Abstract: Methods and apparatus provide for delivering a controlled supply of gas to at least one aero-mechanical device to impart a gas flow to suspend a material sheet; preventing lateral movement of the material sheet in at least one direction when suspended; and imparting a stream of water, from a side of the material sheet opposite the at least one aero-mechanical device, to cut the material sheet when suspended.

Abstract: Methods and apparatus for forming a semi-spherical polishing pad for polishing semiconductor surfaces, provide for: placing a polishing pad pre-form on a dome-shaped forming surface, the polishing pad pre-form including a circular body having a center and an outer peripheral edge, and a plurality of slots extending from the outer peripheral edge towards the center; disposing a bladder opposite to the dome-shaped forming surface and the polishing pad pre-form; inflating the bladder with a fluid such that the dome-shaped forming surface of the bonnet form presses against the polishing pad pre-form from one side and the bladder presses against the polishing pad pre-form from an opposite side; and maintaining the pressing step for a predetermined period of time to achieve the semi-spherical polishing pad.

Abstract: Methods and apparatus for reducing damage of a semiconductor donor wafer include the steps of: (a) rotating a polishing pad, rotating the semiconductor donor wafer, applying a polishing slurry to the polishing pad, and pressing the semiconductor donor wafer and the polishing pad together; and (b) rotating the polishing pad and the semiconductor donor wafer, discontinuing the application of the polishing slurry, applying a rinsing fluid to the polishing pad, and pressing the semiconductor donor wafer and the polishing pad together, wherein step (a) followed by step (b) is carried out in sequence at least two times, and at least one of the following are reduced in at least two successive intervals of step (a): (i) a pressure at which the semiconductor donor wafer and the polishing pad are pressed together, (ii) a mean particle size of an abrasive within the polishing slurry, and (iii) a concentration of the slurry in water and stabilizers.

Abstract: A process for electroblowing a multiple layered sheet using multiple spinning beams to produce different component webs wherein the sheet doesn't stick to the forming screen and has improved web stability.

Abstract: A glass laminate comprises an external glass sheet, an internal glass sheet, and a polymer interlayer formed between the external glass sheet and the internal glass sheet. The external glass sheet is a chemically-strengthened glass sheet having a thickness of less than 1 mm, the polymer interlayer has a thickness of less than 1.6 mm, and the internal glass sheet is a non-chemically-strengthened glass sheet having a thickness of less than 2.5 mm.

Abstract: Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y- axial directions.

Abstract: A glass laminate includes at least one chemically-strengthened glass sheet and a polymer interlayer formed over a surface of the sheet. The chemically-strengthened glass sheet has a thickness of less than 2.0 mm, and a near-surface region under a compressive stress. The near surface region extends from a surface of the glass sheet to a depth of layer (in micrometers) of at least 65-0.06(CS), where CS is the compressive stress at the surface of the chemically-strengthened glass sheet and CS>300 MPa.

Abstract: Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y- axial directions.

Abstract: Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y-axial directions.

Abstract: Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y-axial directions.

Abstract: Methods and apparatus for forming a semi-spherical polishing pad for polishing semiconductor surfaces, provide for: placing a polishing pad pre-form on a dome-shaped forming surface, the polishing pad pre-form including a circular body having a center and an outer peripheral edge, and a plurality of slots extending from the outer peripheral edge towards the center; disposing a bladder opposite to the dome-shaped forming surface and the polishing pad pre-form; inflating the bladder with a fluid such that the dome-shaped forming surface of the bonnet form presses against the polishing pad pre-form from one side and the bladder presses against the polishing pad pre-form from an opposite side; and maintaining the pressing step for a predetermined period of time to achieve the semi-spherical polishing pad.

Abstract: Methods and apparatus for processing edge portions of a donor semiconductor wafer include controlling chemical mechanical polishing parameters to achieve chamfering of the edges of the donor semiconductor wafer; and alternatively or additionally flexing the donor semiconductor wafer to present a concave configuration, where edge portions thereof are pronounced as compared to a central surface area thereof, such that the pronounced edge portions of the donor semiconductor wafer are preferentially polished against a polishing surface in order to achieve the chamfering.

Abstract: Methods and apparatus for reducing damage of a semiconductor donor wafer include the steps of: (a) rotating a polishing pad, rotating the semiconductor donor wafer, applying a polishing slurry to the polishing pad, and pressing the semiconductor donor wafer and the polishing pad together; and (b) rotating the polishing pad and the semiconductor donor wafer, discontinuing the application of the polishing slurry, applying a rinsing fluid to the polishing pad, and, pressing the semiconductor donor wafer and the polishing pad together, wherein step (a) followed by step (b) is carried out in sequence at least two times, and at least one of the following are reduced in at least two successive intervals of step (a): (i) a pressure at which the semiconductor donor wafer and the polishing pad are pressed together, (ii) a mean particle size of an abrasive within the polishing slurry, and (iii) a concentration of the slurry in water and stabilizers.

Abstract: Methods and apparatus for forming a semi-spherical polishing pad for polishing semiconductor surfaces, provide for: placing a polishing pad pre-form on a dome-shaped forming surface, the polishing pad pre-form including a circular body having a center and an outer peripheral edge, and a plurality of slots extending from the outer peripheral edge towards the center; disposing a bladder opposite to the dome-shaped forming surface and the polishing pad pre-form; inflating the bladder with a fluid such that the dome-shaped forming surface of the bonnet form presses against the polishing pad pre-form from one side and the bladder presses against the polishing pad pre-form from an opposite side; and maintaining the pressing step for a predetermined period of time to achieve the semi-spherical polishing pad.

Abstract: Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X-and Y-axial directions.

Abstract: Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to a wet etching process.

Abstract: Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y-axial directions.

Abstract: Methods and apparatus provide for delivering a controlled supply of gas to at least one aero-mechanical device to impart a gas flow to suspend a material sheet; preventing lateral movement of the material sheet in at least one direction when suspended; and imparting a stream of water, from a side of the material sheet opposite the at least one aero-mechanical device, to dice the material sheet when suspended.

Abstract: Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y-axial directions.

Abstract: Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y-axial directions.