Abstract: Provided is a molding technique with which a molding operation is performed smoothly, preventing the production of defective products. Also provided is a molding apparatus including a nozzle, a guide member guiding a molding material to the nozzle, and a heating device, the molding apparatus being further provided with a prevention structure configured to prevent the molding material from melting during transportation through the guide member.

Abstract: Provided is a molding technique with which a molding operation is performed smoothly, preventing the production of defective products. Also provided is a molding apparatus including a nozzle, a guide member guiding a molding material to the nozzle, and a heating device, the molding apparatus being further provided with a prevention structure configured to prevent the molding material from melting during transportation through the guide member.

Abstract: An epitaxial layer is formed on a main surface of a high specific resistance silicon substrate having a specific resistance of at least 100 .OMEGA.cm. A circuit element such as an active element is formed in epitaxial layer. An oxide film is formed such that it covers a surface of epitaxial layer. A metal interconnection layer is formed on a surface of oxide film. An oxide film is formed such that it covers metal interconnection layer. Thus, an inexpensive HF circuit device capable of reducing transmission loss of HF signals can be obtained.

Abstract: A depression having a depth not exceeding 0.1 .mu.m is formed on the surface of an epitaxial layer. An internal base region is formed just below the depression. An external base region is formed outside the depression. The depression having the above depth can suppress electric field at the end of the internal base in the neighborhood of the junction between the internal base region and the external base region.

Abstract: An image sensor includes a photoelectric conversion element, a first MOS transistor having having a gate connected to the photoelectric conversion element, a second MOS transistor connected in series with the first transistor, and a third MOS transistor connected in series with the photoelectric conversion element, wherein the threshold voltage of the third MOS transistor is set higher than that of the second MOS transistor. In one embodiment, each of the pixels included in a second group of rows includes a photoelectric conversion element but without the first, second and third MOS transistors. A fourth MOS transistor connects a photoelectric conversion element of the second group to a photoelectric conversion element of a first group, the photoelectric conversion elements of the first group being part of pixels which contain first, second and third MOS transistors.

Abstract: A camera device having favorable multiplication characteristics (quantum efficiency) as well as improved sensitivity in a visible light region (especially the region on the red side) and a method of manufacturing the same are provided. The camera device includes a hole injection stop layer, a first photoelectric converting layer including selenium, a second photoelectric converting layer having spectral sensitivity characteristics which are different from those of the first photoelectric converting layer, a third photoelectric converting layer including selenium, and an electron injection stop layer. As a result, it is possible to improve multiplication characteristics (quantum efficiency) and to improve the sensitivity in the visible light region (especially the region on the red side) simultaneously.

Abstract: A camera device having favorable multiplication characteristics (quantum efficiency) as well as improved sensitivity in a visible light region (especially the region on the red side) and a method of manufacturing the same are provided. The camera device includes a hole injection stop layer, a first photoelectric converting layer including selenium, a second photoelectric converting layer having spectral sensitivity characteristics which are different from those of the first photoelectric converting layer, a third photoelectric converting layer including selenium, and an electron injection stop layer. As a result, it is possible to improve multiplication characteristics (quantum efficiency) and to improve the sensitivity in the visible light region (especially the region on the red side) simultaneously.

Abstract: An imaging device for measuring the three-dimensional configuration of an object includes a mask having two optical windows, a lens which receives light which has passed through the windows, and an imaging element which receives the light collected by the lens. In addition, color filters having different spectral transmittance characteristics are provided on the two optical windows of the mask and another color filter having portions with spectral transmittance characteristics corresponding to the respective spectral transmittance characteristics of the filters on the windows is provided on the imaging element. A shutter for controlling the respective light transmissivities of the two optical windows of the mask may be provided alternatively or in conjunction with the filters to control the transmissivities of the windows, especially in synchronization with scanning of the imaging element across the light beams from the windows.

Abstract: In a charge transfer device including spaced apart channels on a semiconductor substrate, first electrodes are disposed in gaps between the channels, second electrodes are disposed opposite alternate channels overlapping the adjacent first electrodes, and a third continuous electrode overlies the alternating channels and first and second electrodes in the charge transfer direction. A first clock phase is obtained by connecting alternate first electrodes with the adjacent second electrode in the direction of charge transfer, and a second clock phase is obtained by connecting the remaining first electrodes with the third electrode. The portion of the first electrode overlapped by the second electrode in the second clock phase is larger than that in the first clock phase for stable driving by first and second clock signals out of phase by 180.degree. and generated by a driver including a resonance circuit.

Abstract: A solid state imaging element includes a first conductivity type semiconductor substrate, a light-electricity conversion section for generating electrical charges in response to incident light including a second conductivity type layer disposed in the semiconductor substrate, a charge storage section having a layer of the second conductivity type disposed in the substrate for storing signal charges from the light-electricity conversion, transfer section for transferring signal charges from the storatge section, a first conductivity type layer disposed at the surface of substrate over the light-electricity conversion section and the charge storage section, and a light shielding film covering the transfer section wherein the concentration of dopant impurities in the charge storage section is higher than that in the light-electricity conversion section.

Abstract: An electronic still camera which is provided with a video RAM temporarily storing a video signal outputted from an image pickup element, and reads out the video signal stored in the video RAM so as to record the signal in a floppy disc or format-convert it for a printer or an NTSC system, whereby the operation timing of the image pickup element can be controlled independently of other apparatus utilizing the output of the element, resulting in that the electronic still camera is realizable of high resolution without having a high frequency characteristic of the image pickup element.

Abstract: A semiconductor device having a light transparent window includes: a wall produced at an outer contour of a light receiving section on the surface of a semiconductor chip, the molding resin which is produced after a process of inserting the chip in a metal mold. The wall and the metal mold adhere with each other for producing a space between the chip and the metal mold so that a light transparent window is produced at a light introduction section in a separate position from the wall above the chip.

Abstract: In a solid image pickup element provided with photoelectric conversion elements arrayed in two dimensions, a scanning circuit for selecting each photoelectric conversion element to scan, a vertical transfer means and a horizontal transfer means for transferring a charge of the selected photoelectric conversion element vertically and horizontally respectively, a storage part for storing the transferred charge temporarily, the improvement comprising a driving means for transferring the charge from said photoelectric conversion elements to the storage part during a horizontal blanking period.

Abstract: Diffusion self-aligned MOS transistors are applied to a solid state image sensing device so as to form in a self-alignment manner control regions (80) in which reading of signal charges from photosignal detecting regions (70) formed on a semiconductor (1) to charge transfer regions (30) is controlled.

Abstract: A CSD type solid-state imaging device having horizontal transfer means for transferring charges stored at the storage electrodes in the horizontal direction and gates for selecting elements having excess charges and drains for draining the excess charges, both provided at the vertical transfer means at the neighbourhood of the storage electrode. The charges of a plurality of light-electricity conversion elements provided spaced apart from each other by a distance of more than two picture elements in the vertical direction are read out to the vertical transfer means within a same horizontal blanking period and signal charges corresponding to at least more than one picture element are drained to the drain through the gate while transferring the charges in the vertical direction.

Abstract: A solid-state image sensor including pixels including photodetectors (111-148) for detecting light signals and charge sweep devices (210-240) for transferring signal charges. The pixels are arranged in first and second directions orthogonal to each other. A transfer gate scanning circuit (600) sequentially selects a pixel row from a plurality of pixel rows arranged in a second direction. A charge sweep device scanning circuit (700) supplies readout signals to the selected pixel rows so that signal charges may be read out, a plurality of times, within a horizontal scanning interval from the photodetectors (111-148).

Abstract: This invention relates to an apparatus for thermal diffusion by means of high frequency induction heating suitable for mass production of semiconductor substrates of uniform quality; wherein a plurality of heating bases, each made of a material having good electric conductivity, and carrying semiconductor substrates, are continuously fed through a furnace tube where the bases are heated by means of high frequency wave excitation in order that each semiconductor substrate receives substantially the same thermal treatment.

Abstract: A gaseous atmosphere control apparatus for heat-treating semiconductors in a uniform gaseous atmosphere condition is disclosed. The control apparatus is provided with a reaction pipe through which semiconductor wafers are transferred to be heat-treated. A gas distribution pipe is fixed to the inside wall of the reaction pipe for guiding the transfer of the wafers and supplying heat-treating gas in the reaction pipe. The distribution pipe is provided with a plurality of blow-off holes, the diameter thereof being made wider as the pipe extends longitudinally, to thereby control the gaseous atmosphere condition in the reaction pipe to be uniform.

Abstract: The invention discloses an apparatus for thermal diffusion of semiconductor devices, wherein a plurality of wafer boats each made of a refractory material and adapted to carry a predetermined number of wafers to be processed are sequentially fed into a furnace tube containing a high temperature, diffusion gas atmosphere and continuously transported at a predetermined speed through the furnace tube so that each wafer may have substantially the same thermal treatment and high productivity may be attained.

Abstract: An electronic still camera which is provided with a video RAM temporarily storing a video signal outputted from an image pickup element, and reads out the video signal stored in the video RAM so as to record the signal in a floppy disc or format-convert it for a printer or an NTSC system, whereby the operation timing of the image pickup element can be controlled independently of other apparatus utilizing the output of the element, resulting in that the electronic still camera is realizable of high resolution without having a high frequency characteristic of the image pickup element.