Abstract: A semiconductor device is provided with a semiconductor substrate and a trench gate. The semiconductor substrate is provided with a drift region of a first conductive type, wherein the drift region is in contact with the trench gate; a body region of a second conductive type, wherein the body region is disposed above the drift region and is in contact with the trench gate; a source region of the first conductive type, wherein the source region is disposed above the body region, exposed on the front surface of the semiconductor substrate and is in contact with the trench gate; and a front surface region of the second conductive type, wherein the front surface region is disposed above the source region, exposed on the front surface of the semiconductor substrate and is in contact with the trench gate.

Abstract: Salivary biomarker characterized as low-molecular-weight compounds named metabolites or combinations of these biomarkers are used for detecting cancers. The salivary biomarker for cancer can be, for example, a combination of creatinine, N1-acetylspermidine, ?-aminoadipic acid, N-acetylneuraminic acid, and 1,3-diaminopropane. Due to this configuration, the early detection of pancreatic cancer, breast cancer, oral cancer, and the like is possible in a healthy subject even with saliva having large concentration fluctuations.

Abstract: In a plane view of the front surface of the semiconductor substrate, the source region and the first contact region are arranged adjacent to each other in a direction along the gate trench in an area being in contact with a side surface of the gate trench, and the second contact region is arranged adjacent to the source region and the first contact region in an area apart from the gate trench. The impurity concentration of the first contact region is lower than the impurity concentration of the second contact region.

Abstract: A semiconductor device is provided with a semiconductor substrate in which a power semiconductor element part and a temperature sensing diode part are provided. The temperature sensing diode part includes a first semiconductor region, a second semiconductor region, a first base region, and a first drift region. In the semiconductor substrate, an isolation trench is formed, which passes through the first base region, extends to the first drift region, and surrounds an outer periphery of the temperature sensing diode part. At least a part of one of side walls of the isolation trench is in contact with the power semiconductor element part, and the other side wall of the isolation trench is in contact with the temperature sensing diode part.

Abstract: In the case of performing duplex printing on a continuous sheet, by setting a length of a non-image area to an optimum length, both of mark detection having high reliability and the suppression of a sheet consumption amount are achieved. For this purpose, when duplex printing of a plurality of images on front and back surfaces of the continuous sheet is performed, on the basis of a length of the image to be printed precedently to a non-image area W3 on the second surface, the length of the non-image area common to the front and back surface is set.

Abstract: An insulated gate type switching device includes: a first region being of a first conductivity type; a body region being of a second conductivity type and in contact with the first region; a second region being of the first conductivity type and separated from the first region by the body region; an insulating film being in contact with the first region, the body region and the second region; and a gate electrode facing the body region via the insulating film. The body region includes a first body region and a second body region. The first body region has a theoretical threshold level Vth larger than that of the second body region.

Abstract: An apparatus includes a recording head arranged so as to oppose a sheet moving in a first direction, in which a plurality of first nozzle chips and a plurality of second nozzle chips each having a nozzle array are arranged as different arrays in a second direction crossing the first direction, and in which the first nozzle chips and the second nozzle chips adjacent to each other are shifted from each other in the second direction, a first suction unit opposed to the first nozzle chips and configured to suction ink from a part of the nozzle arrays included in the first nozzle chips, a second suction unit opposed to the second nozzle chips and configured to suction ink from a part of the nozzle arrays included in the second nozzle chips, a suction holder configured to retain the first suction unit and the second suction unit, and a movement mechanism configured to cause relative movement between the recording head and the suction holder in the second direction, wherein the first suction unit and the second suct

Abstract: A method for producing a composite superconductor includes: a structure forming process of forming a structure including a metal covering member (20) including at least one to-be-joined portion, a superconductor (30) arranged inside the metal covering member, and a reinforcing member (40) arranged between the superconductor (30) and the at least one to-be-joined portion; and a joining process of joining thereafter the at least one to-be-joined portion.

Abstract: A semiconductor device has a stacked structure in which a p-GaN layer, an SI-GaN layer, and an AlGaN layer are stacked, and has a gate electrode that is formed at a top surface side of the AlGaN layer. A band gap of the AlGaN layer is wider than a band gap of the p-GaN layer and the SI-GaN layer. Moreover, impurity concentration of the SI-GaN layer is less than 1×1017 cm?3. Semiconductor devices including III-V semiconductors may have a stable normally-off operation.

Abstract: In a silicon carbide semiconductor device, a plurality of trenches has a longitudinal direction in one direction and is arranged in a stripe pattern. Each of the trenches has first and second sidewalls extending in the longitudinal direction. The first sidewall is at a first acute angle to one of a (11-20) plane and a (1-100) plane, the second sidewall is at a second acute angle to the one of the (11-20) plane and the (1-100) plane, and the first acute angle is smaller than the second acute angle. A first conductivity type region is in contact with only the first sidewall in the first and second sidewalls of each of the trenches, and a current path is formed on only the first sidewall in the first and second sidewalls.

Abstract: A sheet conveyance apparatus including a conveyance unit configured to convey a sheet, wherein the conveyance unit includes a slanting surface having an inclination with respect to a horizontal surface and a conveyance surface that forms, together with the slanting surface, a space that becomes narrower downward in the vertical direction and which moves in a predetermined direction, and conveys the sheet in a predetermined direction by the movement of the conveyance surface.

Abstract: A sheet conveyance apparatus including a conveyance unit configured to convey a sheet, wherein the conveyance unit includes a slanting surface having an inclination with respect to a horizontal surface and a conveyance surface that forms, together with the slanting surface, a space that becomes narrower downward in the vertical direction and which moves in a predetermined direction, and conveys the sheet in a predetermined direction by the movement of the conveyance surface.

Abstract: Disclosed is a composite superconductor comprising a superconductor and a metal member. The metal member is composed of one or more members to be joined together in such manner that the one or more members cover the superconductor, and at least one member is made of aluminum or an aluminum alloy.

Abstract: A semiconductor device disclosed in this specification includes a p+ contact region, an n+ source region, a p? base region, an n? drift region, a gate electrode, an insulator, a p+ electric field alleviating layer, and a p? positive hole extraction region. The electric field alleviating layer has same impurity concentration as the base region or higher, contacts a lower surface of the base region, and is formed in a same depth as the gate trench or in a position deeper than the gate trench. A positive hole extraction region extends to contact the electric field alleviating layer from a position to contact an upper surface of a semiconductor substrate or a first semiconductor region, and extracts a positive hole that is produced in the electric field alleviating layer at the avalanche breakdown to the upper surface of the semiconductor substrate.

Abstract: A method of manufacturing a semiconductor device includes forming an ohmic electrode in a first area on one of main surfaces of a silicon carbide layer, siliciding the ohmic electrode, and forming a Schottky electrode in a second area on the one of the main surfaces of the silicon carbide layer with self alignment. The second area is exposed where the ohmic electrode is not formed.

Abstract: An SiC semiconductor device has a p type region including a low concentration region and a high concentration region filled in a trench formed in a cell region. A p type column is provided by the low concentration region, and a p+ type deep layer is provided by the high concentration region. Thus, since a SJ structure can be made by the p type column and the n type column provided by the n type drift layer, an on-state resistance can be reduced. As a drain potential can be blocked by the p+ type deep layer, at turnoff, an electric field applied to the gate insulation film can be alleviated and thus breakage of the gate insulation film can be restricted. Therefore, the SiC semiconductor device can realize the reduction of the on-state resistance and the restriction of breakage of the gate insulation film.

Abstract: A manufacturing method of a silicon carbide semiconductor device includes: forming a drift layer on a silicon carbide substrate; forming a base layer on or in a surface portion of the drift layer; forming a source region in a surface portion of the base layer; forming a trench to penetrate the base layer and to reach the drift layer; forming a gate electrode on a gate insulation film in the trench; forming a source electrode electrically connected to the source region and the base layer; and forming a drain electrode on a back surface of the substrate. The forming of the trench includes: flattening a substrate surface; and etching to form the trench after flattening.

Abstract: An inkjet recording apparatus stabilizes an ink discharge amount of a line head, while suppressing an ink supply amount of a circulation route, thereby performing high quality image recording. The inkjet recording apparatus includes a first flow path configured to supply ink from an ink tank to a first discharge port group, a second flow path configured to supply ink from the ink tank to a second discharge port group, and a control unit configured to control an ink supply amount of at least one of the first flow path and the second flow path according to the passing position of a recording medium with respect to the line head.

Abstract: A holder that holds a line recording head is displaced in a sheet width direction against the urging force of an elastic portion to bring an abutment portion of the holder into contact with one of a plurality of positioning surfaces provided at a reference portion of a sheet conveying mechanism. The holder is positioned and fixed to the reference portion, with the urging force exerted thereto.

Abstract: A compound superconducting wire 10 includes a reinforcement portion 12 and a compound superconductor 11. In the reinforcement portion 12, an assembly of plural reinforcement elements 4 are disposed. The reinforcement elements 4 each include plural reinforcement filaments 1 disposed in a stabilizer 2, and a stabilizing layer 3 at the outer periphery thereof. The reinforcement filaments 1 each mainly contain one or more metals selected from the group consisting of Nb, Ta, V, W, Mo, Fe, and Hf, an alloy consisting of two or more metals selected from the aforementioned group, or an alloy consisting of copper and one or more metals selected from the aforementioned group.