Abstract: A variety of applications can include apparatus and/or methods of operating the apparatus in which functionalities of a memory device of the apparatus can be extended by changing data flow behaviour associated with standard commands used between a host platform and the memory device. Such functionalities can include debug capabilities. In an embodiment, a standard write command and data using a standard protocol to write to a memory device is received in the memory device, where the data is setup information to enable an extension component in the memory device. An extension component includes instructions in the memory device to execute operations on components of the memory device. The memory device can execute operations of the enabled extension component in the memory device based on the setup information. Additional apparatus, systems, and methods are disclosed.

Abstract: Devices and techniques for managing flash memory are disclosed herein. A memory controller may receive a first program request comprising first host data to be written to the flash memory. The flash memory may comprise a number of storage units with each storage unit comprising a number of storage sub-units. If the first host data is less than a remainder threshold, the memory controller may generate a first program data unit comprising the first host data and first log data describing the flash memory. The memory controller may program the program data unit to the first storage unit of the flash memory, where the first log data is written to a first storage sub-unit of the number of storage sub-unit. The memory controller may also store an indication that the first storage sub-unit is invalid.

Abstract: Various embodiments disclose a controller to manage memory devices. In an exemplary method, signals are exchanged with a host processor to allow the host processor to communicate with multiple memory devices in a memory stack as a single device, regardless of an actual number of memory devices within the memory stack. Power is provided to a single one of the multiple memory devices in the memory stack at a time to reduce power consumption. Other methods, apparatuses, and devices are also disclosed.

Abstract: A single virtualized ECC NAND controller executes an ECC algorithm and manages a stack of NAND flash memories. The virtualized ECC NAND controller allows the host processor to drive the stack of flash memory devices as a single NAND chip while the controller redirects the data to the selected NAND memory device in the stack.

Abstract: Various embodiments disclose a controller to manage memory devices. In an exemplary method, signals are exchanged with a host processor to allow the host processor to communicate with a plurality of memory devices in a memory stack as a single device, regardless of an actual number of memory devices within the memory stack. Power is provided to a single one of the plurality of the memory devices in the memory stack at a time to reduce power consumption. Other methods, apparatuses, and devices are also disclosed.

Abstract: A single virtualized ECC NAND controller executes an ECC algorithm and manages a stack of NAND flash memories. The virtualized ECC NAND controller allows the host processor to drive the stack of flash memory devices as a single NAND chip while the controller redirects the data to the selected NAND memory device in the stack.

Abstract: In various embodiments, a single virtualized error correcting code (ECC) NAND controller executes an ECC algorithm and manages a stack of NAND flash memories. The virtualized ECC NAND controller allows the host processor to drive the stack of flash memory devices as a single NAND chip while the controller redirects the data to the selected NAND memory device in the stack. In various embodiments, a controller manages a plurality of NAND memory devices. The controller provides power to a select one of the plurality of NAND memory devices at a time to conserve overall power consumption of the storage system.

Abstract: A memory device, and a method of operating same, utilize a memory buffer associated with a memory array to maintain information to be available subsequent to a program-fail event associated with the memory array.

Abstract: In accordance with some embodiments, wear leveling may be done based on the difference in age of discarded blocks and engaged blocks. Data is moved to an older discarded block from a younger engaged block. Two wear leveling bits may be used for each logical block, such that the wear leveling bits are used in alternating cycles.

Abstract: Subject matter disclosed herein relates to memory devices or accessing memory devices, and more particularly, but by way of example and not limitation, to preparation of a memory device to perform a memory access operation based at least partly on at least one indicator signal that indicates a memory access type.

Abstract: In various embodiments, a single virtualized error correcting code (ECC) NAND controller executes an ECC algorithm and manages a stack of NAND flash memories. The virtualized ECC NAND controller allows the host processor to drive the stack of flash memory devices as a single NAND chip while the controller redirects the data to the selected NAND memory device in the stack. In various embodiments, a controller manages a plurality of NAND memory devices. The controller provides power to a select one of the plurality of NAND memory devices at a time to conserve overall power consumption of the storage system.

Abstract: In accordance with some embodiments, wear leveling may be done based on the difference in age of discarded blocks and engaged blocks. Data is moved to an older discarded block from a younger engaged block. Two wear leveling bits may be used for each logical block, such that the wear leveling bits are used in alternating cycles.

Abstract: A memory device, and a method of operating same, utilize a first memory buffer associated with a first memory array and a second memory buffer associated with a second memory array to maintain information subsequent to a program-fail event associated with the first memory array and to provide the information to the second memory array.

Abstract: A single virtualized ECC NAND controller executes an ECC algorithm and manages a stack of NAND flash memories. The virtualized ECC NAND controller allows the host processor to drive the stack of flash memory devices as a single NAND chip while the controller redirects the data to the selected NAND memory device in the stack.

Abstract: In accordance with some embodiments, wear leveling may be done based on the difference in age of discarded blocks and engaged blocks. Data is moved to an older discarded block from a younger engaged block. Two wear leveling bits may be used for each logical block, such that the wear leveling bits are used in alternating cycles.

Abstract: Subject matter disclosed herein relates to an erasable memory device, and more particularly to a securely erasable flash memory device.

Abstract: Subject matter disclosed herein relates to memory devices or accessing memory devices, and more particularly, but by way of example and not limitation, to preparation of a memory device to perform a memory access operation based at least partly on at least one indicator signal that indicates a memory access type.

Abstract: Read latencies in a memory array can be reduced by suspending write operations. In one example, a process includes, writing a first data set into a memory, interrupting a second memory write operation, and reading the first data set from the memory after interrupting the second memory write operation.

Abstract: A single virtualized ECC NAND controller executes an ECC algorithm and manages a stack of NAND flash memories. The virtualized ECC NAND controller allows the host processor to drive the stack of flash memory devices as a single NAND chip while the controller redirects the data to the selected NAND memory device in the stack.

Abstract: Subject matter disclosed herein relates to a memory device, and a method of operating same, including a memory buffer to maintain information to be available after a failure to program the information to a memory array.