Abstract: A method of operating a microlithographic apparatus comprises the steps of providing an illumination system comprising an array of tiltable mirrors, wherein a light irradiance distribution on the array varies by at least 50% along a first line; specifying a scan integrated target angular light distribution and a target light energy for a point moving through an illumination field along a second line that extends parallel to a scan direction and is an image of the first line; determining a group of those mirrors through which the first line extends; determining tilt angles of the mirrors of the group such that a real angular light distribution and a real light energy for the point approximate the respective target values; producing the illumination field by forming an image of the array on a mask; and imaging a portion of the mask on a surface while the mask moves along the scan direction.

Abstract: An EUV projection lithography illumination optical unit guides illumination light toward an object field, the illumination optical unit comprising. The unit includes: a first facet mirror comprising a plurality of first monolithic facets; and a second facet mirror downstream of the first facet mirror in a beam path of the illumination light, the second facet mirror comprising a plurality of second facets, each second facet being configured to contribute to imaging a corresponding first monolithic facet of the first facet mirror into the object field via an illumination channel. Individual parts of the first monolithic facets are configured so that illumination light is guided from the individual parts of the first monolithic facets toward different target locations on the corresponding second facet of the second facet mirror.

Abstract: For controlling an intensity distribution of an illumination radiation impinging on an object field, an illumination apparatus for a projection exposure apparatus for microlithography includes a mechanism for spatially displacing an illumination beam relative to a first facet mirror of an illumination optical unit.

Abstract: An illumination system of a micro-lithographic projection exposure apparatus is provided, which is configured to illuminate a mask positioned in a mask plane. The system includes a pupil shaping optical subsystem and illuminator optics that illuminate a beam deflecting component. For determining a property of the beam deflecting component, an intensity distribution in a system pupil surface of the illumination system is determined. Then the property of the beam deflecting component is determined such that the intensity distribution produced by the pupil shaping subsystem in the system pupil surface approximates the intensity distribution determined before. At least one of the following aberrations are taken into account in this determination: (i) an aberration produced by the illuminator optics; (ii) an aberration produced by the pupil shaping optical subsystem; (iii) an aberration produced by an optical element arranged between the system pupil surface and the mask plane.

Abstract: A method of lithographically transferring a pattern on a light sensitive surface in a multiple exposure process comprises the following steps: a) providing a mask comprising a first mask pattern area and a second mask pattern area; b) directing projection light on the mask, thereby producing on the light sensitive surface a first exposed pattern area, which is an image of the first mask pattern area, and a second exposed pattern area, which is an image of the second mask pattern area. The projection light illuminating the first and second mask pattern area has different angular light distributions. c) repeating step b) using the same mask so that an image of the first mask pattern area is superimposed on the second exposure pattern area.

Abstract: A spectacle lens for a display device can be fitted on the head of a user and generate an image. The spectacle lens includes a curved front and/or side, wherein a light guiding channel which is suitable for guiding light bundles of pixels of the generated image, which are coupled into the spectacle lens via the coupling-in section of the spectacle lens, in the spectacle lens to the coupling-out section to couple them out of the spectacle lens via the coupling-out section. The coupling-out section includes at least two deflecting surfaces arranged next to each other which reflect the light bundles in the direction of the rear side for the coupling out. Deflecting surfaces can be formed as a switchable layer which can be switched into a first and a second state, wherein the reflectivity of the switchable layers in the first state is higher than in the second state.

Abstract: An illumination system of a microlithographic projection exposure apparatus includes a light source to produce projection light beam, and a first and a second diffractive optical element between the light source and a pupil plane of the illumination system. The diffractive effect produced by each diffractive optical element depends on the position of a light field that is irradiated by the projection light on the diffractive optical elements. A displacement mechanism changes the mutual spatial arrangement of the diffractive optical elements. In at least one of the mutual spatial arrangements, which can be obtained with the help of the displacement mechanism, the light field extends both over the first and the second diffractive optical element. This makes it possible to produce in a simple manner continuously variable illumination settings.

Abstract: An EUV lithography system has an EUV beam path and a monitor beam path. The EUV beam path includes a mirror system having plurality of mirror elements, the orientations of which can be changed. The monitor beam path includes a monitor radiation source, a screen and a spatially resolving detector. The mirror system is arranged in the monitor beam path between the monitor radiation source and the screen.

Abstract: An EUV light source for an illumination device of a microlithographic proj ection exposure apparatus, includes an electron source for generating an electron beam, an accelerator unit for accelerating the electron beam, and an undulator arrangement for generating EUV light by deflecting the electron beam. The undulator arrangement includes a first undulator for generating EUV light having a first polarization state and at least one second undulator for generating EUV light having a second polarization state different than the first polarization state. The second undulator is downstream of the first undulator along the direction of propagation of the electron beam. The undulator arrangement is configured so that it has a first operating mode, in which the first undulator is in saturation with regard to the generation of EUV light, and at least one second operating mode, in which the first undulator is not in saturation with regard to the generation of EUV light.

Abstract: An optical system for a microlithographic projection exposure apparatus has an optical axis, at least one mirror arrangement having a plurality of mirror elements that are adjustable independently of one another for altering an angular distribution of the light reflected by the mirror arrangement, and a deflection device which includes, relative to the optical beam path downstream of the mirror arrangement, at least one deflection surface at which a deflection of the optical axis occurs. The at least one deflection surface has refractive power.

Abstract: An optical component for a projection exposure apparatus includes a multiplicity of variably positionable beam-guiding elements which serve as pupil facets. The optical component can be arranged in the beam path of the projection optical unit.

Abstract: A beam distribution optical unit serves for splitting an incident beam of illumination light into at least two emergent illumination-light beams. The beam distribution optical unit has at least one blazed reflection grating having reflective grating structures. The result is an optical unit in which a plurality of illumination-light beams are efficiently produced from one incident beam of illumination light.

Abstract: An illumination system of a microlithographic projection exposure apparatus includes a light source to produce projection light beam, and a first and a second diffractive optical element between the light source and a pupil plane of the illumination system. The diffractive effect produced by each diffractive optical element depends on the position of a light field that is irradiated by the projection light on the diffractive optical elements. A displacement mechanism changes the mutual spatial arrangement of the diffractive optical elements. In at least one of the mutual spatial arrangements, which can be obtained with the help of the displacement mechanism, the light field extends both over the first and the second diffractive optical element. This makes it possible to produce in a simple manner continuously variable illumination settings.

Abstract: Microlithographic illumination system includes individually drivable elements to variably illuminate a pupil surface of the system. Each element deviates an incident light beam based on a control signal applied to the element. The system also includes an instrument to provide a measurement signal, and a model-based state estimator configured to compute, for each element, an estimated state vector based on the measurement signal. The estimated state vector represents: a deviation of a light beam caused by the element; and a time derivative of the deviation. The illumination system further includes a regulator configured to receive, for each element: a) the estimated state vector; and b) target values for: i) the deviation of the light beam caused by the deviating element; and ii) the time derivative of the deviation.

Abstract: An illumination system for EUV projection lithography has a beam shaping optical unit for generating an EUV collective output beam from an EUV raw beam of a synchrotron-radiation-based light source. An output coupling optical unit serves for generating a plurality of EUV individual output beams from the EUV collective output beam. In each case a beam guiding optical unit serves for guiding the respective EUV individual output beam toward an object field in which a lithography mask is arrangable. The result is an illumination system with which EUV light of a synchrotron-radiation-based light source is guided to the greatest possible extent without losses and at the same time flexibly.

Abstract: A mask for microlithography comprises a substrate; a first pattern area on the substrate, the first pattern area comprising a first pattern extending over a first length in a mask scanning direction and a first width in a direction perpendicular to the mask scan direction; and a second pattern area on the substrate adjacent to the first pattern area in the mask scanning direction, the second pattern area comprising a second pattern extending over a second length in the mask scanning direction and a second width identical to the first width in the direction perpendicular to the mask scan direction.

Abstract: An illumination optical unit for EUV projection lithography serves for illuminating an illumination field in which an object field of a downstream imaging optical unit is arranged. An object displaceable in an object displacement direction is in turn arrangeable in the object field. A facet mirror of the illumination optical unit has a plurality of facets arranged alongside one another and serving for the reflective, superimposing guidance of partial beams of a beam of EUV illumination light to the object field. The facet mirror is arranged such that a position of the respective facet on the facet mirror and an impingement region of an illumination light partial beam on the respective facet of the facet mirror predefine an illumination direction for the field points of the object field.

Abstract: An illumination system of a micro-lithographic projection exposure apparatus is provided, which is configured to illuminate a mask positioned in a mask plane. The system includes a pupil shaping optical subsystem and illuminator optics that illuminate a beam deflecting component. For determining a property of the beam deflecting component, an intensity distribution in a system pupil surface of the illumination system is determined. Then the property of the beam deflecting component is determined such that the intensity distribution produced by the pupil shaping subsystem in the system pupil surface approximates the intensity distribution determined before. At least one of the following aberrations are taken into account in this determination: (i) an aberration produced by the illuminator optics; (ii) an aberration produced by the pupil shaping optical subsystem; (iii) an aberration produced by an optical element arranged between the system pupil surface and the mask plane.

Abstract: An illumination optical unit for EUV projection lithography illuminates an illumination field with illumination light from a light source. A first facet mirror of the illumination optical unit has a plurality of first facets for the reflective guidance of partial beams of a beam of the EUV illumination light. Disposed downstream of the first facet mirror is a second facet mirror with a plurality of second facets for further reflective guidance of the partial beams. As a result of this, the reflective beam guidance that the two facets predetermines object field illumination channels, by which the whole object field is illuminable by the illumination light in each case and to which exactly one first facet and exactly one second facet is assigned in each case.

Abstract: A facet mirror, such as for use as an optical component in a projection exposure apparatus for EUV microlithography, includes at least two mirror modules having individual mirrors and mirror module surfaces and at least on one side a non-reflective edge region and a module edge. Adjacent individual mirrors in the mirror modules are a distance from each other that is less than half the width of the non-reflective edge region. The at least two adjacent module edges of adjacent mirror modules are offset with respect to each other by a height h along the surface normal of one of the two mirror module surfaces.