Patents by Inventor Masayoshi Minami
Masayoshi Minami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190093222Abstract: A method of manufacturing a semiconductor device, includes: supplying precursor gas into process chamber in which plural substrates are accommodated by sequentially performing: supplying inert gas at first inert gas flow rate from first nozzle into the process chamber; supplying the inert gas at second inert gas flow rate higher than the first inert gas flow rate from the first nozzle into the process chamber while supplying precursor gas from the first nozzle into the process chamber; and supplying the inert gas at the first inert gas flow rate from the first nozzle into the process chamber while the process chamber is evacuated from an upstream side of flow of the precursor gas; stopping supply of the precursor gas; removing the precursor gas remaining in the process chamber; supplying reaction gas from a second nozzle into the process chamber; and removing the reaction gas remaining in the process chamber.Type: ApplicationFiled: September 20, 2018Publication date: March 28, 2019Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Kazuyuki OKUDA, Masayoshi MINAMI, Yoshinobu NAKAMURA, Kosuke TAKAGI, Yukinao KAGA, Yuji TAKEBAYASHI
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Patent number: 10081868Abstract: Provided is a technology including a nozzle base end portion which is provided in a processing chamber processing a substrate to extend in a vertical direction and into which a processing gas processing the substrate is introduced, a nozzle distal end portion which is configured in a U shape and in which a gas supply hole supplying the processing gas is provided to a side surface of the substrate, and a gas residence suppressing hole which is provided in a downstream end of the nozzle distal end portion and has a diameter larger than that of the gas supply hole.Type: GrantFiled: July 15, 2016Date of Patent: September 25, 2018Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kosuke Takagi, Ryota Sasajima, Shintaro Kogura, Naonori Akae, Risa Yamakoshi, Toshiki Fujino, Masato Terasaki, Masayoshi Minami
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Patent number: 10066294Abstract: A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: supplying a precursor gas to the substrate in a process chamber through a first nozzle; supplying an oxygen-containing gas to the substrate in the process chamber through a second nozzle made of quartz and differing from the first nozzle; and supplying a hydrogen-containing gas to the substrate in the process chamber through the second nozzle. The method further includes, prior to performing the act of forming the film, etching a surface of the second nozzle to a depth which falls within a range of 15 ?m or more and 30 ?m or less from the surface of the second nozzle.Type: GrantFiled: February 25, 2016Date of Patent: September 4, 2018Assignee: Hitachi Kokusai Electric, Inc.Inventors: Ryota Sasajima, Shintaro Kogura, Masayoshi Minami
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Patent number: 9983074Abstract: A force detector capable of preventing short-circuit fault between electrodes and allowing for downsizing. A prescribed region encompasses a projection region defined by projecting a deformation region of a force sensor element, which is deformed when a force transmission member applies a force to the force sensor element, onto a base substrate. A plurality of terminals are provided by four soldering land electrodes formed, respectively, at four corners of the base substrate. The soldering land electrodes are shaped such that a portion of each soldering land electrode is located within the projection region to form a soldering portion.Type: GrantFiled: June 26, 2015Date of Patent: May 29, 2018Assignee: HOKURIKU ELECTRIC INDUSTRY CO., LTD.Inventors: Masayoshi Minami, Tsutomu Sawai
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Patent number: 9895727Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes processing a substrate by supplying a process gas to the substrate in a process chamber. The method further includes performing a purge to an interior of the process chamber while periodically changing an internal pressure of the process chamber based on a pressure width by setting a process of supplying a purge gas into the process chamber to increase the internal pressure of the process chamber and a process of vacuum-exhausting an interior of the process chamber to decrease the internal pressure of the process chamber to one cycle and repeating the cycle a plurality of times.Type: GrantFiled: September 22, 2016Date of Patent: February 20, 2018Assignee: HITACHI KOKUSAI ELECTRIC, INC.Inventors: Yoshinobu Nakamura, Masayoshi Minami, Masayuki Asai, Kazuyuki Okuda, Yuji Urano
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Publication number: 20170160149Abstract: A force detector capable of preventing short-circuit fault between electrodes and allowing for downsizing. A prescribed region encompasses a projection region defined by projecting a deformation region of a force sensor element, which is deformed when a force transmission member applies a force to the force sensor element, onto a base substrate. A plurality of terminals are provided by four soldering land electrodes formed, respectively, at four corners of the base substrate. The soldering land electrodes are shaped such that a portion of each soldering land electrode is located within the projection region to form a soldering portion.Type: ApplicationFiled: June 26, 2015Publication date: June 8, 2017Inventors: Masayoshi Minami, Tsutomu Sawai
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Publication number: 20170087606Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes processing a substrate by supplying a process gas to the substrate in a process chamber. The method further includes performing a purge to an interior of the process chamber while periodically changing an internal pressure of the process chamber based on a pressure width by setting a process of supplying a purge gas into the process chamber to increase the internal pressure of the process chamber and a process of vacuum-exhausting an interior of the process chamber to decrease the internal pressure of the process chamber to one cycle and repeating the cycle a plurality of times.Type: ApplicationFiled: September 22, 2016Publication date: March 30, 2017Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yoshinobu NAKAMURA, Masayoshi MINAMI, Masayuki ASAI, Kazuyuki OKUDA, Yuji URANO
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Publication number: 20170051408Abstract: Provided is a technology including a nozzle base end portion which is provided in a processing chamber processing a substrate to extend in a vertical direction and into which a processing gas processing the substrate is introduced, a nozzle distal end portion which is configured in a U shape and in which a gas supply hole supplying the processing gas is provided to a side surface of the substrate, and a gas residence suppressing hole which is provided in a downstream end of the nozzle distal end portion and has a diameter larger than that of the gas supply hole.Type: ApplicationFiled: July 15, 2016Publication date: February 23, 2017Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kosuke TAKAGI, Ryota SASAJIMA, Shintaro KOGURA, Naonori AKAE, Risa YAMAKOSHI, Toshiki FUJINO, Masato TERASAKI, Masayoshi MINAMI
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Publication number: 20160244875Abstract: A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: supplying a precursor gas to the substrate in a process chamber through a first nozzle; supplying an oxygen-containing gas to the substrate in the process chamber through a second nozzle made of quartz and differing from the first nozzle; and supplying a hydrogen-containing gas to the substrate in the process chamber through the second nozzle. The method further includes, prior to performing the act of forming the film, etching a surface of the second nozzle to a depth which falls within a range of 15 ?m or more and 30 ?m or less from the surface of the second nozzle.Type: ApplicationFiled: February 25, 2016Publication date: August 25, 2016Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Ryota SASAJIMA, Shintaro KOGURA, Masayoshi MINAMI
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Patent number: 8901013Abstract: An oxygen-containing gas and a hydrogen-containing gas are supplied into a pre-reaction chamber heated to a second temperature and having the pressure set to less than an atmospheric pressure, and a reaction is induced between both gases in the pre-reaction chamber to generate reactive species, and the reactive species are supplied into the process chamber and exhausted therefrom, in which a substrate heated to the first temperature is housed and the pressure is set to less than the atmospheric pressure, and processing is applied to the substrate by the reactive species, with the second temperature set to be not less than the first temperature at this time.Type: GrantFiled: August 2, 2011Date of Patent: December 2, 2014Assignee: Hitachi Kokusai Electric Inc.Inventors: Kazuhiro Yuasa, Masanao Fukuda, Takafumi Sasaki, Yasuhiro Megawa, Masayoshi Minami
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Publication number: 20130157474Abstract: An oxygen-containing gas and a hydrogen-containing gas are supplied into a pre-reaction chamber heated to a second temperature and having the pressure set to less than an atmospheric pressure, and a reaction is induced between both gases in the pre-reaction chamber to generate reactive species, and the reactive species are supplied into the process chamber and exhausted therefrom, in which a substrate heated to the first temperature is housed and the pressure is set to less than the atmospheric pressure, and processing is applied to the substrate by the reactive species, with the second temperature set to be not less than the first temperature at this time.Type: ApplicationFiled: August 2, 2011Publication date: June 20, 2013Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kazuhiro Yuasa, Masanao Fukuda, Takafumi Sasaki, Yasuhiro Megawa, Masayoshi Minami
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Patent number: 7972979Abstract: Provided is a substrate processing method comprising: loading a substrate, on which polysilazane is applied, into a substrate process chamber; maintaining an inside of the substrate process chamber, into which the substrate is loaded, in water vapor atmosphere and depressurization atmosphere at a temperature of 400° C.; performing a first heat treatment process on the substrate in a state where the inside of the substrate process chamber is maintained in the water vapor atmosphere and the depressurization atmosphere at the temperature of 400° C.; next, increasing an inner temperature of the substrate process chamber from the temperature of 400° C. in the first heat treatment process to a temperature ranging from 900° C. to 1000° C.; and performing a second heat treatment process on the substrate in a state where the inside of the substrate process chamber is maintained in water vapor atmosphere and depressurization atmosphere at the temperature ranging from 900° C. to 1000° C.Type: GrantFiled: August 17, 2010Date of Patent: July 5, 2011Assignee: Hitachi Kokusai Electric, Inc.Inventors: Toru Harada, Masayoshi Minami
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Publication number: 20110065288Abstract: Provided is a substrate processing method comprising: loading a substrate, on which polysilazane is applied, into a substrate process chamber; maintaining an inside of the substrate process chamber, into which the substrate is loaded, in water vapor atmosphere and depressurization atmosphere at a temperature of 400° C.; performing a first heat treatment process on the substrate in a state where the inside of the substrate process chamber is maintained in the water vapor atmosphere and the depressurization atmosphere at the temperature of 400° C.; next, increasing an inner temperature of the substrate process chamber from the temperature of 400° C. in the first heat treatment process to a temperature ranging from 900° C. to 1000° C.; and performing a second heat treatment process on the substrate in a state where the inside of the substrate process chamber is maintained in water vapor atmosphere and depressurization atmosphere at the temperature ranging from 900° C. to 1000° C.Type: ApplicationFiled: August 17, 2010Publication date: March 17, 2011Applicant: HITACHI-KOKUSAI ELECTRIC INC.Inventors: Toru HARADA, Masayoshi MINAMI
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Publication number: 20110065286Abstract: At a low temperature of 500° C. to 700° C., the concentration of atomic oxygen is controlled in a wafer stacked direction, and the thickness distribution of oxide films is kept uniform in the wafer stacked direction. A semiconductor device manufacturing method includes a process of oxidizing substrates by supplying oxygen-containing gas and hydrogen-containing gas through a mixing part from an end side of a substrate arrangement region where the substrates are arranged inside the process chamber so that the gases flow toward the other end side of the substrate arrangement region, and supplying hydrogen-containing gas from mid-flow locations corresponding to the substrate arrangement region.Type: ApplicationFiled: July 22, 2010Publication date: March 17, 2011Applicant: HITACHI-KOKUSAI ELECTRIC INC.Inventors: Takafumi SASAKI, Masanao FUKUDA, Masayoshi MINAMI, Yasuhiro MEGAWA
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Patent number: 5910281Abstract: A method for restoring a dried aqueous organic gel capsule which includes aqueous organic gel hardened with a metal ion and then has been solidified by drying, wherein the method comprises immersing the solidified capsule in an aqueous solution containing the metal ion.Type: GrantFiled: June 12, 1996Date of Patent: June 8, 1999Assignee: Yazaki CorporationInventors: Yasushi Kohno, Yoichi Ido, Masayoshi Minami, Riichi Minamiguchi
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Patent number: 5791084Abstract: A method for making a gel coat of gel-coated seed easily disintegrable, in which the gel-coated seed has an aqueous gel layer water-insolubilized with a metal ion, wherein the method comprises blocking the insolubilizing action of the metal ion with a sequestering agent.Type: GrantFiled: September 23, 1997Date of Patent: August 11, 1998Assignee: Yazaki CorporationInventors: Yasushi Kohno, Masayoshi Minami, Riichi Minamiguchi
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Patent number: 5706602Abstract: A method for making a gel coat of gel-coated seed easily disintegrable, in which the gel-coated seed has an aqueous gel layer water-insolubilized with a metal ion, wherein the method comprises blocking the insolubilizing action of the metal ion with a sequestering agent.Type: GrantFiled: June 12, 1996Date of Patent: January 13, 1998Assignee: Yazaki CorporationInventors: Yasushi Kohno, Masayoshi Minami, Riichi Minamiguchi
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Patent number: 5701700Abstract: A method for storing gel-coated seeds having a gel coat comprising an aqueous gel having been water-insolubilized by a metal ion, which comprises storing the gel-coated seeds in an aqueous solution containing the metal ion.Type: GrantFiled: July 12, 1996Date of Patent: December 30, 1997Assignee: Yazaki CorporationInventors: Yasushi Kohno, Masayoshi Minami, Riichi Minamiguchi
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Patent number: D789311Type: GrantFiled: June 24, 2016Date of Patent: June 13, 2017Assignees: HITACHI KOKUSAI ELECTRIC INC., TECHNO QUARTZ INC.Inventors: Hiromi Okada, Masayuki Yamada, Satoshi Aizawa, Shinya Morita, Masayoshi Minami, Kazuhisa Osaka
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Patent number: D791091Type: GrantFiled: June 24, 2016Date of Patent: July 4, 2017Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Hiromi Okada, Shinya Morita, Satoshi Aizawa, Masayoshi Minami, Kazuyuki Okuda, Masayuki Yamada