Abstract: A manufacturing method of a semiconductor element from a pattern formed body capable of attaining patterning efficiently with a high precision. The method includes a photoresist pattern formation step, a hydrophilicity imparting step and a photoresist pattern peeling step.

Abstract: A scintillator material is made of a zinc-oxide single crystal grown on a +C surface or a ?C surface of a plate-shaped seed crystal of zinc oxide including a C surface as a main surface. The zinc-oxide single crystal contains In and Li. In response to an incident radiation, the scintillator material emits fluorescence of less than 20-ps fluorescence lifetime.

Abstract: The present invention is to provide a device capable of having an easy production process and achieving a long lifetime. A device comprising a substrate, two or more electrodes facing each other disposed on the substrate and a positive hole injection transport layer disposed between two electrodes among the two or more electrodes, wherein the positive hole injection transport layer comprises a transition metal-containing nanoparticle containing at least a transition metal compound including a transition metal oxide, a transition metal and a protecting agent, or at least the transition metal compound including the transition metal oxide, and the protecting agent.

Abstract: A main object of the present invention is to disclose a manufacturing method of the pattern formed body capable of attaining patterning efficiently with a high precision. To attain the object, the present invention provides a method comprising: a photoresist pattern formation step of forming a photoresist pattern on a hydrophobic layer formed on a substrate and having a surface exhibiting hydrophobicity; a hydrophilicity imparting step of radiating an energy onto the surface of the hydrophobic layer on which the photoresist pattern is formed, thereby making the surface hydrophilic to form hydrophilic areas; and a photoresist pattern peeling step of peeling the photoresist pattern and forming a hydrophilic/hydrophobic pattern on the hydrophobic layer surface, in which the hydrophilic area and hydrophobic area covered previously with the photoresist pattern in the hydrophilicity imparting step are formed in a pattern form.

Abstract: A device capable of having an easy production process and achieving a long lifetime. The device has a substrate, two or more electrodes facing each other disposed on the substrate and a positive hole injection transport layer disposed between two electrodes among the two or more electrodes. The positive hole injection transport layer has a transition metal-containing nanoparticle containing at least a transition metal compound including a transition metal oxide, a transition metal and a protecting agent, or at least the transition metal compound including the transition metal oxide, and the protecting agent.

Abstract: A method of producing an organic transistor which can form directly an organic semiconductor layer in pattern by simple processes and can produce an organic transistor excellent in transistor characteristics.

Abstract: A method of producing an organic transistor which can form directly an organic semiconductor layer in pattern by simple processes and can produce an organic transistor excellent in transistor characteristics.

Abstract: There are provided an organic bistable element, which is simple in structure, can eliminate the need to increase production process steps, and has a low switching voltage, a memory device using the same, and a method for driving the organic bistable element and the memory device. The organic bistable element has a laminate structure comprising an organic thin film interposed between a first electrode and a second electrode.

Abstract: There are provided an organic bistable element, which is simple in structure, can eliminate the need to increase production process steps, and has a low switching voltage, a memory device using the same, and a method for driving the organic bistable element and the memory device. The organic bistable element having a laminate structure comprises a laminate interposed between a first electrode and a second electrode, the laminate comprising two or more layers of organic thin film which are each dielectric and are different from each other in electrical conductivity. The two or more layers of organic thin film have been stacked on top of each other through an electrically conductive thin film.

Abstract: There are provided an organic bistable element, which is simple in structure, can eliminate the need to increase production process steps, and has a low switching voltage, a memory device using the same, and a method for driving the organic bistable element and the memory device. The organic bistable element having a laminate structure comprises a laminate interposed between a first electrode and a second electrode, the laminate comprising two or more layers of organic thin film which are each dielectric and are different from each other in electrical conductivity. The two or more layers of organic thin film have been stacked on top of each other through an electrically conductive thin film.

Abstract: There are provided an organic bistable element, which is simple in structure, can eliminate the need to increase production process steps, and has a low switching voltage, a memory device using the same, and a method for driving the organic bistable element and the memory device. The organic bistable element has a laminate structure comprising an organic thin film interposed between a first electrode and a second electrode.