Abstract: In a semiconductor integrated circuit device, semiconductor elements formed in active regions included in a first element formation portion (stress transition region) in a peripheral circuit formation portion are not electrically driven, while only semiconductor elements of a second element formation portion (steady stress region) are electrically driven. Therefore, the second element formation portion in the peripheral circuit formation portion is located away from an outer STI region so as to be hardly affected by compressive stress.

Abstract: A first film and a second film are formed on a semiconductor substrate in this order. A resist pattern is formed on the second film. An opening is formed by removing the second film exposed between the resist pattern at a state where the second film remains on the bottom. A first removal preventing film is formed on the side wall of the opening and the residual film is removed at a state where the projecting part of the second film protruding from the sidewall to the opening remains. The first film exposed in the opening is removed. A second removal preventing film is formed on the first removal preventing film and the surface of the semiconductor substrate exposed in the opening is removed at a state where the projecting part of the semiconductor substrate protruding from the side wall to the opening remains and a round part is formed at the projecting part of the semiconductor substrate. The semiconductor substrate exposed in the opening is further removed.

Abstract: The semiconductor comprises an n-channel transistor forming region and a p-channel transistor forming region, which are disposed while being sectioned by an element isolation region. The stress caused by contact plugs in the n-channel transistor forming region and the stress caused by contact plugs in the p-channel transistor forming region are made different from each other. With this, it enables to increase the drive current of both the n-channel transistor and p-channel transistor without changing the dimensions of the active region and the element isolation region.

Abstract: A semiconductor device includes a circuit formation region which is formed in a semiconductor substrate and includes a plurality of element formation regions surrounded by isolation regions, respectively. A stress effect relief region of a predetermined width is formed around the circuit formation region to relieve a stress effect of the isolation regions on the operation characteristics of elements formed in the element formation regions and a plurality of dummy features are formed in the stress effect relief region and other part of the circuit formation region than the element formation regions at predetermined distances, the dummy features having the same composition as the element formation regions and predetermined planar dimensions.

Abstract: In a semiconductor integrated circuit device, semiconductor elements formed in active regions included in a first element formation portion (stress transition region) in a peripheral circuit formation portion are not electrically driven, while only semiconductor elements of a second element formation portion (steady stress region) are electrically driven. Therefore, the second element formation portion in the peripheral circuit formation portion is located away from an outer STI region so as to be hardly affected by compressive stress.

Abstract: At least a part of the inner leads 1a of a lead frame 1 is covered with a plating for a metallic fine wire connection, at least the entire portion where the lead frame 1 joins with the adhesive layer 2 is covered by at least one metal or alloy thereof different from the metallic fine wire connecting use plating. The metal or alloy is selected from the group consisting of gold, platinum, iridium, rhodium, palladium, ruthenium, indium, tin, molybdenum, tungsten, gallium, zinc, chromium, niobium, tantalum, titanium and zirconium. Thereby, generation of defects, such as leakage and shorting, due to ion migration can be prevented.

Abstract: A slenderized crimped animal fiber with a fixed slenderized form having a lowering rate of tensile strength for undyed spun yarn of no less than 10%, fiber contraction in boiling water of no more than 1%, an alkali solubility of no more than 22% by weight and a UB solubility of no more than 35% by weight, wherein the slenderized crimped animal fiber is prepared by being drawn by practically 1.20 to 1.60 times after an anisotropic swelling is given to the animal fiber consisting of bilateral structure using swelling plasticization with base.

Abstract: A slenderized crimped animal fiber with a fixed slenderized form having a lowering rate of tensile strength for undyed spun yarn of no less than 10%, fiber contraction in boiling water of no more than 1%, an alkali solubility of no more than 22% by weight and a UB solubility of no more than 35% by weight, wherein the slenderized crimped animal fiber is prepared by being drawn by practically 1.20 to 1.60 times after an anisotropic swelling is given to the animal fiber consisting of bilateral structure using swelling plasticization with base.

Abstract: Described is a semiconductor device comprising a plurality of inner leads each made of copper or an alloy thereof; a heat sink made of copper or an alloy thereof, bonded to one end of each of a plurality of inner leads via an insulating adhesive layer and having a semiconductor element mounted on the heat sink via a metal wire; a plurality of metal wires each electrically connecting the semiconductor element and each of the plurality of inner leads; an encapsulating resin encapsulating the semiconductor element and the plurality of metal wires; and a plurality of outer leads protruded outside of the encapsulating resin and bent in the gullwing form. The encapsulating resin has been added with an additive forming a compound with an ionic impurity so that water at the peeling portion becomes near neutral, which prevents reaction and easy elution of copper, thereby preventing Cu migration.

Abstract: In a semiconductor device which is assembled by making use of a lead frame 1 with a heat radiation plate 3 in which the lead frame 1 and the heat radiation plate 3 made of copper or copper alloy are joined by an adhesive layer 2 formed on a surface of the heat radiation plate 3 and at least a part of the inner leads 1a of the lead frame 1 is applied of a plating for a metallic fine wire connection, at least the entire portion where the lead frame 1 joins with the adhesive layer 2 is covered by at least one metal or alloy thereof different from the metallic fine wire connecting use plating selected from the group consisting of gold, platinum, iridium, rhodium, palladium, ruthenium, indium, tin, molybdenum, tungsten, gallium, zinc, chromium, niobium, tantalum, titanium and zirconium. Thereby, generation of inconveniences such as leakage and shorting due to ion migration can be prevented.

Abstract: A brokerage server for performing brokerage service is provided to assist a user to select auction sites on the Internet when the user puts up own commodity at a plurality of auction sites simultaneously. The brokerage server, which resides between an information terminal of the user and the auction servers, in response to a process request from the information terminal, refers to an auction site information file to locate the auction sites suitable for the user's requirement and send information about the suitable auction sites to an information terminal so that the user can select the auction sites where the commodity is to be put up. After registration of the commodity at the selected auction servers, the brokerage server monitors trading status at the sites where the commodity is auctioned and performs the brokerage service until termination of the auction.

Abstract: A gas sensor has a housing, a gas sensing element held by the housing and having a gas contact portion and an element cover for covering the gas contact portion. The element cover has a double pipe structure formed by layering an outer pipe and an inner pipe. The outer pipe has an outer bottom portion having an outer bottom hole and an outer side portion having plural outer side holes. The inner pipe has an inner bottom portion having an inner bottom hole and an inner side portion having plural inner side holes disposed not to overlap the outer side holes. A spacing D of 0.2-1.0 mm is formed between the outer bottom portion and the inner bottom portion. As a result, flow resistance in the spacing D is relatively high, and the sample gas sufficiently and more smoothly flows toward the gas sensing element. Therefore, the element cover prevents condensed water from entering the inside of the gas sensor and improves response of the gas sensor.

Abstract: A thin film transistor (TFT) device including a first electrode including at least one of a gate, a source and a drain formed on a transparent insulating substrate, an insulating film layer covering both the first electrode and the transparent insulating substrate, and a transparent film electrode formed on the insulating film layer. The first electrode includes a first layer made of pure Al or Al alloy and a second layer, formed by an impurity selected from one of N, O, Si and C, added to the Al or Al alloy. The second layer of the first electrode is provided at an interconnection between the transparent film electrode and the first layer of the first electrode.

Abstract: According to the present invention, an oxygen concentration detector includes a housing, a detecting element inserted into said housing and a cover for covering a top portion of said detecting element. The detecting element is made of solid electrolyte and includes an atmospheric chamber therein. The cover includes an air vent portion for introducing air into said atmospheric chamber of the detecting element. The detecting element includes an air introducing path open to the atmospheric chamber at a side wall of the detecting element. It is possible to provide an oxygen concentration detector capable of introducing the air into the atmospheric chamber and maintaining an oxygen concentration in the atmospheric chamber at the same level as an atmosphere constantly.

Abstract: The present invention relates to a process for producing fibers or a textile product, in which fibers or textile products containing polyurethane fibers are dipped in a water-soluble wool protein solution to selectively adsorb a wool protein on the polyurethane fibers.

Abstract: A sliver of animal wool is subjected to hot drawing under its wet state to provide a slenderized fine animal wool.

Abstract: The present invention provides the process for treating the animal hairs by solubilization wherein the animal hairs can be treated in a short time without any complicated operations and special apparatuses, and the process for recovering the solubilized product of the animal hairs wherein said product can be recovered simply and efficiently from the solution thereof. The former is the process for treating animal hairs by solubilization which comprises solubilizing the animal hairs in a weak alkaline liquid medium in the presence of an oxidizing agent whose concentration is high. The latter is the process for recovering a solubilized product of animal hairs which comprises admixing a solution of said product with an organic acid or an aqueous solution thereof to precipitate said product.

Abstract: A vehicular headlight having an inner lens and a hood, which is painted to block light, integrally made of a light-transmissible resin so that no opening is formed between the inner lens and the hood. As a result, no light can leak through such an opening, and the adjustment gap between the inner lens and reflector cannot be seen through the opening. Since the inner lens and the hood are constituted by a single component, the number of components of the headlight is reduced to decrease the number of steps of assembly thereof.

Abstract: The present invention relates to an automotive headlamp construction in which chromatic aberation is substantially eliminated. The headlamp includes an elliptic reflector, a light source disposed at a first focal point of the elliptic reflector, a condenser lens which is focused generally at a second focal point of the elliptic reflector, and an outer lens provided in front of the condenser lens. In accordance with the invention, the radius of curvature of the outer lens is reduced at a vertically middle portion thereof to form an angled portion through which light from the light source passes. The angled portion acts as a lens having a focal length such that chromatic aberration of the condenser lens is canceled out.

Abstract: A liquid starch solution suitable for saccharification into a maltose-containing product is obtained by suspending starch in water, adding to the starch suspension a heat resistant .alpha.-amylase and a carbonate, adjusting the resultant mixture to a pH value in the range of from 7.5 to 8.0, and thermally treating the resultant starch milk while repressing possible hydrolysis of starch molecules.