Abstract: A method for manufacturing an all solid-state lithium-ion rechargeable battery includes forming a first active material layer on a base, forming a solid electrolyte layer connected to the first active material layer, forming a second active material layer connected to the solid electrolyte layer, and repairing a short-circuit defect produced between the first active material layer and the second active material layer by supplying a repair current between the first active material layer and the second active material layer.

Abstract: To provide a vacuum processing apparatus capable of supporting and conveying a substrate by a method suitable for a processing content in each processing step and capable of suppressing various mechanisms provided within a processing chamber from being adversely affected. More particularly, the CVD chamber of the apparatus is configured to be horizontal, and hence the above-mentioned problem can be solved. Further, by configuring a sputtering apparatus as the vertical type processing apparatus, problems with abnormal electrical discharge can be solved.

Abstract: An apparatus for manufacturing a thin film solar cell that increase homogeneity in film characteristics. In a process of conveying a substrate from one roll to another roll, a power generation layer, which is a laminated body of a plurality of semiconductor layers, is formed in a plurality of film formation compartments partitioned along a conveying direction between the roll pair. A plurality of flat application electrodes are laid out in the conveying direction facing toward the substrate in each film formation compartment. Each flat application electrode includes a power supply terminal supplied with high frequency power in a VHF band. When the wavelength of the high frequency power is represented by ?, the distance between an edge of the flat application electrode and the power supply terminal is set to be shorter than ?/4 in a direction orthogonal to the conveying direction.

Abstract: The object of this invention is to provide a winding type plasma CVD apparatus in which quality of a layer can be made uniform by supplying a reaction gas uniformly to a deposition area of a film, and can perform a self-cleaning process of a deposition portion in the path of deposition onto the film. A film (22) is supported between a pair of movable rollers (33, 34) arranged on the upstream side and downstream side of the deposition portion (25) with regard to the traveling direction of the film, and then the film (22) is made to travel substantially linearly at the deposition position. Consequently, the distance between a shower plate (37) and the film (22) is kept constant, and the quality of the layer is made homogeneous. The film is heated by means of a metal belt (40) traveling simultaneously on the back side of the film. The moveable rollers (33, 34) ascend from the deposition position to the self-cleaning position, and the film (22) can be separated from the shower plate (37).

Abstract: The invention offers a method of producing a Bi-2223-based superconducting wire. The method has a preparing step for preparing a precursor 11 that is a powder and that is formed of a main phase, composed of a Bi-2212 phase, and the remainder, composed of a Bi-2223 phase and a nonsuperconducting phase, a filling step for filling the precursor into a metallic tube at a pressure of at most 1,000 Pa, and a sealing step for sealing the metallic tube filled, at a pressure of at most 1,000 Pa, with the precursor. The method decreases the intrusion of impurity gases and thereby increases the critical-current value.

Abstract: The object of this invention is to provide a winding type plasma CVD apparatus in which quality of a layer can be made uniform by supplying a reaction gas uniformly to a deposition area of a film, and can perform a self-cleaning process of a deposition portion in the path of deposition onto the film. A film (22) is supported between a pair of movable rollers (33, 34) arranged on the upstream side and downstream side of the deposition portion (25) with regard to the traveling direction of the film, and then the film (22) is made to travel substantially linearly at the deposition position. Consequently, the distance between a shower plate (37) and the film (22) is kept constant, and the quality of the layer is made homogeneous. The film is heated by means of a metal belt (40) traveling simultaneously on the back side of the film. The moveable rollers (33,34) ascend from the deposition position to the self-cleaning position, and the film (22) can be separated from the shower plate (37).

Abstract: A plasma processing method and a plasma processing system provide advantages of a high degree of selectivity, a large area processing capability and an enhanced precision level. A plasma processing method according to the invention is so designed that a pulse modulation power is supplied alternately to the plasma generating power supply and the substrate bias power supply by referring to the time taken by gas to diffuse from the center of electric discharge to the substrate. In a plasma processing system according to the invention, the plasma generating power supply and the substrate bias power supply are provided with modulation means for supplying a pulse modulation power alternately to the plasma generating section and the substrate electrode by referring to the time taken by gas to diffuse from the center of electric discharge to the substrate.

Abstract: A plasma processing method and a plasma processing system provide advantages of a high degree of selectivity, a large area processing capability and an enhanced precision level. A plasma processing method according to the invention is so designed that a pulse modulation power is supplied alternately to the plasma generating power supply and the substrate bias power supply by referring to the time taken by gas to diffuse from the center of electric discharge to the substrate. In a plasma processing system according to the invention, the plasma generating power supply and the substrate bias power supply are provided with modulation means for supplying a pulse modulation power alternately to the plasma generating section and the substrate electrode by referring to the time taken by gas to diffuse from the center of electric discharge to the substrate.

Abstract: A plasma ashing apparatus has a vacuum treatment chamber for receiving therein a substrate coated with a resist film, a reactive gas introduction pipe equipped with a plasma applicator, a vacuum exhaust pipe, a heating means for heating the substrate, and two pieces of electrodes disposed in parallel to each other. One of the electrodes is a substrate electrode and the other thereof is a circular counter electrode. These two electrodes are commonly connected to an RF power source to thereby constitute a cathode electrode. Multiple concentric perforations are formed in the counter electrode except for a rib portion. A central perforation is formed in the center of the counter electrode. The concentric perforations are formed at every distance, from the center, equivalent to a diameter of the central perforation, while leaving circular electrode surfaces corresponding in width to a radius of of the perforation.

Abstract: In a method for plasma ashing a resist film coated on a substrate, the temperature of the substrate is controlled initially at temperatures below that at which explosion of the resist film occurs until a surface portion of a resist film has been removed. Thereafter, the substrate temperature is increased to remove the remaining portions of the resist film. An apparatus for conducting the method includes a plurality of supports, which may be movably disposed within a vacuum treatment chamber for moving the substrate away from a source of heat and for moving the substrate into contact with the heating source.

Abstract: A naphthalene derivative having the general formula: ##STR1## wherein R represents hydrogen, an alkyl group having 1 to 8 carbon atoms, an R.sup.1 O (CH.sub.2).sub.n group, or a benzyl group, R.sup.1 represents hydrogen or a lower alkyl group, and n represents an integer of 2 or 3.This compound in the leuco state can be stably isolated and can produce a strong and fast color upon oxidation under moderate conditions. This compound can be advantageously included in a hair dye composition, which is capable of stably and safely dyeing hair with a good and stable color under moderate conditions.