Abstract: A control device for an internal combustion engine includes circuitry. The circuitry is configured to determine whether a running state of the internal combustion engine is in an auxiliary driving state in which an electric motor drives a compressor. The circuitry is configured to increase an opening degree of a waste gate valve when the running state is determined to be in the auxiliary driving state. The circuitry is configured to control a valve actuation phase variable mechanism to increase an overlap period in which a valve opening period of an intake valve and a valve opening period of an exhaust valve are overlapped with each other when the running state is determined to be in the auxiliary driving state.

Abstract: A silicon carbide (SiC) structure and a method of forming the SiC structure are disclosed. The SiC structure includes an SiC substrate and a film provided on the SiC substrate. The SiC substrate contains both of a hexagonal close packed (hcp) structure and a face centered cubic (fcc) structure, and has only one of the hcp surface and the fcc surface, where the hcp surface includes atoms in the topmost layer whose rows overlap with rows of atoms in the third layer, while, the fcc surface includes atoms in the topmost layer whose rows are different from rows of atoms in the third layer.

Abstract: Provided is a technique for detaching a semiconductor chip from a mount tape without failures in the semiconductor chip, such as cracking and chipping. A semiconductor pick-up apparatus includes the following components: a pick-up stage above which a semiconductor chip is to be placed through a mount tape attached to the lower surface of the semiconductor chip; an expander holding and expanding the mount tape; a push-up needle projecting from the upper surface of the pick-up stage, and capable of pushing up the semiconductor chip through the mount tape; and a mechanism pushing up the push-up needle while operating the push-up needle so as to form a spiral shape.

Abstract: A control apparatus for an internal combustion engine, which is capable of, when controlling a variable intake cam phase mechanism and a variable exhaust cam phase mechanism, ensuring a stable combustion of a mixture and improving the drivability, even when one of the two is in a failure state. The control apparatus includes an ECU. The ECU calculates an intake cam phase and an exhaust cam phase, determines, based on the calculated intake cam phase and exhaust cam phase, whether or not there has occurred a failure state of one of the mechanisms, in which the valve overlap period becomes longer than during a normal time, and controls, when it is determined that there has occurred the failure state of the one mechanism, the other mechanism such that the valve overlap period becomes shorter.

Abstract: An electron device having a channel layer made of graphene is disclosed. The electron device includes a graphene layer on a substrate, and a source electrode, a drain electrode, and a gate insulating film on the graphene layer. The electron device further includes a first gate electrode on the gate insulating film between the source electrode and the drain electrode, and a second gate electrode within the substrate. For the second gate electrode, another gate insulating film is on the graphene layer, or alternatively, a part of the substrate is interposed between the second gate electrode and the channel layer.

Abstract: A control device for an internal combustion engine including a supercharger and a waste gate valve, the supercharger including a compressor an electric motor, and a turbine, the turbine being provided in an exhaust passage of the internal combustion engine, the waste gate valve being provided in a bypass passage that bypasses the turbine, the control device includes circuitry. The circuitry is configured to drive the electric motor in a high-load operation state in which the load of the internal combustion engine is determined to be equal to or larger than a first reference load and the temperature of the exhaust gas is determined to be expected to be higher than a reference temperature. The circuitry is configured to increase an opening degree of the waste gate valve in the high-load operation state.

Abstract: A control system for an internal combustion engine, which is capable of quickly and properly ensuring excellent fuel economy of the engine even when atmospheric pressure has changed. The control system includes an ECU. The ECU performs weighted average calculation on lowland map values and highland map values, based on atmospheric pressure, to thereby calculate map values of a demanded torque that minimize a fuel consumption ratio of the engine in the atmospheric pressure, and calculates engine demanded output. The ECU calculates demanded torque and demanded engine speed using the map values and the engine demanded output, respectively. The ECU controls the engine using the demanded torque.

Abstract: Provided is a control device for an internal combustion engine, which can ensure a stable combustion state of the internal combustion engine even under a high-humidity environment condition, thereby improving the merchantability. The control device for the internal combustion engine includes an ECU (electronic control unit). The ECU calculates a basic target EGR amount according to an operating state of the internal combustion engine, calculates a water vapor amount in air drawn into an intake passage of the internal combustion engine, calculates an EGR conversion amount by using the water vapor amount, calculates a target EGR amount by subtracting the EGR conversion amount from the basic target EGR amount, and controls internal EGR and external EGR of the internal combustion engine by using the target EGR amount.

Abstract: A semiconductor layered body includes: a plurality of protrusions having first main surfaces along a reference plane and protruding from the reference plane; and a first semiconductor layer disposed at a side of the plurality of protrusions opposite to the first main surfaces so as to connect the plurality of protrusions to one another. Each of the protrusions is composed of a group III nitride that has a dislocation density of less than or equal to 1×108 cm?3, that is expressed by a composition formula of AlxGa1-xN, and that satisfies 0?x<1. The first semiconductor layer is composed of a group III nitride that has a dislocation density of less than or equal to 1×109 cm?3, that is expressed by a composition formula of AlyGa1-yN, and that satisfies 0<y?1.

Abstract: A control apparatus for an internal combustion engine, which, in the case of intake-side and exhaust-side cleaning controls being performed, is capable of ensuring stable combustion of a mixture when the engine is returned from a decelerating FC operation to a normal operation, thereby making it possible to enhance marketability. The control apparatus for the engine includes an ECU. The ECU performs intake-side cleaning control for controlling an intake cam phase CAIN to a predetermined most advanced value CAIN_ADV so as to increase a valve overlap period of an intake valve and an exhaust valve, and performs exhaust-side cleaning control for controlling an exhaust cam phase CAEX to a predetermined most retarded value CAEX_RET so as to increase the valve overlap period of the intake valve and the exhaust valve. Further, during execution of one of the intake-side and exhaust-side cleaning controls, the ECU inhibits execution of the other.

Abstract: In a control device of an internal-combustion engine according to the disclosure, an intake throttle valve (25) for adjusting an EGR valve differential pressure (?PEGR) is provided, an EGR valve upstream pressure (PEGR0) is estimated by using a target fresh air amount (GAIRCMD) (step 6), a target differential pressure (?PEGRCMD) is set to a smaller value as the target fresh air amount (GAIRCMD) becomes smaller (FIG. 5), and a difference between the EGR valve upstream pressure (PEGR0) and the target differential pressure (?PEGRCMD) is set as a target valve downstream pressure (P1CMD) (step 7). By using the target fresh air amount (GAIRCMD), the EGR valve upstream pressure (PEGR0), and the target valve downstream pressure (P1CMD), the target EGR valve opening degree (LEGRCMD) is set (step 23), and an EGR valve (43) is controlled based on the target EGR valve opening degree (step 24).

Abstract: A substrate includes: a support substrate having a first main surface and a surface layer region which includes at least the first main surface and is formed of any one material selected from the group consisting of boron nitride, molybdenum disulfide, tungsten disulfide, niobium disulfide, and aluminum nitride; and a graphene film disposed on the first main surface and having an atomic arrangement oriented in relation to an atomic arrangement of the material forming the surface layer region. Accordingly, the substrate is provided that enables a high mobility to be stably ensured in an electronic device manufactured to include the graphene film forming an electrically conductive portion.

Abstract: A control device of an internal-combustion engine capable of improving merchantability by promptly and appropriately securing an in-cylinder fresh air amount even when an internal-combustion engine including a boost device and an EGR device is in a transient operation state is provided. A control device 1 includes an ECU 2. The ECU 2 calculates an intake air amount GGAScyl, sets an upper-limit target fresh air amount GAIR_hisH, controls a boost operation of a boost device 7 when an operating range of an internal-combustion engine 3 is in a predetermined boost range, and controls an EGR device 5 so that exhaust gas recirculation is stopped when the intake air amount GGAScyl does not reach an upper-limit target fresh air amount GAIR_hisH and the exhaust gas recirculation is executed when the intake air amount GGAScyl reaches the upper-limit target fresh air amount GAIR_hisH in the predetermined boost range.

Abstract: A control device for an internal combustion engine includes ignition timing control circuitry, exhaust gas amount control circuitry, calculation circuitry, and retard circuitry. The exhaust gas amount control circuitry is configured to control an amount of exhaust gas recirculated to an intake passage via an exhaust gas recirculation passage. The calculation circuitry is configured to calculate an exhaust gas recirculation ratio of an exhaust gas amount in a combustion chamber to an entire gas amount in the combustion chamber. The retard circuitry is configured to retard ignition timing such that the ignition timing is on a retard side with respect to an optimum ignition timing at which the engine outputs maximum torque and such that the ignition timing is before a compression process end timing in a cylinder if the exhaust gas recirculation ratio is higher than a threshold ratio.

Abstract: Provided is a technique capable of preventing occurrence of partial discharge. An evaluation apparatus includes a probe disposed on an undersurface of an upper component; a sidewall part disposed on the undersurface of the upper component and enclosing sides of the probe; and a first gas supplying part. The first gas supplying part is capable of supplying a gas to a to-be-measured object that is placed on a stage when the sidewall part comes in proximity to the stage, and to a space enclosed by the stage, the sidewall part, and the upper component when the sidewall part is in contact with the stage.

Abstract: A control system and a control method for an internal combustion engine, which are capable of accurately calculating an in-cylinder gas amount and an EGR ratio by a relatively simple method even in a case where an in-cylinder gas temperature is changed by execution of internal EGR, and properly controlling the engine using the EGR ratio thus calculated. An in-cylinder gas amount Gact actually filled in the cylinder is calculated by correcting an ideal in-cylinder gas amount Gth, which is an amount of gases filled in a cylinder in an ideal state in which it is assumed that no exhaust gases of the engine are recirculated into the cylinder, using an ideal in-cylinder gas temperature Tcylth according to an in-cylinder gas temperature Tcyl, and an EGR ratio REGRT is calculated using the in-cylinder gas amount Gact and an intake air amount Gaircyl.

Abstract: An electron device having a channel layer made of graphene is disclosed. The electron device includes a graphene layer on a substrate, electrodes of source, drain, and a gate insulating film on the graphene layer. The electron device further includes a firs gate electrode on the gate insulating film between the source electrode and the drain electrode, and further includes a second gate electrode within the substrate. The second gate electrode puts another gate insulating film against the graphene layer, or a part of the substrate.

Abstract: A field effect transistor (FET) including a graphene layer as a carrier transporting channel is disclosed. The FET provides, on a substrate, a graphene layer, and electrodes of the source and drain on the graphene layer. The FET further provides a couple of gate electrodes and a supplemental electrode, where the former two gate electrodes are provided on a gate insulating film, while, the latter one is provided on the graphene layer and between two gate electrodes. The second gate electrode provided closer to the drain electrode has a gate length that is shorter than the gate length of the first gate electrode provided closer to the source electrode.

Abstract: An evaluation apparatus includes an insulating plate, a plurality of probes fixed to the insulating plate, an insulating portion having a connection portion connected to the insulating plate in a detachable manner and a tip portion continuous with the connection portion, the tip portion being narrower than the connection portion, an insulator formed by combining the insulating portions to surround the plurality of probes in planar view, and an evaluation unit for passing currents through the plurality of probes to evaluate electrical characteristics of an object to be measured.

Abstract: A silicon carbide (SiC) structure and a method of forming the SiC structure are disclosed. The SiC structure includes an SiC substrate and a film provided on the SiC substrate. The SiC substrate contains both of a hexagonal close packed (hcp) structure and a face centered cubic (fcc) structure, and has only one of the hcp surface and the fcc surface, where the hcp surface includes atoms in the topmost layer whose rows overlap with rows of atoms in the third layer, while, the fcc surface includes atoms in the topmost layer whose rows are different from rows of atoms in the third layer.