Abstract: A high density magnetic bubble memory device comprises first magnetic bubble propagation tracks formed through ion implantation and second magnetic bubble propagation tracks formed of a soft magnetic material. Regions exclusive of those destined for realization of the second magnetic bubble propagation tracks are deeply ion-implanted. Gaps between the adjacent soft magnetic material films are also deeply ion-implanted. The second magnetic bubble propagation tracks may be shallowly ion-implanted or not implanted with ions.

Abstract: In a magnetic bubble replicator having a soft magnetic material element for propagating a magnetic bubble along an edge thereof in response to a change in a direction of an external magnetic field and a hairpin-shaped conductor superimposed on the soft magnetic material element, an angle between a slit of the conductor and a propagation path of the magnetic bubble of the soft magnetic material element is set to no less than 90 degrees, preferably 5-85 degrees, and more preferably to 45-60 degrees.

Abstract: A magnetic bubble device in which a first propagation path having a cyclic shape formed by selectively implanting ions into a magnetic film capable of holding magnetic bubbles and a second propagation path including soft magnetic material elements are arranged on the same chip. A soft magnetic material element having a length in the direction perpendicular to the direction of bubble propagation in the first propagation path which is not less than 2.5 times the period of the first propagation path is included in the junction between the first and second propagation paths.

Abstract: A magnetic bubble memory device is disclosed in which a magnetic bubble propagation circuit for forming a minor loop is formed by ion implantation, and at least part of a major line or major loop and at least part of connecting portions between the minor loop and the major line or major loop are formed of a film of a soft magnetic material.

Abstract: A hybrid magnetic bubble memory device includes a first magnetic bubble propagation tracks formed of a portion of the boundary between first and second regions of a magnetic medium film having uniaxial anisotropy and adapted to be applied with a magnetic field in a direction perpendicular to the magnetic medium film to generate magnetic bubbles therein, and a second magnetic bubble propagation tracks formed of a soft magnetic material film on the magnetic medium film and connected with the first magnetic bubble propagation tracks. The first region is implanted with ions under ion-implant conditions different from those for the second region, and thus the above boundary is produced.

Abstract: A conductor pattern and an ion implanting mask are simultaneously formed by photoetching a conductor film through a single photoresist pattern. An area on which a conductor pattern is to be formed is covered with a photoresist, and ions are implanted to a magnetic film using the conductor film portion not convered with the photoresist, to form a magnetic bubble propagation track. The ion implantation mask and the conductor pattern are formed simultaneously through one mask. Accordingly, reduction of accuracy due to an error in mask alignment is prevented and the manufacturing is facilitated.

Abstract: A magnetic bubble memory device comprises a magnetic bubble propagation track formed by ion implantation. A region enclosed by the propagation track and lightly or shallowly implanted with ions on a condition differing from that for forming the propagation track or not implanted with ions at all is provided with a island-like isolated region heavily or deeply implanted with ions on the same condition as that for forming the propagation track.

Abstract: A magnetic bubble detector has a stretcher part for stretching a magnetic bubble while propagating it and a detection part for detecting the magnetic bubble while propagating it. In the magnetic bubble detector, the period of arrangement of bubble propagation elements forming the exit of the stretcher part viewed in a bubble propagation direction is larger than the period of arrangement of bubble propagation elements forming the entrance of the stretcher part viewed in a bubble propagation direction.

Abstract: Disclosed is a magnetic bubble memory device having a first bubble propagation path formed in an ion-implanted pattern and a second bubble propagation path formed of permalloy elements, both paths being spaced out from each other by a distance larger than or equal to the diameter of the magnetic bubble, and a propagation path connecting structure in which a hairpin-shaped conductor for connecting both propagation paths is disposed between them.

Abstract: A magnetic bubble memory chip comprises minor loops of a folded structure for storing information in the form of magnetic bubble domains, and input and output tracks for transferring the information into and out of the minor loops. The input and output tracks have a pattern repetition period that is four or more times as large as a fundamental period of each of the minor loops.

Abstract: A magnetic bubble memory has a first bubble propagation track formed with an ion-implanted pattern and a second bubble propagation track formed with permalloy members connected to each other to form a storage loop. The arrangement is such that a position of an attractive magnetic pole created in one of the permalloy members coincides with a position of an attractive charged wall appearing in the ion-implanted layer at a junction of the first and second bubble propagation tracks when a driving magnetic field is in a particular range of direction.

Abstract: A micro-pattern element has a heat discharge pattern formed on a fine line portion of a conductor pattern. Breakage caused by temperature elevation of the conductor pattern in response to the application of an electric current and resulting electromigration can be effectively prevented by the heat-discharge pattern formed on the fine line portion of the conductor pattern; thus, the reliability of the micro-pattern element can be remarkably improved.

Abstract: A magnetic bubble detector according to this invention is constructed of a bubble expander, a bubble detecting element and a bubble sweeper. Moreover, at least the width of soft magnetic material-elements constituting the bubble detecting element as taken in the propagating direction of magnetic bubbles is greater than that of soft magnetic material-elements constituting the bubble expander. As a result, the distances or distance between the magnetic bubble in the bubble detecting element and the magnetic bubbles or bubble in the bubble expander and/or the bubble sweeper increase or increases, so that a magnetic bubble detector of high signal-to-noise ratio is provided.

Abstract: A magnetic bubble memory device according to this invention comprises a plurality of minor loops, a read-out major line is disposed at one end of the minor loops through gates having a replicating function, and a magnetic bubble detector which includes a detecting line is disposed at one end of the major line. Further, a propagation length from the other end of the read-out major line to the detecting line of the magnetic bubble detector is set at a bit length which slightly exceeds four times the number of the minor loops. For this reason, a continuous read-out operation at high speed is permitted without the influence of replicate pulses.

Abstract: The magnetic bubble memory device of this invention is arranged such that a magnetic bubble detector and a nucleation type magnetic bubble generator in a chip are made to operate at different phases of the same operation cycle of a rotating magnetic field. Therefore, the operation time of the magnetic bubble detector and the operation time of the nucleation type magnetic bubble detector are completely separated from each other, although they are involved by the same cycle of operation of the rotating magnetic field. Consequently, the magnetic bubble detector can perform the detecting operation, without being affected by large amounts of noise which are generated during the operation of the nucleation type magnetic bubble generator.