Abstract: Sputter devices comprise a vacuum supply, a gas supply, a substrate holding device, and sputter sources. Each sputter source is held by an individual source support, each of which has an individual reference point allocated on a sputter surface facing the deposition area, and each of which has a source distance to a source reference surface from the individual reference point. The sputter sources are spaced apart from each other, are arranged as a two-dimensional array opposite the deposition area, and extend along the source reference surface. The source reference surface is parallel to the substrate reference surface. At least one of the sputter sources has a source distance deviating from zero.

Abstract: Sputter devices comprise a vacuum supply, a gas supply, a substrate holding device, and sputter sources. Each sputter source is held by an individual source support, each of which has an individual reference point allocated on a sputter surface facing the deposition area, and each of which has a source distance to a source reference surface from the individual reference point. The sputter sources are spaced apart from each other, are arranged as a two-dimensional array opposite the deposition area, and extend along the source reference surface. The source reference surface is parallel to the substrate reference surface. At least one of the sputter sources has a source distance deviating from zero.

Abstract: A method for cleaning at least one component arranged in the inner region of a plasma process chamber using a cleaning gas including fluorine gas, where the process chamber has at least one electrode and counter-electrode for generating a plasma for plasma treatment, where the inner region is exposed to gaseous fluorine compounds with a partial pressure of greater than 5 mbar, where the process chamber has at least one electrode and counter-electrode for generating a plasma, and the fluorine gas is thermally activated by means of a temperature-regulating means, where the component to be cleaned has a temperature of<350° C.

Abstract: Method and device for the plasma treatment of a substrate in a plasma device, wherein—the substrate (110) is arranged between an electrode (112) and a counter-electrode (108) having a distance d between a surface area of the substrate to be treated and the electrode, —a capacitively coupled plasma discharge is excited, forming a DC self-bias between the electrode (112) and the counter-electrode (108), —in an area of the plasma discharge between the surface area to be treated and the electrode having a quasineutral plasma bulk (114), a quantity of at least one activatable gas species, to which a surface area of the substrate to be treated is subjected, is present —it is provided that a plasma discharge is excited, —wherein the distance d has a value comparable to s=se+sg, where se denotes a thickness of a plasma boundary layer (119) in front of the electrode, and sg denotes a thickness of a plasma boundary layer (118) in front of the substrate surface to be treated or —wherein the quasineutral plasma bulk (114

Abstract: A force microscope for the detection of forces in the sub-micronewton range has a measurement head which is used to carry out a relative movement with respect to a sample holder and to which a carrier molecule is attached on which probe molecules are placed.

Abstract: A reactor for the treatment of flat substrates includes a vacuum chamber with a process space arranged therein. A first electrode and a counterelectrode generate a plasma for the treatment of a surface to be treated and form two opposite walls of the process space. The reactor further includes means for introducing and means for removing gaseous material into and out from the process space. At least one substrate is accommodated by a front side of the counterelectrode. The vacuum chamber includes an opening having a closure device. The reactor includes a device for varying the relative distance between the first electrode and the counterelectrode and a device assigned to the counterelectrode for accommodating substrates. At least one substrate is arranged at an angle alpha in a range of between 0° and 90° relative to a perpendicular direction at least during the performance of the treatment.

Abstract: The invention relates to a coating for temperable substrates, in particular of glass panes. This coating comprises for example directly on the substrate an Si3N4 layer, thereon a CrN layer, thereon a TiO2 layer and lastly an Si3N4 layer.

Abstract: The invention relates to a glass coating and a method for the production of this glass coating. The glass coating comprises a first layer of ZnO and a second layer of Ag disposed thereon. Before the Ag layer is applied onto the ZnO layer, the latter is irradiated with ions.

Abstract: A force microscope for the detection of forces in the sub-micronewton range has a measurement head which is used to carry out a relative movement with respect to a sample holder and to which a carrier molecule is attached on which probe molecules are placed.

Abstract: The invention relates to an infrared radiation reflecting layer system for panes of glass and similar, the properties of said layer system being maintained even after heat treatment, for example, for bending or hardening the panes of glass. Silver is used as the infrared radiation reflecting layer. A combination of NiCrOx and Zn(Al)Ox is used as a lower-layer blocker for the silver. Also, a stoichiometric layer is also used as a pre-blocker layer. A specific work point is selected for a first dielectric layer of TiOxNy. Harmonisation of the thickness of the layers and the degrees of oxidation of NiCrOx and ZnAlOx as double lower-layer blockers and the work point of the TiOxNy-base layer are important for the temperability of the coating.

Abstract: The invention relates to a sputter chamber for coating substrates, in which the so-called “picture frame effect” is eliminated or at least largely reduced. The thickness of the coating at the margin of a substrate hereby no longer deviates significantly from the thickness of the coating in the center of the substrate. This is attained thereby that the negative effect of the process gas—or of several process gases—which is introduced into the sputter chamber is equalized by an additional inert or reactive gas. At the margins of the substrates to be coated and on the substrate side facing away from the cathode thus an additional gas stream is generated, which is directed counter to the process gas stream.

Abstract: The invention relates to a coating for temperable substrates, in particular of glass panes. This coating comprises for example directly on the substrate an Si3N4 layer, thereon a CrN layer, thereon a TiO2 layer and lastly an Si3N4 layer.

Abstract: The invention relates to a target material for the production of a protective layer for a solar control and absorption layer by means of sputtering. This target material is comprised of silicon doped with titanium. The protective layer, which can be produced with the target material, is heatable without significant changes of its properties. It is therefore also suitable for coating lass, which is heated and subsequently bent.

Abstract: The invention relates to a glass coating and a method for the production of this glass coating. The glass coating comprises a first layer of ZnO and a second layer of Ag disposed thereon. Before the Ag layer is applied onto the ZnO layer, the latter is irradiated with ions.

Abstract: A method for coating substrates in inline installations, in which a substrate is moved through at least one coating chamber and during this movement is coated. In this method, first, a model of the coating chamber is formed which takes into consideration the changes of the chamber parameters caused by the movement of the substrate through the coating chamber. Subsequently, the particular position of the substrate within the coating chamber is acquired. The chamber parameters are subsequently set based on the position of the substrate according to the model of the coating chambers.

Abstract: A system and method for coating a substrate is described. One embodiment includes a high-power sputtering system with a power coupler configured to deliver power to a rotatable target. The power coupler is positioned in a vacuum chamber or between the bearings and the rotatable target outside the vacuum chamber to limit the current that flows through the bearing.

Abstract: The invention relates to a sputter arrangement with a magnetron and a target, with the magnetron and the target being movable relative to one another. The magnetron comprises a magnet system, which forms a quasi-rectangular plasma tube, whose two longitudinal sides have a distance C from one another. If target and magnet system are moved relative to one another by a path corresponding approximately to the distance C, the magnet system is laid out such that the width at the end of the plasma tube is smaller or equal to the diameter of the plasma tube. However, if the path of the relative movement is less than C, the magnet system is laid out such that the width d of the ends of the plasma tube is less or equal to twice the diameter of the plasma tube.

Abstract: The invention relates to a coating installation comprising a recipient (1) which is divided into a cathode side (3) and a substrate side (4) by means of a screen (2). The cathode side (3) and the substrate side (4) respectively have a direct extraction outlet (10, 16) and a gas admission (8, 14). The gas admission (8) on the cathode side (3) is connected to a process gas source (9) and the gas admission (14) for the substrate side (4) is connected to a reactive gas source (15).

Abstract: A meteorological electromagnetic measuring system contains a plurality of measuring stations which are physically distributed in a given area. Each measuring station contains at least one spherics receiver to pick up spherics signals and a transmission device to transfer measuring data available in the measuring station and derived from the spherics signals to a central evaluation unit assigned to the measuring stations. The measuring stations are disposed such that an average distance between adjacent measuring stations is less than 50 km for area wide detection of short-range spherics signals.

Abstract: The invention concerns an apparatus for the plasma treatment of substrates in a plasma discharge excited by a high frequency between two electrodes 3, 8 to which power is supplied by a high frequency source, where the first electrode is configured as a hollow electrode 3 and the second one as an electrode 8 holding a substrate 7 and situated upstream of the hollow chamber 10 of the first electrode which it also passes. The hollow electrode is enclosed by a dark space shield and has an edge pointing in direction of the second electrode and also has projection located between the edge. These projections are on the same potential as the second electrode. The radio frequency power is thus decoupled from the substrate bias voltage (selfbias) and the distance between the first and the second electrode can be changed.