Abstract: The present invention prevents the diffusion of an aluminum element into a polysilicon layer in a heating step when an aluminum-based conductive layer is used in a source/drain electrode which is in contact with low-temperature polysilicon whereby the occurrence of defective display can be obviated. An aluminum-based conductive layer is used in a source/drain electrode and a barrier layer made of molybdenum or a molybdenum alloy layer is formed between the aluminum-based conductive layer and a polysilicon layer. Further, a molybdenum oxide nitride film formed by the rapid heat treatment (rapid heat annealing) in a nitrogen atmosphere is formed over a surface of the molybdenum or the molybdenum alloy which constitutes the barrier layer.

Abstract: A drive circuit for a liquid crystal display apparatus and a large-sized liquid crystal display apparatus integrated with the drive circuit and having a reduced area occupied by the circuits. The drive circuit includes sample/hold circuits for sampling the input voltage at a predetermined timing, comparator circuits for comparing the output of the sample/hold circuits with the voltage of the signal line VD(i), switches for controlling the output voltage of the signal line, a voltage supply circuit constituted as an image signal control circuit for supplying a voltage to the switches, and control circuits for controlling the switches in accordance with the output of the comparator circuits. For the liquid crystal display panel drive circuit configured as described above, the signal line is controlled by the switches, and therefore the area occupied by the drive circuits can be reduced.

Abstract: An image display device using transistors each having a polycrystalline semiconductor layer constructed so that drain and source regions are fully activated, and a manufacturing method thereof. The polycrystalline semiconductor layer is so provided that impurity concentrations are easy to control in LDD regions . The image display device further uses transistors having a gate electrode on an upper surface of the semiconductor layer with an insulating film therebetween, a drain region formed on one side of the gate electrode, and a source region formed on another side of the gate electrode. An activated P-type impurity is added to the area underlying the gate electrode, and an activated N-type impurity is added to the area excluding the area underlying the gate electrode.

Abstract: A conveyor controller calculates a distance which a conveyor is to move to convey a workpiece, and a simulated model of the conveyor is moved by a conveyor moving circuit. The calculated distance is converted into conveyor movement pulses by an encoder circuit, and the conveyor movement pulses are stored in a memory. A robot controller operates a simulated model of a coating robot in synchronism with the movement of the conveyor, based on statuses of simulated models of limit switches which are set by a limit switch controller. Statuses of operation of the simulated models are displayed on a display unit.

Abstract: A production line for manufacturing automobiles, for example, has a plurality of movable carriages for carrying workpieces such as automotive bodies and a plurality of work stations for processing the automotive bodies such as by installing parts thereon or machining them. A controller which controls the work stations to process the automotive bodies has a memory having a plurality of storage areas for storing carriage identification data from the carriages that have arrived at the work stations and automotive body type data regarding the automotive bodies on the carriages, and also for storing carriage identification data transmitted from next carriages to arrive at the work stations and automotive body type data about the automotive bodies carried on the next carriages.

Abstract: An image pick-up tube and a method of fabricating an image pick-up tube and a target section used therewith, in which the target includes at least a conductive film and a photoconductive film on a substrate for photo-electric conversion, and a signal from the target section is read by an electron beam scanning system. At least a part of the surface area outside the effective scanning region of the electron beam scanning side of the target section is formed of a secondary electron emission dampening layer.

Abstract: A method of making an image pickup tube target (FIG. 1A), etc., using an amorphous photoconductive layer. When an electrode, an amorphous semiconductor layer, etc., are provided on a substrate, the steps of ion etching away a surface of the substrate and forming the electrode are performed so that a target (FIG. 1A) is produced in which no defects are substantially caused in a reproduced image even if a high electric field is applied across the target.

Abstract: A target of an image pickup tube, having a transparent substrate, a transparent conductive film, a p-type photoconductive film made mainly from amorphous Se, and an n-type conductive film capable of forming a rectifying contact at the interface with the p-type photoconductive film, using the rectifying contact as a reverse bias, characterized in that the p-type photoconductive film containing at least a region having more than 35%, and to 60% by weight of Te in the film thickness direction, and at least a region containing 0.005 to 5% by weight of at least a material capable of forming shallow levels in the amorphous Se in the film thickness direction, has good after-image characteristics even if operated at a high temperature.

Abstract: A method of water cooling a hot-rolled steel plate is disclosed. In this method, while a hot-rolled steel plate is being advanced lengthwise, a plurality of nozzles spray cooling water to the steel plate, and thus the plate is cooled to a predetermined temperature at a predetermined cooling rate. Before, while and after the plurality of nozzles carry out water-cooling, temperatures are consistently measured at predetermined temperature measurement points in cross-sectional areas of temperature measurement positions which are arranged lengthwise at predetermined locations of the steel plate. Each time such measurement is performed, degree of deformation of the plate is calculated on the basis of temperature differences between the temperature measurement points. When the calculated degree of deformation is not within an allowable range, corrections are made on the distribution of the water supplied by the plurality of nozzles.

Abstract: An image pick-up tube target comprising an N-type conductive film formed on a transparent substrate, and P-type photoconductive film in rectifying contact with the N-type conductive film and comprising a first layer containing As, fluoride and Se, a second layer containing As, Te and Se, a portion of said second layer containing fluoride, a third layer containing As and Se, the composition of the third layer being different along the direction of thickness thereof, a fourth layer containing As and Se, wherein the concentration of As in the second layer varies continuously along the direction of thickness thereof, and in the second layer the minimum As concentration is located on the first layer side of the second layer and the maximum As concentration is located on the third layer side of the second layer.

Abstract: Hot steel plate as hot-rolled is passed forward longitudinally through pairs of top and bottom rollers disposed in the direction of the plate travel. The steel plate is cooled with water supplied to its top and bottom surfaces from the nozzles on a plurality of cooling units disposed in the same longitudinal direction. Each cooling unit is disposed between adjoining pairs of the top and bottom rollers. Before cooling is started, the temperature distribution in the steel plate is determined and the desired mean cooling rate is set. The distance from the plate edge over which the supply of the cooling water at least to the bottom side of the plate is to be cut off is determined for each cooling unit on the basis of the determined temperature distribution and preset mean cooling rate. By so doing, the temperature of the inner edge portion of the steel plate is kept above the temperature of the middle portion, thereby allowing the Ar.sub.

Abstract: An image pickup tube target includes a Se-As-Te photoconductive layer whose arsenic concentration changes in a direction of thickness of the Se-As-Te photoconductive layer, a carrier extraction layer having a high arsenic concentration and being contiguous to the Se-As-Te photoconductive layer, a capacitive layer having a low arsenic concentration and being contiguous to the carrier extraction layer, a doped layer obtained by doping In.sub.2 O.sub.3, MoO.sub.2 or a mixture thereof in an interface between the carrier extraction layer and the capacitive layer.