Abstract: There is disclosed a method for producing a silicon single crystal in accordance with the Czochralski method wherein a crystal is pulled with controlling a temperature in a furnace so that &Dgr;G may be 0 or a negative value, where &Dgr;G is a difference between the temperature gradient Gc (° C./mm) at the center of a crystal and the temperature gradient Ge (° C./mm) at the circumferential portion of the crystal, namely &Dgr;G=(Ge−Gc), wherein G is a temperature gradient in the vicinity of a solid-liquid interface of a crystal from the melting point of silicon to 1400° C.

Abstract: There is disclosed a method for producing a silicon single crystal in accordance with the Czochralski method wherein a crystal is pulled with controlling a temperature in a furnace so that &Dgr;G may be 0 or a negative value, where &Dgr;G is a difference between the temperature gradient Gc (° C./mm) at the center of a crystal and the temperature gradient Ge (° C./mm) at the circumferential portion of the crystal, namely &Dgr;G=(Ge−Gc), wherein G is a temperature gradient in the vicinity of a solid-liquid interface of a crystal from the melting point of silicon to 1400° C.

Abstract: A method for producing a silicon monocrystal according to Czochralski method characterized in growing crystal with controlling a pulling rate between a transition pulling rate Pc at which there is caused a transition from a region where excess vacancies are present, but grown-in defect is not present to a region where excess interstitial silicon atoms are present, but an agglomerate thereof is not present, and a transition pulling rate Pi from a region where excess interstitial silicon atoms are present, but an agglomerate thereof is not present to a region where an agglomerate of interstitial silicon atoms is present. There are provided a method for producing a silicon monocrystal having no defect through the whole area of the wafer and having high quality wherein a deviation of amount of precipitated oxygen is small by pulling a crystal with controlling a pulling rate P as a general and interoperable valuable, and the silicon monocrystal produced thereby.

Abstract: A method and apparatus for producing crystals by the Czochralski method whereby the thermal history during crystal growth according to the CZ method can be controlled with ease and accuracy. The apparatus comprises a crucible for receiving a raw material, a heater for heating and melting the raw material, and a heat insulating cylinder disposed so as to surround the crucible and the heater, wherein a portion of the heat insulating cylinder that is located above an upper end of the heater is so configured that its inner diameter is larger than the outer diameter of the heater at its lower end, and that its inner diameter at its upper end is equal to or less than the inner diameter of the heater while its outer diameter is equal to or greater than the outer diameter of the heater. This apparatus is used to produce crystals and to control the temperature distribution inside the crystal producing apparatus or the thermal history of crystals.

Abstract: A crystal manufacturing apparatus includes a crucible for containing a material, a heater for heating and melting the material, and a heat insulating cylinder arranged so as to surround the crucible and the heater. The crystal manufacturing apparatus is operated in accordance with the Czochralski method. The heat insulating cylinder is arranged to be vertically movable. When two or more crystals are pulled within a single batch, the vertical position of the heat insulating cylinder is changed between the manufacture of the crystals, so that the thermal histories of the crystals are made different from one another. Moreover, when a crystal is pulled in accordance with the Czochralski method, the heat insulating cylinder is moved vertically while the crystal is being pulled.

Abstract: A puller and method for crystal growth using the Czochralski technique in which a temperature profile and a history of thermal conditions of a growing crystal is controllable with ease and a good accuracy, which puller comprises a crucible containing raw material, heater for melting by heating the raw material and a heat insulating cylinder surrounding them, the heat insulating cylinder being cross-sectionally divided by an annular separation gap or gaps into parts and which method is applicable to growth of such a single crystal as of silicon, germanium, GaP, GaAs or InP in the puller. Methods for controlling a temperature profile and a history of thermal conditions of a growing crystal using the czochralski technique in the puller.

Abstract: A puller and method for crystal growth using the Czochralski technique in which a temperature profile and a history of thermal conditions of a growing crystal is controllable with ease and a good accuracy, which puller comprises a crucible containing raw material, heater for melting by heating the raw material and a heat insulating cylinder surrounding them, the heat insulating cylinder being cross-sectionally divided by an annular separation gap or gaps into parts and which method is applicable to growth of such a single crystal as of silicon, germanium, GaP, GaAs or InP in the puller. Methods for controlling a temperature profile and a history of thermal conditions of a growing crystal using the czochralski technique in the puller.

Abstract: An improved method is proposed for the preparation of a semiconductor silicon single crystal of N-type by the Czochralski process, which is free from the problem of occurrence of delayed OSFs as defects in the single crystal even after prolonged storage at room temperature based on the discovery that presence of a certain amount of aluminum in the melt of silicon contained in a fused silica glass crucible acts to suppress occurrence of delayed OSFs as a type of defects in the single crystal while copper as an impurity acts adversely in this regard. With a known fact that an about 30 .mu.m thick inner surface layer of the crucible is melted down into the silicon melt during the single crystal pulling-up process, namely, the invention proposes use of a crucible of which the inner surface layer of 30 .mu.m thickness contains aluminum in an average concentration of 40 to 500 ppm by weight while the content of copper is as low as possible not to exceed 0.5 ppb by weight.

Abstract: A silicon single crystal having low defects, such as flow pattern defects and laser scattering tomography defects, and high dielectric breakdown strength in oxides and a method of producing the same using the Czochralski technique comprising steps of adjusting a first passage time of a growing crystal for a first temperature range of the melting point to 1,200.degree. C. so as to be 190 min. or shorter and adjusting a second passage time thereof for a second temperature range of 1,150.degree. C. to 1,080.degree. C. so as to be 60 min. or longer during crystal growth.

Abstract: Proposed is an improvement in the method and single crystal growing chamber for the preparation of a single crystal rod of silicon by the Czochralski method, according to which the distance between the surface of the melt of silicon contained in a crucible and the lower surface of the top wall of the crystal growing chamber is equal to or larger than the diameter of the crucible and the heat-insulating cylinder surrounding the crucible containing the melt of silicon and the heater has such a height as to reach the lower surface of the top wall of the chamber so as to keep the single crystal rod under growing is kept at a temperature not lower than 700.degree. C. until reaching the lower surface of the top wall of the chamber thereby decreasing the density of the crystal defects of BMD type in the seed end of the single crystal rod as grown so that the uniformity in the distribution of BMD density is increased throughout the single crystal rod.

Abstract: An improvement is proposed in the single crystal growing process of semiconductor silicon in the Czochralski process to obtain a silicon single crystal having a greatly decreased number of crystal defects without affecting the productivity. The improvement can be accomplished by an adequate arrangement of the cooling zone of the single crystal growing puller to have such a temperature distribution that the time taken by the growing single crystal to pass through the temperature range from the melting point of silicon to 1200.degree. C. is from 50 minutes to 200 minutes and the time taken by the growing single crystal to pass through the temperature range from 1200.degree. C. to 1000.degree. C. does not exceed 130 minutes.

Abstract: An improved method is proposed for the preparation of a semiconductor silicon single crystal of N-type by the Czochralski process, which is free from the problem of occurrence of delayed OSFs as defects in the single crystal even after prolonged storage at room temperature based on the discovery that presence of a certain amount of aluminum in the melt of silicon contained in a fused silica glass crucible acts to suppress occurrence of delayed OSFs as a type of defects in the single crystal while copper as an impurity acts adversely in this regard. With a known fact that an about 30 .mu.m thick inner surface layer of the crucible is melted down into the silicon melt during the single crystal pulling-up process, namely, the invention proposes use of a crucible of which the inner surface layer of 30 .mu.m thickness contains aluminum in an average concentration of 40 to 500 ppm by weight while the content of copper is as low as possible not to exceed 0.5 ppb by weight.