Patents by Inventor Michael C. Johnson
Michael C. Johnson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230071311Abstract: Examples of the present disclosure describe implementing bitmap-based data replication when a primary form of data replication between a source device and a target device cannot be used. According to one example, a temporal identifier may be received from the target device. If the source device determines that the primary replication method is unable to be used to replicate data associated with the temporal identifier, a secondary replication method may be initiated. The secondary replication method may utilize a recovery bitmap identifying data blocks that have changed on the source device since a previous event.Type: ApplicationFiled: November 11, 2022Publication date: March 9, 2023Applicant: Microsoft Technology Licensing, LLCInventors: Roopesh BATTEPATI, Michael C. JOHNSON, Manoj KADAM, Raymond WANG, Ganesh PRASAD, Ziquan ZHU
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Patent number: 11594648Abstract: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a solar cell can include a substrate having a light-receiving surface and a back surface. A first doped region of a first conductivity type, wherein the first doped region is disposed in a first portion of the back surface. A first thin dielectric layer disposed over the back surface of the substrate, where a portion of the first thin dielectric layer is disposed over the first doped region of the first conductivity type. A first semiconductor layer disposed over the first thin dielectric layer. A second doped region of a second conductivity type in the first semiconductor layer, where the second doped region is disposed over a second portion of the back surface. A first conductive contact disposed over the first doped region and a second conductive contact disposed over the second doped region.Type: GrantFiled: April 20, 2020Date of Patent: February 28, 2023Assignee: SunPower CorporationInventors: Seung Bum Rim, Michael C. Johnson
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Patent number: 11526399Abstract: Examples of the present disclosure describe implementing bitmap-based data replication when a primary form of data replication between a source device and a target device cannot be used. According to one example, a temporal identifier may be received from the target device. If the source device determines that the primary replication method is unable to be used to replicate data associated with the temporal identifier, a secondary replication method may be initiated. The secondary replication method may utilize a recovery bitmap identifying data blocks that have changed on the source device since a previous event.Type: GrantFiled: August 24, 2021Date of Patent: December 13, 2022Assignee: Microsoft Technology Licensing, LLCInventors: Roopesh Battepati, Michael C. Johnson, Manoj Kadam, Raymond Wang, Ganesh Prasad, Ziquan Zhu
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Publication number: 20220293801Abstract: Methods of fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer below the passivating dielectric layer. The method also includes exposing the ARC layer to ultra-violet (UV) radiation. The method also includes, subsequent to exposing the ARC layer to ultra-violet (UV) radiation, thermally annealing the ARC layer.Type: ApplicationFiled: May 31, 2022Publication date: September 15, 2022Inventors: Yu-Chen Shen, Perine Jaffrennou, Gilles Olav Tanguy Sylvain Poulain, Michael C. Johnson, Seung Bum Rim
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Patent number: 11374145Abstract: Methods of fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer below the passivating dielectric layer. The method also includes exposing the ARC layer to ultra-violet (UV) radiation. The method also includes, subsequent to exposing the ARC layer to ultra-violet (UV) radiation, thermally annealing the ARC layer.Type: GrantFiled: December 5, 2019Date of Patent: June 28, 2022Assignees: SunPower Corporation, Total Marketing ServicesInventors: Yu-Chen Shen, Périne Jaffrennou, Gilles Olav Tanguy Sylvain Poulain, Michael C. Johnson, Seung Bum Rim
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Publication number: 20210390019Abstract: Examples of the present disclosure describe implementing bitmap-based data replication when a primary form of data replication between a source device and a target device cannot be used. According to one example, a temporal identifier may be received from the target device. If the source device determines that the primary replication method is unable to be used to replicate data associated with the temporal identifier, a secondary replication method may be initiated. The secondary replication method may utilize a recovery bitmap identifying data blocks that have changed on the source device since a previous event.Type: ApplicationFiled: August 24, 2021Publication date: December 16, 2021Applicant: Microsoft Technology Licensing, LLCInventors: Roopesh Battepati, Michael C. Johnson, Manoj Kadam, Raymond Wang, Ganesh Prasad, Ziquan Zhu
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Patent number: 11144397Abstract: Examples of the present disclosure describe implementing bitmap-based data replication when a primary form of data replication between a source device and a target device cannot be used. According to one example, a temporal identifier may be received from the target device. If the source device determines that the primary replication method is unable to be used to replicate data associated with the temporal identifier, a secondary replication method may be initiated. The secondary replication method may utilize a recovery bitmap identifying data blocks that have changed on the source device since a previous event.Type: GrantFiled: September 12, 2014Date of Patent: October 12, 2021Assignee: Microsoft Technology Licensing, LLCInventors: Roopesh Battepati, Michael C. Johnson, Manoj Kadam, Raymond Wang, Ganesh Prasad, Ziquan Zhu
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Publication number: 20210249551Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.Type: ApplicationFiled: February 23, 2021Publication date: August 12, 2021Inventors: Richard M. Swanson, Marius M. Bunea, Michael C. Johnson, David D. Smith, Yu-Chen Shen, Peter J. Cousins, Tim Dennis
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Patent number: 10957809Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.Type: GrantFiled: November 22, 2019Date of Patent: March 23, 2021Assignee: SunPower CorporationInventors: Richard M. Swanson, Marius M. Bunea, Michael C. Johnson, David D. Smith, Yu-Chen Shen, Peter J. Cousins, Tim Dennis
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Patent number: 10840395Abstract: Methods of fabricating solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a thin dielectric layer on a surface of a substrate by radical oxidation or plasma oxidation of the surface of the substrate. The method also involves forming a silicon layer over the thin dielectric layer. The method also involves forming a plurality of emitter regions from the silicon layer.Type: GrantFiled: June 7, 2018Date of Patent: November 17, 2020Assignee: SunPower CorporationInventors: Michael C. Johnson, Taiqing Qiu, David D. Smith, Peter John Cousins, Staffan Westerberg
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Patent number: 10804843Abstract: Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.Type: GrantFiled: March 11, 2019Date of Patent: October 13, 2020Assignee: SunPower CorporationInventors: Xiuwen Tu, David Aitan Soltz, Michael C. Johnson, Seung Bum Rim, Taiqing Qiu, Yu-Chen Shen, Kieran Mark Tracy
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Publication number: 20200251601Abstract: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a solar cell can include a substrate having a light-receiving surface and a back surface. A first doped region of a first conductivity type, wherein the first doped region is disposed in a first portion of the back surface. A first thin dielectric layer disposed over the back surface of the substrate, where a portion of the first thin dielectric layer is disposed over the first doped region of the first conductivity type. A first semiconductor layer disposed over the first thin dielectric layer. A second doped region of a second conductivity type in the first semiconductor layer, where the second doped region is disposed over a second portion of the back surface. A first conductive contact disposed over the first doped region and a second conductive contact disposed over the second doped region.Type: ApplicationFiled: April 20, 2020Publication date: August 6, 2020Inventors: Seung Bum Rim, Michael C. Johnson
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Patent number: 10629758Abstract: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a solar cell can include a substrate having a light-receiving surface and a back surface. A first doped region of a first conductivity type, wherein the first doped region is disposed in a first portion of the back surface. A first thin dielectric layer disposed over the back surface of the substrate, where a portion of the first thin dielectric layer is disposed over the first doped region of the first conductivity type. A first semiconductor layer disposed over the first thin dielectric layer. A second doped region of a second conductivity type in the first semiconductor layer, where the second doped region is disposed over a second portion of the back surface. A first conductive contact disposed over the first doped region and a second conductive contact disposed over the second doped region.Type: GrantFiled: September 30, 2016Date of Patent: April 21, 2020Assignee: SunPower CorporationInventors: Seung Bum Rim, Michael C. Johnson
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Publication number: 20200111924Abstract: Methods of fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer below the passivating dielectric layer. The method also includes exposing the ARC layer to ultra-violet (UV) radiation. The method also includes, subsequent to exposing the ARC layer to ultra-violet (UV) radiation, thermally annealing the ARC layer.Type: ApplicationFiled: December 5, 2019Publication date: April 9, 2020Inventors: Yu-Chen Shen, Périne Jaffrennou, Gilles Olav Tanguy Sylvain Poulain, Michael C. Johnson, Seung Bum Rim
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Publication number: 20200091366Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.Type: ApplicationFiled: November 22, 2019Publication date: March 19, 2020Inventors: Richard M. Swanson, Marius M. Bunea, Michael C. Johnson, David D. Smith, Yu-Chen Shen, Peter J. Cousins, Tim Dennis
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Patent number: 10490685Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.Type: GrantFiled: December 21, 2018Date of Patent: November 26, 2019Assignee: SunPower CorporationInventors: Richard M. Swanson, Marius M. Bunea, Michael C. Johnson, David D. Smith, Yu-Chen Shen, Peter J. Cousins, Tim Dennis
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Publication number: 20190273467Abstract: Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.Type: ApplicationFiled: March 11, 2019Publication date: September 5, 2019Inventors: Xiuwen Tu, David Aitan Soltz, Michael C. Johnson, Seung Bum Rim, Taiqing Qiu, Yu-Chen Shen, Kieran Mark Tracy
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Publication number: 20190131477Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.Type: ApplicationFiled: December 21, 2018Publication date: May 2, 2019Inventors: Richard M. Swanson, Marius M. Bunea, Michael C. Johnson, David D. Smith, Yu-Chen Shen, Peter J. Cousins, Tim Dennis
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Patent number: 10230329Abstract: Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.Type: GrantFiled: February 6, 2017Date of Patent: March 12, 2019Assignee: SunPower CorporationInventors: Xiuwen Tu, David Aitan Soltz, Michael C. Johnson, Seung Bum Rim, Taiqing Qiu, Yu-Chen Shen, Kieran Mark Tracy
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Publication number: 20190051769Abstract: Methods of passivating light-receiving surfaces of solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a silicon substrate having a light-receiving surface. An intrinsic silicon layer is disposed above the light-receiving surface of the silicon substrate. An N-type silicon layer is disposed on the intrinsic silicon layer. A non-conductive anti-reflective coating (ARC) layer is disposed on the N-type silicon layer. In another example, a solar cell includes a silicon substrate having a light-receiving surface. A tunneling dielectric layer is disposed on the light-receiving surface of the silicon substrate. An N-type silicon layer is disposed on the tunneling dielectric layer. A non-conductive anti-reflective coating (ARC) layer is disposed on the N-type silicon layer.Type: ApplicationFiled: October 17, 2018Publication date: February 14, 2019Inventors: Seung Bum Rim, Genevieve A. Solomon, Michael C. Johnson, Jérôme Damon-Lacoste, Antoine Marie Olivier Salomon