Abstract: An information processing apparatus/method employs error detection or correction to encode information to be distributed in a description format used in a multimedia network in which the error detection or correction encodes at least a portion in the header in the information to be distributed with higher redundancy than the entity in the information to be distributed. The encoded information to be distributed in a broadcast signal is multiplexed and transmitted. Alternatively, the information processing apparatus/method may involve: transmitting a portion of the header in the information to be distributed at least a plurality of number of times while the entity in the information to be distributed is transmitted; and/or transmitting a plurality of kinds of information as an entity in the information to be distributed, and using different error detection or correction ability in correspondence with the kind of information.

Abstract: An electron emitting device is provided with an N type semiconductor disposed in contact with a first electrode. A P type semiconductor contacts the N type semiconductor to define a PN junction. A low work function metal electrode contacts the P type semiconductor thus defining a Schottky barrier. First and second means are provided to forward bias the PN junction and to reversed bias the Schottky barrier, respectively.

Abstract: The present invention provides an X-ray mask structure having an X-ray transmissive membrane, an X-ray absorber held on an X-ray transmissive membrane, and a holding frame that holds the X-ray transmissive membrane, and the X-ray transmissive membrane has a layer of aluminum nitride, and the X-ray absorber has a heavy metal nitride.

Abstract: A mask suitably usable in X-ray lithography has a membrane and a radiation absorbing material pattern formed on the membrane, wherein the radiation absorbing material pattern contains an alloy including tungsten (W) and molybdenum (Mo), the proportion of the molybdenum content to the alloy being in a range of 0.1-50 wt %, the alloy having crystal precedence orientation of {110}. In one preferred form, the absorbing material pattern is provided on an amolphous metal layer formed on the mask membrane.

Abstract: An electron emitting device causes electron emission by a current supply in a coarse resistor film. The coarse thin resistor film is composed at least of a coarse thin silicon film.

Abstract: An electron emitting device causes electron emission by a current supply in a coarse resistor film. The coarse thin resistor film is composed at least of a coarse thin silicon film.

Abstract: An electron emitting device causes electron emission by a current supply in a coarse resistor film. The coarse thin resistor film is composed at least of a coarse thin silicon film.

Abstract: An electron emission element comprises a P-type semiconductor substrate and electrodes formed on both ends of the semiconductor substrate. A voltage is applied between said electrodes. The P-type semiconductor substrate is irradiated with light to emit the electrons, generated in the P-type semiconductor substrate by photoexcitation, from an electron emitting face at an end of the P-type semiconductor substrate.

Abstract: The present invention provides an X-ray mask structure having an X-ray transmissive membrane, an X-ray absorber held on an X-ray transmissive membrane, and a holding frame that holds the X-ray transmissive membrane, and the X-ray transmissive membrane has a layer of aluminum nitride, and the X-ray absorber has a heavy metal nitride.

Abstract: An electron emission device is provided in which a drive current for driving an electron emission element is maintained at a constant level. The device comprises a transistor having its base provided with a divided voltage. The electron emission element is responsive to the transistor.

Abstract: A cold cathode device wherein a cold cathode and an anode face each other with an electron transit path intermediated therebetween, and one or more control electrodes structurally insulated from the said cathode and the anode, are provided exposing to the electron transit path. A cold cathode vacuum tube has an electron emission element having a p-type semiconductor region on an electron emission side and a work function lowering region with junctional relation to the p-type semiconductor region; and a plate electrode structurally insulated from the electron emission element by using an insulation layer which is formed with an electron transmit path corresponding in position to an electron emission area of the electron emission element.

Abstract: A device for treating fine particles is provided which comprises a plural number of reaction chambers for providing reaction fields different from each other provided along the flow pathway on the downstream side of a nozzle which jets out fine particles in a beam. The device may be provided with a chamber for a starting material for forming fine particles. The nozzle may be a convergent-divergent nozzle.

Abstract: A thermal recording head comprises at least one set of a heat-generating resistance layer and at least one pair of electrodes connected electrically to said heat-generating resistance layer formed on a substrate, wherein said heat-generating resistance layer comprises an amorphous material containing halogen atoms and hydrogen atoms in a matrix of carbon atoms.

Abstract: A method of transferring Bloch lines present in a domain wall of a magnetic domain formed in a thin magnetic firm, includes cyclically forming asymmetrical potential wells along the domain wall in order to locate the Bloch lines at predetermined positions of the domain wall, and applying a pulsed magnetic film to shift the Bloch lines from a predetermined potential well to another potential well. In a magnetic memory for recording information using Bloch lines as an information carrier, a memory substrate has a stripe magnetic domain defined by a domain wall along which asymmetrical potential wells are cyclically formed to stabilize the Bloch lines along the domain wall. The Bloch lines are written in the domain wall in accordance with input information, the Bloch lines so formed are read out, and the read-out Bloch lines are converted into an electrical signal.

Abstract: A device for blowing fine particles is provided which comprises a plural number of upstream chambers for jetting out fine particles provided against a movable substrate. Each of the upstream chambers may be provided with a gas exciter, and also may be provided with an energy imparter for imparting energy to the substrate.

Abstract: A luminescing member emits light as a result of application of excitation energy thereto, wherein a luminescing part comprises on ultrafine particle film formed by deposition of ultrafine particles. It is preferred that the ultrafine particles comprises an amorphous A:Ox or an amorphous A:O:H having an A--O--A bond and an A--OH bond, and the element A is at least one element selected from the group consisting of Si, C and Ge.

Abstract: An apparatus for controlling a flow of fine particles is provided which comprises a convergent-divergent nozzle in a flow path of the fine particles. The nozzle may be operated under an optimum expansion condition, and the differential coefficient of the streamline at the channel inside the nozzle varies continuously and is equal to zero at a throat portion of the nozzle.

Abstract: A reaction apparatus is provided which comprises a flow control system provided with a convergent-divergent nozzle. This nozzle is operated under the optimum expansion condition, and the differential coefficient of the streamline of the channel inside the nozzle varies continuously and reaches zero at a throat of the nozzle.

Abstract: A display apparatus comprises a first substrate provided with a thin film transistor array as a driving switching element and a second substrate provided with another electrode, and produces a display by electro-optical change generated between these substrates. Visibility of the display is improved in such a way that rays of light incident on the display apparatus are converted into diffusion light. Photoconductive material, in particular amorphous silicon, can be used by covering a semiconductive portions of the thin film transistor array of the display apparatus with an intercepting member. In a display apparatus using a thin film transistor array as a driving switching element, a conductive surface electrically insulated from gate lines on a substrate on which the gate lines for the thin film transistor array are formed, such conductive surface acts as a counter electrode of capacitors for storing charge.

Abstract: A display apparatus comprises a first substrate provided with a thin film transistor array as a driving switching element and a second substrate provided with another electrode, and produces a display by electro-optical change generated between these substrates. Visibility of the display is improved in such a way that rays of light incident on the display apparatus are converted into diffusion light. Photoconductive material, in particular amorphous silicon, can be used by covering semiconductive portions of the thin film transistor array of the display apparatus with an intercepting member. In a display apparatus using a thin film transistor array as a driving switching element, a conductive surface electrically insulated from gate lines on a substrate on where the gate lines for the thin film transistor array are formed, such conductive surface acts as a counter electrode of capacitors for storing charge.