Abstract: A compact, low-loss and wavelength insensitive Y-junction for submicron silicon waveguides. The design was performed using FDTD and particle swarm optimization (PSO). The device was fabricated in a 248 nm CMOS line. Measured average insertion loss is 0.28±0.02 dB across an 8-inch wafer. The device footprint is less than 1.2 ?m×2 ?m, orders of magnitude smaller than MMI and directional couplers.

Abstract: A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1.24 A/W, corresponding to 99.2% quantum efficiency. Dark current is 40 nA at ?4 V reverse bias. 3-dB bandwidth is 30 GHz.

Abstract: A high data rate, high sensitivity, low power optical link using low-bandwidth components and low-bandwidth E/O drivers and receivers and method of building same. The method is based on the idea of making the optical part of the link look like a bandwidth limited lossy electrical channel, so that the powerful equalization methods used in the wireline electrical links can be applied to recover the transmitted data in a situation with low bandwidth and/or high loss and strong inter-symbol interference. Linear and non-linear optical channel components, E/O drivers and receivers can benefit from the apparatus and the methods of the invention.

Abstract: A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1.24 A/W, corresponding to 99.2% quantum efficiency. Dark current is 40 nA at ?4 V reverse bias. 3-dB bandwidth is 30 GHz.

Abstract: A distributed traveling-wave Mach-Zehnder modulator driver having a plurality of modulation stages that operate cooperatively (in-phase) to provide a signal suitable for use in a 100 Gb/s optical fiber transmitter at power levels that are compatible with conventional semiconductor devices and conventional semiconductor processing is described.

Abstract: An integrated polarization splitter and rotator (PSR) employs the TE0 and TE1 modes of propagating light, rather than the TE0 and TM0 modes used in conventional prior art PSR. The integrated PSR exhibits appreciably flatter wavelength response because it does not require a directional coupler to de-multiplex incoming polarizations. The PSR allows tuning of the TM0 loss to reduce polarization dependent loss (PDL). This integrated polarization splitter and rotator is applicable to all integrated platforms including Silicon-on-Insulator (SOI) and III-V semiconductor compound systems. The PSR may be very compact (12×2 ?m2), and provides low loss (<0.3 dB across the C-band) and ultra-broadband operation. The PSR also affords better control of polarization dependent losses.

Abstract: An optical modulator apparatus may include a plurality of segment drivers, each segment driver having a unique offset voltage and driving but a portion or a segment of an electro-optical modulator. A modulating electrical signal may be applied to the segment drivers via a plurality of electrical delays. Parameters of the segment drivers may be selected so as to approximate a pre-defined transfer function, which may include a linear or a non-linear transfer function.

Abstract: Back scattering in an optical waveguide at an operating wavelength is controlled by adjusting an optical phase of light propagating in the waveguide at one or more locations along the waveguide. A portion of the back scattered light is tapped off near an input port and coupled into a photodetector. A controller detects changes in the photodetector signal and adjusts an optical phase tuner configured to control the optical phase of light in the waveguide at the selected location or locations. The optical phase tuner may be configured to vary the refractive index of at least a portion of the waveguide.

Abstract: A photonic chip includes a device layer and a port layer, with an optical port located at the port layer. Inter-layer optical couplers are provided for coupling light between the device and port layers. The inter-layer couplers may be configured to couple signal light but block pump light or other undesired wavelength from entering the device layer, operating as an input filter. The port layer may accommodate other light pre-processing functions, such as optical power splitting, that are undesirable in the device layer.

Abstract: A multimode interference (MMI) coupler with an MMI region of curved edges, and a method of design and manufacturing by using a computerized optimization algorithm to determine a favorable set of segment widths for the MMI region for a predefined set of coupler design parameters.

Abstract: Described are various embodiments of a dual optical modulator, system and method. In one embodiment, an optical modulator modulates an input optical signal having a designated optical frequency. The modulator comprises first and second tunable modulators operable around the optical frequency and operatively disposed between a bus waveguide path and an opposed waveguide path. The modulator further comprises a relative optical phase-shifter optically coupled between the tunable modulators so to impart a relative optical phase shift between the bus waveguide path and the opposed waveguide path. The tunable modulators are respectively driveable to modulate a respective resonance thereof in complimentary directions relative to the optical frequency and thereby resonantly redirect a selectable portion of the input optical signal along the opposed waveguide path such that the relative optical phase shift is imparted thereto for output.

Abstract: A low loss high extinction ratio on-chip polarizer. The polarizer includes an input waveguide taper having an outer waveguiding region that widens in the direction of light propagation along at least a portion of the taper length, and a core waveguiding region that narrows in the direction of light propagation along at least a portion of the taper length, so as to selectively squeeze out light of undesired modes into the outer regions while preserving light of a desired mode in the waveguide core. An output filter section is provided to prevent light from reentering the output waveguide after being squeezed out. An integrated light absorber/deflector may be coupled to the outer waveguiding regions.

Abstract: A test system for determining a surface characteristic of a chip facet comprises a chip, which has a facet and includes a waveguide, a detector, and a processor. The on-chip waveguide is configured to direct test light towards the facet, where a portion of the test light is reflected and a portion of the test light is transmitted. The detector is configured to measure an amount of the reflected portion or the transmitted portion, and the processor is configured to determine a surface characteristic of the facet, such as a facet angle, a facet curvature, and/or a facet roughness, on the basis of the measured amount.

Abstract: An optical waveguide modulator with automatic bias control is disclosed. A portion of the modulator light is mixed with reference light and converted to one or more electrical feedback signals. An electrical feedback circuit controls the modulator bias responsive to the feedback signals.

Abstract: An integrated polarization splitter and rotator (PSR) employs the TE0 and TE1 modes of propagating light, rather than the TE0 and TM0 modes used in conventional prior art PSR. The integrated PSR exhibits appreciably flatter wavelength response because it does not require a directional coupler to de-multiplex incoming polarizations. The PSR allows tuning of the TM0 loss to reduce polarization dependent loss (PDL). This integrated polarization splitter and rotator is applicable to all integrated platforms including Silicon-on-Insulator (SOI) and III-V semiconductor compound systems. The PSR may be very compact (12×2 ?m2), and provides low loss (<0.3 dB across the C-band) and ultra-broadband operation. The PSR also affords better control of polarization dependent losses.

Abstract: An optical modulator apparatus may include a plurality of segment drivers, each segment driver having a unique offset voltage and driving but a portion or a segment of an electro-optical modulator. A modulating electrical signal may be applied to the segment drivers via a plurality of electrical delays. Parameters of the segment drivers may be selected so as to approximate a pre-defined transfer function, which may include a linear or a non-linear transfer function.

Abstract: A light shield may be formed in photonic integrated circuit between integrated optical devices of the photonic integrated circuit. The light shield may be built by using materials already present in the photonic integrated circuit, for example the light shield may include metal walls and doped semiconductor regions. Light-emitting or light-sensitive integrated optical devices or modules of a photonic integrated circuit may be constructed with light shields integrally built in.

Abstract: A multimode interference (MMI) coupler with an MMI region of curved edges, and a method of design and manufacturing by using a computerized optimization algorithm to determine a favorable set of segment widths for the MMI region for a predefined set of coupler design parameters.

Abstract: Described are various embodiments of a dual optical modulator, system and method. In one embodiment, an optical modulator modulates an input optical signal having a designated optical frequency. The modulator comprises first and second tunable modulators operable around the optical frequency and operatively disposed between a bus waveguide path and an opposed waveguide path. The modulator further comprises a relative optical phase-shifter optically coupled between the tunable modulators so to impart a relative optical phase shift between the bus waveguide path and the opposed waveguide path. The tunable modulators are respectively driveable to modulate a respective resonance thereof in complimentary directions relative to the optical frequency and thereby resonantly redirect a selectable portion of the input optical signal along the opposed waveguide path such that the relative optical phase shift is imparted thereto for output.

Abstract: A test system for determining a surface characteristic of a chip facet includes an on-chip waveguide, a detector, and a processor. The on-chip waveguide is configured to direct test light towards the facet, where a portion of the test light is reflected and a portion of the test light is transmitted. The detector is configured to measure an amount of the reflected portion or the transmitted portion, and the processor is configured to determine a surface characteristic of the facet, such as a facet angle, a facet curvature, and/or a facet roughness, on the basis of the measured amount.