Abstract: A display apparatus includes a micro-light-emitting device comprising at least two device-side electrodes, a driving substrate comprising at least two driving substrate-side electrodes, and at least two metal layers, each metal layer being interposed between a corresponding device-side electrode and a corresponding driving substrate-side electrode, and connecting the corresponding device-side electrode to the corresponding driving substrate-side electrode. A distance between adjacent driving substrate-side electrodes, among the at least two driving substrate-side electrodes, is greater than a distance between adjacent device-side electrodes, among the at least two device-side electrodes, and each metal layer of the at least two metal layers is a metal formed by undergoing heating without pressure applied thereto and then curing during a process of connecting the at least two device-side electrodes to the at least two driving substrate-side electrodes.

Abstract: A method of manufacturing a display apparatus, a display apparatus, and a structure for manufacturing a display apparatus are provided. The method of manufacturing a display apparatus includes: forming a micro-light-emitting diode (LED) chip on a relay substrate such that a chip-side electrode is exposed; transferring the micro-LED chip from the relay substrate to a driving substrate including a driving substrate-side electrode; and bonding the chip-side electrode to the driving substrate-side electrode.

Abstract: [Object] To provide a sputtering target for producing an oxide semiconductor thin film having high properties, which serves as a substitute for IGZO, and a method of producing the same. [Solving Means] In order to achieve the above-mentioned object, a sputtering target according to an embodiment of the present invention includes: an oxide sintered body including indium, tin, and germanium, in which an atom ratio of germanium with respect to a total of indium, tin, and germanium is 0.07 or more and 0.40 or less, and an atom ratio of tin with respect to the total of indium, tin, and germanium is 0.04 or more and 0.60 or less. As a result, it is possible to achieve transistor characteristics of having mobility of 10 cm2/Vs or more.

Abstract: A product design system includes a first transmitting section that uses a look-up table to convert second design image data for which image correction is completed into third design image data of a color space that is represented with a thermochromic material, and transmits the third design image data derived from the conversion to an external apparatus, and a second transmitting section that transmits a decorating request based on fourth design image data that is profile-transformed from the second design image data to a decorating apparatus.

Abstract: A product design system according to an embodiment of the present disclosure includes a first transmitting section that uses a look-up table to convert second design image data for which image correction is completed into third design image data of a color space that is represented with a thermochromic material, and transmits the third design image data derived from the conversion to an external apparatus, and a second transmitting section that transmits a decorating request based on fourth design image data that is profile-transformed from the second design image data to a decorating apparatus.

Abstract: A method of manufacturing a display apparatus, a display apparatus, and a structure for manufacturing a display apparatus are provided. The method of manufacturing a display apparatus includes: forming a micro-light-emitting diode (LED) chip on a relay substrate such that a chip-side electrode is exposed; transferring the micro-LED chip from the relay substrate to a driving substrate including a driving substrate-side electrode; and bonding the chip-side electrode to the driving substrate-side electrode.

Abstract: A light emitting diode (LED) includes: a device substrate; a first semiconductor layer above the device substrate, and doped with an n-type dopant; a second semiconductor layer above the first semiconductor layer, and doped with a p-type dopant; an active layer between the first semiconductor layer and the second semiconductor layer and configured to provide light; a transparent electrode layer adjacent to an upper part of the second semiconductor layer; and a first electrode pad and a second electrode pad between the device substrate and the first semiconductor layer, the first electrode pad electronically connected with the first semiconductor layer and the second electrode pad electrically connected with the second semiconductor layer, wherein light provided by the active layer is irradiated to an outside in a direction from the active layer to the second semiconductor layer.

Abstract: A thin-film transistor according to an embodiment of the present invention includes: a gate electrode; an active layer formed of an oxide containing indium, zinc, and titanium; a gate insulating film formed between the gate electrode and the active layer; and a source electrode and a drain electrode that are electrically connected to the active layer. Atomic proportions of elements relative to the total quantity of indium, zinc, and titanium that constitute the oxide may be not less than 24 at. % and not more than 80 at. % for indium, not less than 16 at. % and not more than 70 at. % for zinc, and not less than 0.1 at. % and not more than 20 at. % for titanium.

Abstract: A recording device according to the present disclosure includes: a writer that rewrites schedule information visibly recorded on a recording medium and corresponding to a time from first schedule information to second schedule information; and a generator that generates the second schedule information on the basis of a time.

Abstract: An oxide semiconductor thin film according to an embodiment of the present invention includes: an oxide semiconductor containing In, Zn, Ti, and Sn, an atomic ratio of (In+Sn)/(In+Zn+Ti+Sn) being not less than 0.36 and not more than 0.92, an atomic ratio of Sn/(In+Sn) being not less than 0.02 and not more than 0.46, an atomic ratio of Sn/(In+Zn+Ti+Sn) being not less than 0.01 and not more than 0.42, an atomic ratio of Ti/(In+Zn+Ti+Sn) being not less than 0.01 and not more than 0.10.

Abstract: The present invention provides a complete-circulation-type bio-toilet system in which adjustment tanks capable of storing water to be treated are arranged before and after a septic tank, thereby enabling stable provision of the system without stopping the system even when the system is in heavy use.

Abstract: A light emitting diode (LED) includes: a device substrate; a first semiconductor layer above the device substrate, and doped with an n-type dopant; a second semiconductor layer above the first semiconductor layer, and doped with a p-type dopant; an active layer between the first semiconductor layer and the second semiconductor layer and configured to provide light; a transparent electrode layer adjacent to an upper part of the second semiconductor layer; and a first electrode pad and a second electrode pad between the device substrate and the first semiconductor layer, the first electrode pad electronically connected with the first semiconductor layer and the second electrode pad electrically connected with the second semiconductor layer, wherein light provided by the active layer is irradiated to an outside in a direction from the active layer to the second semiconductor layer.

Abstract: An advertisement consideration calculating system according to an embodiment of the present disclosure includes: a receiving section that receives location information and time information of a moving body; and a determining section that determines a consideration for advertisement posting on the moving body on the basis of the location information and the time information received by the receiving section.

Abstract: A vibration motor includes a motor including a rotor including a shaft disposed along a center axis and a stator radially opposed to the rotor, a metal vibrator including a groove in which one end in an axial direction of the shaft is disposed, a caulk that is located at an opening facing in a radial direction of the groove and fixes a circumferential surface of the shaft, and a weld that fixes the vibrator and the shaft at a position different from that of the caulk.

Abstract: A recording device according to the present disclosure includes: a writer that rewrites schedule information visibly recorded on a recording medium and corresponding to a time from first schedule information to second schedule information; and a generator that generates the second schedule information on the basis of a time.

Abstract: An oxide-sintered-body sputtering target according to an embodiment of the present invention is formed of a sintered body containing an indium oxide, a zinc oxide, a titanium oxide, and a zirconium oxide, an atomic ratio of titanium with respect to a sum of indium, zinc, and titanium being not less than 0.1% and not more than 20%, a weight ratio of zirconium with respect to a sum of the indium oxide, the zinc oxide, the titanium oxide, and the zirconium oxide being not less than 10 ppm and not more than 2,000 ppm.

Abstract: A thin-film transistor according to an embodiment of the present invention includes: a gate electrode; an active layer formed of an oxide containing indium, zinc, and titanium; a gate insulating film formed between the gate electrode and the active layer; and a source electrode and a drain electrode that are electrically connected to the active layer. Atomic proportions of elements relative to the total quantity of indium, zinc, and titanium that constitute the oxide may be not less than 24 at. % and not more than 80 at. % for indium, not less than 16 at. % and not more than 70 at. % for zinc, and not less than 0.1 at. % and not more than 20 at. % for titanium.

Abstract: An evaporative gas generating device and a method for producing evaporative gas. A hydrogen bromide production device and a method for producing hydrogen bromide are also disclosed. The hydrogen bromide production device is provided with an evaporative gas generating device (1) that generates bromine gas, and a reactor (3) that reacts the bromine gas with hydrogen gas to form hydrogen bromide. The evaporative gas generating device (1) is provided with a container (10) that accommodates liquid bromine (B), and heating jackets (35, 36) that supply heat to a wall surface of the container (10), and heat and evaporate the liquid bromine (B) within a liquid accommodating part (15) of the container (10) to raise the temperature of the bromine gas within the evaporative gas accommodating part (16).

Abstract: The present invention provides a compact throttle valve device with good valve responsiveness and small unnecessary vibrations, an engine, and a vehicle. A slotless brushless motor-driven throttle valve device has a throttle body provided with a tubular portion in which an intake air passage is formed, a throttle valve disposed in the tubular portion, and a slotless brushless motor serving as a drive motor for performing opening/closing drive for the throttle valve. The throttle body housing has a hole portion into which a fixing member for fixing the throttle body to a member to be attached is inserted. The hole portion is formed in the vicinity of the outer circumferential portion of the tubular portion. The compact, narrow slotless brushless motor is disposed near the hole portion formed in the throttle body, and the throttle valve device is very compact.

Abstract: A seat seating portion vibrating apparatus with high reliability and high durability. The seat seating portion vibrating apparatus includes an electric motor that comprises a rotary shaft that is disposed along a seating surface of a seat; a weight that is attached to the rotary shaft; and a case for containing the electric motor and the weight therein. The case is provided therein with a wiring space for flexing and connecting a harness for the electric motor, and is provided with a harness extending portion wherein the harness extends downward, perpendicular to the seating surface.