Abstract: Embodiments of the present invention provide an end effector capable of generating an electrostatic chucking force to chuck a substrate disposed therein without damaging the substrate. In one embodiment, an end effector for a robot, the end effector includes a body having an electrostatic chucking force generating assembly, and a mounting end coupled to the body, the mounting end for coupling the body to the robot.

Abstract: Embodiments of the present invention provide a substrate support assembly including an electrostatic chuck with enhanced heat resistance. In one embodiment, an electrostatic chuck includes a support base, an electrode assembly having interleaved electrode fingers formed therein, and an encapsulating member disposed on the electrode assembly, wherein the encapsulating member is fabricated from one of a ceramic material or glass.

Abstract: Embodiments described herein generally relate to a plasma processing chamber and a detection apparatus for arcing events. In one embodiment, an arcing detection apparatus is disclosed herein. The arcing detection apparatus comprises a probe, a detection circuit, and a data log system. The probe positioned partially exposed to an interior volume of a plasma processing chamber. The detection circuit is configured to receive an analog signal from the probe and output an output signal scaling events present in the analog signal. The data log system is communicatively coupled to receive the output signal from the detection circuit. The data log system is configured to track arcing events occurring in the interior volume.

Abstract: A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH4, H2O, H2, NF3, SF6, F2, HCl, HF, Cl2, and HBr. Representative condensing abating reagents include, for example, H2, H2O, O2, N2, O3, CO, CO2, NH3, N2O, CH4, and combinations thereof.

Abstract: Embodiments disclosed herein include a method for abating compounds produced in semiconductor processes. The method includes energizing an abating agent, forming a composition by reacting the energized abating agent with gases exiting a vacuum processing chamber, and flowing the composition through a plurality of holes formed in a cooling plate. By cooling the composition with the cooling plate, damages on the downstream pump are avoided.

Abstract: Embodiments provided herein generally relate to an electrostatic chuck (ESC). The ESC may comprise a reduced number of stress initiation points, such as holes through the ESC, which may improve the mechanical integrity of the ESC. Electrodes disposed within the ESC may be connected to electrical contacts and a power source via conductive leads, which may be coupled or formed along a peripheral edge of the ESC. Thus, the need for holes formed in the ESC may be reduced or eliminated. In addition, gas channels may be formed on a top surface, a bottom surface, or both. The gas channels may reduce or eliminate the need for a gas channel formed through the ESC and may facilitate heat transfer between a substrate support, the ESC, and a substrate coupled to the ESC.

Abstract: Embodiments described herein generally relate to an electrostatic chuck (ESC). The ESC may contain a first plurality of electrodes adapted to electrostatically couple a substrate to the ESC and a second plurality of electrodes adapted to electrostatically couple the ESC to a substrate support. Instead of being integrally disposed within the substrate support, the ESC may be easily removed from the substrate support and removed from a chamber for maintenance or replacement purposes.

Abstract: One or more embodiments of the invention are directed to deposition apparatuses comprising a grounded top wall, a processing chamber and a plasma source assembly having a conductive hollow cylinder and substantially continuous grounded shield substantially conforming to the shape of the hollow cylinder.

Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate.

Abstract: Embodiments of the present disclosure provide an electrostatic chuck (ESC) having azimuthal temperature control. In one embodiment, the electrostatic chuck includes an insulating base, a dielectric layer disposed on the insulating base, the dielectric layer having a substrate supporting surface, a plurality of heating elements coupled to the insulating base, and a first set of electrodes and a second set of electrodes, wherein the plurality of heating elements are surrounded by the first set of electrodes and the second set of electrodes.

Abstract: Embodiments disclosed herein include a plasma source, an abatement system and a vacuum processing system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source includes a dielectric tube and a coil antenna surrounding the tube. The coil antenna includes a plurality of turns, and at least one turn is shorted. Selectively shorting one or more turns of the coil antenna helps reduce the inductance of the coil antenna, allowing higher power to be supplied to the coil antenna that covers more processing volume. Higher power supplied to the coil antenna and larger processing volume lead to an improved DRE.

Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

Abstract: Embodiments disclosed herein include a plasma source for abating compounds produced in semiconductor processes. The plasma source has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the cylindrical electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

Abstract: Embodiments provided herein generally relate to an electrostatic chuck (ESC). The ESC may comprise a reduced number of stress initiation points, such as holes through the ESC, which may improve the mechanical integrity of the ESC. Electrodes disposed within the ESC may be connected to electrical contacts and a power source via conductive leads, which may be coupled or formed along a peripheral edge of the ESC. Thus, the need for holes formed in the ESC may be reduced or eliminated. In addition, gas channels may be formed on a top surface, a bottom surface, or both. The gas channels may reduce or eliminate the need for a gas channel formed through the ESC and may facilitate heat transfer between a substrate support, the ESC, and a substrate coupled to the ESC.

Abstract: Embodiments disclosed herein generally relate to plasma abatement processes and apparatuses. A plasma abatement process takes effluent from a foreline of a processing chamber, such as an implant chamber, and reacts the effluent with a reagent. The effluent contains a pyrophoric byproduct. A plasma generator placed within the foreline path may ionize the effluent and the reagent to facilitate a reaction between the effluent and the reagent. The ionized species react to form compounds which remain in a gaseous phase at conditions within the exhaust stream path. In another embodiment, the ionized species may react to form compounds which condense out of the gaseous phase. The condensed particulate matter is then removed from the effluent by a trap. The apparatuses may include an implant chamber, a plasma generator, one or more pumps, and a scrubber.

Abstract: Embodiments described herein relate to an apparatus and method for securing and transferring substrates. A substrate carrier, having one or more electrostatic chucking electrodes disposed therein, electrostatically couples a substrate to the carrier. Optionally, a mask may also be electrostatically coupled to the carrier and may be disposed over a region of the carrier not occupied by the substrate. In one embodiment, multiple electrode assemblies are provided such that a first electrode assembly chucks the substrate to the carrier and a second electrode assembly chucks the mask to the carrier. In another embodiment, a pocket is formed in the carrier and an electrode assembly provides chucking capability within the pocket.

Abstract: Embodiments described herein provide an electrostatic carrier for transferring a substrate. The electrostatic carrier may have a transparent body. The transparent body may have a first surface sized to transport the substrate into and out of a processing chamber. The electrostatic carrier may also have one or more electrostatic chucking electrodes coupled to the transparent body. The one or more electrostatic chucking electrodes may include a transparent conductive oxide material. In certain embodiments the transparent conductive oxide material is an indium-tin oxide material.

Abstract: Embodiments described herein generally relate to an electrostatic chuck (ESC). The ESC may contain a first plurality of electrodes adapted to electrostatically couple a substrate to the ESC and a second plurality of electrodes adapted to electrostatically couple the ESC to a substrate support. Instead of being integrally disposed within the substrate support, the ESC may be easily removed from the substrate support and removed from a chamber for maintenance or replacement purposes.

Abstract: Embodiments of the present disclosure provide an electrostatic chuck (ESC) having azimuthal temperature control. In one embodiment, the electrostatic chuck includes an insulating base, a dielectric layer disposed on the insulating base, the dielectric layer having a substrate supporting surface, an electrode assembly disposed between the insulating base and the substrate supporting surface, and a plurality of heating elements coupled to the insulating base, the heating elements azimuthally control a temperature profile across a substrate surface.

Abstract: Embodiments described herein relate to an apparatus and method for securing and transferring substrates. A substrate carrier, having one or more electrostatic chucking electrodes disposed therein, electrostatically couples a substrate to the carrier such. Optionally, a mask may also be electrostatically coupled to the carrier and may be disposed over a region of the carrier not occupied by the substrate. In one embodiment, multiple electrode assemblies are provided such that a first electrode assembly chucks the substrate to the carrier and a second electrode assembly chucks the mask to the carrier. In another embodiment, a pocket is formed in the carrier and an electrode assembly provides chucking capability within the pocket.