Abstract: A window regulator includes: a base assembled to a vehicle; a bracket configured to support window glass; an arm member having one end side rotatably supported by the base and the other end side rotatably supported by the bracket; and a driving member configured to drive, by rotationally driving the arm member, the bracket configured to support the window glass. At least one of a rotation center axis on the one end side of the arm member and a rotation center axis on the other end side of the arm member is inclined in a vehicle front-rear direction with respect to a vehicle width direction when viewed from a vehicle upper-lower direction.

Abstract: In a wall electrode liquid crystal display device, planar distribution of the wall structure and the electrode is optimized to improve a yield. A liquid crystal display device includes a plurality of pixels arranged in a matrix, each of the pixels having an insulator wall structure formed at a border of pixels, a wall electrode formed at a side surface of the wall structure of the border of the pixels, a source electrode which is continuous with the wall electrode and formed of a planar electrode extending in a planar direction, a first common electrode provided between source electrodes at both sides of the pixel to form a retentive capacitance, and a second common electrode provided between wall electrodes on both sides of the pixel. A slit which becomes a border of the wall electrodes of two adjacent pixels is disposed only on a top of the wall structure.

Abstract: The present invention provides a liquid crystal display device including: plural pixels disposed in a matrix shape, each pixel having insulating wall-shaped structures at the boundaries of the pixels and a small wall-shaped structure between the wall-shaped structures; wall electrodes, each having wall-shaped electrodes formed on the side faces of the wall-shaped structures, and planar electrodes that are connected to the wall-shaped electrodes and extend in the planar direction; electrodes, each having a TFT-side electrode covering the small wall-shaped structure and a storage capacitor electrode that is connected to the TFT-side electrode and extends in the planar direction of the substrate; and interlayer insulating films formed between the storage capacitor electrodes and the planar electrodes. And the interlayer insulating films of inorganic films are not formed on the upper and side faces and at the base portions of the wall-shaped structures at the boundaries of the pixels.

Abstract: In a wall electrode liquid crystal display device, planar distribution of the wall structure and the electrode is optimized to improve a yield. A liquid crystal display device includes a plurality of pixels arranged in a matrix, each of the pixels having an insulator wall structure formed at a border of pixels, a wall electrode formed at a side surface of the wall structure of the border of the pixels, a source electrode which is continuous with the wall electrode and formed of a planar electrode extending in a planar direction, a first common electrode provided between source electrodes at both sides of the pixel to form a retentive capacitance, and a second common electrode provided between wall electrodes on both sides of the pixel. A slit which becomes a border of the wall electrodes of two adjacent pixels is disposed only on a top of the wall structure.

Abstract: In a wall electrode liquid crystal display device, planar distribution of the wall structure and the electrode is optimized to improve a yield. A liquid crystal display device includes a plurality of pixels arranged in a matrix, each of the pixels having an insulator wall structure formed at a border of pixels, a wall electrode formed at a side surface of the wall structure of the border of the pixels, a source electrode which is continuous with the wall electrode and formed of a planar electrode extending in a planar direction, a first common electrode provided between source electrodes at both sides of the pixel to form a retentive capacitance, and a second common electrode provided between wall electrodes on both sides of the pixel. A slit which becomes a border of the wall electrodes of two adjacent pixels is disposed only on a top of the wall structure.

Abstract: In a liquid crystal display device including: TFT substrate; color filter; counter electrode; interlayer insulation film; pixel electrode; alignment film; liquid crystal layer; counter substrate; and Si semiconductor layer. The color filter, counter electrode, interlayer insulation film, pixel electrode, and alignment film being formed on the side where the TFT substrate is provided, the counter substrate being disposed in facing relation to the TFT substrate with the liquid crystal layer put between the counter substrate and TFT substrate, the Si semiconductor layer is formed between the pixel electrode and interlayer insulation film. Even when light from a backlight is absorbed by the color filter and sufficient light cannot reach the alignment film, electric charges accumulated on the alignment film can escape to the pixel electrode in an early stage by the Si semiconductor layer formed under the alignment film, thereby capable of erasing the afterimage in an early stage.

Abstract: Provided is a method of manufacturing a display device that includes a structure formed so as to protrude at least in a normal direction of a first substrate, and an electrode formed in a side wall surface of the structure, the method including: forming a transparent conductive film for the electrode; forming a low-affinity material having a low affinity for a resist film on an upper surface of the transparent conductive film formed in a head surface of the structure; forming a resist film by applying a liquid resist material to an upper layer of the transparent conductive film and then fixing the resist material; forming an opening that exposes the transparent conductive film in the resist film by removing the low-affinity material; etching the transparent conductive film which is a lower layer using the resist film as a protective film; and removing the resist film.

Abstract: The invention prevents disconnection of data lines that traverse two-layered gate lines via an insulating film. Data lines 20 override and thereby traverse gate lines 10 with an insulating film deposited therebetween. The gate lines 10 each have a two-layered structure including a lower AlCu layer 11 and an upper MoCr layer 12. When the thickness ratio of the upper layer 12 to the lower layer 11 is in the range of 0.4 to 1.0, it is possible to prevent a decrease in the etch speed of the upper layer 12 near the side edges of the gate line 10, which occurs due to galvanization. As a result, the upper layer 12 is prevented from having an overhang. The absence of overhangs on the gate lines 10 prevents the data lines 20 from being disconnected at the intersections of the gate lines 10 and the data lines 20.

Abstract: The liquid crystal display device includes a pixel structure provided with a large wall formed along a long side of a pixel with a rectangular plane, a small wall formed at a center of the pixel and extending in the same direction as the large wall, a wall electrode formed on a wall surface of the large wall, a plane electrode formed between the small and large walls, in which the wall electrode and the plane electrode form a pixel electrode, and a common electrode formed on a surface of the small wall. The large wall has a part with an increased thickness at an end part of the pixel. The wall electrode is bent toward the center of the pixel. This structure prevents decrease of reverse twist of liquid crystal at an end part of the pixel as well as generation of domain, thus improving transmittance of the screen.

Abstract: In a method of manufacturing a liquid crystal display device in which a plurality of pixels are arranged in a matrix, each of the pixels has an insulator wall structure at a boundary of the pixels, and a wall electrode is provided at least at a side of the wall structure, the wall structure being formed by: using a chemically amplified resist as a material of the wall structure, a step of applying the chemically amplified resist; a step of exposing and developing the chemically amplified resist; a step of irradiating light on an entire surface to perform post exposure; a step of pre-calcinating the chemically amplified resist at a temperature lower than a main calcination temperature; and a step of performing main calcination at a temperature higher than a pre-calcination temperature.

Abstract: In a liquid crystal display device including: TFT substrate; color filter; counter electrode; interlayer insulation film; pixel electrode; alignment film; liquid crystal layer; counter substrate; and Si semiconductor layer. The color filter, counter electrode, interlayer insulation film, pixel electrode, and alignment film being formed on the side where the TFT substrate is provided, the counter substrate being disposed in facing relation to the TFT substrate with the liquid crystal layer put between the counter substrate and TFT substrate, the Si semiconductor layer is formed between the pixel electrode and interlayer insulation film. Even when light from a backlight is absorbed by the color filter and sufficient light cannot reach the alignment film, electric charges accumulated on the alignment film can escape to the pixel electrode in an early stage by the Si semiconductor layer formed under the alignment film, thereby capable of erasing the afterimage in an early stage.

Abstract: Provided is a method of manufacturing a display device that includes a structure formed so as to protrude at least in a normal direction of a first substrate, and an electrode formed in a side wall surface of the structure, the method including: forming a transparent conductive film for the electrode; forming a low-affinity material having a low affinity for a resist film on an upper surface of the transparent conductive film formed in a head surface of the structure; forming a resist film by applying a liquid resist material to an upper layer of the transparent conductive film and then fixing the resist material; forming an opening that exposes the transparent conductive film in the resist film by removing the low-affinity material; etching the transparent conductive film which is a lower layer using the resist film as a protective film; and removing the resist film.

Abstract: In a method of manufacturing a liquid crystal display device in which a plurality of pixels are arranged in a matrix, each of the pixels has an insulator wall structure at a boundary of the pixels, and a wall electrode is provided at least at a side of the wall structure, the wall structure being formed by: using a chemically amplified resist as a material of the wall structure, a step of applying the chemically amplified resist; a step of exposing and developing the chemically amplified resist; a step of irradiating light on an entire surface to perform post exposure; a step of pre-calcinating the chemically amplified resist at a temperature lower than a main calcination temperature; and a step of performing main calcination at a temperature higher than a pre-calcination temperature.

Abstract: The liquid crystal display device includes a pixel structure provided with a large wall formed along a long side of a pixel with a rectangular plane, a small wall formed at a center of the pixel and extending in the same direction as the large wall, a wall electrode formed on a wall surface of the large wall, a plane electrode formed between the small and large walls, in which the wall electrode and the plane electrode form a pixel electrode, and a common electrode formed on a surface of the small wall. The large wall has a part with an increased thickness at an end part of the pixel. The wall electrode is bent toward the center of the pixel. This structure prevents decrease of reverse twist of liquid crystal at an end part of the pixel as well as generation of domain, thus improving the transmittance of the screen.

Abstract: The present invention provides a liquid crystal display device including: plural pixels disposed in a matrix shape, each pixel having insulating wall-shaped structures at the boundaries of the pixels and a small wall-shaped structure between the wall-shaped structures; wall electrodes, each having wall-shaped electrodes formed on the side faces of the wall-shaped structures, and planar electrodes that are connected to the wall-shaped electrodes and extend in the planar direction; electrodes, each having a TFT-side electrode covering the small wall-shaped structure and a storage capacitor electrode that is connected to the TFT-side electrode and extends in the planar direction of the substrate; and interlayer insulating films formed between the storage capacitor electrodes and the planar electrodes. And the interlayer insulating films of inorganic films are not formed on the upper and side faces and at the base portions of the wall-shaped structures at the boundaries of the pixels.

Abstract: The present invention prevents the diffusion of an aluminum element into a polysilicon layer in a heating step when an aluminum-based conductive layer is used in a source/drain electrode which is in contact with low-temperature polysilicon whereby the occurrence of defective display can be obviated. An aluminum-based conductive layer is used in a source/drain electrode and a barrier layer made of molybdenum or a molybdenum alloy layer is formed between the aluminum-based conductive layer and a polysilicon layer. Further, a molybdenum oxide nitride film formed by the rapid heat treatment (rapid heat annealing) in a nitrogen atmosphere is formed over a surface of the molybdenum or the molybdenum alloy which constitutes the barrier layer.

Abstract: An image display device using transistors each having a polycrystalline semiconductor layer constructed so that drain and source regions are fully activated, and a manufacturing method thereof. The polycrystalline semiconductor layer is so provided that impurity concentrations are easy to control in LDD regions . The image display device further uses transistors having a gate electrode on an upper surface of the semiconductor layer with an insulating film therebetween, a drain region formed on one side of the gate electrode, and a source region formed on another side of the gate electrode. An activated P-type impurity is added to the area underlying the gate electrode, and an activated N-type impurity is added to the area excluding the area underlying the gate electrode.

Abstract: An endless belt transports a recording medium through image forming sections and transfers toner images from corresponding ones of the image forming sections onto the recording medium. The endless belt has a surface resistivity and a volume resistivity. The surface resistivity and the volume resistivity are related such that 0.3 ?(log ? s?log ? v)?1.3 where ? s is the surface resistivity in ?/? measured after a voltage of substantially 500 V is applied to the endless belt for ten seconds and ? v is the volume resistivity in ?·cm ten after a voltage of substantially 250 V is applied to the endless belt for ten seconds.

Abstract: The present invention prevents the diffusion of an aluminum element into a polysilicon layer in a heating step when an aluminum-based conductive layer is used in a source/drain electrode which is in contact with low-temperature polysilicon whereby the occurrence of defective display can be obviated. An aluminum-based conductive layer is used in a source/drain electrode and a barrier layer made of molybdenum or a molybdenum alloy layer is formed between the aluminum-based conductive layer and a polysilicon layer. Further, a molybdenum oxide nitride film formed by the rapid heat treatment (rapid heat annealing) in a nitrogen atmosphere is formed over a surface of the molybdenum or the molybdenum alloy which constitutes the barrier layer.

Abstract: The present invention prevents the diffusion of an aluminum element into a polysilicon layer in a heating step when an aluminum-based conductive layer is used in a source/drain electrode which is in contact with low-temperature polysilicon whereby the occurrence of defective display can be obviated. An aluminum-based conductive layer is used in a source/drain electrode and a barrier layer made of molybdenum or a molybdenum alloy layer is formed between the aluminum-based conductive layer and a polysilicon layer. Further, a molybdenum oxide nitride film formed by the rapid heat treatment (rapid heat annealing) in a nitrogen atmosphere is formed over a surface of the molybdenum or the molybdenum alloy which constitutes the barrier layer.