Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C.

Abstract: Multi-point thermocouples and assemblies are disclosed for ceramic heating structures. The disclosed embodiments provide multi-point connections in distinct areas to provide good temperature-sensing contacts between metal thermocouples and ceramic bodies while also providing improved flexibility. As such, cracking of ceramic bodies for heating structures is avoided. For one embodiment, assemblies including a multi-point thermocouple and a ceramic body are used in bake plates for processing systems that process microelectronic workpieces. The metal thermocouple has a flat surface used for connections to the ceramic body. Preferably, the thermocouple is relatively thin and provides improved connection sites and flexibility.

Abstract: A vertical batch furnace assembly, comprising a core tube, an outer casing, a cooling chamber bounded and enclosed by the outer casing and the core tube, and at least one cooling gas supply emanating in the cooling chamber. The core tube has an elongated circumferential wall extending in a longitudinal direction, and is configured to accommodate wafers for processing in the vertical batch furnace. The outer casing extends around the core tube and comprises a heating element for applying a thermal treatment to wafers accommodated in the core tube. The at least one cooling gas supply comprises at least one cooling gas supply opening which is arranged such that the cooling gas enters the cooling chamber with a flow direction which is substantially tangent to the circumferential wall.

Abstract: A vertical batch furnace assembly, comprising a core tube, an outer casing, a cooling chamber bounded and enclosed by the outer casing and the core tube, and at least one cooling gas supply emanating in the cooling chamber. The core tube has an elongated circumferential wall extending in a longitudinal direction, and is configured to accommodate wafers for processing in the vertical batch furnace. The outer casing extends around the core tube and comprises a heating element for applying a thermal treatment to wafers accommodated in the core tube. The at least one cooling gas supply comprises at least one cooling gas supply opening which is arranged such that the cooling gas enters the cooling chamber with a flow direction which is substantially tangent to the circumferential wall.

Abstract: A radiation shield and an assembly and a reactor including the radiation shield are disclosed. The radiation shield can be used to control heat flux from a susceptor heater assembly and thereby enable better control of temperatures across a surface of a substrate placed on a surface of the susceptor heater assembly.

Abstract: A radiation shield and an assembly and a reactor including the radiation shield are disclosed. The radiation shield can be used to control heat flux from a susceptor heater assembly and thereby enable better control of temperatures across a surface of a substrate placed on a surface of the susceptor heater assembly.

Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C.

Abstract: An exemplary apparatus includes a metal furnace tube having an open first end and an opposite second end. The metal furnace tube includes an inner chamber, a fluid inlet to intake a fluid into the inner chamber, and a fluid outlet to exhaust the fluid from the inner chamber, the inner chamber to support a plurality of substrates within the metal furnace tube. The apparatus includes a first base plate or flange back plate coupling the fluid inlet to the inner chamber; a second base plate or flange back plate coupling the fluid outlet to the inner chamber; and a furnace includes a heater to heat the metal furnace tube, the metal furnace tube being mounted within the furnace and the heater being disposed outside the metal furnace tube.

Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C.

Abstract: Internally cooled multi-hole injectors to deliver process chemicals are provided. An internal channel in an injector for the delivery system delivers process chemicals, such as a gas precursor, to a reaction space or substrate within a process chamber through multiple holes formed by outlets. A cooling delivery path and a cooling return path for cooling chemicals are positioned adjacent the supply channel to cool the process chemicals internally within the injector. The cooling process can be controlled to achieve a target cooling level for the process chemicals within the channel. In operation, undesired deposits are reduced thereby extending the time between product maintenance cycles. Further, the delivery and return flow of the cooling chemicals helps to stimulate a more evenly distributed temperature for the supply channel. Still further, the disclosed embodiments can be used in high-temperature environments, such as above about 400 degrees Celsius.

Abstract: A stage device includes: a stage having a pin hole provided therein and a placement surface on which a substrate is placed; and at least one lift pin configured to move up and down through the pin hole; and a lifter configured to raise and lower the at least one lift pin, wherein the stage includes a first heating part provided therein and configured to heat the stage, and the at least one lift pin includes a second heating part provided therein or therearound and configured to heat the at least one lift pin.

Abstract: A vertical batch furnace assembly, comprising a core tube, an outer casing, a cooling chamber bounded and enclosed by the outer casing and the core tube, and at least one cooling gas supply emanating in the cooling chamber. The core tube has an elongated circumferential wall extending in a longitudinal direction, and is configured to accommodate wafers for processing in the vertical batch furnace. The outer casing extends around the core tube and comprises a heating element for applying a thermal treatment to wafers accommodated in the core tube. The at least one cooling gas supply comprises at least one cooling gas supply opening which is arranged such that the cooling gas enters the cooling chamber with a flow direction which is substantially tangent to the circumferential wall.

Abstract: Multi-point thermocouples and assemblies are disclosed for ceramic heating structures. The disclosed embodiments provide multi-point connections in distinct areas to provide good temperature-sensing contacts between metal thermocouples and ceramic bodies while also providing improved flexibility. As such, cracking of ceramic bodies for heating structures is avoided. For one embodiment, assemblies including a multi-point thermocouple and a ceramic body are used in bake plates for processing systems that process microelectronic workpieces. The metal thermocouple has a flat surface used for connections to the ceramic body. Preferably, the thermocouple is relatively thin and provides improved connection sites and flexibility.

Abstract: Embodiments of substrate processing systems and methods are provided for reducing the number of external connectors provided on a substrate processing system for receiving liquids and gases from external liquid and gas sources. In one embodiment, a substrate processing system includes a plurality of processing units for processing a substrate; a plurality of external connectors for receiving liquids and/or gases from a plurality of sources stored outside of the substrate processing system; and a plurality of internal distribution lines for routing the liquids and/or gases from the external connectors to the processing units. The disclosed substrate processing system reduces the number of external connectors provided on the system by: (a) including only one external connector for each liquid and gas source, and (b) providing a plurality of internal distribution lines within the substrate processing system for routing liquids and gases from the external connectors to the processing units.

Abstract: Methods and system are disclosed for multipolar electrostatic chucks (ESCs) that provide improved clamping of microelectronic workpieces within processing equipment. The disclosed multipolar ESCs effectively clamp microelectronic workpieces including those with significant bows. Multipolar ESC embodiments include a dielectric body and multiple sets of electrodes formed within the dielectric body. Further, multiple electric fields are generated between the multiple sets of electrodes to facilitate the processing of the microelectronic workpiece. For example, a voltage generator can be used to apply voltages to the multiple sets of electrodes to generate the multiple electric fields. These electric fields can migrate charge to edges of a microelectronic workpiece and can be used to facilitate clamping of the microelectronic workpiece and/or to reduce bow in a microelectronic workpiece. Sensors can also be used to help control and improve the operation of the multipolar ESCs.

Abstract: Bake modules and related heaters for the processing of microelectronic workpieces, such as semiconductor substrates, are disclosed that include a plurality of resistance temperature detectors (RTDs) embedded into the heater to sense temperatures in different zones of the heater. Related methods are also disclosed.

Abstract: Embodiments are described for internally cooled multi-hole injectors to deliver process chemicals. An internal channel in an injector for the delivery system delivers process chemicals, such as a gas precursor, to a reaction space or substrate within a process chamber through multiple holes formed by outlets. A cooling delivery path and a cooling return path for cooling chemicals are positioned adjacent the supply channel to cool the process chemicals internally within the injector. The cooling process can be controlled to achieve a target cooling level for the process chemicals within the channel. In operation, undesired deposits are reduced thereby extending the time between product maintenance cycles. Further, the delivery and return flow of the cooling chemicals helps to stimulate a more evenly distributed temperature for the supply channel. Still further, the disclosed embodiments can be used in high-temperature environments, such as above about 400 degrees Celsius.

Abstract: A susceptor includes a plate part, a first heater for heating a first portion of the plate part, a second heater for heating a second portion of the plate part, and a heat insulating portion for thermally insulating the first portion and the second portion from each other on an upper surface side of the plate part.

Abstract: A radiation shield and an assembly and a reactor including the radiation shield are disclosed. The radiation shield can be used to control heat flux from a susceptor heater assembly and thereby enable better control of temperatures across a surface of a substrate placed on a surface of the susceptor heater assembly.

Abstract: A radiation shield and an assembly and a reactor including the radiation shield are disclosed. The radiation shield can be used to control heat flux from a susceptor heater assembly and thereby enable better control of temperatures across a surface of a substrate placed on a surface of the susceptor heater assembly.