Patents by Inventor Masayoshi Minami

Masayoshi Minami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240153760
    Abstract: Described herein is a technique capable of improving the controllability of firm thickness distribution. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber; a first and a second gas supply system; an exhaust system; and a controller for controlling the first and the second gas supply system and the exhaust system to form a film. The first gas supply system includes: a first and a second storage part; a first gas supply port for supplying a gas stored in the first storage part from an outer periphery toward a center of a substrate; and a second gas supply for supplying the gas stored in the second storage part from the outer periphery along a direction more inclined toward the outer periphery than a direction from the outer periphery toward the center of the substrate.
    Type: Application
    Filed: January 19, 2024
    Publication date: May 9, 2024
    Inventors: Kazuyuki OKUDA, Syuzo SAKURAI, Yasuhiro INOKUCHI, Masayoshi MINAMI
  • Patent number: 11915927
    Abstract: Described herein is a technique capable of improving the controllability of firm thickness distribution. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber; a first and a second gas supply system; an exhaust system; and a controller for controlling the first and the second gas supply system and the exhaust system to form a film. The first gas supply system includes: a first and a second storage part; a first gas supply port for supplying a gas stored in the first storage part from an outer periphery toward a center of a substrate; and a second gas supply for supplying the gas stored in the second storage part from the outer periphery along a direction more inclined toward the outer periphery than a direction from the outer periphery toward the center of the substrate.
    Type: Grant
    Filed: May 13, 2022
    Date of Patent: February 27, 2024
    Assignee: Kokusai Electric Corporation
    Inventors: Kazuyuki Okuda, Syuzo Sakurai, Yasuhiro Inokuchi, Masayoshi Minami
  • Patent number: 11885016
    Abstract: There is included (a) forming a film on a substrate by supplying a first processing gas to the substrate in a process container; (b) forming a first pre-coated film, which has a first thickness and has a material different from a material of the film formed in (a), in the process container by supplying a second processing gas into the process container in a state in which the substrate does not exist in the process container; and (c) forming a second pre-coated film, which has a second thickness smaller than the first thickness and has the same material as the material of the film formed in (a), on the first pre-coated film formed in the process container by supplying a third processing gas into the process container in the state in which the substrate does not exist in the process container.
    Type: Grant
    Filed: June 17, 2022
    Date of Patent: January 30, 2024
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kazuhiro Harada, Shintaro Kogura, Masayoshi Minami
  • Publication number: 20240014032
    Abstract: There is included (a) loading a substrate where a conductive metal-element-containing film is exposed on a surface of the substrate into a process chamber under a first temperature; (b) supplying a reducing gas to the substrate while raising a temperature of the substrate to a second temperature higher than the first temperature in the process chamber; (c) forming a first film on the metal-element-containing film, by supplying a first process gas, which does not include an oxidizing gas, to the substrate under the second temperature in the process chamber; and (d) forming a second film on the first film such that the second film is thicker than the first film, by supplying a second process gas, which includes an oxidizing gas, to the substrate under a third temperature higher than the first temperature in the process chamber.
    Type: Application
    Filed: September 25, 2023
    Publication date: January 11, 2024
    Applicant: Kokusai Electric Corporation
    Inventors: Kazuhiro HARADA, Masayoshi Minami, Shintaro Kogura, Shogo Otani, Yoshitomo Hashimoto
  • Patent number: 11823886
    Abstract: There is included (a) loading a substrate where a conductive metal-element-containing film is exposed on a surface of the substrate into a process chamber under a first temperature; (b) supplying a reducing gas to the substrate while raising a temperature of the substrate to a second temperature higher than the first temperature in the process chamber; (c) forming a first film on the metal-element-containing film, by supplying a first process gas, which does not include an oxidizing gas, to the substrate under the second temperature in the process chamber; and (d) forming a second film on the first film such that the second film is thicker than the first film, by supplying a second process gas, which includes an oxidizing gas, to the substrate under a third temperature higher than the first temperature in the process chamber.
    Type: Grant
    Filed: September 2, 2021
    Date of Patent: November 21, 2023
    Assignee: Kokusai Electric Corporation
    Inventors: Kazuhiro Harada, Masayoshi Minami, Shintaro Kogura, Shogo Otani, Yoshitomo Hashimoto
  • Patent number: 11728159
    Abstract: There is provided a technique that includes: (a) forming a film on a substrate in a process container by performing a cycle a predetermined number of times, the cycle including: supplying an oxygen-containing gas from a pipe made of metal to the substrate in the process container; supplying a nitrogen-and-hydrogen-containing gas from the pipe to the substrate in the process container; and (b) forming a layer on an inner surface of the pipe by supplying a surface treatment gas into the pipe such that the surface treatment gas chemically reacts with the inner surface of the pipe.
    Type: Grant
    Filed: January 13, 2022
    Date of Patent: August 15, 2023
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kazuhiro Harada, Masayoshi Minami, Akihito Yoshino, Masaya Nishida, Naoko Kitagawa, Shintaro Kogura, Shogo Otani
  • Publication number: 20230220546
    Abstract: There is provided a technique of cleaning an inside of a process container, including: (a) removing substances adhered in a process container set at a first temperature by supplying a first gas at a first flow rate into the process container and exhausting the inside of the process container; (b) physically desorbing and removing residual fluorine in the process container set at a second temperature by supplying a second gas at a second flow rate into the process container and exhausting the inside of the process container; and (c) chemically desorbing and removing residual fluorine in the process container set at a third temperature by supplying a third gas at a third flow rate into the process container and exhausting the inside of the process container.
    Type: Application
    Filed: February 24, 2023
    Publication date: July 13, 2023
    Applicant: Kokusai Electric Corporation
    Inventors: Kazuhiro HARADA, Shingo NOHARA, Yuji URANO, Yasunobu KOSHI, Masayoshi MINAMI
  • Patent number: 11618947
    Abstract: There is provided a technique of cleaning an inside of a process container, including: (a) removing substances adhered in a process container set at a first temperature by supplying a first gas at a first flow rate into the process container and exhausting the inside of the process container; (b) physically desorbing and removing residual fluorine in the process container set at a second temperature by supplying a second gas at a second flow rate into the process container and exhausting the inside of the process container; and (c) chemically desorbing and removing residual fluorine in the process container set at a third temperature by supplying a third gas at a third flow rate into the process container and exhausting the inside of the process container.
    Type: Grant
    Filed: September 17, 2019
    Date of Patent: April 4, 2023
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kazuhiro Harada, Shingo Nohara, Yuji Urano, Yasunobu Koshi, Masayoshi Minami
  • Publication number: 20220316058
    Abstract: There is included (a) forming a film on a substrate by supplying a first processing gas to the substrate in a process container; (b) forming a first pre-coated film, which has a first thickness and has a material different from a material of the film formed in (a), in the process container by supplying a second processing gas into the process container in a state in which the substrate does not exist in the process container; and (c) forming a second pre-coated film, which has a second thickness smaller than the first thickness and has the same material as the material of the film formed in (a), on the first pre-coated film formed in the process container by supplying a third processing gas into the process container in the state in which the substrate does not exist in the process container.
    Type: Application
    Filed: June 17, 2022
    Publication date: October 6, 2022
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kazuhiro HARADA, Shintaro KOGURA, Masayoshi MINAMI
  • Patent number: 11434564
    Abstract: There is included (a) forming a film on a substrate by supplying a first processing gas to the substrate in a process container; (b) forming a first pre-coated film, which has a first thickness and has a material different from a material of the film formed in (a), in the process container by supplying a second processing gas into the process container in a state in which the substrate does not exist in the process container; and (c) forming a second pre-coated film, which has a second thickness smaller than the first thickness and has the same material as the material of the film formed in (a), on the first pre-coated film formed in the process container by supplying a third processing gas into the process container in the state in which the substrate does not exist in the process container.
    Type: Grant
    Filed: August 6, 2020
    Date of Patent: September 6, 2022
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kazuhiro Harada, Shintaro Kogura, Masayoshi Minami
  • Publication number: 20220277952
    Abstract: Described herein is a technique capable of improving the controllability of firm thickness distribution. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber; a first and a second gas supply system; an exhaust system; and a controller for controlling the first and the second gas supply system and the exhaust system to form a film. The first gas supply system includes: a first and a second storage part; a first gas supply port for supplying a gas stored in the first storage part from an outer periphery toward a center of a substrate; and a second gas supply for supplying the gas stored in the second storage part from the outer periphery along a direction more inclined toward the outer periphery than a direction from the outer periphery toward the center of the substrate.
    Type: Application
    Filed: May 13, 2022
    Publication date: September 1, 2022
    Inventors: Kazuyuki OKUDA, Syuzo SAKURAI, Yasuhiro INOKUCHI, Masayoshi MINAMI
  • Patent number: 11361961
    Abstract: Described herein is a technique capable of improving the controllability of firm thickness distribution. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber; a first and a second gas supply system; an exhaust system; and a controller for controlling the first and the second gas supply system and the exhaust system to form a film. The first gas supply system includes: a first and a second storage part; a first gas supply port for supplying a gas stored in the first storage part from an outer periphery toward a center of a substrate; and a second gas supply for supplying the gas stored in the second storage part from the outer periphery along a direction more inclined toward the outer periphery than a direction from the outer periphery toward the center of the substrate.
    Type: Grant
    Filed: February 11, 2020
    Date of Patent: June 14, 2022
    Assignee: Kokusai Electric Corporation
    Inventors: Kazuyuki Okuda, Syuzo Sakurai, Yasuhiro Inokuchi, Masayoshi Minami
  • Publication number: 20220139693
    Abstract: There is provided a technique that includes: (a) forming a film on a substrate in a process container by performing a cycle a predetermined number of times, the cycle including: supplying an oxygen-containing gas from a pipe made of metal to the substrate in the process container; supplying a nitrogen-and-hydrogen-containing gas from the pipe to the substrate in the process container; and (b) forming a layer on an inner surface of the pipe by supplying a surface treatment gas into the pipe such that the surface treatment gas chemically reacts with the inner surface of the pipe.
    Type: Application
    Filed: January 13, 2022
    Publication date: May 5, 2022
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kazuhiro HARADA, Masayoshi MINAMI, Akihito YOSHINO, Masaya NISHIDA, Naoko KITAGAWA, Shintaro KOGURA, Shogo OTANI
  • Patent number: 11257669
    Abstract: There is provided a technique that includes: (a) forming a film on a substrate in a process container by performing a cycle a predetermined number of times, the cycle including: supplying a precursor gas from a first pipe made of metal and a first nozzle to the substrate in the process container; supplying an oxygen-containing gas from a second pipe made of metal and a second nozzle to the substrate in the process container; and supplying a nitrogen-and-hydrogen-containing gas from the second pipe and the second nozzle to the substrate in the process container; and (b) forming a continuous fluorine-containing layer on an inner surface of the second pipe by supplying a fluorine-containing gas into the second pipe such that the fluorine-containing gas chemically reacts with the inner surface of the second pipe.
    Type: Grant
    Filed: December 12, 2019
    Date of Patent: February 22, 2022
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kazuhiro Harada, Masayoshi Minami, Akihito Yoshino, Masaya Nishida, Naoko Kitagawa, Shintaro Kogura, Shogo Otani
  • Publication number: 20210398794
    Abstract: There is included (a) loading a substrate where a conductive metal-element-containing film is exposed on a surface of the substrate into a process chamber under a first temperature; (b) supplying a reducing gas to the substrate while raising a temperature of the substrate to a second temperature higher than the first temperature in the process chamber; (c) forming a first film on the metal-element-containing film, by supplying a first process gas, which does not include an oxidizing gas, to the substrate under the second temperature in the process chamber; and (d) forming a second film on the first film such that the second film is thicker than the first film, by supplying a second process gas, which includes an oxidizing gas, to the substrate under a third temperature higher than the first temperature in the process chamber.
    Type: Application
    Filed: September 2, 2021
    Publication date: December 23, 2021
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kazuhiro HARADA, Masayoshi MINAMI, Shintaro KOGURA, Shogo OTANI, Yoshitomo HASHIMOTO
  • Publication number: 20210040609
    Abstract: There is included (a) forming a film on a substrate by supplying a first processing gas to the substrate in a process container; (b) forming a first pre-coated film, which has a first thickness and has a material different from a material of the film formed in (a), in the process container by supplying a second processing gas into the process container in a state in which the substrate does not exist in the process container; and (c) forming a second pre-coated film, which has a second thickness smaller than the first thickness and has the same material as the material of the film formed in (a), on the first pre-coated film formed in the process container by supplying a third processing gas into the process container in the state in which the substrate does not exist in the process container.
    Type: Application
    Filed: August 6, 2020
    Publication date: February 11, 2021
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kazuhiro HARADA, Shintaro KOGURA, Masayoshi MINAMI
  • Publication number: 20200258736
    Abstract: Described herein is a technique capable of improving the controllability of firm thickness distribution. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber; a first and a second gas supply system; an exhaust system; and a controller for controlling the first and the second gas supply system and the exhaust system to form a film. The first gas supply system includes: a first and a second storage part; a first gas supply port for supplying a gas stored in the first storage part from an outer periphery toward a center of a substrate; and a second gas supply for supplying the gas stored in the second storage part from the outer periphery along a direction more inclined toward the outer periphery than a direction from the outer periphery toward the center of the substrate.
    Type: Application
    Filed: February 11, 2020
    Publication date: August 13, 2020
    Inventors: Kazuyuki OKUDA, Syuzo SAKURAI, Yasuhiro INOKUCHI, Masayoshi MINAMI
  • Publication number: 20200194250
    Abstract: There is provided a technique that includes: (a) forming a film on a substrate in a process container by performing a cycle a predetermined number of times, the cycle including: supplying a precursor gas from a first pipe made of metal and a first nozzle to the substrate in the process container; supplying an oxygen-containing gas from a second pipe made of metal and a second nozzle to the substrate in the process container; and supplying a nitrogen-and-hydrogen-containing gas from the second pipe and the second nozzle to the substrate in the process container; and (b) forming a continuous fluorine-containing layer on an inner surface of the second pipe by supplying a fluorine-containing gas into the second pipe such that the fluorine-containing gas chemically reacts with the inner surface of the second pipe.
    Type: Application
    Filed: December 12, 2019
    Publication date: June 18, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kazuhiro HARADA, Masayoshi MINAMI, Akihito YOSHINO, Masaya NISHIDA, Naoko KITAGAWA, Shintaro KOGURA, Shogo OTANI
  • Patent number: 10640869
    Abstract: A method of manufacturing a semiconductor device, includes: supplying precursor gas into process chamber in which plural substrates are accommodated by sequentially performing: supplying inert gas at first inert gas flow rate from first nozzle into the process chamber; supplying the inert gas at second inert gas flow rate higher than the first inert gas flow rate from the first nozzle into the process chamber while supplying precursor gas from the first nozzle into the process chamber; and supplying the inert gas at the first inert gas flow rate from the first nozzle into the process chamber while the process chamber is evacuated from an upstream side of flow of the precursor gas; stopping supply of the precursor gas; removing the precursor gas remaining in the process chamber; supplying reaction gas from a second nozzle into the process chamber; and removing the reaction gas remaining in the process chamber.
    Type: Grant
    Filed: September 20, 2018
    Date of Patent: May 5, 2020
    Assignee: Kokusai Electric Corporation
    Inventors: Kazuyuki Okuda, Masayoshi Minami, Yoshinobu Nakamura, Kosuke Takagi, Yukinao Kaga, Yuji Takebayashi
  • Publication number: 20200095678
    Abstract: There is provided a technique of cleaning an inside of a process container, including: (a) removing substances adhered in a process container set at a first temperature by supplying a first gas at a first flow rate into the process container and exhausting the inside of the process container; (b) physically desorbing and removing residual fluorine in the process container set at a second temperature by supplying a second gas at a second flow rate into the process container and exhausting the inside of the process container; and (c) chemically desorbing and removing residual fluorine in the process container set at a third temperature by supplying a third gas at a third flow rate into the process container and exhausting the inside of the process container.
    Type: Application
    Filed: September 17, 2019
    Publication date: March 26, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kazuhiro HARADA, Shingo NOHARA, Yuji URANO, Yasunobu KOSHI, Masayoshi MINAMI