Abstract: A coordinate measuring machine (1) for the structured illumination of substrates is disclosed. The incident light illumination means (14) and/or the transmitted light illumination means (6) have a pupil access via which at least one optical element (35, 88) is positionable in the optical illumination path (4, 5). The size and/or the type and/or the polarization of the pupil illumination may be manipulated such that the structured illumination of the substrate in the coordinate measuring machine (1) corresponds to the structured illumination of this substrate in the exposure process with a stepper.

Abstract: Element for homogenizing the illumination with simultaneous setting of the polarization degree, wherein the element consists of at least two components. The first component is a microlens array, and the second component is a filter for setting the desired polarization.

Abstract: A method for improving the reproducibility of a coordinate measuring machine and its accuracy is disclosed. Using at least one measuring field of a camera, a plurality of images of at least one structure on the substrate are recorded. The substrate is placed on a measuring stage traversable in the X coordinate direction and the Y coordinate direction, the position of which is determined during imaging using a displacement measuring system. The measuring field is displaced by the amount of the deviation determined.

Abstract: An apparatus (1) for measuring structures (3) on a mask (2) and for calculating structures in a photoresist on a wafer resulting from the structures (3) on the mask (2) is disclosed, wherein the apparatus (1) comprises at least one incident-light illumination means (14) and/or one transmitted-light illumination means (6), wherein the apparatus (1) comprises at least one imaging optics (9) and a detector (11) of a camera (10) for imaging the structures (3) on the mask (2), wherein a first computer program (17) is associated with the detector (11) of the camera (10) and provided for determining the position and/or the dimension of the structure (3) on the mask (2). A method for measuring structures (3) on a mask (2) and for calculating structures in a photoresist on a wafer to be expected from the structures (3) on the mask (2) is also disclosed.

Abstract: A method is disclosed for eliminating sources of error in the system correction of a coordinate measuring machine. Herein, a number j of reference structures 33 on a rigid reference object 30 are measured in a starting orientation k=0, and the starting coordinates and the reference coordinates of the reference structures 33 on the reference object 30 are determined in a number k>3 of mutually different orientations.

Abstract: What is disclosed is a device (1) for automatic detection of a possible incorrect measurement, wherein the device (1) comprises at least one reflected light illumination apparatus (14) and/or a transmitted light illumination apparatus (6) and at least one imaging optical system (9) and one detector (11) of a camera (10) for imaging structures (3) on a substrate (2), wherein a first program portion (17) is linked to the detector (11) of the camera (10), said detector being provided for determining the position and/or dimension of the structure (3) on the substrate (2), wherein the device (1) determines and records a plurality of measurement variables Mj, j ? {1, . . . , L}, from which at least one variable G can be determined, wherein a second program portion (18) is linked to the detector (11) of the camera (10), said program portion calculating an analysis of the measurement variables Mj with regard to a possible incorrect measurement.

Abstract: Device for measuring the position of a structure on an object 30 with at least one laser interferometer system 29 to determine a positional displacement of the object 30 in at least one spatial direction, whereby the object is placed on a stage which is translatable in the X and Y coordinate direction An illumination device is provided, which illuminates the structures to be measured. The structure is imaged on a detector 34 via a high-resolution microscope optics in incident light and/or transmitted light in the near UV spectral range. The illumination device is an excimer laser, a frequency multiplied solid-state or gas laser, or an excimer lamp.

Abstract: To determine an edge bead removal line (17) on a wafer (10), first lines or edges (38, 40, 42, 44) in the edge area (19) of the wafer (10) are detected. A first line area (48) and a second line area (50) are defined on either side of these lines (38, 40, 42, 44). The structures (36) present in these edge areas (48, 50) are compared to each other. From the result of the comparison it is determined whether or not an edge bead removal line (17) is present.

Abstract: The invention refers to an apparatus and a method for measuring the height profile of a semiconductor substrate. In particular, the present invention refers to a confocal wafer inspection apparatus and a method of recording the height profile of an entire wafer by the use of a dispersive element, in front of which there is a slot-shaped aperture, and a two-dimensional detector.

Abstract: The present invention relates to an apparatus for illuminating and inspecting a specular surface, comprising a light source, a collector optics for collecting the light from the light source, a homogenizing optics for transmitting the light from the collector optics having a first micro-lens array downstream of the collector optics, and a second micro-lens array downstream of the first micro-lens array, a Fourier optics for transmitting the light from the homogenizing optics onto the specular surface, an objective optics, and a detector for receiving an image, wherein the collector optics and the first micro-lens array project the light source onto the second micro-lens array and wherein the second micro-lens array and the Fourier optics project the first micro-lens array onto the specular surface, and wherein the objective optics projects the specular surface onto the detector.

Abstract: An apparatus for inspecting a surface of a wafer includes an illumination device for illuminating an imaging area of the wafer with at least one broad-band spectrum, and an optical imaging device with a detector for polychromatic imaging of the imaging area of the wafer based on the illumination, wherein the imaging device includes a filter arrangement for selecting a plurality of narrow-band spectra. In addition, a method for inspecting the surface of a wafer, includes the steps of leveling a plurality of narrow-band spectra to a common intensity range, illuminating an imaging area of the wafer with at least one broad-band spectrum, and imaging a plurality of narrow-band spectra from the imaging area based on the illumination.

Abstract: The present invention relates to a reference-beam interferometer for determining the position of a traversable stage, wherein an evacuated tube is inserted into the longer of the two interferometer legs. The tube is closed off by windows, which have a negative coefficient of thermal expansion and which can have a coating for reflecting heat radiation. Moreover, thermal compensation plates are inserted into the shorter of the two beam paths.

Abstract: In the production of semiconductor or other components, the structures are normally manufactured in different planes. In the orientation of these planes relative to each other a displacement or alignment is examined, among other things, and detected as an overlay defect. To reduce a systematic measuring defect a measuring device (10) is provided for measuring the overlay defect. This device has an illuminating device (12), a lens or objective (14) for focusing radiation from the illuminating device (12) onto the object (16) and a tube lens (18) for imaging the radiation onto a sensor unit (20). A compensator (22), in which the wave fronts of the incident radiation are tilted with spectral variation such that the axial transverse chromatic aberration is compensated for, is provided in the path of rays of the measuring device (10).

Abstract: The present invention relates to a method of optically imaging a wafer with a photoresist layer, wherein an imaging area on the surface of the wafer is illuminated with light and a fluorescence image is taken in the imaging area based on the fluorescent light irradiated due to the illumination by the excitation light.

Abstract: The present invention relates to a method of inspecting a wafer, wherein the wafer has a first area of periodically arranged SAWs and at least one second area of SAWs displaced with respect to the first area. The method comprises the steps of optically imaging the first area of the wafer by moving an imaging window in the period direction, displacing the imaging window relative to the wafer, optically imaging the second area of the wafer by moving the displaced imaging window in the period direction, and evaluating the image by comparing partial images.

Abstract: A method and an apparatus are disclosed, whereby an improvement of the measuring accuracy in the determination of structural data is facilitated. A first detector unit (15a) is provided for receiving the light reflected or transmitted by structures applied on the microscopic component (2). A second detector (15b) is provided for detecting the illumination intensity emitted by the at least one light source, and a computer (18) for determining the structural data from the light received by the first detector unit (15a) and the second detector (15).

Abstract: The present invention relates to an apparatus and a method for inspecting a wafer, comprising an illumination means for illuminating the surface of a wafer, an imaging means for optically imaging the surface of the wafer with at least one camera having an imaging area, a movement means for a relative movement between the imaging area and the surface of the wafer, and an evaluation means for evaluating the wafer, wherein the imaging means comprises two cameras focused on the same imaging area.

Abstract: To determine an edge bead removal line (17) on a wafer (10), first lines or edges (38, 40, 42, 44) in the edge area (19) of the wafer (10) are detected. A first line area (48) and a second line area (50) are defined on either side of these lines (38, 40, 42, 44). The structures (36) present in these edge areas (48, 50) are compared to each other. From the result of the comparison it is determined whether or not an edge bead removal line (17) is present.

Abstract: The present invention broadly comprises a device for supplying light at an illumination wavelength shorter than 300 nm. The device includes a first subassembly, having a light source for delivering light at a wavelength that is at least twice as long as the illumination wavelength; a second subassembly having at least one means for wavelength reduction; and a light guide that guides the light from the light source of the first subassembly into the second subassembly. The present invention also broadly comprises a method for supplying light at an illumination wavelength shorter than 300 nm.