Abstract: Disclosed is a producing method of a semiconductor device comprising a step of forming a tunnel insulating film of a flash device comprising a first nitridation step of forming a first silicon oxynitride film by nitriding a silicon oxide film formed on a semiconductor silicon base by one of plasma nitridation and thermal nitridation, the plasma nitridation carrying out nitridation process by using a gas activated by plasma discharging a first gas including a first compound which has at least a nitrogen atom in a chemical formula thereof, and the thermal nitridation carrying out nitridation process using heat by using a second gas including a second compound which has at least a nitrogen atom in a chemical formula thereof, and a second nitridation step of forming a second silicon oxynitride film by nitriding the first silicon oxynitride film by the other of the plasma nitridation and the thermal nitridation.

Abstract: A substrate processing apparatus and a substrate manufacturing method using the substrate processing apparatus which manufactures, with a high production efficiency, a semiconductor having superior electric characteristics in the nitridation process of a gate insulating film are disclosed. The substrate processing apparatus for the substrate manufacturing method includes a processing chamber which processes the substrate, a processing chamber which generates the plasma, a heating unit which heats the substrate, a gas supply source, and a control unit which executes a first process which converts a nitrogen-containing gas supplied to the processing chamber into the plasma by the processing chamber and heats the substrate by the heating unit, and a second process which stops the plasma generation and heating the substrate further at the temperature of not lower than 450° C. by the heating unit.

Abstract: Disclosed is a producing method of a semiconductor device comprising: film thinning a silicon oxide film by heating the silicon oxide film formed after a surface of a silicon substrate is etched by chemical liquid, and one of thermal oxidizing by heating the thinned silicon oxide film to oxidize the silicon oxide film by gas including at least oxygen, and plasma oxidizing the thinned silicon oxide film by plasma discharged gas including at least oxygen.

Abstract: Disclosed is a producing method of a semiconductor device comprising a step of forming a tunnel insulating film of a flash device comprising a first nitridation step of forming a first silicon oxynitride film by nitriding a silicon oxide film formed on a semiconductor silicon base by one of plasma nitridation and thermal nitridation, the plasma nitridation carrying out nitridation process by using a gas activated by plasma discharging a first gas including a first compound which has at least a nitrogen atom in a chemical formula thereof, and the thermal nitridation carrying out nitridation process using heat by using a second gas including a second compound which has at least a nitrogen atom in a chemical formula thereof, and a second nitridation step of forming a second silicon oxynitride film by nitriding the first silicon oxynitride film by the other of the plasma nitridation and the thermal nitridation.

Abstract: An illuminating unit includes a pair of fluorescent lamps each having a prism sheet mounted peripherally thereof to act as a condensing member, and concave mirrors for reflecting light emitted from the fluorescent lamps to printing paper acting as a print. The prism sheet acts as a condensing member for condensing the light diffused axially of each fluorescent lamp, in directions perpendicular to the axis of the fluorescent lamp. The prism sheet has minute projections approximately in the shape of triangular prisms formed on a surface thereof continually along the axis of the fluorescent lamp and projecting in the directions perpendicular to the axis of the fluorescent lamp.

Abstract: An illuminating unit includes a pair of fluorescent lamps each having a prism sheet mounted peripherally thereof to act as a condensing member, and concave mirrors for reflecting light emitted from the fluorescent lamps to printing paper acting as a print. The prism sheet acts as a condensing member for condensing the light diffused axially of each fluorescent lamp, in directions perpendicular to the axis of the fluorescent lamp. The prism sheet has minute projections approximately in the shape of triangular prisms formed on a surface thereof continually along the axis of the fluorescent lamp and projecting in the directions perpendicular to the axis of the fluorescent lamp.

Abstract: A parking brake operating device for vehicle, wherein a vehicle is held by a specified braking force by manually rotating a brake lever (2), a held state is released by rotatingly operating the brake lever (2) upward by a specified amount from the held state, and the braking force can be changed to an increasing side and held by further raising the brake lever upward from the held state beyond the specified amount, whereby a release operation can be performed without using a push button or a push rod.

Abstract: A parking brake operating device for vehicle, wherein a vehicle is held by a specified braking force by manually rotating a brake lever (2), a held state is released by rotatingly operating the brake lever (2) upward by a specified amount from the held state, and the braking force can be changed to an increasing side and held by further raising the brake lever upward from the held state beyond the specified amount, whereby a release operation can be performed without using a push button or a push rod.

Abstract: A laser beam machining method includes the steps of, irradiating a laser beam on a machining portion of a workpiece for the machining thereof, blowing out an assist gas toward the machining portion of the workpiece continuously during the irradiating step, and blowing out a blow gas toward the machining portion intermittently during the irradiating step.