), the thermal mass flowmeter according to the present invention has a heating element for generating heat by conduction, a temperature detection bridge circuit for detecting a temperature of the heating element, and a sensor element driving circuit portion connected to the heating element and the temperature detection bridge circuit and executing conduction control to the heating element, in which the sensor element driving circuit portion has an output mechanism and an output impedance adjustment mechanism and the output impedance adjustment mechanism is disposed between the output mechanism and the heating element and its output impedance is higher than an electric resistance value of the heating element and less than 1 M?.

Abstract: A film formation method is one for forming an organic layer comprising a fluorine-containing resin on an inorganic layer (3) formed on a substrate and comprising an inorganic substance. In the method, for the formation of the inorganic layer, a reactive sputtering procedure using water vapor as a reactive gas is carried out to form the inorganic layer on the substrate. Subsequently, the organic layer is formed on the inorganic layer. A film formation device enables the implementation of the film formation method.

Abstract: A touch panel of the present invention includes: a cover substrate; a connector being provided on an area of the cover substrate other than a display area, and including a color layer and a shield layer, the shield layer being formed from a multilayer structure, the multilayer structure being configured so that a metal layer and a dielectric layer which is thicker than the metal layer are alternately laminated; and a touch panel substrate being arranged to face the cover substrate with the connector interposed therebetween.

Abstract: A substrate processing device includes a housing connected to ground, a cathode stage that supports a substrate, an anode unit, and a gas feeding unit that feeds gas toward the first plate. The cathode stage is applied with voltage for generating plasma. The anode unit includes a first plate including first through holes and a second plate including second through holes that are larger than the first through holes. The second plate is located between the first plate and the cathode stage. The first plate produces a flow of the gas through the first through holes. The gas that has passed through the first through holes flows through the second through holes into an area between the second plate and the cathode stage. A distance between the first plate and the second plate is 10 mm or greater and 50 mm or less.

Abstract: A bonding pad of a semiconductor chip in a QFP includes, in its exposed portion, a via disposition area comprising: a first segment that connects a corner and a first point; a second segment that connects the corner and a second point; and an arc that connects the first point and the second point and forms a convex shape toward the corner. Further, in a plan view of the bonding pad, at least a part of a via is disposed so as to overlap with the via disposition area.

Abstract: A metal fiber included in a fiber product includes a tungsten wire having a diameter less than or equal to 22 ?m. The tungsten wire may have, for example, a diameter less than or equal to 18 ?m. The tungsten wire may have, for example, a diameter within a range from 20% less than 13 ?m to 20% greater than 13 ?m. In addition, the tungsten wire may have, for example, a diameter greater than or equal to 5 ?m. Further, the tungsten wire may include, for example, pure tungsten. Moreover, the metal fiber may be, for example, a metal thread including a false-twisted yarn which is made of a chemical fiber and is wound.

Abstract: The purpose of the present invention is to provide a highly accurate and highly reliable physical quantity sensor wherein an error due to stress applied to a sensor element of the physical quantity sensor is reduced. This physical quantity sensor device is provided with: a hollow section formed in a Si substrate; an insulating film covering the hollow section; and a heating section formed in the insulating film. The sensor device is also provided with a detection element that detects the temperature of the insulating film above the hollow section, the detection element is provided with a first silicon element and a second silicon element, and the first silicon element and the second silicon element are doped with different impurities, respectively.

Abstract: Provided is an electronic device which can easily measure a standby current of an internal circuit of an electronic device after burn-in. The electronic device includes: a power source terminal; a regulator that generates a predetermined voltage from a voltage of the power source terminal; an internal circuit that is operated by an output voltage of the regulator; and a standby terminal through which the regulator and the internal circuit are set to a low power consumption state.

Abstract: Provided is a target substance measurement kit for detecting a target substance sensitively in a convenient manner. Provided is a target substance measurement kit including a capturing unit that captures a target substance contained in a liquid and a flow rate control unit that controls the rate of flow of the liquid in the capturing unit. The flow rate control unit is provided downstream from the capturing unit in the flow direction of the liquid.

Abstract: In conventional sensor devices, it has been difficult to achieve both EMC resistance and ESD resistance, which are required at the output terminals of an automobile sensor device. A sensor device 1 of the present embodiment comprises: a power supply terminal 2 that supplies power; a ground terminal 3; a sensor element 4, the electrical characteristics of which change in accordance with a physical quantity; a signal processing integrated circuit 5 that processes an output signal output from the sensor element 4; and an output terminal that outputs the output signal processed by the signal processing integrated circuit 5.

Abstract: Provided is a thermal type flowmeter in which contamination of a sensor element is reduced. The flowmeter includes a sensor element including a heating resistor formed in a thin film part, the thin film part being provided on a diaphragm formed on a substrate; a support member to locate the sensor element thereon; a secondary channel that includes part of the support member and takes in part of intake air flowing through an air intake pipeline; and a guide member provided on the support member or the sensor element that lies on a line L that extends along an air flow in the secondary channel and passing over the thin film part, the guide member allowing fine particles to be guided in a direction away from the line L, the fine particles coming together with an air flow along the surface of the support member or the sensor element.

Abstract: The purpose of the present invention is to provide a thermal flow-rate sensor that is capable of self-diagnosis. Provided is a thermal flow-rate sensor provided with a semiconductor element that detects a flow rate and that is equipped with electrode pads for electrical conduction with the outside, wherein at least two of the electrode pads are provided, and other electrode pads proximate to the electrode pads are arranged and have an electric potential beyond the scope of output to be used at the time of flow rate detection.

Abstract: Provided is a sensor device wherein malfunction due to a negative surge is suppressed. This sensor device is provided with: a sensor element wherein electrical characteristics change corresponding to physical quantities; a signal processing circuit that processes output signals of the sensor element; a first transistor element that supplies currents to the sensor element and the signal processing circuit; a control circuit that controls a base current of the first transistor element; a power supply terminal; and a ground terminal. The sensor device is characterized in that the control circuit is provided with a limiting section that limits a current flowing from the ground terminal toward a base terminal of the first transistor element.

Abstract: A substrate processing apparatus includes a sputter chamber, two targets located in the sputter chamber to form thin films on two film formation surfaces of a substrate through sputtering, and a transport mechanism that transports the substrate along a transport passage located in the sputter chamber. One of the two targets is located at one side of the transport passage opposed to one of the two film formation surfaces of the substrate at a front side with respect to a direction in which the substrate is transported. Another one of the two targets is located at another side of the transport passage opposed to another one of the two film formation surfaces of the substrate at a rear side with respect to the direction in which the substrate is transported.