Abstract: To provide a motor system that can control the position of a control object in multiple directions while suppressing the number of required switching elements. A motor system includes: a power conversion device including first, second, and third up-down arms each including two switching elements connected in series; a control object; and a first load including a magnetic pole tooth facing the control object, and a winding wound around the magnetic pole tooth. The motor system includes a second load including two magnetic pole teeth facing each other in a second direction with the control object therebetween, and a winding wound around one or both of the magnetic pole teeth. The power conversion device provides a force with respect to a first direction to the control object through an output to the first load, and provides a force with respect to the second direction to the control object through an output to the second load.

Abstract: Provided are: a linear motor that has increased compactness and that can effectively use magnetic flux; and an apparatus provided with the linear motor. The linear motor has a top mobile element and a bottom mobile element provided below the top mobile element, and an armature has: a top first set of magnetic pole teeth comprising two magnetic pole teeth opposing each other in the vertical direction across a space through which the top mobile element can move in a reciprocating manner; and a bottom first set of magnetic pole teeth comprising two magnetic pole teeth opposing each other in the vertical direction across a space through which the bottom mobile element can move in a reciprocating manner.

Abstract: To improve crystallinity of an oxide semiconductor. To provide a crystalline oxide semiconductor film in which a crystallized region extends to the interface with a base or the vicinity of the interface, and to provide a method for forming the oxide semiconductor film. An oxide semiconductor film containing indium, gallium, and zinc is formed, and the oxide semiconductor film is irradiated with an energy beam, thereby being heated. Note that the oxide semiconductor film includes a c-axis aligned crystal region or microcrystal.

Abstract: Between a source electrode (25) of a main device (24) and a current sensing electrode (22) of a current detection device (21), a resistor for detecting current is connected. Dielectric withstand voltage of gate insulator (36) is larger than a product of the resistor and maximal current flowing through the current detection device (21) with reverse bias. A diffusion length of a p-body region (32) of the main device (24) is shorter than that of a p-body (31) of the current detection device (21). A curvature radius at an end portion of the p-body region (32) of the main device (24) is smaller than that of the p-body (31) of the current detection device (21). As a result, at the inverse bias, electric field at the end portion of the p-body region (32) of the main device (24) becomes stronger than that of the p-body region (31) of the current detection device (21). Consequently, avalanche breakdown tends to occur earlier in the main device 24 than the current detection device (21).

Abstract: The slave is used in an energy management system for collecting meter-reading data from an energy meter for measuring an amount of electric energy supplied from a power source to a predetermined place through a distribution line. The slave includes: a first interface unit configured to communicate with an upper device; a second interface unit configured to communicate with an electric appliance installed in the predetermined place; and a third interface unit configured to perform first wireless communication using an electric wave with a communication terminal. One of the first interface unit and the second interface unit is a wired communication unit configured to perform power line communication using the distribution line, and the other of the first interface unit and the second interface unit is a wireless communication unit configured to perform second wireless communication using an electric wave.

Abstract: In an oxide semiconductor film formed over an insulating surface, an amorphous region remains in the vicinity of the interface with the base, which is thought to cause a variation in the characteristics of a transistor and the like. A base surface or film touching the oxide semiconductor film is formed of a material having a melting point higher than that of a material used for the oxide semiconductor film. Accordingly, a crystalline region is allowed to exist in the vicinity of the interface with the base surface or film touching the oxide semiconductor film. An insulating metal oxide is used for the base surface or film touching the oxide semiconductor film. The metal oxide used here is an aluminum oxide, gallium oxide, or the like that is a material belonging to the same group as the material of the oxide semiconductor film.

Abstract: A refrigerant compressor includes a sealed case, which contains a compression mechanism, a motor part, and an oil reservoir formed in a lower portion. An oil supply pipe links the oil reservoir and a suction side of the compression mechanism and introduces oil in the oil reservoir to the suction side. The amount of oil supply provided to the suction side is adjusted by detecting the rotational speed of the motor part, such that the amount of oil supply provided to the suction side of the oil supply pipe decreases as the rotational speed of the motor part increases.

Abstract: Between a source electrode (25) of a main device (24) and a current sensing electrode (22) of a current detection device (21), a resistor for detecting current is connected. Dielectric withstand voltage of gate insulator (36) is larger than a product of the resistor and maximal current flowing through the current detection device (21) with reverse bias. A diffusion length of a p-body region (32) of the main device (24) is shorter than that of a p-body (31) of the current detection device (21). A curvature radius at an end portion of the p-body region (32) of the main device (24) is smaller than that of the p-body (31) of the current detection device (21). As a result, at the inverse bias, electric field at the end portion of the p-body region (32) of the main device (24) becomes stronger than that of the p-body region (31) of the current detection device (21). Consequently, avalanche breakdown tends to occur earlier in the main device 24 than the current detection device (21).

Abstract: A semiconductor device in which an IGBT region and a diode region are formed on one semiconductor substrate is disclosed. The IGBT region includes: a body layer of a first conductivity type that is formed on a front surface of the semiconductor substrate; a body contact layer of the first conductivity type that is partially formed on a front surface of the body layer and has a higher impurity concentration of the first conductivity type than the body layer; an emitter layer of a second conductivity type that is partially formed on the front surface of the body layer; a drift layer; a collector layer; and a gate electrode. In the semiconductor device, a part of the body contact layer placed at a long distance from the diode region is made larger than a part of the body contact layer placed at a short distance from the diode region.

Abstract: A linear motor includes an armature with two magnetic poles arranged in the Z direction, and winding wires wound around the two magnetic poles, respectively, and a mover with a permanent magnet, which moves relative to the armature in the Z direction. A first auxiliary magnetic pole is disposed between the two magnetic poles, and a bridge is disposed between the first auxiliary magnetic pole and the magnetic pole. The two winding wires are electrically coupled.

Abstract: A transistor including an oxide semiconductor film, which has stable electric characteristics is provided. A transistor including an oxide semiconductor film, which has excellent on-state characteristics is also provided. A semiconductor device in which an oxide semiconductor film having low resistance is formed and the resistance of a channel region of the oxide semiconductor film is increased. Note that an oxide semiconductor film is subjected to a process for reducing the resistance to have low resistance. The process for reducing the resistance of the oxide semiconductor film may be a laser process or heat treatment at a temperature higher than or equal to 450° C. and lower than or equal to 740° C., for example. A process for increasing the resistance of the channel region of the oxide semiconductor film having low resistance may be performed by plasma oxidation or implantation of oxygen ions, for example.

Abstract: A semiconductor device in which an IGBT region and a diode region are formed on one semiconductor substrate is disclosed. The IGBT region includes: a body layer of a first conductivity type that is formed on a front surface of the semiconductor substrate; a body contact layer of the first conductivity type that is partially formed on a front surface of the body layer and has a higher impurity concentration of the first conductivity type than the body layer; an emitter layer of a second conductivity type that is partially formed on the front surface of the body layer; a drift layer; a collector layer; and a gate electrode. In the semiconductor device, a part of the body contact layer placed at a long distance from the diode region is made larger than a part of the body contact layer placed at a short distance from the diode region.

Abstract: The slave is used in an energy management system for collecting meter-reading data from an energy meter for measuring an amount of electric energy supplied from a power source to a predetermined place through a distribution line. The slave includes: a first interface unit configured to communicate with an upper device; a second interface unit configured to communicate with an electric appliance installed in the predetermined place; and a third interface unit configured to perform first wireless communication using an electric wave with a communication terminal. One of the first interface unit and the second interface unit is a wired communication unit configured to perform power line communication using the distribution line, and the other of the first interface unit and the second interface unit is a wireless communication unit configured to perform second wireless communication using an electric wave.

Abstract: When a semiconductor substrate of a semiconductor device is viewed from above, an isolation region, an IGBT region, and a diode region are all formed adjacent to each other. A deep region that is connected to a body region and an anode region is formed in the isolation region. A drift region is formed extending across the isolation region, the IGBT region, and the diode region, inside the semiconductor substrate. A collector region that extends across the isolation region, the IGBT region and the diode region, and a cathode region positioned in the diode region, are formed in a region exposed on a lower surface of the semiconductor substrate. A boundary between the collector region and the cathode region is in the diode region, in a cross-section that cuts across a boundary between the isolation region and the diode region, and divides the isolation region and the diode region.

Abstract: A transistor including an oxide semiconductor film, which has stable electric characteristics is provided. A transistor including an oxide semiconductor film, which has excellent on-state characteristics is also provided. A semiconductor device in which an oxide semiconductor film having low resistance is formed and the resistance of a channel region of the oxide semiconductor film is increased. Note that an oxide semiconductor film is subjected to a process for reducing the resistance to have low resistance. The process for reducing the resistance of the oxide semiconductor film may be a laser process or heat treatment at a temperature higher than or equal to 450° C. and lower than or equal to 740° C., for example. A process for increasing the resistance of the channel region of the oxide semiconductor film having low resistance may be performed by plasma oxidation or implantation of oxygen ions, for example.

Abstract: A refrigerant compressor (100) includes: a sealed vessel (103); a compression mechanism (101) that sucks refrigerant, sucked in the sealed vessel (103), for compression; a motor (102) that drives the compression mechanism (101); a suction pipe (104) for sucking the refrigerant into the sealed vessel (103) when sucking the refrigerant; a cover (117a) arranged to face an outlet of the suction pipe (104), to force the refrigerant sucked through the suction pipe (104) to collide against the cover for gas-liquid separation, and to allow liquid refrigerant from the separation to drop on a coil (126) of the motor (102); and a suction passage (118) that introduces gas refrigerant from the gas-liquid separation, for which the refrigerant sucked through the suction pipe is forced to collide against the cover (117a), to an inlet of the compression chamber provided in the compression mechanism (101).

Abstract: A transistor including an oxide semiconductor film, which has stable electric characteristics is provided. A transistor including an oxide semiconductor film, which has excellent on-state characteristics is also provided. A semiconductor device in which an oxide semiconductor film having low resistance is formed and the resistance of a channel region of the oxide semiconductor film is increased. Note that an oxide semiconductor film is subjected to a process for reducing the resistance to have low resistance. The process for reducing the resistance of the oxide semiconductor film may be a laser process or heat treatment at a temperature higher than or equal to 450° C. and lower than or equal to 740° C., for example. A process for increasing the resistance of the channel region of the oxide semiconductor film having low resistance may be performed by plasma oxidation or implantation of oxygen ions, for example.

Abstract: When a semiconductor substrate of a semiconductor device is viewed from above, an isolation region, an IGBT region, and a diode region are all formed adjacent to each other. A deep region that is connected to a body region and an anode region is formed in the isolation region. A drift region is formed extending across the isolation region, the IGBT region, and the diode region, inside the semiconductor substrate. A collector region that extends across the isolation region, the IGBT region and the diode region, and a cathode region positioned in the diode region, are formed in a region exposed on a lower surface of the semiconductor substrate. A boundary between the collector region and the cathode region is in the diode region, in a cross-section that cuts across a boundary between the isolation region and the diode region, and divides the isolation region and the diode region.

Abstract: There is known a semiconductor device in which an IGBT structure is provided in an IGBT area and a diode structure is provided in a diode area, the IGBT area and the diode area are both located within a same substrate, and the IGBT area is adjacent to the diode area. In this type of semiconductor device, a phenomenon that carriers accumulated within the IGBT area flow into the diode area when the IGBT structure is turned off. In order to prevent this phenomenon, a region of shortening lifetime of carriers is provided at least in a sub-area that is within said IGBT area and adjacent to said diode area. In the sub-area, emitter of IGBT structure is omitted.

Abstract: The slave suitable for energy management systems in accordance with the present invention is a slave suitable for an energy management system for collecting, from an energy meter for measuring an amount of electric energy supplied from a power source to a predetermined place through a distribution line, meter-reading data including the amount of energy. The slave includes: a first interface unit configured to communicate with an upper device; a second interface unit configured to perform wireless communication using an electric wave with an electric appliance installed in the predetermined place; and a third interface unit configured to perform wireless communication using an electric wave with a communication terminal. The second interface unit and the third interface unit are configured to use the same protocol.