Abstract: Disclosed are(1) a method for preparing an aromatic secondary amino compound which comprises reacting an N-cyclohexylideneamino compound in the presence of a hydrogen moving catalyst and a hydrogen acceptor by the use of a sulfur-free polar solvent and/or a cocatalyst, and(2) a method for preparing an aromatic secondary amino compound which comprises reacting cyclohexanone or a nucleus-substituted cyclohexanone, an amine and a nitro compound corresponding to the amine in a sulfur-free polar solvent in the presence of a hydrogen moving catalyst, a cocatalyst being added or not added.

Abstract: A preparation process of a bis(3-nitrophenoxy) compound represented by the formula: ##STR1## wherein X is a direct bond, divalent hydrocarbon having from 1 to 10 carbon atoms or a divalent group selected from --C(CF.sub.3).sub.2, --CO--, --S--, --SO--, SO.sub.2 --or --O--, which comprises reacting 4,4'-bisphenol with m-dinitrobenzene in the presence of an alkali metal carbonate or alkali metal hydrogen carbonate having a particle size of 250 .mu.m or less while removing generated water from the reaction system during the reaction. In one embodiment of the process, the reaction is carried out while simultaneously adding 4,4'-bisphenol and m-dinitrobenzene to a reaction vessel which was previously charged with the base and an aprotic polar solvent.

Abstract: Disclosed is a permanent magnet which is suitable for use for a field system of an electric motor or the like and which is constituted by a single piece of magnetic material in which S and N poles are alternately continuously formed through non-magnetic flux regions or weak magnetic flux regions interposed therebetween, and further disclosed is a magnetization apparatus for magnetizing such a permanent magnet.

Abstract: This invention is an industrially efficient and improved process for the preparation of aliphatic polyisocyanates by using esters as the solvent for converting aliphatic polyamines to isocyanates.

Abstract: A laser chip is directly disposed on a support member through a mounting arrangement and a support member, the laser chip, and peripheral parts thereof are integrally sealed within a transparent plastic resin. In this structure, without requiring expensive materials and parts, a semiconductor laser apparatus may be manufactured by using the same materials and process as in the ordinary plastic-sealed LED, so that the cost may be reduced significantly.

Abstract: N-substituted monochlorosuccinimides e.g., N-phenylmonochlorosuccinimide, can be prepared in a high yield by reacting a maleamic acid, e.g., N-phenylmaleamic acid, with phosgene in the presence of a catalyst, e.g., dimethylformamide.

Abstract: Diphenylamines or N,N'-diphenyl-phenylenediamines can be obtained by heat-reacting an aniline or a phenylenediamine with preferably an excess of a phenol in an amount of 4 to 20 moles per mole of the aniline or phenylenediamine in th presence of a hydrogen transfer catalyst and a cyclohexanone corresponding to said phenol.The excess phenol used in the reaction undergoes reduction in the reaction system to form a cyclohexanone, which in turn reacts with the aniline or phenylenediamine to form a Schiff base and is thus consumed. The Schiff base forms the intended product by means of a dehydrogenation reaction, and the hydrogen evolved at this time reduces the phenol to form a cyclohexanone.The phenol present in excess thus becomes in the system a solvent, a starting material for the cyclohexanone, and an acceptor of the hydrogen that forms as a by-product at the time of formation of the intended product.

Abstract: A process for producing a cyclic urea is provided. The process comprises reacting a diamine expressed by the formula (II)R-HN-R'-NH-R (II)wherein R represents hydrogen atom or a lower alkyl group and R' represent dimethylene group, a lower alkyl group-substituted dimethylene group, trimethylene group, a lower alkyl group-substituted trimethylene group, tetramethylene group, a lower alkyl group-substituted tetramethylene group, but a case where R represents hydrogen atom and R' represent dimethylene group, a case where R represents hydrogen atom and R' represents a lower alkyl group-substituted dimethylene group and a case where R represent methyl group and R' represents dimethylene group are excluded, with phosgene in the presence of a dehydrochlorinating agent. In the process, the diamine is first converted to its hydrochloride, followed by reacting the hydrochloride with phosgene in water solvent while maintaining a pH of the reaction liquid in the range of 5.0 to 8.

Abstract: A process for producing a cyclic diamine which comprises reacting a diamine of the formulaR--HN--R'--NH--R (II)wherein R represents a lower alkyl group and R' represents a lower alkyl group-substituted dimethylene group, trimethylene group, a lower alkyl group-substituted trimethylene group, tetramethylene group or a lower alkyl group-substituted tetramethylene group with urea in the presence of a polar solvent and at 180.degree. C. or higher, to obtain a cyclic urea ##STR1## wherein R and R' are each as defined above, the production yield being more improved by carrying out the initial period reaction at 140.degree. C. or lower.

Abstract: Diphenylamines or N,N'-diphenyl-phenylenediamines can be obtained by heat-reacting an aniline or a phenylenediamine with preferably an excess of a phenol in an amount of 4 to 20 moles per mole of the aniline or phenylenediamine in the presence of a hydrogen transfer catalyst and a cyclohexanone corresponding to said phenol.The excess phenol used in the reaction undergoes reduction in the reaction system to form a cyclohexanone, which in turn reacts with the aniline or phenylenediamine to form a Schiff base and is thus consumed. The Schiff base forms the intended product by means of a dehydrogenation reaction, and the hydrogen evolved at this time reduces the phenol to form a cyclohexanone.The phenol present in excess thus becomes in the system a solvent, a starting material for the cyclohexanone, and an acceptor of the hydrogen that forms as a by-product at the time of formation of the intended product.

Abstract: Diphenylamines or N,N'-diphenyl-phenylenediamines can be obtained by heat-reacting an aniline or a phenylenediamine with preferably an excess of a phenol in an amount of 4 to 20 moles per mole of the aniline or phenylenediamine in the presence of a hydrogen transfer catalyst and a cyclohexanone corresponding to said phenol.The excess phenol used in the reaction undergoes reduction in the reaction system to form a cyclohexanone, which in turn reacts with the aniline or phenylenediamine to form a Schiff base and is thus consumed. The Schiff base forms the intended product by means of a dehydrogenation reaction, and the hydrogen evolved at this time reduces the phenol to form a cyclohexanone.The phenol present in excess thus becomes in the system a solvent, a starting material for the cyclohexanone, and an acceptor of the hydrogen that forms as a by-product at the time of formation of the intended product.

Abstract: Disclosed herein are novel linear copolymers having weight average molecular weight of 500-30,000 and comprising structural units represented by the following formulae (I), (II), (III) and (IV): ##STR1## wherein R.sub.1, R.sub.2 and R.sub.3 mean individually an alkyl group having 4 or fewer carbon atoms and R.sub.4 denotes an alkyl, cycloalkyl, aralkyl or phenyl group, and multivalent metal salts thereof in each of which the multivalent metal forms the multivalent metal salt between carboxyl groups within the same molecule of the copolymer or between different molecules of the copolymer; color-developing agents comprising multivalent metal-modified resins of the copolymers; and color-developing sheets obtained by coating the color-developing agents on their surfaces.

Abstract: An improved process of producing 1, 3-dialkyl-2-imidazolidinones directly from N, N'-dialkylethylenediamine and urea with a high yield is provided, which process comprises reacting a N, N'-dialkylethylenediamine of the formula ##STR1## wherein R represents --CH.sub.3, --C.sub.2 H.sub.5, --C.sub.3 H.sub.7 or --C.sub.4 H.sub.9, with urea at 180.degree. C. or higher in the presence of a polar solvent, to obtain a 1, 3-dialkyl-2-imidazolidinone of the formula ##STR2## and preferably comprises carrying out the reaction at two stages, that is, the initial period reaction being carried out at 140.degree. C. or lower to from a 1, 1'-dialkyl-1 1'-dimethylenebisurea and successively the latter reaction being carried out at 180.degree. C. or higher.

Abstract: A semiconductor substrate having a groove with a dove-tail-shaped cross section is used as a substrate and thereon, several epitaxial layers including an active layer are formed and a current injection region is formed immediately above the groove; the semiconductor laser attains a high power lasing with the fundamental transverse mode.

Abstract: A method for selectively diffusing impurities such as zinc into the substrate of a compound semiconductor such as gallium arsenide (GaAs). The method makes use of a diffusion mask in such a manner that the thickness of the oxygen-containing layer at the interface between the diffusion mask and the semiconductor substrate is less than 20.ANG. so that the abnormal transverse diffusion that would otherwise occur at the interface in the vicinity of the opening of the diffusion mask on the semiconductor surface is suppressed. The result is an increased accuracy in the diffusion pattern of the impurities.

Abstract: A semiconductor apparatus which includes a semiconductor substrate with semi-insulating properties and with a first region of a first conductivity type which will become the emitter region and a second region of the same first conductivity type which will become a collector region with the first and second regions formed in the semi-insulating semiconductor substrate and spaced apart from each other and a third region of a second conductivity type formed in the semi-insulating conductor substrate between the first and second regions and with forward biasing voltage applied between the third and first regions so as to form an imaginary base region in the semi-insulating semiconductor substrate beneath the third region due to implanted majority carriers from the third region so that the semiconductor apparatus operates as a bipolar transistor and wherein at least the first and/or the third regions consist of a plurality of regions.