Abstract: A radiation shield and an assembly and a reactor including the radiation shield are disclosed. The radiation shield can be used to control heat flux from a susceptor heater assembly and thereby enable better control of temperatures across a surface of a substrate placed on a surface of the susceptor heater assembly.

Abstract: A radiation shield and an assembly and a reactor including the radiation shield are disclosed. The radiation shield can be used to control heat flux from a susceptor heater assembly and thereby enable better control of temperatures across a surface of a substrate placed on a surface of the susceptor heater assembly.

Abstract: A showerhead assembly for distributing a gas within a reaction chamber is disclosed. The showerhead assembly may comprise: a chamber formed within the showerhead assembly and a gas distribution assembly adjacent to the chamber, wherein the gas distribution assembly comprises: a first gas distribution plate comprising a top surface and a bottom surface; and a second gas distribution plate comprising a top surface and a bottom surface, the second gas distribution plate being disposed over the top surface of the first gas distribution plate. The gas distribution assembly may further comprise: one or more heating structures disposed between the first gas distribution plate and the second gas distribution plate; and a plurality of apertures extending from the bottom surface of the first distribution plate to the top surface of the second gas distribution plate. Methods for controlling the temperature uniformity of a showerhead assembly utilized for distribution gas with a reaction chamber are also disclosed.

Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C.

Abstract: A susceptor includes a plate part, a first heater for heating a first portion of the plate part, a second heater for heating a second portion of the plate part, and a heat insulating portion for thermally insulating the first portion and the second portion from each other on an upper surface side of the plate part.