Abstract: A method for fabricating a semiconductor device includes forming a structure with a height difference on a substrate and forming a dielectric layer structure on the structure using an atomic layer deposition (ALD) method. Forming the dielectric layer structure includes forming a first dielectric layer including silicon nitride on the structure with the height difference. Forming the first dielectric layer includes feeding a first gas including pentachlorodisilane (PCDS) or diisopropylamine pentachlorodisilane (DPDC) as a silicon precursor, and a second gas including nitrogen components into a chamber including the substrate such that the first dielectric layer is formed in situ on the structure having the height difference.

Abstract: A method for fabricating a semiconductor device includes forming a structure with a height difference on a substrate and forming a dielectric layer structure on the structure using an atomic layer deposition (ALD) method. Forming the dielectric layer structure includes forming a first dielectric layer including silicon nitride on the structure with the height difference. Forming the first dielectric layer includes feeding a first gas including pentachlorodisilane (PCDS) or diisopropylamine pentachlorodisilane (DPDC) as a silicon precursor, and a second gas including nitrogen components into a chamber including the substrate such that the first dielectric layer is formed in situ on the structure having the height difference.

Abstract: The inventive concepts provide silicon precursors, methods of forming a layer using the same, and methods of fabricating a semiconductor device using the same. The silicon precursor includes a silane group including two or more silicon atoms. The silicon precursor has a high and uniform adsorption property on surfaces of layers (e.g., a silicon layer, an oxide layer, and a nitride layer) that are mainly used when semiconductor devices are fabricated.

Abstract: The inventive concepts provide silicon precursors, methods of forming a layer using the same, and methods of fabricating a semiconductor device using the same. The silicon precursor includes a silane group including two or more silicon atoms. The silicon precursor has a high and uniform adsorption property on surfaces of layers (e.g., a silicon layer, an oxide layer, and a nitride layer) that are mainly used when semiconductor devices are fabricated.

Abstract: The inventive concepts provide silicon precursors, methods of forming a layer using the same, and methods of fabricating a semiconductor device using the same. The silicon precursor includes a silane group including two or more silicon atoms. The silicon precursor has a high and uniform adsorption property on surfaces of layers (e.g., a silicon layer, an oxide layer, and a nitride layer) that are mainly used when semiconductor devices are fabricated.

Abstract: A method of making amino-mercapto functional organopolysiloxanes is disclosed by reacting (A) a dialkoxydialkylsilane, (B) an amino functional alkoxy silane, and (C) a mercapto functional alkoxy silane, via a condensation reaction. The amino-mercapto functional organopolysiloxanes products are useful in textile and fabric treatments.

Abstract: The invention pertains to a process for dehydrating wet acetic acid. One embodiment of the invention comprises contacting wet acetic acid with acetyl chloride. Another embodiment of the invention comprises contacting wet acetic acid; acetic anhydride; and a catalytic effective amount of hydrogen chloride, acetyl chloride, or a chlorosilane.

Abstract: The invention relates to a process for producing siloxanes comprising reacting at least two siloxanes in the presence of an ion exchange resin catalyst comprising from 6 to 19 weight %, based upon the dry weight of the ion exchange resin catalyst, water, at a temperature from ambient to 110° C. The invention also relates to a process for reusing the ion exchange resin catalyst after the reacting of the at least two siloxanes in the presence of the ion exchange resin catalysts comprising adding water to the ion exchange resin catalyst to readjust the water content to from 6 to 19 weight % water, based on the dry weight of the catalyst, and then reacting at least two siloxanes in the presence of the readjusted water content ion exchange resin catalyst.

Abstract: A method of making amino-mercapto functional organopolysiloxanes is disclosed by reacting (A) a dialkoxydialkylsilane, (B) an amino functional alkoxy silane, and (C) a mercapto functional alkoxy silane, via a condensation reaction. The amino-mercapto functional organopolysiloxanes products are useful in textile and fabric treatments.

Abstract: The invention relates to a process for producing siloxanes comprising reacting at least two siloxanes in the presence of an ion exchange resin catalyst comprising from 6 to 19 weight %, based upon the dry weight of the ion exchange resin catalyst, water, at a temperature from ambient to 110° C. The invention also relates to a process for reusing the ion exchange resin catalyst after the reacting of the at least two siloxanes in the presence of the ion exchange resin catalysts comprising adding water to the ion exchange resin catalyst to readjust the water content to from 6 to 19 weight % water, based on the dry weight of the catalyst, and then reacting at least two siloxanes in the presence of the readjusted water content ion exchange resin catalyst.

Abstract: The invention pertains to a process for dehydrating wet acetic acid. One embodiment of the invention comprises contacting wet acetic acid with acetyl chloride. Another embodiment of the invention comprises contacting wet acetic acid; acetic anhydride; and a catalytic effective amount of hydrogen chloride, acetyl chloride, or a chlorosilane.