Abstract: A highly uniform, planar and high speed JHEMT-HBT MMIC is fabricated using a single growth process. A multi-layer structure including a composite emitter-channel layer, a base-gate layer and a collector layer is grown on a substrate. The composite emitter-channel layer includes a sub-emitter/channel layer that reduces the access resistance to the HBT's emitter and the JHEMT's channel, thereby improving the HBT's high frequency performance and increasing the JHEMT's current gain. The multi-layer structure is then patterned and metallized to form an HBT collector contact, planar HBT base and JHEMT gate contacts, and planar HBT emitter and JHEMT source and drain contacts.

Abstract: An apparatus and method of processing a planar HEMT or FET semiconductor device is disclosed. An ohmic metalization is patterned on a semiconductor surface then lifted-off. A plurality of process control monitors are isolated, preferably using a wet etch process. The process control monitors preferably include transmission line patterns (TLMs) and etch field effect transistors The TLMs measure the contact resistance during the ohmic alloy process, and the etch field effect transistors monitor the drain current during the gate-recess step. The ohmic metalizations are then alloyed, and a gate is written using an electron beam. The semiconductor device is isolated, followed by application of an overlay which connects all resulting planar device connecting pads.

Abstract: A system for redistributing a television signal to a multiplicity of receiver units within a multiple dwelling unit (MDU) includes a main receiving antenna which receives a broadband television signal and a translation device that translates the broadband television signal into a different carrier frequency band. One or more broadcasting antennas, located at advantageous sites within the MDU, transmit the translated television signal along one or more walls of the MDU to be received by antennas associated with one or more individual receiver units. Each receiver unit demodulates the received television signal and provides a user-specified channel to a television set for display.

Abstract: A microwave/millimeter wave circuit structure supports discrete circuit elements by flip-chip mounting to an interconnection network on a low cost non-ceramic and non-semiconductor dielectric substrate, preferably Duroid. The necessary precise alignment of the circuit elements with contact pads on the substrate network required for the high operating frequencies is facilitated by oxidizing the interconnection network, but providing the contact pads from a non-oxidizable material to establish a preferential solder bump wetting for the pads. Alternately, the contact bumps on the flip-chips can be precisely positioned through corresponding openings in a passivation layer over the interconnection network. For thin circuit substrates that are too soft for successful flip-chip mounting, stiffening substrates are laminated to the circuit substrates.

Abstract: An epitaxial structure and method of manufacture for a field-effect transistor capable of high-speed low-noise microwave, submillimeterwave and millimeterwave applications. Preferably, the epitaxial structure includes a donor layer and/or buffer layer made from a semiconductor material having the formula AlP.sub.0.39+y Sb.sub.0.61-y.

Abstract: An epitaxial structure and method of manufacture for a field-effect transistor capable of low-noise and power applications. Preferably, the epitaxial structure includes an N-type barrier layer comprising a wide-gap semiconductor material having the formula Al.sub.1-y Ga.sub.y P.sub.0.71+z Sb.sub.0.29-z.

Abstract: A metal system that can be adjusted to obtain higher alloying temperatures in AlInAs/GaInAs heterostuctures is disclosed. Increasing the thickness of a Ag layer in the metal system facilitates higher alloying temperatures and, consequently, improved ohmic contact reliability. The system is particularly directed to use in Al.sub.x In.sub.1-x As/Ga.sub.0.47 In.sub.0.53 As with 0.48<x<1 power HFETs.

Abstract: A microwave/millimeter wave circuit structure supports discrete circuit elements by flip-chip mounting to an interconnection network on a low cost non-ceramic and non-semiconductor dielectric substrate, preferably Duroid. The necessary precise alignment of the circuit elements with contact pads on the substrate network required for the high operating frequencies is facilitated by oxidizing the interconnection network, but providing the contact pads from a non-oxidizable material to establish a preferential solder bump wetting for the pads. Alternately, the contact bumps on the flip-chips can be precisely positioned through corresponding openings in a passivation layer over the interconnection network. For thin circuit substrates that are too soft for successful flip-chip mounting, stiffening substrates are laminated to the circuit substrates.

Abstract: A wide-bandwidth variable attenuator/modulator incorporating a region of material comprising a combination of a ferromagnetic/nonmagnetic material which exhibits a Giant Magnetoresistance (GMR) effect.

Abstract: An epitaxial structure and method of manufacture for a single heterojunction bipolar transistor capable of being utilized in high-speed and high-power applications. Preferably, the epitaxial structure comprises an N-type collector made from InP, a P-type base made from InP, and an N-type emitter made from a semiconductor material of approximately 39 mole percent AlP and approximately 61 mole percent Sb.

Abstract: An epitaxial structure and method of manufacture for a single heterojunction bipolar transistor capable of being utilized in high-speed and high-power applications. Preferably, the epitaxial structure comprises an N-type collector made from InP, a P-type base made from InP, and an N-type emitter made from a semiconductor material of approximately 39 mole percent AlP and approximately 61 mole percent Sb.

Abstract: High breakdown voltages for AlInAs layers in InP-based devices, such as a gate layer in an InP HEMT or a collector layer in a heterojunction bipolar transistor, are achieved by growing the AlInAs layer by MBE at a substrate temperature about 70.degree.-125.degree. C. below the temperature at which a 2.times.4 reflective high energy diffraction pattern is observed. This corresponds to a growth temperature range of about 415.degree.-470.degree. C. for a 540.degree. 2.times.4 reconstruction temperature. Preferred growth temperatures within these ranges are 80.degree. C. below the 2.times.4 reconstruction temperature, or about 460.degree. C. Higher breakdown voltages are obtained than when the AlInAs layer is grown at either higher or lower temperatures.

Abstract: An epitaxial structure and method of manufacture for a field-effect transistor capable of high-speed low-noise microwave, submillimeterwave and millimeterwave applications. Preferably, the epitaxial structure includes a donor layer and/or buffer layer made from a semiconductor material having the formula AlP.sub.0.39+y Sb.sub.0.61-y.

Abstract: A monolithic microwave integrated circuit is formed by positioning a distributed, transmission-line network over a microwave-device structure. The ground plane of the transmission-line network adjoins an interconnect system of the microwave-device structure and signal lines of the transmission-line network are adapted to communicate with the microwave-device structure through orifices of the ground plane. The invention facilitates the use of low-cost silicon-based transistors in monolithic microwave integrated circuits.