Abstract: A detecting device includes a conversion device having a substrate, a pixel electrode formed of a transparent conductive oxide, a impurity semiconductor portion, and a semiconductor portion, the pixel electrode, impurity semiconductor portion, and semiconductor portion having been formed upon the substrate in that order from the substrate side. The impurity semiconductor portion includes a first region including a place in contact with the pixel electrode, and a second region situated nearer to the semiconductor portion than the first region. Concentration of dopant in the second region is higher than concentration of dopant in the first region.

Abstract: A detecting apparatus includes a substrate that permits visible light to pass therethrough, a converting element that includes a pixel electrode, an impurity semiconductor layer, and a semiconductor layer arranged in that order from a side adjacent to the substrate and is configured to convert radiation or light into charge, and a light source configured to emit the visible light through the substrate to the converting element. The pixel electrode includes a metal layer that permits the visible light to pass therethrough.

Abstract: A source follower connection line connects a gate of a source follower thin film transistor in a first pixel with a gate of a source follower thin film transistor in a second pixel, between adjacent first and second pixel, and a driving circuit turns the transfer thin film transistor in the first pixel region ON and turns the transfer thin film transistor in the second pixel OFF to make the transfer thin film transistor in the first pixel region output the signal of the first pixel.

Abstract: In a method of manufacturing a detection device including a plurality of pixels arrayed on a substrate, the pixels each including a switch element and a conversion element including an impurity semiconductor layer disposed on an electrode, which is disposed above the switch element, which is isolated per pixel, and which is made of a transparent conductive oxide joined to the switch element, and further including an interlayer insulating layer, which is made of an organic material, which is disposed between the switch elements and the electrodes, and which covers the switch elements, the method includes insulating members each made of an inorganic material and disposed to cover the interlayer insulating layer between adjacent two of the electrodes in contact with the interlayer insulating layer, and forming an impurity semiconductor film covering the insulating members and the electrodes and becoming the impurity semiconductor layer.

Abstract: A matrix substrate which realizes high operation speed and high reliability and which is capable of obtaining a high-quality image while the number of connection terminals is limited is provided. The matrix substrate includes pixels arranged in a matrix, N driving lines arranged in a row direction, P connection terminals where P is less than N, a demultiplexer which is disposed between the connection terminals and the driving lines and which includes first polycrystalline semiconductor TFTs and first connection terminals. The demultiplexer further includes second polycrystalline semiconductor TFTs and the second control lines used to maintain the driving lines to have non-selection voltages which bring the pixels to non-selection states between one of the connection terminals and two or more of the driving lines.

Abstract: A manufacturing method for a detection apparatus is provided. The method includes depositing a first impurity semiconductor layer and a first intrinsic semiconductor layer in this order on a plurality of first electrodes arranged in an array above a substrate. The method also includes patterning the first intrinsic semiconductor layer and the first impurity semiconductor layer and thereby dividing the first intrinsic semiconductor layer and the first impurity semiconductor layer so as to cover each of the plurality of first electrodes separately. The method further includes depositing a second intrinsic semiconductor layer on the patterned first intrinsic semiconductor layer.

Abstract: A detection apparatus includes a conversion layer configured to convert incident light or radiation into a charge, electrodes configured to collect a charge produced as a result of the conversion by the conversion layer, and impurity semiconductor layers arranged between the electrodes and the conversion layer. The conversion layer is arranged over the electrodes so as to cover the electrodes. A part of the conversion layer which covers a region between an adjacent pair of the electrodes includes a portion smaller in film thickness than a part of the conversion layer which covers edges of the electrodes.

Abstract: A detecting apparatus formed on a substrate, includes a plurality of pixels arranged in a matrix, and a signal line electrically connected to the pixels. Each of the pixels includes a sensing element that converts radiant ray or light to electric charges, an amplification thin film transistor that outputs an electric signal based on an amount of the electric charges, a capacitor that holds an electric signal output by the amplification thin film transistor, and a transfer thin film transistor that transfers an electric signal held in the capacitor to the signal line.

Abstract: A detection apparatus includes a plurality of conversion elements, an interlayer insulating layer, and a covering layer. Each of the plurality of conversion elements includes an electrode electrically connected to a corresponding one of a plurality of switching elements and a semiconductor layer disposed on the electrode. The interlayer insulating layer is disposed so as to cover the plurality of switching elements and composed of an organic material, and has a surface including a first region and a second region located outside the first region. The electrodes are disposed on the surface of the interlayer insulating layer in the first region. The covering layer is disposed on the surface of the interlayer insulating layer in the second region and composed of an inorganic material.

Abstract: A detection apparatus includes a driving circuit unit in which a plurality of unit circuits each including a first circuit that supplies conducting voltage of a switch element of a pixel based on voltage included in a clock signal to a driving wire in accordance with an initiation signal and a second circuit that supplies non-conducting voltage of the switch element to the driving wire in accordance with a termination signal are provided for the plurality of corresponding driving wires and a control unit that supplies the clock signal to the driving circuit unit. The control unit supplies control voltage to the plurality of unit circuits, and each of the plurality of unit circuits further includes a third circuit that continues to supply the non-conducting voltage to the corresponding driving wire in accordance with the control voltage.

Abstract: There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting element, characterized in that a mechanism is provided in which a semiconductor constituting the TFT is irradiated with at least a part of light whose wavelength is longer than a predetermined wavelength among the light emitted by the light emitting element.

Abstract: A detection apparatus includes a plurality of pixels and a plurality of signal wires arranged on a substrate, in which each of the plurality of pixels includes a switch element arranged on the substrate and a conversion element arranged on the switch element, the conversion element includes a first electrode which is arranged on the switch element and electrically connected to the switch element and a semiconductor layer arranged over a plurality of the first electrodes, and a plurality of the switch elements is electrically connected to the plurality of signal wires, and the detection apparatus further includes a constant potential wire which is supplied with a constant potential, in which the first electrode is electrically connected to the constant potential wire in apart of pixels among the plurality of pixels.

Abstract: A detection apparatus includes a substrate which includes a plurality of pixels arranged in a matrix and adapted to generate pixel signals, a plurality of drive lines arranged in a column direction and each connected in common to a plurality of pixels in a row direction, a plurality of data lines arranged in the row direction and each connected in common to a plurality of pixels in the column direction, connection terminals smaller in number than the data lines, and a multiplexer unit provided between the connection terminals and the data lines; a read circuit provided with a reset switch for supplying a constant potential to the connection terminals and connected to the connection terminals; a drive circuit adapted to control driving of the plurality of pixels; and a control circuit adapted to supply a control signal to the substrate and the read circuit.

Abstract: An active matrix panel includes a gate line connected to control electrodes of a plurality of transistors; and a drive circuit supplying the gate line with a conducting voltage and a non-conducting voltage. The drive circuit includes a shift register including a plurality of shift register unit circuits connected to each other, and a demultiplexer including a plurality of demultiplexer unit circuits into which output signals of the shift register unit circuits are input. The demultiplexer unit circuit includes a first transistor for supplying the gate line with the conducting voltage, and a second transistor for supplying the gate line with the non-conducting voltage. The first transistor is changed from a non-conducting state into a conducting state when the second transistor is in the conducting state.

Abstract: There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting element, characterized in that a mechanism is provided in which a semiconductor constituting the TFT is irradiated with at least a part of light whose wavelength is longer than a predetermined wavelength among the light emitted by the light emitting element.

Abstract: In a method of manufacturing a detection device including pixels on a substrate, each pixel including a switch element and a conversion element including an impurity semiconductor layer on an electrode, which is disposed above the switch element and isolated per pixel, the switch element and the electrode being connected in a contact hole formed in a protection layer and an interlayer insulating layer, which are disposed between the switch elements and the electrodes, the method includes forming insulating members over the interlayer insulating layer between the electrodes in contact with the interlayer insulating layer, forming an impurity semiconductor film covering the insulating members and the electrodes, and forming a coating layer covering an area of the protection layer where an orthographically-projected image of a portion of the electrode is positioned, the portion including a level difference within the contact hole.

Abstract: A detection device includes conversion elements, each including a first electrode disposed on a substrate, a semiconductor layer disposed on the first electrode, an impurity semiconductor layer disposed on the semiconductor layer and including at least a first region and a second region, and a second electrode disposed on the first region of the impurity semiconductor layer in contact with the impurity semiconductor layer. Sheet resistance in the second region disposed at a position where the impurity semiconductor layer is not contacted with the second electrode is less than sheet resistance in the first region.

Abstract: A method of manufacturing a radiation detection apparatus including a photoelectric conversion element that includes a first electrode placed above a substrate, a semiconductor layer placed on the first electrode, and a second electrode placed on the semiconductor layer includes forming the second electrode by removing a portion of an electrode layer formed over the semiconductor layer, the portion being located on an end section of the semiconductor layer. The method includes forming an insulating layer such that the insulating layer covers a portion of the semiconductor layer that is not covered by the second electrode. The method further includes forming a third electrode on at least one portion of the insulating layer such that the insulating layer is interposed between the third electrode and the end section of the semiconductor layer.

Abstract: A method for controlling the threshold voltage of a semiconductor element having at least a semiconductor as a component is characterized in including a process to measure one of a threshold voltage and a characteristic value serving as an index for the threshold voltage; a process to determine one of the irradiation intensity, irradiation time, and wavelength of the light for irradiating the semiconductor based on one of the measured threshold voltage and the measured characteristic value serving as the index for the threshold voltage; and a process to irradiate light whose one of the irradiation intensity, irradiation time, and wavelength has been determined onto the semiconductor; wherein the light irradiating the semiconductor is a light having a longer wavelength than the wavelength of the absorption edge of the semiconductor, and the threshold voltage is changed by the irradiation of the light.

Abstract: Provided is a semiconductor device including a semiconductor element including at least a semiconductor as a component characterized by including: a mechanism for irradiating the semiconductor with light having a wavelength longer than an absorption edge wavelength of the semiconductor; and a dimming mechanism, provided in a part of an optical path through which the light passes, for adjusting at least one factor selected from an intensity, irradiation time and the wavelength of the light, wherein a threshold voltage of the semiconductor element is varied by the light adjusted by the dimming mechanism.