Abstract: A power semiconductor device includes a power module unit and a heat sink. An uneven portion is formed in a module base in the power module unit. The uneven portion includes a depression portion and a buffer depression portion. An uneven portion is formed in a heat sink base unit in the heat sink. The uneven portion and the uneven portion are fitted together by crimping so that the module base of the power module unit and a heat dissipation spreader of the heat sink are integrated. The buffer depression portion is left as a space.

Abstract: Provided is a polishing composition capable of polishing a layer containing an element in group 13 of the periodic table in a content of 40 mass % or more at a high polishing speed while reducing surface defects due to polishing. Provided is a polishing composition for use in polishing an object to be polished having a layer containing an element in group 13 of the periodic table in a content of 40 mass % or more, the polishing composition containing a cationically modified silica, a trialkylamine oxide, and an oxidizing agent, wherein the content of the trialkylamine oxide is 3 mass ppm or more and 40 mass ppm or less with respect to the total mass of the polishing composition, and the pH is less than 5.

Abstract: A high-strength cold-rolled steel sheet comprises: a chemical composition that contains C, Si, Mn, P, S, N, Al, Ti, Nb, and B with a balance consisting of Fe and inevitable impurities, and satisfies [mol % N]/[mol % Ti]<1; and a steel microstructure in which: an area fraction of ferrite is 12% or more and less than 30%; a total area fraction of tempered martensite and bainite is 55% or more and 85% or less; an area fraction of quenched martensite is 15% or less; an area fraction of retained austenite is 1% or more and 10% or less; an area fraction of low-Mn ferrite having a Mn concentration of 0.8×[% Mn] or less is 5% or more and 20% or less; a result of subtracting the area fraction of the low-Mn ferrite from the area fraction of the ferrite is 10% or more; an area fraction of a residual microstructure is less than 3%; and an average grain size of the low-Mn ferrite is 10 ?m or less.

Abstract: Provided is a means capable of polishing an organic material at a high polishing speed and reducing the number of scratches after polishing. The polishing composition of the present invention contains zirconia particles and a dispersing medium, in which the zirconia particles contain at least one of tetragonal zirconia and cubic zirconia, and an average secondary particle size of the zirconia particles is less than 80 nm.

Abstract: The present invention provides a method for producing an inorganic particle-containing slurry, by which the number of coarse particles can be sufficiently reduced. The present invention is a method for producing an inorganic particle-containing slurry, which comprises: a step of preparing an inorganic particle dispersion containing inorganic particles and a dispersing medium, and having a pH less than the isoelectric point of the inorganic particles; and a step of adding an alkaline compound to the inorganic particle dispersion in such a manner that the pH does not reach the isoelectric point of the inorganic particles.

Abstract: To provide means for improving a ratio of a polishing speed of SiOC to a polishing speed of SiN. There is provided a polishing composition containing: abrasive grains containing at least one kind of zirconia particles; a selection ratio improver containing at least one kind of a salt composed of a monovalent anion and a monovalent or higher valent cation and improving a ratio of a polishing speed of SiOC to a polishing speed of SiN; and a pH adjusting agent containing at least one kind of an acid, in which a pH is more than 3.0 and less than 7.0, and a zeta potential of the abrasive grain is a positive value.

Abstract: A high-strength cold-rolled steel sheet comprises: a chemical composition that contains C, Si, Mn, P, S, N, Al, Ti, Nb, and B with a balance consisting of Fe and inevitable impurities, and satisfies [mol % N]/[mol % Ti]<1; and a steel microstructure in which: an area fraction of ferrite is 30% or more and 60% or less; a total area fraction of tempered martensite and bainite is 35% or more and 65% or less; an area fraction of quenched martensite is 15% or less; an area fraction of retained austenite is 1% or more and 10% or less; an area fraction of low-Mn ferrite having a Mn concentration of 0.8×[% Mn] or less is 5% or more and 40% or less; a result of subtracting the area fraction of the low-Mn ferrite from the area fraction of the ferrite is 10% or more; an area fraction of a residual microstructure is less than 3%; and an average grain size of the low-Mn ferrite is 10 ?m or less.

Abstract: In a radio-frequency module, a hybrid filter includes an acoustic wave filter including at least one acoustic wave resonator, an inductor having a winding portion, and a capacitor. A plurality of outer electrodes of the acoustic wave filter includes a first input and output electrode connected to a first signal terminal, a second input and output electrode connected to a second signal terminal, and a ground electrode connected to a ground terminal. The inductor is disposed on a first major surface of a mounting substrate and is adjacent to the acoustic wave filter in plan view in a thickness direction of the mounting substrate. When viewed in a direction of a winding axis of the winding portion of the inductor, an inner part of the winding portion in the inductor does not overlap any of the first input and output electrode, the second input and output electrode, and ground electrode.

Abstract: Imaging and display system includes: a display; an optical system including a first mirror and a second mirror; a housing; a light-transmissive cover transparent to light and disposed to cover at least part of an opening of the housing; and a driver monitoring camera supported by a supporting body connected outside of the housing. First light emitted from the display passes through the light-transmissive cover via the optical system, and is reflected by a windshield toward a direction of the user. The driver monitoring camera captures an image of a driver shown on the light-transmissive cover by second light from a direction of the driver reflected by the windshield toward a direction of the light-transmissive cover.

Abstract: A power amplifier module includes a first transistor that amplifies and outputs a signal, a second transistor that supplies a bias current to a base of the first transistor, and a ballast resistor circuit that is disposed between the base and an emitter of the second transistor and that includes first and second resistive elements and a switching element. The first resistive element is arranged in series on a line connecting the base and the emitter. The first and second resistive elements are series-connected or parallel-connected. When the second resistive element is series-connected to the first transistor, the switching element is parallel-connected to the second resistive element. When the second resistive element is parallel-connected to the first transistor, the switching element is series-connected to the second resistive element. The switching element is switched on/off based on a collector current of the second transistor.

Abstract: A radio frequency module includes: a power amplifier; an inductor connected to the power amplifier; an external connection terminal that is connected to the power amplifier via the inductor and is configured to receive a power supply voltage from an outside source; a low-noise amplifier; a matching circuit connected to input of the low-noise amplifier; and a module substrate including a first principal surface and a second principal surface on opposite sides of the module substrate. The inductor is disposed on one of the first principal surface and the second principal surface, and the matching circuit is disposed on the other of the first principal surface and the second principal surface.

Abstract: A radio frequency module includes: a plurality of external connection terminals including at least one input terminal and at least one output terminal; at least one power amplifier; at least one low-noise amplifier; a first switch connected between the at least one input terminal and the at least one power amplifier; a second switch connected between the at least one output terminal and the at least one low-noise amplifier; and a module substrate including a first principal surface and a second principal surface on opposite sides of the module substrate. The first switch is disposed on one of the first principal surface and the second principal surface, and the second switch is disposed on the other of the first principal surface and the second principal surface.

Abstract: A radio-frequency module includes a module substrate having a first principal surface and a second principal surface on opposite sides of the module substrate, a power amplifier capable of amplifying a transmission signal, a low-noise amplifier capable of amplifying a reception signal, a first switch connected to an input terminal of the power amplifier and disposed on the second principal surface, a second switch connected to an output terminal of the low-noise amplifier and disposed on the second principal surface, and a first ground terminal disposed in a region that is on the second principal surface and that is between the first switch and the second switch in plan view of the module substrate.

Abstract: A radio-frequency module includes a module substrate having a first principal surface and a second principal surface on opposite sides of the module substrate, a power amplifier capable of amplifying a transmission signal, a low-noise amplifier capable of amplifying a reception signal, a first switch connected to an input terminal of the power amplifier and disposed on the second principal surface, a second switch connected to an output terminal of the low-noise amplifier and disposed on the second principal surface, and a first ground terminal disposed in a region that is on the second principal surface and that is between the first switch and the second switch in plan view of the module substrate.

Abstract: A radio frequency module includes: a power amplifier; an inductor connected to the power amplifier; an external connection terminal that is connected to the power amplifier via the inductor and is configured to receive a power supply voltage from an outside source; a low-noise amplifier; a matching circuit connected to input of the low-noise amplifier; and a module substrate including a first principal surface and a second principal surface on opposite sides of the module substrate. The inductor is disposed on one of the first principal surface and the second principal surface, and the matching circuit is disposed on the other of the first principal surface and the second principal surface.

Abstract: A radio frequency module includes: a plurality of external connection terminals including at least one input terminal and at least one output terminal; at least one power amplifier; at least one low-noise amplifier; a first switch connected between the at least one input terminal and the at least one power amplifier; a second switch connected between the at least one output terminal and the at least one low-noise amplifier; and a module substrate including a first principal surface and a second principal surface on opposite sides of the module substrate. The first switch is disposed on one of the first principal surface and the second principal surface, and the second switch is disposed on the other of the first principal surface and the second principal surface.

Abstract: A power amplifier module includes a first transistor that amplifies and outputs a signal, a second transistor that supplies a bias current to a base of the first transistor, and a ballast resistor circuit that is disposed between the base and an emitter of the second transistor and that includes first and second resistive elements and a switching element. The first resistive element is arranged in series on a line connecting the base and the emitter. The first and second resistive elements are series-connected or parallel-connected. When the second resistive element is series-connected to the first transistor, the switching element is parallel-connected to the second resistive element. When the second resistive element is parallel-connected to the first transistor, the switching element is series-connected to the second resistive element. The switching element is switched on/off based on a collector current of the second transistor.

Abstract: A steel sheet for a can having high strength, excellent ductility, and good corrosion resistance, and a method for manufacturing the steel sheet. The steel sheet has a chemical composition containing, by mass %, C: 0.020% or more and 0.130% or less, Si: 0.04% or less, Mn: 0.10% or more and 1.20% or less, P: 0.007% or more and 0.100% or less, S: 0.030% or less, Al: 0.001% or more and 0.100% or less, N: more than 0.0120% and 0.0200% or less, Nb: 0.0060% or more and 0.0300% or less, and Fe and inevitable impurities. An absolute value of a difference in an amount of solid solution Nb between a region from a surface to a position located at ? of a thickness and a region from a position located at ? of the thickness to a position located at 4/8 of the thickness is 0.0010 mass % or more.

Abstract: The present invention provides a polishing composition which is suitable for polishing an object to be polished having a layer containing a Group III-V compound, suppresses etching of the Group III-V compound, and is capable of polishing at a high polishing speed. The polishing composition according to the present invention is a polishing composition used for polishing an object to be polished having a layer containing a Group III-V compound and contains abrasive grains, an oxidizer, and an anionic surfactant.

Abstract: Provided are a high-strength steel sheet for containers and a method for producing the high-strength steel sheet. The high-strength steel sheet for containers has a composition containing, by mass, C: 0.0010% to 0.10%, Si: 0.04% or less, Mn: 0.10% to 0.80%, P: 0.007% to 0.100%, S: 0.10% or less, Al: 0.001% to 0.100%, N: 0.0010% to 0.0250%, and the balance being Fe and inevitable impurities. The difference between the dislocation density at the uppermost layer of the high-strength steel sheet in the thickness direction and the dislocation density at a depth of ¼ of the thickness of the high-strength steel sheet from the surface is 1.94×1014 m?2 or less. The high-strength steel sheet has a tensile strength of 400 MPa or more and a fracture elongation of 10% or more.