Abstract: A developing device includes an accommodating portion for accommodating toner, a developing roller and a stirring member. The developing device is for use with an image forming apparatus and detachably mounts a replenishing container for replenishing the toner. The accommodating portion includes a receiving opening through which the toner replenished from the accommodating portion is received in the accommodating portion, the receiving opening being provide on a first end side of the accommodating portion with respect to a rotational axis direction of the developing roller. An opening area of the receiving opening when the developing device is viewed in the rotational direction is wider than the opening area of the receiving opening when viewed in a direction perpendicular to the rotational axis direction.

Abstract: Provided is a power conversion circuit, including: a first switching element and a second switching element connected in parallel to each other; and a control unit configured to control turn-on/off of each of the switching elements, wherein a current value at a cross point of current-voltage characteristics when a forward current flows through the first switching element and current-voltage characteristics when a current flows through the second switching element is greater than a rated current value of the power conversion circuit.

Abstract: An image forming apparatus includes a first unit including an image bearing member and a second unit. The second unit includes a developing roller to supply the toner to the image bearing member, a mounting portion in which the replenishing container is dismountably mounted and an accommodating portion to accommodate the toner replenished from the replenishing container. The second unit is movable between a first position where the developing roller contacts the image bearing member and a second position where the developing roller separates from the image bearing member. When a moving direction in which the second unit moves from the first position toward the second position is defined as a separating direction, the second unit is urged in the separating direction by a force which the mounting portion receives from the replenishing container when the replenishing container is mounted to the mounting portion.

Abstract: Provided a semiconductor device includes at least: a crystalline oxide semiconductor layer including a channel layer and a drift layer; and a gate electrode arranged over the channel layer across a gate insulating film, and has a current blocking layer between the channel layer and the drift layer. The semiconductor device is characterized in that the drift layer contains a first crystalline oxide as a major component, the current blocking layer contains a second crystalline oxide as a major component, and the first crystalline oxide and the second crystalline oxide have different compositions.

Abstract: Provided a semiconductor device includes at least: a crystalline oxide semiconductor layer including a channel layer, a drift layer, and a source region; a gate electrode arranged over the channel layer across a gate insulating film; a current blocking region arranged between the channel layer and the drift layer; and a source electrode provided on the source region. The current blocking region is composed of a high-resistance layer. The source electrode forms a contact with the current blocking region.

Abstract: A NbTi superconducting multicore wire includes a core portion and a first barrier layer arranged around the core portion and composed of a first copper alloy including at least one element selected from Ni or Mn. A filament assembly arranged around the first barrier layer includes NbTi filament assemblies each including at least seven NbTi filaments, embedded in a matrix of a second copper alloy including at least one element selected from Ni or Mn. A second barrier layer is arranged around the filament assembly and composed of the first copper alloy, and a stabilizing layer arranged around the second barrier layer and composed of metal. The NbTi filaments are arranged in circular shapes each having a different diameter, centering on one NbTi filament, and NbTi filaments arranged in a circular shape in an outermost circle being arranged at approximately equal intervals along a circumferential direction.

Abstract: A claw gaming machine may comprise a cabinet, a claw assembly, prize objects, and a shooter unit. The machine may be configured to: determine an outcome of a claw game; allow an input device to control the claw assembly; end the claw game when the claw assembly does not pick up a prize object and the determined outcome is a losing outcome; cause the claw assembly to move and release the picked-up object away from the shooter unit when the claw assembly does pick-up a prize object and the determined outcome is a losing outcome, cause the claw assembly to drop the picked-up object on the shooter unit when the claw assembly picks-up the object and the determined outcome is a winning outcome; and cause a winning game presentation display when the claw assembly does not pick up a prize object and the determined outcome is a winning outcome.

Abstract: Provided is a semiconductor device, including: a gate electrode having at least a part buried in a semiconductor layer; a deep p layer having at least a part buried in the semiconductor layer to a same depth as a buried lower end portion of the gate electrode or a position deeper than the buried lower end portion; and a channel layer, wherein: the deep p layer is formed by a crystalline oxide semiconductor; and a carrier concentration of the deep p layer is higher than a carrier concentration of the channel layer.

Abstract: A claw gaming machine may comprise a cabinet, a claw assembly, prize objects, and a shooter unit. The machine may be configured to: determine an outcome of a claw game; allow an input device to control the claw assembly; end the claw game when the claw assembly does not pick up a prize object and the determined outcome is a losing outcome; cause the claw assembly to move and release the picked-up object away from the shooter unit when the claw assembly does pick-up a prize object and the determined outcome is a losing outcome, cause the claw assembly to drop the picked-up object on the shooter unit when the claw assembly picks-up the object and the determined outcome is a winning outcome; and cause a winning game presentation display when the claw assembly does not pick up a prize object and the determined outcome is a winning outcome.

Abstract: The disclosure provides a semiconductor apparatus capable of keeping a semiconductor characteristics and realizing excellent semiconductor properties even when using an n type semiconductor (gallium oxide, for example) having a low loss at a high voltage and having much higher dielectric breakdown electric field strength than SiC. A semiconductor apparatus includes a gate electrode and a channel layer formed of a channel directly or through other layers on a side wall of the gate electrode, and wherein a portion of or whole the channel layer may be a p type oxide semiconductor (iridium oxide, for example).

Abstract: A semiconductor device including a semiconductor element is provided. The semiconductor element includes a saturation current suppression layer formed above a drift layer and including electric field block layers arranged in a stripe manner and JFET portions arranged in a stripe manner. The electric field block layers and the JFET portions are alternately arranged. The semiconductor element includes trench gate structures. A longer direction of the trench gate structure intersects with a longer direction of the electric field block layer and a longer direction of JFET portion. The JFET portion includes a first layer having a first conductivity type impurity concentration larger than the drift layer and a second layer formed above the first layer and having a first conductivity type impurity concentration smaller than the first layer.

Abstract: A semiconductor apparatus capable of reducing the leakage current in the reverse direction, and keeping characteristics thereof, even when using n type semiconductor (gallium oxide, for example) or the like having a low-loss at a high voltage and having much higher dielectric breakdown electric field strength than SiC is provided. A semiconductor apparatus includes a crystalline oxide semiconductor having a corundum structure as a main component, and an electric field shield layer and a gate electrode that are respectively laminated directly or through other layers on the n type semiconductor layer, wherein the electric field shield layer includes a p type oxide semiconductor, and is embedded in the n type semiconductor layer deeper than the gate electrode.

Abstract: A precursor for Nb3Sn single-core superconducting wire includes a Sn-based wire rod, a first Cu-based tube covering an outer circumferential surface of the Sn-based wire rod, an Nb-based tube covering an outer surface of the first Cu-based tube, and a second Cu-based tube covering an outer surface of the Nb-based tube. The Sn-based wire rod contains a matrix phase and at least one kind of hard phases that is harder than the matrix phase. In a cross section parallel to a longitudinal direction of the precursor for Nb3Sn single-core superconducting wire, a maximum dimension of the hard phases in a width direction perpendicular to the longitudinal direction is 50% or less of a minimum dimension in the width direction of the Sn-based wire rod and/or is equal to or smaller than a minimum thickness in the width direction of the Nb-based tube.

Abstract: The superconducting coil includes: a winding frame; and at least two superconducting rectangular wire layers provided in such a manner that a superconducting rectangular wire is spirally wound on an outer surface of the frame such that wires adjacent to each other in an axial direction of the frame are arranged side by side and separated, the wire including an NbTi-based or Nb3Sn-based wire having a surface coated with copper or copper alloy, in which at least a thermoplastic fusible resin is provided in a separated section between the adjacent wires, and when viewed in a cross section including an axis of the frame, at least one of voids that are partitionable on outer surfaces of a total of three wires and a total of four wires located on the two adjacent layers and adjacent to each other are 4% or less in terms of a void ratio (V1).

Abstract: A semiconductor device with enhanced semiconductor characteristics that is useful for power devices. A semiconductor device, including: an n-type semiconductor layer; an electrode; two or more p-type semiconductors provided between the n-type semiconductor layer and the electrode, the n-type semiconductor layer containing a corundum-structured crystallin oxide semiconductor as a major component, a number of the two or more p-type semiconductor that is equal to or more than three, and the two or more p-type semiconductors that are embedded in the n-type semiconductor layer.

Abstract: A semiconductor device with an enhanced semiconductor characteristics that is useful for power devices. A semiconductor device including: a semiconductor region; a barrier electrode arranged on the semiconductor region; and two or more adjustment regions of barrier height that are on a surface of the semiconductor region and arranged between the semiconductor region and the barrier electrode, the adjustment regions are configured such that barrier height at an interface between the adjustment regions and the barrier electrode is higher than barrier height at an interface between the semiconductor region and the barrier electrode.

Abstract: Provided is a semiconductor device comprising at least, a high-resistance oxide film, which is placed in a direction in which a current flows, the high-resistance oxide film having a resistance of 1.0×106 ?·cm or higher. A semiconductor device comprising at least, a gate electrode; a source electrode; a drain electrode; and a high-resistance oxide film, which is placed between the source electrode and the drain electrode and has a resistance of 1.0×106 ?·cm or higher. A semiconductor device comprising at least, a gate electrode; a source electrode; a drain electrode; a high-resistance oxide film; and a substrate with the high-resistance oxide film being placed between the source electrode or/and the drain electrode and the substrate and having a resistance of 1.0×106 ?·cm or higher.

Abstract: There is provided a semiconductor device comprising at least, a crystalline oxide semiconductor layer which has a band gap of 4.5 eV or more; and a field-effect mobility of 10 cm2V·s or higher.

Abstract: A semiconductor device including at least a crystalline oxide semiconductor layer, which has a band gap of 3 eV or more and a field-effect mobility of 30 cm2/V·s or higher.

Abstract: A resin coated superconducting wire includes a matrix resin including a synthetic resin material, and a superconducting wire in the matrix resin. In a transverse cross section of the resin coated superconducting wire, a cross section area of the matrix resin is equal to or larger than the cross section area of the superconducting wire.