Abstract: An electrode-less plasma lamp, comprising generally of a bulb containing a gas-fill and light emitter(s) that is excited to produce light using radio-frequency (RF) energy. The present lamp includes compact air resonators/waveguides that use grounded coupling-elements with integrated bulb assemblies to reduce the size of the resonator and improve the performance of the lamp as well as reduce cost and simplify manufacturability.

Abstract: A plasma electrodeless lamp comprises a substantially hollow metallic body, closely receiving two coupling elements, the first coupling element connected to the output of an RF amplifier, and the second coupling element connected to the input of an RF amplifier. The first coupling element is conductively connected (grounded) to metallic lamp body at its top surface, while the second coupling element is not. The lamp further comprises a vertical metallic post, the post being grounded to the metallic lamp body at the post's bottom surface. The lamp further comprises a dielectric sleeve which closely receives the metallic post, and which is in turn closely supported by the lamp body or alternatively or in combination a tuning stub. The lamp further comprises a bulb that is closely received by the metallic post, and that encloses a gas-fill which forms a radiant plasma when excited.

Abstract: Described is a plasma electrode-less lamp. The device comprises an electromagnetic resonator and an electromagnetic radiation source conductively connected with the electromagnetic resonator. The device further comprises a pair of field probes, the field probes conductively connected with the electromagnetic resonator. A gas-fill vessel is formed from a closed, transparent body, forming a cavity. The gas-fill vessel is not contiguous with (detached from) the electromagnetic resonator and is capacitively coupled with the field probes. The gas-fill vessel further contains a gas within the cavity, whereby the gas is induced to emit light when electromagnetic radiation from the electromagnetic radiation source resonates inside the electromagnetic resonator, the electromagnetic resonator capacitively coupling the electromagnetic radiation to the gas, which becomes a plasma and emits light.

Abstract: An electrode-less plasma lamps, comprising generally of a bulb containing a gas-fill that is excited to produce light using radio-frequency (RF) energy. In specific embodiments, the use of grounded coupling-elements with integrated bulb assemblies simplifies manufacturability, improves resonant frequency control, and enables the use of solid, partially filled, and hollow lamp bodies.

Abstract: An electromagnetic resonator may be used for efficient heating and/or reaction of materials. More particularly, resonator-based systems may be used for efficient pyrolysis, gasification, incineration (or other similar processes) of feedstock including but not limited to biomass, petroleum, industrial chemicals and waste materials using RF resonators and adaptively tunable RF resonators. A processing architecture based on the use of resonators is presented.

Abstract: Described is a plasma electrode-less lamp. The device comprises an electromagnetic resonator and an electromagnetic radiation source conductively connected with the electromagnetic resonator. The device further comprises a pair of field probes, the field probes conductively connected with the electromagnetic resonator. A gas-fill vessel is formed from a closed, transparent body, forming a cavity. The gas-fill vessel is not contiguous with (detached from) the electromagnetic resonator and is capacitively coupled with the field probes. The gas-fill vessel further contains a gas within the cavity, whereby the gas is induced to emit light when electromagnetic radiation from the electromagnetic radiation source resonates inside the electromagnetic resonator, the electromagnetic resonator capacitively coupling the electromagnetic radiation to the gas, which becomes a plasma and emits light.

Abstract: A method for assembling an electronic system with a plurality of layers. Recesses in formed in one or more dielectric layers and electronic components are positioned within the recesses. One or more layers containing the components are placed on a host substrate containing host circuits. Electrical interconnects are provided between and among the electronic components in the dielectric layers and the host circuits. The layers containing the components may also be provided by growing the electronic devices on a growth substrate. The growth substrate is then removed after the layer is attached to the host substrate.

Abstract: Described is a plasma electrode-less lamp. The device comprises an electromagnetic resonator and an electromagnetic radiation source conductively connected with the electromagnetic resonator. The device further comprises a pair of field probes, the field probes conductively connected with the electromagnetic resonator. A gas-fill vessel is formed from a closed, transparent body, forming a cavity. The gas-fill vessel is not contiguous with (detached from) the electromagnetic resonator and is capacitively coupled with the field probes. The gas-fill vessel further contains a gas within the cavity, whereby the gas is induced to emit light when electromagnetic radiation from the electromagnetic radiation source resonates inside the electromagnetic resonator, the electromagnetic resonator capacitively coupling the electromagnetic radiation to the gas, which becomes a plasma and emits light.

Abstract: Microelectromechanical RF and microwave frequency power limiter and electrostatic protection devices for use in high-speed circuits are presented. The devices utilize an airbridge or a cantilever arm including a contact pad positioned operatively adjacent to an electrically conductive and substantially planar transmission line. When the power level in the transmission line exceeds a particular threshold, the airbridge or cantilever arm yields due to force between the contact pad and the transmission line, directing undesired power away from active devices. This characteristic can either serve as a method by which to limit the amount of power passing through the transmission line to a determined value or as a method by which to protect devices along the transmission line from damage due to large electrostatic bursts.

Abstract: A focal plane array for millimeter wave imaging comprising a three dimensional stack of antenna elements and radiometer microwave monolithic integrated circuits (MMICs) embedded in polymer dielectric layers built on top of a silicon substrate. Each radiometer MMIC and antenna element comprise a radiometer pixel. The silicon substrate contains integrated circuits to collect and process the signals from each radiometer pixel and generate a full-frame video signal. The array can be fabricated on a single silicon wafer or can be constructed from structures fabricated on multiple silicon wafers.

Abstract: A Double Heterojunction Bipolar Transistor (DHBT) is disclosed employing a collector of InP, an emitter of InP or other material such as InAlAs, and a base of either a selected InxGa1−xAsySb1−y compound, which preferably is lattice-matched to InP or may be somewhat compressively strained thereto, or of a superlattice which mimics the selected InGaAsSb compound. When an emitter having a conduction band non-aligned with that of the base is used, such as InAlAs, the base-emitter junction is preferably graded using either continuous or stepped changes in bulk material, or using a chirped superlattice. Doping of the junction may include one or more delta doping layer to improve the shift of conduction band discontinuities provided by a grading layer, or to permit a wider depletion region.

Abstract: Microelectromechanical RF and microwave frequency power limiter and electrostatic protection devices for use in high-speed circuits are presented. The devices utilize an airbridge or a cantilever arm including a contact pad positioned operatively adjacent to an electrically conductive and substantially planar transmission line. When the power level in the transmission line exceeds a particular threshold, the airbridge or cantilever arm yields due to force between the contact pad and the transmission line, directing undesired power away from active devices. This characteristic can either serve as a method by which to limit the amount of power passing through the transmission line to a determined value or as a method by which to protect devices along the transmission line from damage due to large electrostatic bursts.

Abstract: A method for assembling an electronic system with a plurality of layers. Recesses in formed in one or more dielectric layers and electronic components are positioned within the recesses. One or more layers containing the components are placed on a host substrate containing host circuits. Electrical interconnects are provided between and among the electronic components in the dielectric layers and the host circuits. The layers containing the components may also be provided by growing the electronic devices on a growth substrate. The growth substrate is then removed after the layer is attached to the host substrate.

Abstract: A focal plane array for millimeter wave imaging comprising a three dimensional stack of antenna elements and radiometer microwave monolithic integrated circuits (MMICs) embedded in polymer dielectric layers built on top of a silicon substrate. Each radiometer MMIC and antenna element comprise a radiometer pixel. The silicon substrate contains integrated circuits to collect and process the signals from each radiometer pixel and generate a full-frame video signal. The array can be fabricated on a single silicon wafer or can be constructed from structures fabricated on multiple silicon wafers.

Abstract: The present invention provides a flexible mechanical bridge over a microstrip on a substrate, which utilizes an electromagnetic field increase, as generated by temporary power surge to shunt harmful power away from a MMIC system. The invention includes a power limiter which includes an airbridge 11, preferably in the form of an electrically conductive strip with ground contacts 1 and 3 formed thereon. The ground contacts 1 and 2 are electrically connected, through via holes 5 and 7 respectively, to a metallization layer 15 formed on the bottom side of a substrate 9. The air bridge 11 is designed such that it traverses an electrically conductive microstrip 13 forming an air gap 16 between the air bridge 11 and the electrically conductive microstrip 13. When there is a power surge the air bridge 11, will flex to cause an electrical connection with the microstrip 13, thereby directing the unwanted signal through the ground contacts 1 and 3 and the via holes 5 and 7 to the metallization layer 15.

Abstract: A high electron mobility transistor (HEMT) includes a substrate comprising indium phosphide and an optional buffer layer immediately adjacent the substrate. A channel layer immediately is adjacent the buffer layer, with the channel layer comprising indium phosphide antimonide and characterized by a formula of InPxSb(1−x), wherein x is about 0.85. The channel layer has a thickness of about 120 Angstroms. A Schottky layer is immediately adjacent the channel layer and a contact layer is immediately adjacent the Schottky layer. The transistor is characterized by a breakdown field of about 400 kV/cm and a saturated velocity of about 8.2×106 cm/s.

Abstract: A highly uniform, planar and high speed JHEMT-HBT MMIC is fabricated using a single growth process. A multi-layer structure including a composite emitter-channel layer, a base-gate layer and a collector layer is grown on a substrate. The composite emitter-channel layer includes a sub-emitter/channel layer that reduces the access resistance to the HBT's emitter and the JHEMT's channel, thereby improving the HBT's high frequency performance and increasing the JHEMT's current gain. The multi-layer structure is then patterned and metallized to form an HBT collector contact, planar HBT base and JHEMT gate contacts, and planar HBT emitter and JHEMT source and drain contacts.