Abstract: Methods and apparatus for chemical delivery are provided herein. In some embodiments, a first reservoir holds a first volume of fluid, receives a carrier gas, and outputs the carrier gas together with vapor derived from the first volume of fluid. A second reservoir holds a second volume of fluid and is capable of delivering a part of the second volume of fluid to the first reservoir. A self-regulating tube extends from the first reservoir to a region above the second volume of fluid in the second reservoir.

Abstract: A long-distance radio frequency anti-metal identification tag is provided. When a bottom surface of an insulating spacer plate is attached to the surface of a metal object and an electronic tag reading device is used to read a radio frequency identification chip on a second antenna. A resonant cavity is formed between a slot of a first antenna and the surface of the metal object through the isolation of the insulating spacer plate, such that the second antenna located at the position of the resonant cavity resonates with an electromagnetic wave signal reflected on the surface of the metal object by the first antenna. The electromagnetic wave signal is transmitted to the radio frequency identification chip, or the feedback signal of the radio frequency identification chip is transmitted out. The overall UHF electronic tag is resistant to a metal interference and has the performance of long-distance reading.

Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

Abstract: A long-distance radio frequency electronic identification tire structure is provided. When the production of the tire is completed and an electronic tag reading device is used for identification, an RFID chip of an ultra high frequency electronic tag of a main tire body receives and sends an electromagnetic wave signal generated by a far-field copper film antenna and the electronic tag reading device. The frequency band and the bandwidth of the electromagnetic wave signal are adjusted by a frequency band/bandwidth adjustment portion, and first and second field effect adjustment grooves of first and second field effect adjustment portions are configured to adjust the field effect when a tire bead bundle and a steel belt layer reflect the electromagnetic wave signal, so that the electronic tag reading device can read the identification code of the ultra high frequency electronic tag at a wide angle and a long distance.

Abstract: A non-volatile memory having a double metal layout is provided that includes a first fuse fabricated on a first conductive layer of the integrated circuit, a second fuse fabricated on a second conductive layer of the integrated circuit, and a transistor fabricated on front-end-of-the-line (FEOL) structure of the integrated circuit. A first memory cell of the non-volatile memory is provided by a first memory circuit comprising the first fuse and the transistor, and a second memory cell of the non-volatile memory is provided by a second memory circuit comprising the second fuse and the transistor.

Abstract: A rail structure for optical fiber cassette is adapted to be assembled on a board member of a fiber box. The first engaging structure and the second engaging structure at two ends of the rail body are movably engaged with the first buckling structure and the second buckling structure. Hence, the user may detach one of the rail structures from the board member, so that the distance between the rest two of the rail structures goes wider, and the user can assemble another optical fiber cassette between the two rail structures, and the type and the size of the optical fiber cassette may be different from the detached one. Hence, the rail structure has wide applicability to allow the user to change the optical fiber cassette with different types and specifications conveniently and quickly.

Abstract: Lid assemblies for processing chamber and processing chambers including the lid assemblies are described. The lid assemblies include a high temperature lid module and a housing. The high temperature lid module being positioned adjacent a process liner of a processing chamber. The flexible housing positioned around the high temperature lid module and joined to the high temperature lid module with an elastomeric ring.

Abstract: Methods for depositing silicon include cycling dosing between 1 and 100 cycles of one or more first chlorosilane precursors on a III-V surface at a temperature between 300° C. and 500° C. to form a first layer. Methods may include desorbing chlorine from the first layer by treating the first layer with atomic hydrogen to form a second layer. Methods may include forming a silicon multilayer on the second layer by cycling dosing between 1 and 100 cycles of one or more second chlorosilane precursors and atomic hydrogen at a temperature between 300° C. and 500° C. A layered composition includes a first layer selected from the group consisting of InxGa1-xAs, InxGa1-xSb, InxGa1-xN, SiGe, and Ge, wherein X is between 0.1 and 0.99, and a second layer, wherein the second layer comprises Si—H and Si—OH.

Abstract: A bit cell includes a program device comprising a first source/drain region and a second source/drain region separated by a first channel. The first source/drain region, the second source/drain region, and the first channel are positioned along a first direction. The bit cell also includes an electrical fuse (eFuse) having a conduction path along the first direction. A conductive element is electrically connected with the first source/drain region and one end of the eFuse.

Abstract: A gas feedthrough assembly and processing apparatus using the same are disclosed herein. In some embodiments, the gas feedthrough assembly, includes a dielectric body; at least one channel extending through the dielectric body; and a dielectric tube disposed within the at least one channel, wherein an inner diameter of the at least one channel is greater than an outer diameter of the dielectric tube such that a gap is formed between an outer wall of the dielectric tube and an inner wall of the at least one channel.

Abstract: Apparatus and methods for supplying a gas to a processing chamber are described. The apparatus comprises an inlet line and an outlet line, each with two valves, in fluid communication an ampoule. A bypass line connects the inlet valve and outlet valve closest to the ampoule. The apparatus and methods of use allow a precursor residue to be removed from the delivery lines of a processing chamber.

Abstract: Embodiments described herein provide a self-limiting and saturating Si—Ox bilayer process which does not require the use of a plasma or catalyst and that does not lead to undesirable substrate oxidation. Methods of the disclosure do not produce SiO2, but instead produce a saturated Si—Ox film with —OH termination to make substrate surfaces highly reactive towards metal ALD precursors to seed high nucleation and growth of gate oxide ALD materials.

Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.

Abstract: Films comprising Aluminum, carbon and a metal, wherein the aluminum is present in an amount greater than about 16% by elemental content and the film has less than about 50% carbon. Methods of forming the films comprise exposing a substrate to a metal halide precursor, purging the metal halide precursor from the processing chamber and then exposing the substrate to an alkyl aluminum precursor and an alane precursor, either sequentially or simultaneously. The alane precrursor comprises an amine-alane and a stabilizing amine selected from one or more of diemthylcyclohexylamine or dicyclomethylhexylamine.

Abstract: Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.

Abstract: Methods for processing a substrate are described herein. Methods can include positioning a substrate with an exposed surface comprising a silicon oxide layer in a processing chamber, biasing the substrate, treating the substrate to roughen a portion of the silicon oxide layer, heating the substrate to a first temperature, exposing the exposed surface of the substrate to ammonium fluoride to form one or more volatile products while maintaining the first temperature, and heating the substrate to a second temperature, which is higher than the first temperature, to sublimate the volatile products.

Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of processing a substrate includes: heating a substrate disposed within a processing volume of a substrate processing chamber to a temperature of up to about 400 degrees Celsius, wherein the substrate comprises a first surface, an opposing second surface, and an opening formed in the first surface and extending towards the opposing second surface, and wherein the second surface comprises a conductive material disposed in the second surface and aligned with the opening; and exposing the substrate to a process gas comprising about 80 to about 100 wt. % of an alcohol to reduce a contaminated surface of the conductive material.

Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.

Abstract: Methods for etching a substrate are provided herein. In some embodiments, a method for etching a substrate disposed within a processing volume of a process chamber includes: (a) exposing a first layer disposed atop the substrate to a first gas comprising tungsten chloride (WClx) for a first period of time and at a first pressure, wherein x is 5 or 6; (b) purging the processing volume of the first gas using an inert gas for a second period of time; (c) exposing the substrate to a hydrogen-containing gas for a third period of time to etch the first layer after purging the processing volume of the first gas; and (d) purging the processing volume of the hydrogen-containing gas using the inert gas for a fourth period of time.